公开(公告)号：US5939771A

公开(公告)日：1999-08-17

申请号：US739746

申请日：1996-10-29

申请人： Tatsuya Usami ,  Tetsuya Homma

发明人： Tatsuya Usami ,  Tetsuya Homma

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044

摘要： On manufacturing a semiconductor device, preparation is made of an organic layer (101) of a resin which has a relative dielectric constant between 1.8 and 3.5, both inclusive, and which is selected from the group consisting of a polyimide resin and a fluororesin. The organic layer has a slit. A first metal (105) is buried in the slit. A silicon oxide layer (106) containing fluorine is formed on the organic layer so that the silicon oxide layer has a hole on the first metal. A second metal (107) is buried in the hole. Preferably, an additional organic layer (101') of the resin is formed on the silicon oxide layer so that the additional organic layer has an additional slit on the second metal. In this case, a first additional metal (105') is buried in the additional slit. In addition, an additional silicon oxide layer (106') containing fluorine may be formed on the additional organic layer so that the additional silicon oxide layer has an additional hole on the first additional metal. In this event, a second additional metal (107') is buried in the additional hole.

摘要翻译： 在制造半导体器件时，由相对介电常数在1.8和3.5之间的树脂的有机层（101）制成，并且选自聚酰亚胺树脂和氟树脂。 有机层具有狭缝。 第一金属（105）被埋在狭缝中。 在有机层上形成含有氟的氧化硅层（106），使得氧化硅层在第一金属上具有孔。 第二金属（107）被埋在孔中。 优选地，在氧化硅层上形成树脂的附加有机层（101'），使得附加的有机层在第二金属上具有附加的狭缝。 在这种情况下，第一附加金属（105'）埋在附加狭缝中。 此外，可以在附加的有机层上形成含有氟的另外的氧化硅层（106'），使得另外的氧化硅层在第一附加金属上具有另外的孔。 在这种情况下，第二附加金属（107'）埋在附加孔中。

公开(公告)号：US5468682A

公开(公告)日：1995-11-21

申请号：US355008

申请日：1994-12-13

申请人： Tetsuya Homma

发明人： Tetsuya Homma

IPC分类号： C09K3/14 ,  C01B33/18 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/463

CPC分类号： H01L21/31053

摘要： Disclosed herein is abrasives consisting of fine particles of fluorinated silicon oxide which do not contain alkali metal and methods of thier manufacture, and high yield and high reliability methods of manufacturing semiconductor devices by the use of these abrasives. The abrasive comprises a solution in which fine particles of fluorinated silicon oxide are dispersed is formed by addition of boric acid to an aqueous solution of hydrosilicofluoric acid or addition of pure water to an alcohol solution of alkoxyfluorosilane. By the use of these abrasives, a layer insulating film for multi-layer wiring can be flattened.

摘要翻译： 本文公开了由不含碱金属的氟化氧化硅微粒和其制造方法组成的研磨剂，以及通过使用这些研磨剂制造半导体器件的高产率和高可靠性方法。 研磨剂包括通过将硼酸加入到氢氟酸的水溶液中或者将纯水加入到烷氧基氟硅烷的醇溶液中而形成分散有氟化氧化硅微粒的溶液。 通过使用这些研磨剂，可以使用于多层布线的层绝缘膜变平。

公开(公告)号：US5288518A

公开(公告)日：1994-02-22

申请号：US894584

申请日：1992-06-05

申请人： Tetsuya Homma

发明人： Tetsuya Homma

IPC分类号： H01L21/316 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC分类号： C23C16/45514 ,  C23C16/401 ,  C23C16/45561 ,  C23C16/45595

摘要： A chemical vapor deposition method for forming a fluorine-containing silicon oxide film comprises introducing a gaseous mixture of alkoxysilane or its polymers as a source gas with fluoroalkoxysilane added thereto into a reaction chamber and performing decomposition of the gaseous mixture to deposit the fluorine-containing silicon oxide film onto a substrate. During the formation of the fluorine-containing silicon oxide film, at least one of compounds containing phosphorus or boron such as organic phosphorus compounds and organic boron compounds may be evaporated and introduced into said gaseous mixture, thereby adding at least one of phosphorus and boron to said fluorine-containing silicon oxide film. The fluorine-containing oxide film may be formed by effecting the decomposition of the gaseous mixture in the presence of ozone gas, or under ultraviolet radiation, or gas plasma.

