公开(公告)号：US20110027968A1

公开(公告)日：2011-02-03

申请号：US12899993

申请日：2010-10-07

申请人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Tetsuya KAKEHATA

发明人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Tetsuya KAKEHATA

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/31662 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1229 ,  H01L29/66772 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/80001

摘要： A semiconductor device including a plurality of field-effect transistors which are stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates, and the semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer.

摘要翻译： 一种半导体器件，包括多个场效应晶体管，所述多个场效应晶体管在其间具有绝缘表面的衬底上层叠有平坦化层，所述多个场效应晶体管中的半导体层与半导体衬底分离，并且所述半导体层 被结合到形成在具有形成在平坦化层上的绝缘表面或绝缘层的衬底上的绝缘层。

公开(公告)号：US20090098739A1

公开(公告)日：2009-04-16

申请号：US12244414

申请日：2008-10-02

申请人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/31

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.

摘要翻译： 本发明的目的是提供一种制造具有半导体层的SOI衬底的方法，即使在使用诸如玻璃衬底的上限温度低的衬底的情况下也可以使用。 制造方法损害了制备其表面上形成有接合层的半导体衬底和从其表面形成在预定深度的分离层的步骤，将接合层粘合到具有700°的变形点的基底 C.或更低，使得半导体衬底和基底基板彼此面对，并且通过热处理在分离层处分离半导体衬底的一部分，以在基底衬底上形成单晶半导体层。 在制造方法中，使用至少通过热处理各向同性收缩的基板作为基底。

公开(公告)号：US20090072343A1

公开(公告)日：2009-03-19

申请号：US12207634

申请日：2008-09-10

申请人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/00

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654

摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.

摘要翻译： 使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。 而且，不用化学抛光而形成的高性能半导体器件。 此外，使用该半导体器件的电子设备。 包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为 大于或等于1nm且小于或等于7nm。 或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。 或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

公开(公告)号：US20110073934A1

公开(公告)日：2011-03-31

申请号：US12963847

申请日：2010-12-09

申请人： Tamae TAKANO ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

发明人： Tamae TAKANO ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/792

CPC分类号： H01L27/1157 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/13 ,  H01L29/4234 ,  H01L29/792 ,  H01L29/7923

摘要： The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.

公开(公告)号：US20090096054A1

公开(公告)日：2009-04-16

申请号：US12237606

申请日：2008-09-25

申请人： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Tetsuya KAKEHATA

发明人： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Tetsuya KAKEHATA

IPC分类号： H01L29/00 ,  H01L21/762

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/78621

摘要： A semiconductor device including a semiconductor substrate is provided. The semiconductor substrate includes a substrate having an insulating surface, and a plurality of stacks over the substrate having an insulating surface. Each of the plurality of stacks includes a bonding layer over the substrate having an insulating surface, an insulating layer over the bonding layer, and a single crystal semiconductor layer over the insulating layer. The substrate having an insulating surface has a depression, and the depression is provided between one of the plurality of stacks and another adjacent one of the plurality of stacks.

摘要翻译： 提供了包括半导体衬底的半导体器件。 半导体衬底包括具有绝缘表面的衬底和在衬底上的多个堆叠，其具有绝缘表面。 多个堆叠中的每一个在基板上包括具有绝缘表面的接合层，接合层上的绝缘层以及绝缘层上的单晶半导体层。 具有绝缘表面的基板具有凹陷，并且凹陷设置在多个叠层中的一个和多个叠层中的另一个相邻的堆叠之间。

公开(公告)号：US20110263096A1

公开(公告)日：2011-10-27

申请号：US13177584

申请日：2011-07-07

申请人： Hideto OHNUMA ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Shunpei YAMAZAKI

IPC分类号： H01L21/265

CPC分类号： H01L21/76254 ,  H01L21/302

摘要： A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOT substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A.

摘要翻译： 一种方法被证明可以制造具有高产量的SOI衬底，同时可以有效地利用资源。 本发明的特征在于重复以下处理A和方法B. 方法A包括用聚簇离子照射半导体晶片的表面以在半导体晶片中形成分离层。 然后将半导体晶片和具有绝缘表面的基板彼此重叠并结合，然后进行热处理以在分离层处或周围分离半导体晶片。 通过方法A同时获得在具有绝缘表面的基板上具有结晶半导体层的分离晶片和SOT基板。工艺B包括处理用于再利用的分离晶片，其允许分离晶片连续地经受 过程A.

公开(公告)号：US20110212596A1

公开(公告)日：2011-09-01

申请号：US13106158

申请日：2011-05-12

申请人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2007

摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

摘要翻译： 要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。 用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。 激光照射在还原气氛或惰性气氛下进行。

公开(公告)号：US20110097872A1

公开(公告)日：2011-04-28

申请号：US12986582

申请日：2011-01-07

申请人： Shunpei YAMAZAKI ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Hideto OHNUMA

IPC分类号： H01L21/3105

CPC分类号： H01L21/2007 ,  H01L21/76254

摘要： A first substrate of single-crystal silicon within which is formed an embrittled layer and over a surface of which is formed a first insulating film is provided; a second insulating film is formed over a surface of a second substrate; at least one surface of either the first insulating film or the second insulating film is exposed to a plasma atmosphere or an ion atmosphere, and that surface of the first insulating film or the second insulating film is activated; the first substrate and the second substrate are bonded together with the first insulating film and the second insulating film interposed therebetween; a single-crystal silicon film is separated from the first substrate at an interface of the embrittled layer of the first substrate, and a thin film single-crystal silicon film is formed over the second substrate with the first insulating film and the second insulating film interposed therebetween.

摘要翻译： 提供了单晶硅的第一基板，其中形成有脆化层，并且其表面上形成有第一绝缘膜; 在第二基板的表面上形成第二绝缘膜; 第一绝缘膜或第二绝缘膜的至少一个表面暴露于等离子体气氛或离子气氛中，并且第一绝缘膜或第二绝缘膜的表面被激活; 第一基板和第二基板与第一绝缘膜和第二绝缘膜接合在一起; 在第一衬底的脆化层的界面处将单晶硅膜与第一衬底分离，并且在第二衬底上形成薄膜单晶硅膜，其中第一绝缘膜和第二绝缘膜插入 之间。

公开(公告)号：US20100264421A1

公开(公告)日：2010-10-21

申请号：US12824747

申请日：2010-06-28

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO ,  Hideto OHNUMA

IPC分类号： H01L33/00

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

摘要翻译： 本发明提供一种具有高操作性能和高可靠性的半导体器件。 在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。 不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。 结果，实现了具有小的截止电流值的TFT结构。 在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

公开(公告)号：US20100151663A1

公开(公告)日：2010-06-17

申请号：US12634107

申请日：2009-12-09

申请人： Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： When the single crystal semiconductor layer is melted, the outward diffusion of oxygen is promoted. Specifically, an SOI substrate is formed in such a manner that an SOI structure having a bonding layer including oxygen provided over a base substrate and a single crystal semiconductor layer provided over the bonding layer including oxygen is formed, and part of the single crystal semiconductor layer is melted by irradiation with a laser beam in a state that the base substrate is heated at a temperature of higher than or equal to 500° C. and lower than a melting point of the base substrate.

摘要翻译： 当单晶半导体层熔化时，氧的向外扩散被促进。 具体地，形成SOI衬底，其中形成具有设置在基底衬底上的包含氧的结合层的SOI结构和设置在包括氧的接合层上的单晶半导体层，并且部分单晶半导体层 在基底基板在高于或等于500℃且低于基底的熔点的温度下被加热的状态下通过用激光束照射而熔化。