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公开(公告)号：US07247357B2
公开(公告)日：2007-07-24
申请号：US10772447
申请日：2004-02-06
申请人： Takeo Shiba , Motoyasu Terao , Hideyuki Matsuoka
发明人： Takeo Shiba , Motoyasu Terao , Hideyuki Matsuoka
IPC分类号： H01L27/108
CPC分类号： G09G3/3648 , G09G3/20 , G09G3/2011 , G09G3/2074 , G09G3/3225 , G09G2300/08 , G09G2300/0847 , G09G2300/0857 , G09G2300/088 , G09G2310/027 , G09G2310/04 , G09G2360/128 , H01L27/14643 , H01L27/2436 , H01L27/2463 , H01L27/3244 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1625 , H01L45/1675 , Y10T428/10 , Y10T428/1064 , Y10T428/1352
摘要： The image display device has a display section formed of plural pixels and a control section which controls the display section, and is provided with nonvolatile phase-change type pixel memories in respective ones of the pixels, or is provided with a nonvolatile phase-change type frame memory in the control section. Each of the nonvolatile phase-change type pixel memories is formed of one or more switches and a variable-resistance memory element fabricated from a chalcogenide material for storing display data for at least a specified period of time. The nonvolatile phase-change type frame memory is formed of one or more switches and a variable-resistance memory element fabricated from a chalcogenide material for retaining display data for one frame.
摘要翻译： 图像显示装置具有由多个像素形成的显示部和控制显示部的控制部，在各像素中设置有非易失性相变型像素存储器，或者设置有非易失性相变型 框内存在控制部分。 每个非易失性相变型像素存储器由一个或多个开关和由用于存储至少指定时间段的显示数据的硫族化物材料制成的可变电阻存储元件形成。 非易失性相变型帧存储器由一个或多个开关和由硫族化物材料制成的可变电阻存储元件形成，用于保持一帧的显示数据。
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公开(公告)号：US20090250680A1
公开(公告)日：2009-10-08
申请号：US12487492
申请日：2009-06-18
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。
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公开(公告)号：US07335907B2
公开(公告)日：2008-02-26
申请号：US10790881
申请日：2004-03-03
IPC分类号： H01L47/00
CPC分类号： G11C11/5678 , G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L27/2454 , H01L27/2463 , H01L45/06 , H01L45/1213 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device is provided which is constituted by memory cells using memory elements and select transistors and having high heat resistance to be capable of an operation at 140 degrees or higher. As a device configuration, a recording layer of which, of Zn—Ge—Te, content of Zn, Cd or the like is 20 atom percent or more, content of at least one element selected from the group consisting of Ge and Sb is less than 40 atom percent, and content of Te is 40 atom percent or more is used. It is thereby possible to implement the memory device usable for an application which may be performed at a high temperature such as an in-vehicle use.
摘要翻译： 提供一种相变存储器件，其由使用存储元件和选择晶体管的存储器单元构成，并且具有高耐热性能够在140度以上的操作。 作为器件结构，其中Zn-Ge-Te，Zn，Cd等的含量为20原子％以上的记录层选自Ge和Sb中的至少一种元素的含量较少 40原子％以上，Te含量为40原子％以上。 由此，可以实现可以在诸如车载用途的高温下执行的应用的存储装置。
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公开(公告)号：US06946704B2
公开(公告)日：2005-09-20
申请号：US10808510
申请日：2004-03-25
CPC分类号： H01L27/2454 , G11C13/0004 , G11C2213/79 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing phase changes. A memory cell with a smaller surface area than the DRAM device of the related art is achieved by the present invention. Besides low power consumption during read operation, the invention also provides phase change memory having low power consumption even during write operation. Phase change memory also has stable read-out operation.
摘要翻译： 半导体存储单元及其形成方法利用垂直选择晶体管来消除利用相位变化的现有技术的存储单元中的大的单元表面积的问题。 通过本发明实现了具有比现有技术的DRAM器件更小的表面积的存储单元。 除了读取操作中的低功耗之外，本发明还提供即使在写入操作期间具有低功耗的相变存储器。 相变存储器也具有稳定的读出操作。
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公开(公告)号：US08129707B2
公开(公告)日：2012-03-06
申请号：US12487492
申请日：2009-06-18
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。
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公开(公告)号：US07834337B2
公开(公告)日：2010-11-16
申请号：US10587079
申请日：2004-12-20
IPC分类号： H01L29/02
CPC分类号： G11C13/0004 , G11C13/04 , G11C13/047 , G11C2213/56 , G11C2213/71 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase-change memory device including a memory cell having a memory element and a select transistor is improved in heat resistance so that it may be operable at 145° C. or higher.The memory layer is used which has a content of Zn or Cd of 20 at % or more and 50 at % or less, a content of Ge or Sb of 5 at % or more and 25 at % or less, and a content of Te of 40 at % or more and 65 at % or less in Zn-Ge-Te.