摘要翻译： 用于形成含氟氧化硅膜的化学气相沉积方法包括将作为源气体的烷氧基硅烷或其聚合物的气体混合物与添加了氟烷氧基硅烷的反应室引入反应室，并进行气态混合物的分解以沉积含氟硅 氧化膜到基板上。 在形成含氟氧化硅膜期间，可以将至少一种含有磷或硼的化合物如有机磷化合物和有机硼化合物蒸发并引入所述气态混合物中，从而将至少一种磷和硼添加到 所述含氟氧化硅膜。 含氟氧化物膜可以通过在臭氧气体的存在下或在紫外线下或气体等离子体下进行气体混合物的分解来形成。

公开(公告)号：US5521424A

公开(公告)日：1996-05-28

申请号：US361536

申请日：1994-12-22

申请人： Kazuyoshi Ueno ,  Tetsuya Homma

发明人： Kazuyoshi Ueno ,  Tetsuya Homma

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/78 ,  H01L23/58

CPC分类号： H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31629 ,  H01L23/5329 ,  H01L2924/0002

摘要： The semiconductor device has a multilayer structure wherein a substantially pure silicon dioxide film containing substantially no fluorine atom and a silicon dioxide film containing fluorine atoms are sequentially laminated on a substrate. Etching rate of a silicon dioxide film depends on a fluorine concentration in the film, so that a suitable etch selectivity of the silicon dioxide film containing fluorine atoms from the substantially pure silicon dioxide film can be obtained to form an oxide trench used for a trench interconnection and a via-hole used for a via-plug. The oxide film containing fluorine atoms has as good a quality as the silicon dioxide film not containing impurities has, thereby obtaining a superior characteristic of the semiconductor device. Addition of fluorine atoms reduces a specific permittivity to thereby obtain a higher speed.

摘要翻译： 半导体器件具有多层结构，其中基本上不含氟原子的基本上纯的二氧化硅膜和含有氟原子的二氧化硅膜依次层压在基板上。 二氧化硅膜的蚀刻速率取决于膜中的氟浓度，从而可以获得从基本上纯的二氧化硅膜中含有氟原子的二氧化硅膜的合适蚀刻选择性，以形成用于沟槽互连的氧化物沟槽 以及用于通孔的通孔。 含有氟原子的氧化物膜的质量与不含杂质的二氧化硅膜具有良好的质量，从而获得了优异的半导体器件的特性。 氟原子的添加降低了比介电常数，从而获得更高的速度。

公开(公告)号：US5444023A

公开(公告)日：1995-08-22

申请号：US179718

申请日：1994-01-11

申请人： Tetsuya Homma

发明人： Tetsuya Homma

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76829 ,  H01L21/76826

摘要： A spin coated insulating film is coated selectively between wirings by treating the surface of a wiring layer with a fluorine compound gas plasma. The spin on glass film is made compact by exposing it to fluoroalkoxysilane vapor to accelerate condensation and polymerization of the spin coated materials. A silicon oxide film is formed by plasma excited CVD to form a flat interlayer insulating film. A fine mutilayer wiring structure can be readily formed by employing the above mentioned planarizing method of the interlayer insulating film.

摘要翻译： 通过用氟化合物气体等离子体处理布线层的表面，在布线之间选择性地涂布旋涂绝缘膜。 通过将其旋涂在氟代烷氧基硅烷蒸气上以加速旋涂层的冷凝和聚合，从而使玻璃膜上的旋涂变得紧凑。 通过等离子体激发CVD形成氧化硅膜以形成平坦的层间绝缘膜。 通过采用上述层间绝缘膜的平面化方法可以容易地形成精细的三层布线结构。

公开(公告)号：US5215787A

公开(公告)日：1993-06-01

申请号：US820254

申请日：1992-01-14

申请人： Tetsuya Homma

发明人： Tetsuya Homma

IPC分类号： H01L21/283 ,  C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/02271 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/31625 ,  H01L21/76801

摘要： It is an object of the present invention to provide an excellent silicon oxide film formed at a temperature of 200.degree. C. or less, a method of forming the silicon oxide film, and a selective growing method. According to the present invention, by using a vapor containing alkoxyfluorosilane as a main component, a silicon oxide film containing fluorine is formed at a temperature of 200.degree. C. or less in a reaction chamber having a predetermined temperature and a predetermined pressure. In addition, an organic film such as a photoresist film is used as a mask to selectively form the silicon oxide film. Although the silicon oxide film containing fluorine and formed on the basis of the present invention is formed at a very low temperature of 30.degree. C., this silicon oxide film has a water content smaller than that of a silicon oxide film formed at a temperature of 250.degree. C. in a conventional method. In addition, the film properties of the silicon oxide film according to the present invention are better than those of the silicon oxide film formed in the conventional method. Furthermore, a two-layered aluminum wiring structure can be easily formed by the selective growing method.

