摘要:
This invention relates to a multi-element type radiation detector for an X-ray CT scanner system wherein a plurality of scintillator blocks that are isolated either optically or radiation-wise from one another are arranged integrally, and a photo-diode consisting of an amorphous silicon layer for converting the emission of each scintillator is formed on the surface of each scintillator block by thin film technique.
摘要:
An optically reading type photo-sensor for reading out an information signal of a signal light with a signal reading light includes a first photoconductor (101) and a second photoconductor (102) interposed between two electrodes (104 and 105); an intermediate region (103) disposed between those two photoconductors for storing and recombining carriers; and an optical source (107) for emitting a signal reading light for uninformalizing the potential in said second photoconductor (102), whereby a successive signal reading can be accomplished without any special preparations for the incidence of the signal light. The photo-sensor can be applied to a variety of imaging devices.
摘要:
A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要:
A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.
摘要:
A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.
摘要:
A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.
摘要:
An apparatus for vacuum deposition comprising a turn-table for holding substrates for deposition, and a plurality of evaporation boats arranged in opposition to a circumferential part of the turn-table, the turn-table being rotated at deposition whereby vapors from the respective boats can be cyclically accumulated and stuck onto the substrates, further comprises at least one film-thickness monitor which is fixed to the turn-table and which detects the quantity of a deposited substance of one layer stuck every time the substrates pass over each boat, and means to receive a signal from the film-thickness monitor and divide the signal time sequentially, thereby detecting at least one of the deposition rate and the total amount of the vapor from each boat, and to control the quantity of the vapor arriving to the substrates for deposition from each boat while comparing the detected value with a predetermined value.
摘要:
In a photosensor having a metal electrode, at least one photoelectric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer, a recombination layer for recombining electrons and holes is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be handled as if the insulating oxide film were not existent. The dark current is suppressed, and the photo-response is made good. As the materials of the recombination layer, Sb.sub.2 S.sub.3, As.sub.2 Se.sub.3, As.sub.2 S.sub.3, Sb.sub.2 Se.sub.3 etc. are typical.
摘要:
In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要:
A method and apparatus is provided for picking up and displaying a stereoscopic image from an object permeated with radioactive rays. A plurality of radioactive rays which are non-parallel with each other are directed substantially simultaneously onto an object to generate a plurality of superimposed images of the object. The superimposed images of the object are divided into a plurality of discrete partial images formed on a pickup surface, so that each point of the object will be included in a plurality of the partial images, with the partial images showing the same point being spatially separated from one another on the pickup surface. A stereoscopic image of the object is then reconstructed by processing the partial images so that partial images generated by each of the sources of the radioactive rays will be respectively used to generate separate images of the object to form the stereoscopic image of the object.