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    Extension of contact pads to the die edge via electrical isolation
    1.
    发明授权
    Extension of contact pads to the die edge via electrical isolation 有权
    通过电气隔离将接触垫延伸到管芯边缘

    公开(公告)号：US07977132B2

    公开(公告)日：2011-07-12

    申请号：US12436442

    申请日：2009-05-06

    申请人： Tal Margalith ,  Stefano Schiaffino ,  Henry Kwong-Hin Choy

    发明人： Tal Margalith ,  Stefano Schiaffino ,  Henry Kwong-Hin Choy

    IPC分类号： H01L21/00

    CPC分类号： H01L33/385 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Light emitting diode (LED) dies are fabricated by forming LED layers including a first conductivity type layer, a light-emitting layer, and a second conductivity type layer. Trenches are formed in the LED layers that reach at least partially into the first conductivity type layer. Electrically insulation regions are formed in or next to at least portions of the first conductivity type layer along the die edges. A first conductivity bond pad layer is formed to electrically contact the first conductivity type layer and extend over the singulation streets between the LED dies. A second conductivity bond pad layer is formed to electrically contact the second conductivity type layer, and extend over the singulation streets between the LED dies and the electrically insulated portions of the first conductivity type layer. The LED dies are mounted to submounts and the LED dies are singulated along the singulation streets between the LED dies.

    摘要翻译： 通过形成包括第一导电型层，发光层和第二导电型层的LED层来制造发光二极管（LED）管芯。 在LED层中形成沟槽，其至少部分地到达第一导电类型层。 电绝缘区域沿着模头边缘形成在第一导电类型层的至少部分中或其旁边。 第一导电接合焊盘层形成为与第一导电类型层电接触并且在LED管芯之间的分隔街道上延伸。 第二导电接合焊盘层形成为与第二导电类型层电接触，并且延伸在LED管芯与第一导电类型层的电绝缘部分之间的分隔街道上。 LED管芯安装到基座上，LED管芯沿着LED管芯之间的单线路划分。

    SERIES CONNECTED FLIP CHIP LEDS WITH GROWTH SUBSTRATE REMOVED
    3.
    发明申请
    SERIES CONNECTED FLIP CHIP LEDS WITH GROWTH SUBSTRATE REMOVED 有权
    系列连接的切片芯片，带有生长基板去除

    公开(公告)号：US20120025231A1

    公开(公告)日：2012-02-02

    申请号：US13269669

    申请日：2011-10-10

    申请人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    发明人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    IPC分类号： H01L33/08

    CPC分类号： H01L33/0079 ,  H01L21/2654 ,  H01L27/153

    摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

    摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。

    Series connected flip chip LEDs with growth substrate removed
    5.
    发明授权
    Series connected flip chip LEDs with growth substrate removed 有权
    串联连接的倒装芯片LED与生长衬底被去除

    公开(公告)号：US08450754B2

    公开(公告)日：2013-05-28

    申请号：US13269669

    申请日：2011-10-10

    申请人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    发明人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    IPC分类号： H01L29/18

    CPC分类号： H01L33/0079 ,  H01L21/2654 ,  H01L27/153

    摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

    摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。

    Series connected flip chip LEDs with growth substrate removed
    8.
    发明授权
    Series connected flip chip LEDs with growth substrate removed 有权
    串联连接的倒装芯片LED与生长衬底被去除

    公开(公告)号：US08062916B2

    公开(公告)日：2011-11-22

    申请号：US12266162

    申请日：2008-11-06

    申请人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    发明人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L21/2654 ,  H01L27/153

    摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

    摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。