公开(公告)号：US5840631A

公开(公告)日：1998-11-24

申请号：US562991

申请日：1995-11-27

申请人： Akira Kubo ,  Tetsuya Homma ,  Koji Kishimoto

发明人： Akira Kubo ,  Tetsuya Homma ,  Koji Kishimoto

IPC分类号： C23C16/40 ,  H01L21/205 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/443

CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02277 ,  H01L21/31612 ,  H01L21/76801 ,  H01L2924/0002

摘要： A method of manufacturing a semiconductor device includes the following steps. A lower wiring layer is formed on a semiconductor substrate through an insulating film. A compound gas having a catalysis for promoting formation of silicon oxide is added in an atmosphere using a main component gas consisting of ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide film by a chemical vapor deposition (CVD) method directly on a surface of the semiconductor substrate on which the lower wiring layer is formed. An upper wiring layer is formed on the silicon oxide film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤。 通过绝缘膜在半导体衬底上形成下布线层。 在气氛中使用由臭氧，水蒸气和烷氧基硅烷和有机硅氧烷之一组成的主要成分气体作为源气体，在气氛中加入具有促进氧化硅形成的催化剂的复合气体，通过化学气相沉积法形成氧化硅膜 （CVD）方法直接在其上形成下布线层的半导体衬底的表面上。 在氧化硅膜上形成上部布线层。

公开(公告)号：US5744378A

公开(公告)日：1998-04-28

申请号：US755198

申请日：1996-11-25

申请人： Tetsuya Homma

发明人： Tetsuya Homma

IPC分类号： C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  C23C16/511 ,  H01L21/314 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L21/28

CPC分类号： H01L21/3145 ,  H01L21/76801

摘要： At least one of an interlayer insulating film is formed by fluorine contained silicon oxynitride which is obtained by chemical deposition growth process using fluoroalkoxysilane gas, nitrogen gas contained gas, and oxygen gas contained gas. The at least one-film is formed at a temperature of lower than 200.degree. C. As a result, reliability of a semiconductor device to be fabricated as described above is enhanced.

摘要翻译： 通过使用氟代烷氧基硅烷气体，含氮气体和含氧气体的化学沉积生长工艺获得的含氟氮氧化硅形成层间绝缘膜中的至少一个。 在低于200℃的温度下形成至少一层膜。因此，如上所述制造的半导体器件的可靠性提高。

公开(公告)号：US5506177A

公开(公告)日：1996-04-09

申请号：US394943

申请日：1995-02-24

申请人： Koji Kishimoto ,  Tetsuya Homma

发明人： Koji Kishimoto ,  Tetsuya Homma

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76801 ,  H01L21/76828 ,  H01L21/76834

摘要： After forming lower level wiring and plasma oxide layer, SOG film is applied by applying a solution containing hydrogen silsesquioxane as primary component under rotation. Pre-baking of the SOG film is performed by a first heat treatment and causes reflow thereof by a second heat treatment at a temperature higher than the first heat treatment. Subsequently, another plasma oxide layer is formed. By this, in an interlayer insulation layer including SOG film, occurrence of crack and so forth can be prevented and water resistance can be improved.

摘要翻译： 在形成下层布线和等离子体氧化物层之后，通过施加含有氢倍半硅氧烷作为主要组分的溶液来施加SOG膜。 SOG膜的预烘烤通过第一热处理进行，并且在比第一热处理高的温度下通过第二热处理使其回流。 随后，形成另一等离子体氧化物层。 由此，在包含SOG膜的层间绝缘层中，可以防止发生裂纹等，并且可以提高耐水性。

公开(公告)号：US5407529A

公开(公告)日：1995-04-18

申请号：US27728

申请日：1993-03-04

申请人： Tetsuya Homma

发明人： Tetsuya Homma

IPC分类号： H01L21/033 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/0332 ,  H01L21/0331 ,  Y10S438/95

摘要： In a pattern formation method which employs a resist system of tri-level structure the present method is characterized in that it uses a fluorine contained silicon dioxide film as the intermediate film. Since this fluorine contained silicon dioxide film can be formed at a low temperature with a small volume shrinkage, it is possible to eliminate the generation of cracks and delaminations due to heat treatment. Moreover, it is possible to improve the adhesive strength between an etching object such as a noble metal film and the lower organic film since the lower organic film can be formed by heat treatment at a low temperature.

摘要翻译： 在采用三层结构的抗蚀剂体系的图案形成方法中，本方法的特征在于，使用含氟二氧化硅膜作为中间膜。 由于含氟二氧化硅膜可以在体积小的收缩率的低温下形成，所以可以消除由于热处理引起的裂纹和分层的产生。 此外，由于可以通过在低温下的热处理来形成下部有机膜，所以可以提高诸如贵金属膜的蚀刻对象与下部有机膜之间的粘附强度。