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公开(公告)号:US07626268B2
公开(公告)日:2009-12-01
申请号:US11248554
申请日:2005-10-12
申请人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
发明人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
IPC分类号: H01L21/4763
CPC分类号: H01L24/05 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05095 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/20754 , H01L2924/30105 , H01L2924/00 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2224/05599
摘要: Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In some embodiments, the support structures include a plurality of support members that is formed in a substantially annular shape beneath a wire bond region. The central region inside the substantially annular shape of the plurality of support members may be used to route functional conductive lines for making electrical contact to active areas of the semiconductor device. Dummy support structures may optionally be formed between the functional conductive lines. The support structures may be formed in one or more conductive line layers and semiconductive material layers of a semiconductor device. In other embodiments, support members are not formed in an annular shape, and are formed in insulating layers that do not comprise low dielectric constant (k) materials.
摘要翻译: 公开了半导体器件的支撑结构及其制造方法。 在一些实施例中,支撑结构包括在线接合区域下方形成为大致环形的多个支撑构件。 多个支撑构件的大致环形形状内的中心区域可以用于路由功能导电线,用于与半导体器件的有源区电接触。 可选地,在功能导电线之间形成虚拟支撑结构。 支撑结构可以形成在半导体器件的一个或多个导电层和半导体材料层中。 在其它实施例中,支撑构件不形成为环形,并且形成为不包括低介电常数(k)材料的绝缘层。
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公开(公告)号:US07795615B2
公开(公告)日:2010-09-14
申请号:US11268854
申请日:2005-11-08
申请人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
发明人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
IPC分类号: H01L23/58
CPC分类号: H01L23/5223 , H01L23/585 , H01L27/0805 , H01L28/87 , H01L2924/0002 , H01L2924/00
摘要: An integrated circuit comprises a chip including a circuit area surrounded by a peripheral area, the peripheral area extending to an edge of the chip. The integrated circuitry is disposed within the circuit area. No active circuit is disposed within the peripheral area. A barrier is disposed within the peripheral area and surrounds the circuit area. The barrier includes a capacitor structure integrated therein.
摘要翻译: 集成电路包括芯片,该芯片包括由周边区域包围的电路区域,该周边区域延伸到芯片的边缘。 集成电路设置在电路区域内。 外围区域内没有设置有源电路。 屏障设置在外围区域内并且围绕电路区域。 屏障包括集成在其中的电容器结构。
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公开(公告)号:US20100022085A1
公开(公告)日:2010-01-28
申请号:US12572905
申请日:2009-10-02
申请人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
发明人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
IPC分类号: H01L21/768 , G06F17/50
CPC分类号: H01L24/05 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05095 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/20754 , H01L2924/30105 , H01L2924/00 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2224/05599
摘要: Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In some embodiments, the support structures include a plurality of support members that is formed in a substantially annular shape beneath a wire bond region. The central region inside the substantially annular shape of the plurality of support members may be used to route functional conductive lines for making electrical contact to active areas of the semiconductor device. Dummy support structures may optionally be formed between the functional conductive lines. The support structures may be formed in one or more conductive line layers and semiconductive material layers of a semiconductor device. In other embodiments, support members are not formed in an annular shape, and are formed in insulating layers that do not comprise low dielectric constant (k) materials.
摘要翻译: 公开了半导体器件的支撑结构及其制造方法。 在一些实施例中,支撑结构包括在线接合区域下方形成为大致环形的多个支撑构件。 多个支撑构件的大致环形形状内的中心区域可以用于路由功能导电线,用于与半导体器件的有源区电接触。 可选地,在功能导电线之间形成虚拟支撑结构。 支撑结构可以形成在半导体器件的一个或多个导电层和半导体材料层中。 在其它实施例中,支撑构件不形成为环形,并且形成为不包括低介电常数(k)材料的绝缘层。
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公开(公告)号:US20070102787A1
公开(公告)日:2007-05-10
申请号:US11268854
申请日:2005-11-08
申请人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
发明人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
IPC分类号: H01L29/00
CPC分类号: H01L23/5223 , H01L23/585 , H01L27/0805 , H01L28/87 , H01L2924/0002 , H01L2924/00
摘要: An integrated circuit comprises a chip including a circuit area surrounded by a peripheral area, the peripheral area extending to an edge of the chip. The integrated circuitry is disposed within the circuit area. No active circuit is disposed within the peripheral area. A barrier is disposed within the peripheral area and surrounds the circuit area. The barrier includes a capacitor structure integrated therein.
摘要翻译: 集成电路包括芯片,该芯片包括由周边区域包围的电路区域,该周边区域延伸到芯片的边缘。 集成电路设置在电路区域内。 外围区域内没有设置有源电路。 屏障设置在外围区域内并且围绕电路区域。 屏障包括集成在其中的电容器结构。
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公开(公告)号:US20070080464A1
公开(公告)日:2007-04-12
申请号:US11248554
申请日:2005-10-12
申请人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
发明人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
IPC分类号: H01L21/4763 , H01L23/48
CPC分类号: H01L24/05 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05095 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/20754 , H01L2924/30105 , H01L2924/00 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2224/05599
摘要: Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In some embodiments, the support structures include a plurality of support members that is formed in a substantially annular shape beneath a wire bond region. The central region inside the substantially annular shape of the plurality of support members may be used to route functional conductive lines for making electrical contact to active areas of the semiconductor device. Dummy support structures may optionally be formed between the functional conductive lines. The support structures may be formed in one or more conductive line layers and semiconductive material layers of a semiconductor device. In other embodiments, support members are not formed in an annular shape, and are formed in insulating layers that do not comprise low dielectric constant (k) materials.