摘要翻译： 包括具有存储元件和选择晶体管的存储单元的相变存储器件的耐热性得到改善，使得其在145℃以上可操作。 使用具有20原子％以上且50原子％以下的Zn或Cd含量的记忆层，Ge或Sb的含量为5原子％以上且25原子％以下，Te含量 在Zn-Ge-Te中为40at％以上且65at％以下。
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公开(公告)号：US07470923B2
公开(公告)日：2008-12-30
申请号：US11370945
申请日：2006-03-09
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
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公开(公告)号：US20080121860A1
公开(公告)日：2008-05-29
申请号：US12007851
申请日：2008-01-16
CPC分类号： H01L27/2454 , G11C13/0004 , G11C2213/79 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing phase changes. A memory cell with a smaller surface area than the DRAM device of the related art is achieved by the present invention. Besides low power consumption during read operation, the invention also provides phase change memory having low power consumption even during write operation. Phase change memory also has stable read-out operation.
摘要翻译： 半导体存储单元及其形成方法利用垂直选择晶体管来消除利用相位变化的现有技术的存储单元中的大的单元表面积的问题。 通过本发明实现了具有比现有技术的DRAM器件更小的表面积的存储单元。 除了读取操作中的低功耗之外，本发明还提供即使在写入操作期间具有低功耗的相变存储器。 相变存储器也具有稳定的读出操作。
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公开(公告)号：US20080089154A1
公开(公告)日：2008-04-17
申请号：US11952540
申请日：2007-12-07
IPC分类号： G11C7/00
CPC分类号： G11C11/5678 , G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L27/2454 , H01L27/2463 , H01L45/06 , H01L45/1213 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A memory device is provided which includes a substrate, lower electrodes, selecting elements, memory elements formed of chalcogenide material and upper electrodes. The selecting elements and the memory elements are arranged to be disposed between the upper electrodes and the lower electrodes. In addition, the lower electrodes, the memory elements and the upper electrodes are disposed along lines perpendicular to the substrate surface when the memory device is viewed in a first direction.
摘要翻译： 提供了一种存储器件，其包括衬底，下电极，选择元件，由硫族化物材料形成的存储元件和上电极。 选择元件和存储元件布置成设置在上电极和下电极之间。 此外，当沿第一方向观察存储器件时，下电极，存储元件和上电极沿垂直于衬底表面的线设置。
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公开(公告)号：US07324372B2
公开(公告)日：2008-01-29
申请号：US11507576
申请日：2006-08-22
IPC分类号： G11C7/00
CPC分类号： H01L27/101 , G11C7/12 , G11C8/10 , G11C11/16 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1693 , G11C13/0004 , G11C13/0026 , G11C13/004 , G11C13/0069 , G11C2013/0042 , G11C2013/0054 , G11C2013/0078 , G11C2213/79 , H01L27/2436 , H01L27/2454 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144
摘要： The object of the invention is to avoid an unselected data line being driven in a memory array composed of memory cells each of which uses a storage element depending upon variable resistance and a selection transistor when the selection transistors in all memory cells on a selected word line conduct. To achieve the object, a source line parallel to a data line is provided, a precharge circuit for equipotentially driving both and a circuit for selectively driving the source line are arranged. Owing to this configuration, a current path is created in only a cell selected by a row decoder and a column decoder and a read-out signal can be generated. Therefore, a lower-power, lower-noise and more highly integrated nonvolatile memory such as a phase change memory can be realized, compared with a conventional type.
摘要翻译： 本发明的目的是避免在由存储器单元组成的存储器阵列中驱动未选择的数据线，每个存储器单元在选择的字线上的所有存储单元中的选择晶体管时根据可变电阻使用存储元件和选择晶体管 进行。 为了实现该目的，提供了与数据线并行的源极线，布置用于等电位驱动两者的预充电电路和用于选择性地驱动源极线的电路。 由于该配置，仅在由行解码器选择的单元中创建电流路径，并且可以生成列解码器，并且可以生成读出信号。 因此，与常规型相比，可以实现诸如相变存储器的低功率，低噪声和更高度集成的非易失性存储器。
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