公开(公告)号：US06225217B1

公开(公告)日：2001-05-01

申请号：US09439809

申请日：1999-11-12

申请人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

发明人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

IPC分类号： H01L214753

CPC分类号： H01L21/022 ,  H01L21/0212 ,  H01L21/02134 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/0332 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3124 ,  H01L21/3205 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813

摘要： A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a metal film or a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, the metal film or the second insulating film is patterned to a prescribed pattern. An opening is formed in the first insulating film using the metal film or the second insulating film as a mask.

摘要翻译： 在半导体衬底上形成介电常数比氧化硅膜低的第一绝缘膜。 接着，在第一绝缘膜上形成金氧膜或第二绝缘膜，其在氧等离子体处理中具有湿度吸收和变形程度，并且暴露于等于或小于氧化硅膜的抗蚀剂释放溶液 。 然后，将金属膜或第二绝缘膜图案化为规定的图案。 使用金属膜或第二绝缘膜作为掩模在第一绝缘膜中形成开口。

公开(公告)号：US6140225A

公开(公告)日：2000-10-31

申请号：US104714

申请日：1998-06-25

申请人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

发明人： Tatsuya Usami ,  Hidemitsu Aoki ,  Yasuaki Tsuchiya ,  Shinya Yamasaki

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4753 ,  H01L21/461

CPC分类号： H01L21/32139 ,  H01L21/0332 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3205 ,  H01L21/32136 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/3124

摘要： A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, a third insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film are formed on the second insulating film. Thereafter, the third insulating film is patterned to a prescribed pattern. An opening is formed in the first and second insulating films using the third insulating film as a mask.

摘要翻译： 在半导体衬底上形成介电常数比氧化硅膜低的第一绝缘膜。 接下来，在第一绝缘膜上形成第二绝缘膜，其在氧等离子体处理中具有吸湿变形程度，并且暴露于等于或小于氧化硅膜的抗蚀剂释放溶液。 然后，在第二绝缘膜上形成第三绝缘膜，其在氧等离子体处理中具有吸湿变形程度，并且暴露于等于或小于氧化硅膜的抗蚀剂释放溶液。 此后，将第三绝缘膜图案化为规定的图案。 使用第三绝缘膜作为掩模在第一绝缘膜和第二绝缘膜中形成开口。

公开(公告)号：US08420549B2

公开(公告)日：2013-04-16

申请号：US12954207

申请日：2010-11-24

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： H01L21/306

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： A method of manufacturing a semiconductor device includes preparing a semiconductor wafer having a device area, an end face, and a surface peripheral area located outside the device area and between the end face and the device area. Forming a Cu layer on the semiconductor wafer and rotating the wafer in a horizontal plane. Emitting a first liquid from an edge nozzle towards the surface peripheral area which selectively removes a first unnecessary material in the surface peripheral area. Emitting a protecting liquid toward the semiconductor wafer, thereby protecting the device area from the first liquid. An angle of a longitudinal axis of the edge nozzle with respect to a tangent of the semiconductor wafer at a point, where the longitudinal axis of the edge nozzle intersects the end face of the wafer, is set in the range of 0 to 90 degrees in plan view.

摘要翻译： 制造半导体器件的方法包括制备具有位于器件区域外部以及端面与器件区域之间的器件区域，端面和表面周边区域的半导体晶片。 在半导体晶片上形成Cu层并在水平面上旋转晶片。 从边缘喷嘴朝向表面周边区域发射第一液体，其选择性地去除表面周边区域中的第一不需要的材料。 向半导体晶片发射保护液体，从而保护装置区域免受第一液体的影响。 边缘喷嘴的纵向轴线相对于半导体晶片的切线在边缘喷嘴的纵向轴线与晶片的端面相交的点处的角度设定在0至90度的范围内 平面图。

公开(公告)号：US07862658B2

公开(公告)日：2011-01-04

申请号：US11144692

申请日：2005-06-06

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back nozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

