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    Amorphous carbon electrode and a secondary battery having such an electrode
    2.
    发明授权
    Amorphous carbon electrode and a secondary battery having such an electrode 失效
    无定形碳电极和具有这种电极的二次电池

    公开(公告)号：US5773167A

    公开(公告)日：1998-06-30

    申请号：US657269

    申请日：1996-06-03

    申请人： Naoki Iwasaki ,  Takeharu Inoue ,  Isamu Sakuma ,  Naoki Shimoyama ,  Jun Tsukamoto ,  Keizo Ono

    发明人： Naoki Iwasaki ,  Takeharu Inoue ,  Isamu Sakuma ,  Naoki Shimoyama ,  Jun Tsukamoto ,  Keizo Ono

    IPC分类号： H01M4/58 ,  H01M4/587 ,  H01M10/0525 ,  H01M10/36

    CPC分类号： H01M4/587 ,  H01M10/0525

    摘要： An amorphous carbon material, especially for an electrode of a lithium ion secondary battery, is characterized by an interlayer spacing d(002), obtained from the X-ray diffraction line assigned to the (002) plane of the carbon, of 0.345 nm to 0.365 nm, a ratio (Ps) os the number of carbon atoms involved in the layer structure to the total number of carbon atoms of from 0.54 to 0.85, and a ratio of the total nitrogen:total carbon atoms in the amorphous carbon of 0.005:1 to 0.055:1. The amorphous carbon material is prepared by applying a heat treatment to an amorphous carbon under under vacuum or inert gas atmosphere for at least 30 minutes to provide the desired crystalline structure. The carbon material may take the form of carbon fiber material, especially short carbon fibers obtained by pulverizing larger carbon fibers. A lithium ion secondary battery containing an electrode comprising such an amorphous carbon material has a large discharge capacity and high charge-discharge cycle characteristics.

    摘要翻译： 特别是锂离子二次电池用电极的无定形碳材料的特征在于，将从分配给（002）面的X射线衍射线得到的层间距d（002）为0.345nm〜 0.363nm，层结构中涉及的碳原子数与碳原子总数的比例（Ps）为0.54〜0.85，无定形碳中的总氮：总碳原子数的比例为0.005： 1至0.055：1。 通过在真空或惰性气体气氛下对非晶碳进行热处理至少30分钟制备无定形碳材料，以提供所需的晶体结构。 碳材料可以采取碳纤维材料的形式，特别是通过粉碎较大的碳纤维获得的短碳纤维。 包含这种无定形碳材料的电极的锂离子二次电池具有大的放电容量和高的充放电循环特性。

    Gate insulating material, gate insulating film and organic field-effect transistor
    4.
    发明授权
    Gate insulating material, gate insulating film and organic field-effect transistor 有权
    栅极绝缘材料，栅极绝缘膜和有机场效应晶体管

    公开(公告)号：US09048445B2

    公开(公告)日：2015-06-02

    申请号：US12933417

    申请日：2009-02-27

    申请人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

    发明人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

    IPC分类号： H01L29/78 ,  H01L51/05 ,  C08G59/30 ,  C08G59/32 ,  C08G65/20 ,  C08G77/14 ,  C09D163/00 ,  H01L21/02 ,  H01L21/312 ,  G03F7/075 ,  H01B3/40 ,  H01B3/46 ,  H01L51/00

    CPC分类号： H01L51/052 ,  C08G59/306 ,  C08G59/3281 ,  C08G65/20 ,  C08G77/14 ,  C09D163/00 ,  G03F7/0757 ,  H01B3/40 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0545

    摘要： To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1): R1mSi(OR2)4-m  (1), wherein R1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R1s are present, R1s may be the same or different, R2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R2s are present, R2s may be the same or different, and m represents an integer of 1 to 3, and an epoxy group-containing silane compound represented by the general formula (2): R3nR4lSi(OR5)4-n-1  (2), wherein R3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R4s are present, R4s may be the same or different, R5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R5s are present, R5s may be the same or different, l represents an integer of 0 to 2, and n represents 1 or 2 (however, l+n≦3).

    摘要翻译： 为了提供耐化学性高的栅极绝缘材料，具有优异的抗蚀剂和有机半导体涂布液的涂布性，并且具有较小的滞后性，栅极绝缘膜和使用该绝缘材料的FET通过具有含环氧基的聚硅氧烷 硅烷化合物作为共聚成分。 含有作为共聚成分的至少一种由通式（1）表示的硅烷化合物的聚硅氧烷的栅绝缘材料：R1mSi（OR2）4-m（1），其中R1表示氢，烷基，环烷基 ，杂环基，芳基，杂芳基或烯基，在存在多个R 1的情况下，R 1可以相同或不同，R 2表示烷基或环烷基，在 存在多个R 2，R 2可以相同或不同，m表示1〜3的整数，和由通式（2）表示的含环氧基的硅烷化合物：R3nR4lSi（OR5）4-n- 1（2）其中R3表示一部分链中具有一个或多个环氧基的烷基或环烷基，在存在多个R 3的情况下，R 3可以相同或不同，R 4表示氢 ，烷基，环烷基，杂环基，芳基g 稠环，杂芳基或烯基，在存在多个R 4的情况下，R 4可以相同或不同，R 5表示烷基或环烷基，在存在多个R 5的情况下， R5可以相同或不同，l表示0〜2的整数，n表示1或2（然而，l + n＆nlE; 3）。