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    Organic electroluminescence element, method for producing organic electroluminescence element, and illumination device using organic electroluminescence element
    5.
    发明授权
    Organic electroluminescence element, method for producing organic electroluminescence element, and illumination device using organic electroluminescence element 有权
    有机电致发光元件，有机电致发光元件的制造方法以及使用有机电致发光元件的照明装置

    公开(公告)号：US08987711B2

    公开(公告)日：2015-03-24

    申请号：US13510077

    申请日：2010-11-18

    申请人： Kunimasa Hiyama ,  Toshiya Kondo ,  Takeshi Ono

    发明人： Kunimasa Hiyama ,  Toshiya Kondo ,  Takeshi Ono

    IPC分类号： H01L51/52 ,  H01L33/34 ,  H01L33/48 ,  G02B5/02

    CPC分类号： H01L51/5275 ,  G02B5/0231 ,  H01L51/5253

    摘要： Provided is an organic electroluminescence element containing a light transmissive base material laminated thereon a transparent electrode, a light emitting layer and a counter electrode in this order, wherein the light transmissive base material contains a light transmissive resin substrate (resin substrate B) provided with a hard coat layer on both surfaces of the light transmissive resin substrate, the hard coat layers containing metal oxide nano particles; and the transparent electrode is formed on one hard coat layer (H1); and a rugged structure is formed on one surface of the other hard coat layer (H2), the one surface being opposite to another surface of the other hard coat layer (H2) which is contacted with the light transmissive resin substrate (resin substrate B).

    摘要翻译： 本发明提供一种有机电致发光元件，其含有依次层叠在透明电极，发光层和对电极上的透光性基材，其中，所述透光性基材含有透光性树脂基板（树脂基板B） 透光性树脂基板的两面的硬涂层，含有金属氧化物纳米粒子的硬涂层; 并且透明电极形成在一个硬涂层（H1）上; 在另一个硬涂层（H2）的一个表面上形成凹凸的结构，该一个表面与另一个与透光树脂基板（树脂基板B）接触的硬涂层（H2）的另一表面相对， 。

    Wavelength division multiplexing device and method of detecting input break of optical signal
    6.
    发明授权
    Wavelength division multiplexing device and method of detecting input break of optical signal 有权
    波分复用装置及检测光信号输入断点的方法

    公开(公告)号：US08200091B2

    公开(公告)日：2012-06-12

    申请号：US12642514

    申请日：2009-12-18

    申请人： Kazuhiro Kunimatsu ,  Takeshi Ono

    发明人： Kazuhiro Kunimatsu ,  Takeshi Ono

    IPC分类号： H04J14/02

    CPC分类号： H04B10/07955 ,  H04B10/25133 ,  H04J14/0221

    摘要： A wavelength division multiplexing device comprises a detection unit to detect the low-frequency signal in the optical signal; and a control unit to control to make the dispersion compensator perform a compensation operation by determining that the optical signal is being input when a low-frequency signal is detected in the optical signal in the detection unit, and to control to stop a compensation operation of the dispersion compensator by determining that there is an input break of the optical signal when a low-frequency signal is not detected in the optical signal in the detection unit.

    摘要翻译： 波分复用装置包括：检测单元，用于检测光信号中的低频信号; 以及控制单元，用于通过在检测单元中的光信号中检测到低频信号时确定正在输入光信号来进行色散补偿器的补偿操作，并且控制以停止补偿操作 该色散补偿器通过在检测单元中的光信号中未检测到低频信号时确定存在光信号的输入断点。

    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
    半导体器件和显示器件

    公开(公告)号：US20120112194A1

    公开(公告)日：2012-05-10

    申请号：US13232251

    申请日：2011-09-14

    申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

    发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

    IPC分类号： H01L33/08

    CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

    摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

    摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

    THIN FILM TRANSISTOR AND DISPLAY DEVICE
    8.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
    薄膜晶体管和显示器件

    公开(公告)号：US20110198606A1

    公开(公告)日：2011-08-18

    申请号：US13010281

    申请日：2011-01-20

    申请人： Koji Oda ,  Tomoyuki Irizumi ,  Naoki Nakagawa ,  Takeshi Ono

    发明人： Koji Oda ,  Tomoyuki Irizumi ,  Naoki Nakagawa ,  Takeshi Ono

    IPC分类号： H01L33/16 ,  H01L29/786

    CPC分类号： H01L29/78696 ,  H01L29/04

    摘要： An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.

    摘要翻译： 本发明的示例性方面是一种薄膜晶体管，包括：形成在基板上的栅电极; 栅极绝缘膜，其包括氮化物膜并覆盖所述栅电极; 以及半导体层，其被设置为与栅极电极相对设置，其间具有栅极绝缘膜，并且具有形成在至少与氮化物膜接触的界面中的微晶半导体层，其中微晶半导体层包含氧 在至少与氮化物膜的界面附近的浓度高于含氮的浓度，氮从氮化膜扩散。

    Regenerative relay system and regenerative relay apparatus
    10.
    发明授权
    Regenerative relay system and regenerative relay apparatus 有权
    再生继电器系统和再生中继装置

    公开(公告)号：US07844883B2

    公开(公告)日：2010-11-30

    申请号：US11284210

    申请日：2005-11-21

    申请人： Takeshi Ono

    发明人： Takeshi Ono

    IPC分类号： H03M13/00

    CPC分类号： H03M13/3738 ,  H03M13/3715 ,  H04L1/0045 ,  H04L1/0061 ,  H04L1/203 ,  H04L2001/0097

    摘要： A regenerative relay method includes the steps of: i) calculating an error rate of a transmission path between the first half apparatus and a main apparatus; ii) calculating an error rate of a transmission path between the main apparatus and the latter apparatus; iii) adding the error rates; iv) selecting the error correction code and data before the error is corrected in the main apparatus so as to be supplied to the latter apparatus if the added error rates are lower than a designated error correction threshold; and v) selecting data after the error is corrected in the main apparatus and the other error correction code generated from the data so as to be supplied to the latter apparatus if the added error rates are higher than the designated error correction threshold.

    摘要翻译： 再生中继方法包括以下步骤：i）计算上半部装置与主装置之间的传输路径的误码率; ii）计算主设备与后一设备之间的传输路径的错误率; iii）增加错误率; iv）在主装置中纠正错误之前选择纠错码和数据，以便如果所附加的误码率低于指定的纠错阈值，则将其提供给后一装置; 以及v）在主设备中纠错错误之后选择数据，以及从数据生成的其他纠错码，以便如果所添加的错误率高于指定的纠错阈值，则提供给后一设备。