摘要翻译： 提供了一种蚀刻/清洁装置，这使得可以有效地去除存在于半导体晶片上的不需要的材料或材料，而不会损害具有良好可控性的装置区域。 该装置包括：（a）用于保持半导体晶片并用于在水平面内旋转晶片的旋转装置; 所述晶片在其表面上具有器件面积和表面周边区域; 表面周边区域位于装置区域外部; 和（b）用于向晶片的表面周边区域喷射蚀刻/清洗液体的边缘喷嘴。 从边缘喷嘴排出的蚀刻/清洗液选择性地去除表面周边区域中存在的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。 可以另外设置背喷嘴以朝向晶片的后中心发射蚀刻/清洁液体。 可以另外设置表面喷嘴以朝向晶片的表面中心发射保护液体，覆盖设备区域以保护其免受蚀刻/清洁液体的影响。

公开(公告)号：US06833109B1

公开(公告)日：2004-12-21

申请号：US09534296

申请日：2000-03-23

申请人： Hidemitsu Aoki ,  Shinya Yamasaki

发明人： Hidemitsu Aoki ,  Shinya Yamasaki

IPC分类号： B01J1900

CPC分类号： H01L21/02074 ,  H01L21/67057 ,  Y10S134/902

摘要： In an apparatus, after completion of a CMP (i.e., chemical mechanical polishing) operation of a semiconductor wafer, the thus polished wafer is temporarily stored in a water tank before it is subjected to a post-CMP cleaning operation. During its storage period in the water tank, the wafer is prevented from being chemically attacked by an oxidizing agent contained in an abrasive used in the CMP operation. The apparatus includes: the water tank for storing the wafer therein; a pure water supply pipe for supplying pure water to the water tank; an anticorrosion agent supply pipe for supplying an anticorrosion agent to the pure water; a drain pipe connected with a lower portion of the water tank to discharge the water from the water tank; a return pipe for returning the discharged water to an upper portion of the water tank through a pump and a filter, the return pipe branching-off from the drain pipe; and, valves mounted on these pipes. The water tank is filled with pure water, to which an anticorrosion agent (i.e., benzotriazole) is added to prepare a solution in which the wafer is immersed after polishing.

摘要翻译： 在设备中，在完成半导体晶片的CMP（即化学机械抛光）操作之后，将这样抛光的晶片在进行后CMP清洗操作之前暂时储存在水箱中。 在水箱中的储存期间，防止晶片被包含在CMP操作中使用的磨料中的氧化剂所化学侵蚀。 该装置包括：用于将晶片存储在其中的水箱; 用于向水箱供应纯水的纯净水供水管; 用于向纯水供应防腐剂的防腐剂供给管; 与水箱的下部连接的排水管，以从水箱排出水; 用于通过泵和过滤器将排出的水返回到水箱的上部的回流管，该回流管从排水管分支; 和安装在这些管道上的阀。 水箱装满纯水，加入防腐剂（即苯并三唑）以制备抛光后晶片浸入的溶液。

公开(公告)号：US06683007B1

公开(公告)日：2004-01-27

申请号：US09525445

申请日：2000-03-14

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： H01L21302

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： An etching/cleaning method makes it possible to effectively remove unnecessary materials on a semiconductor wafer, having a surface peripheral area and a surface device area, without damaging the device area. The semiconductor is rotated in a horizontal plane while an etching/cleaning liquid is emitted by an edge nozzle toward the surface peripheral area, thereby selectively etching an unnecessary material in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer.

摘要翻译： 蚀刻/清洁方法使得可以有效地去除具有表面周边区域和表面装置区域的半导体晶片上的不必要的材料，而不会损坏器件面积。 半导体在水平面上旋转，同时通过边缘喷嘴向表面周边区域喷射蚀刻/清洗液体，从而选择性地蚀刻表面周边区域中的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。

公开(公告)号：US06964724B2

公开(公告)日：2005-11-15

申请号：US10665148

申请日：2003-09-22

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： B08B3/02 ,  B08B3/08 ,  C23F1/00 ,  C23F1/08 ,  C23F1/18 ,  C23F1/26 ,  C23G3/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/687 ,  B08B3/00 ,  C23C1/00

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back nozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

