公开(公告)号：US07642652B2

公开(公告)日：2010-01-05

申请号：US11872295

申请日：2007-10-15

申请人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

发明人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76849 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76889 ,  H01L23/53295 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13

摘要： A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

摘要翻译： 在半导体衬底上形成的氧化硅膜上形成有用于配线的沟槽的氧化硅膜和氮化硅膜，依次形成阻挡层和铜膜。 此后，从用于布线的槽的外侧除去阻挡层和铜膜，从而形成布线。 钨选择性地或优先地生长在布线上以在布线上选择性地形成钨膜。 铜膜形成后，可以进行氢处理。 在形成布线之后，可以用能够除去异物或污染金属的清洁溶液来清洁半导体衬底。 形成布线后，进行氢的处理。

公开(公告)号：US07321171B2

公开(公告)日：2008-01-22

申请号：US10970024

申请日：2004-10-22

申请人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

发明人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76849 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76889 ,  H01L23/53295 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13

摘要： A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

摘要翻译： 在半导体衬底上形成的氧化硅膜上形成有用于配线的沟槽的氧化硅膜和氮化硅膜，依次形成阻挡层和铜膜。 此后，从用于布线的槽的外侧除去阻挡层和铜膜，从而形成布线。 钨选择性地或优先地生长在布线上以在布线上选择性地形成钨膜。 铜膜形成后，可以进行氢处理。 在形成布线之后，可以用能够除去异物或污染金属的清洁溶液来清洁半导体衬底。 形成布线后，进行氢的处理。

公开(公告)号：US20050095844A1

公开(公告)日：2005-05-05

申请号：US10970024

申请日：2004-10-22

申请人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

发明人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/092

CPC分类号： H01L21/76849 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76889 ,  H01L23/53295 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13

摘要： A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

摘要翻译： 在半导体衬底上形成的氧化硅膜上形成有用于配线的沟槽的氧化硅膜和氮化硅膜，依次形成阻挡层和铜膜。 此后，从用于布线的槽的外侧除去阻挡层和铜膜，从而形成布线。 钨选择性地或优先地生长在布线上以在布线上选择性地形成钨膜。 铜膜形成后，可以进行氢处理。 在形成布线之后，可以用能够除去异物或污染金属的清洁溶液来清洁半导体衬底。 形成布线后，进行氢的处理。

公开(公告)号：US20080042282A1

公开(公告)日：2008-02-21

申请号：US11872295

申请日：2007-10-15

申请人： Tatsuyuki SAITO ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

发明人： Tatsuyuki SAITO ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76849 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76889 ,  H01L23/53295 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13

摘要： A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

摘要翻译： 在半导体衬底上形成的氧化硅膜上形成有用于配线的沟槽的氧化硅膜和氮化硅膜，依次形成阻挡层和铜膜。 此后，从用于布线的槽的外侧除去阻挡层和铜膜，从而形成布线。 钨选择性地或优先地生长在布线上以在布线上选择性地形成钨膜。 铜膜形成后，可以进行氢处理。 在形成布线之后，可以用能够除去异物或污染金属的清洁溶液来清洁半导体衬底。 形成布线后，进行氢的处理。

公开(公告)号：US06818546B2

公开(公告)日：2004-11-16

申请号：US09850162

申请日：2001-05-08

申请人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

发明人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

IPC分类号： H01L214763

CPC分类号： H01L21/76849 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76889 ,  H01L23/53295 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13

摘要： A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

摘要翻译： 在半导体衬底上形成的氧化硅膜上形成有用于配线的沟槽的氧化硅膜和氮化硅膜，依次形成阻挡层和铜膜。 此后，从用于布线的槽的外侧除去阻挡层和铜膜，从而形成布线。 钨选择性地或优先地生长在布线上以在布线上选择性地形成钨膜。 铜膜形成后，可以进行氢处理。 在形成布线之后，可以用能够除去异物或污染金属的清洁溶液来清洁半导体衬底。 形成布线后，进行氢的处理。

公开(公告)号：US06908847B2

公开(公告)日：2005-06-21

申请号：US10329831

申请日：2002-12-27

申请人： Tatsuyuki Saito ,  Naofumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

发明人： Tatsuyuki Saito ,  Naofumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

IPC分类号： H01L29/43 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/84 ,  H01L23/532 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/84 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/5329 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has first interlayer insulating film having a wiring trench; a wiring portion having a first barrier metal layer formed over side walls and bottom surface of the wiring trench, a first conductor layer formed over the first barrier metal layer to embed the wiring trench, and a capping barrier metal film formed over the first conductor layer; second interlayer insulating film formed over the first interlayer insulating film and having a connecting hole; and a connecting portion having a second barrier metal layer formed over side walls and bottom surface of the connecting hole, and a second conductor layer formed over the second barrier metal layer to embed the connecting hole; wherein, at a joint between the connecting portion and wiring portion, at least one of the second barrier metal layer and capping barrier metal film on the bottom surface of the connecting hole is removed.

摘要翻译： 半导体器件具有具有布线沟槽的第一层间绝缘膜; 布线部分，其具有形成在所述布线沟槽的侧壁和底表面上的第一阻挡金属层，形成在所述第一阻挡金属层上以嵌入所述布线沟槽的第一导体层和形成在所述第一导体层上的封盖阻挡金属膜 ; 第二层间绝缘膜，形成在所述第一层间绝缘膜上并具有连接孔; 以及连接部，其具有形成在所述连接孔的侧壁和下表面上的第二阻挡金属层，以及形成在所述第二阻挡金属层上以嵌入所述连接孔的第二导体层; 其中，在所述连接部分和所述布线部分之间的连接处，所述连接孔底面上的所述第二阻挡金属层和覆盖阻挡金属膜中的至少一个被去除。

公开(公告)号：US07053487B2

公开(公告)日：2006-05-30

申请号：US10294937

申请日：2002-11-15

申请人： Tatsuyuki Saito ,  Naofumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

发明人： Tatsuyuki Saito ,  Naofumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

IPC分类号： H01L23/48

CPC分类号： H01L21/76844 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/84 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/5329 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has first interlayer insulating film having a wiring trench; a wiring portion having a first barrier metal layer formed over side walls and bottom surface of the wiring trench, a first conductor layer formed over the first barrier metal layer to embed the wiring trench, and a capping barrier metal film formed over the first conductor layer; second interlayer insulating film formed over the first interlayer insulating film and having a connecting hole; and a connecting portion having a second barrier metal layer formed over side walls and bottom surface of the connecting hole, and a second conductor layer formed over the second barrier metal layer to embed the connecting hole; wherein, at a joint between the connecting portion and wiring portion, at least one of the second barrier metal layer and capping barrier metal film on the bottom surface of the connecting hole is removed.

公开(公告)号：US08053893B2

公开(公告)日：2011-11-08

申请号：US12489006

申请日：2009-06-22

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/52

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US07323781B2

公开(公告)日：2008-01-29

申请号：US10807222

申请日：2004-03-24

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US20060226555A1

公开(公告)日：2006-10-12

申请号：US11449814

申请日：2006-06-09

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwasaki ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/48

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.