摘要翻译： 提供了一种蚀刻/清洁装置，这使得可以有效地去除存在于半导体晶片上的不需要的材料或材料，而不会损害具有良好可控性的装置区域。 该装置包括：（a）用于保持半导体晶片并用于在水平面内旋转晶片的旋转装置; 所述晶片在其表面上具有器件面积和表面周边区域; 表面周边区域位于装置区域外部; 和（b）用于向晶片的表面周边区域喷射蚀刻/清洗液体的边缘喷嘴。 从边缘喷嘴排出的蚀刻/清洗液选择性地去除表面周边区域中存在的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。 可以另外设置背喷嘴以朝向晶片的后中心发射蚀刻/清洁液体。 可以另外设置表面喷嘴以朝向晶片的表面中心发射保护液体，覆盖设备区域以保护其免受蚀刻/清洁液体的影响。

公开(公告)号：US20050257889A1

公开(公告)日：2005-11-24

申请号：US11144692

申请日：2005-06-06

申请人： Shinya Yamasaki ,  Hidemitsu Aoki

发明人： Shinya Yamasaki ,  Hidemitsu Aoki

IPC分类号： B08B3/02 ,  B08B3/08 ,  C23F1/00 ,  C23F1/08 ,  C23F1/18 ,  C23F1/26 ,  C23G3/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/687

CPC分类号： C23F1/26 ,  B08B3/02 ,  C23F1/08 ,  C23F1/18 ,  C23G3/00 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68707

摘要： An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back rozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

摘要翻译： 提供了一种蚀刻/清洁装置，这使得可以有效地去除存在于半导体晶片上的不需要的材料或材料，而不会损害具有良好可控性的装置区域。 该装置包括：（a）用于保持半导体晶片并用于在水平面内旋转晶片的旋转装置; 所述晶片在其表面上具有器件面积和表面周边区域; 表面周边区域位于装置区域外部; 和（b）用于向晶片的表面周边区域喷射蚀刻/清洗液体的边缘喷嘴。 从边缘喷嘴排出的蚀刻/清洗液选择性地去除表面周边区域中存在的不需要的材料。 从边缘喷嘴排出的蚀刻/清洗液优选具有沿着晶片的旋转方向取向的发射方向或者相对于在液晶与晶片的表面周边区域的接触点附近形成的晶片的切线。 可以另外设置背部喷嘴以朝向晶片的后中心发射蚀刻/清洁液体。 可以另外设置表面喷嘴以朝向晶片的表面中心发射保护液体，覆盖设备区域以保护其免受蚀刻/清洁液体的影响。

公开(公告)号：US06767409B2

公开(公告)日：2004-07-27

申请号：US10075566

申请日：2002-02-13

申请人： Hidemitsu Aoki ,  Shinya Yamasaki

发明人： Hidemitsu Aoki ,  Shinya Yamasaki

IPC分类号： B08B308

CPC分类号： H01L21/3212 ,  B08B3/08 ,  B24B37/042 ,  H01L21/02074 ,  H01L21/0209

摘要： A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using aqueous ammonia at 0.0001-0.5 weight percent, catholyte or hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

摘要翻译： 对于集成在半导体衬底上的高速逻辑电路，铜布线是期望的，并且通过化学机械抛光进行图案化，其中通过使用0.0001-0.5的氨水将抛光颗粒从所得半导体结构的主表面上刷去 重量百分比，阴极电解液或含氢水，而不损坏铜布线，此后，通过使用洗涤剂除去选自多元羧酸，其铵盐和聚氨基羧酸的洗涤剂，也不损坏铜 接线。

公开(公告)号：US06387190B1

公开(公告)日：2002-05-14

申请号：US09313027

申请日：1999-05-17

申请人： Hidemitsu Aoki ,  Shinya Yamasaki

发明人： Hidemitsu Aoki ,  Shinya Yamasaki

IPC分类号： B08B308

CPC分类号： H01L21/3212 ,  B08B3/08 ,  B24B37/042 ,  H01L21/02074 ,  H01L21/0209

摘要： A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

摘要翻译： 对于集成在半导体衬底上的高速逻辑电路，铜布线是期望的，并且通过化学机械抛光进行图案化，其中抛光颗粒通过使用含氢水而无损伤地从所得半导体结构的主表面被刷去 然后通过使用选自多元羧酸，其铵盐和聚氨基羧酸的去污剂的洗涤剂除去铜布等金属污染物，同时也不会损坏铜布线。