摘要翻译: 公开了半导体器件的支撑结构及其制造方法。 在一些实施例中,支撑结构包括在线接合区域下方形成为大致环形的多个支撑构件。 多个支撑构件的大致环形形状内的中心区域可以用于路由功能导电线,用于与半导体器件的有源区电接触。 可选地,在功能导电线之间形成虚拟支撑结构。 支撑结构可以形成在半导体器件的一个或多个导电层和半导体材料层中。 在其它实施例中,支撑构件不形成为环形,并且形成为不包括低介电常数(k)材料的绝缘层。
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公开(公告)号:US07858448B2
公开(公告)日:2010-12-28
申请号:US12572905
申请日:2009-10-02
申请人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
发明人: Thomas Goebel , Erdem Kaltalioglu , Sun-Oo Kim
IPC分类号: H01L21/82
CPC分类号: H01L24/05 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05073 , H01L2224/05093 , H01L2224/05095 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/10329 , H01L2924/14 , H01L2924/19041 , H01L2924/20754 , H01L2924/30105 , H01L2924/00 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20755 , H01L2224/05599
摘要: Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In some embodiments, the support structures include a plurality of support members that is formed in a substantially annular shape beneath a wire bond region. The central region inside the substantially annular shape of the plurality of support members may be used to route functional conductive lines for making electrical contact to active areas of the semiconductor device. Dummy support structures may optionally be formed between the functional conductive lines. The support structures may be formed in one or more conductive line layers and semiconductive material layers of a semiconductor device. In other embodiments, support members are not formed in an annular shape, and are formed in insulating layers that do not comprise low dielectric constant (k) materials.
摘要翻译: 公开了半导体器件的支撑结构及其制造方法。 在一些实施例中,支撑结构包括在线接合区域下方形成为大致环形的多个支撑构件。 多个支撑构件的大致环形形状内的中心区域可以用于路由功能导电线,用于与半导体器件的有源区电接触。 可选地,在功能导电线之间形成虚拟支撑结构。 支撑结构可以形成在半导体器件的一个或多个导电层和半导体材料层中。 在其它实施例中,支撑构件不形成为环形,并且形成为不包括低介电常数(k)材料的绝缘层。
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公开(公告)号:US20090200675A1
公开(公告)日:2009-08-13
申请号:US12029127
申请日:2008-02-11
申请人: Thomas Goebel , Erdem Kaltalioglu , Markus Naujok
发明人: Thomas Goebel , Erdem Kaltalioglu , Markus Naujok
CPC分类号: H01L24/11 , H01L21/76885 , H01L24/10 , H01L24/13 , H01L2224/11 , H01L2224/11916 , H01L2224/13 , H01L2224/13099 , H01L2224/16 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/04941 , H01L2924/04953 , H01L2924/30105 , H01L2924/30107 , H01L2924/00
摘要: A structure and method of forming passivated copper chip pads is described. In various embodiments, the invention describes a substrate that includes active circuitry and metal levels disposed above the substrate. A passivation layer is disposed above a last level of the metal levels. A conductive liner is disposed in the sidewalls of an opening disposed in the passivation layer, wherein the conductive liner is also disposed over an exposed surface of the last level of the metal levels.
摘要翻译: 描述了形成钝化的铜芯片焊盘的结构和方法。 在各种实施例中,本发明描述了一种衬底,其包括设置在衬底上方的有源电路和金属电平。 钝化层设置在金属层的最后一层上方。 导电衬垫设置在设置在钝化层中的开口的侧壁中,其中导电衬垫也设置在金属水平的最后一级的暴露表面上。
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8.
公开(公告)号:US08752648B2
公开(公告)日:2014-06-17
申请号:US13883822
申请日:2012-10-26
CPC分类号: E21B41/0092 , E21B44/00 , G06K9/6292 , G06N3/08 , G06N99/005
摘要: Predicting a drill string stuck pipe event. At least some of the illustrative embodiments are methods including: receiving a plurality of drilling parameters from a drilling operation; applying the plurality of drilling parameters to an ensemble prediction model comprising at least three machine-learning algorithms operated in parallel, each machine-learning algorithm predicting a probability of occurrence of a future stuck pipe event based on at least one of the plurality of drilling parameters, the ensemble prediction model creates a combined probability based on the probability of occurrence of the future stuck pipe event of each machine-learning algorithm; and providing an indication of a likelihood of a future stuck pipe event to a drilling operator, the indication based on the combined probability.
摘要翻译: 预测钻柱卡住管道事件。 至少一些说明性实施例是一种方法,包括:从钻井操作接收多个钻孔参数; 将所述多个钻孔参数应用于包括并行操作的至少三个机器学习算法的整体预测模型,每个机器学习算法基于所述多个钻孔参数中的至少一个来预测未来卡箍管事件的发生概率 综合预测模型基于每个机器学习算法的未来卡通管道事件的发生概率创建组合概率; 并且向钻井操作者提供未来卡住管道事件的可能性的指示,基于组合概率的指示。
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公开(公告)号:US08383659B2
公开(公告)日:2013-02-26
申请号:US13133678
申请日:2009-12-17
申请人: Steve Nanchen , Noëlle Gauvry , Thomas Goebel
发明人: Steve Nanchen , Noëlle Gauvry , Thomas Goebel
IPC分类号: A61K31/422 , C07D261/04
CPC分类号: A61K9/0056 , A01N43/80 , A01N43/84 , C07D277/56 , C07D333/38 , C07D409/04 , C07D413/04 , C07D413/14 , C07D417/04 , C07D417/14
摘要: Novel isoxazoline compounds and compositions containing the compounds are disclosed. The compounds have pesticidal properties and are suitable for use on non-human animals.
摘要翻译: 公开了新的异恶唑啉化合物和含有这些化合物的组合物。 该化合物具有农药性质,适用于非人类动物。
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公开(公告)号:US20120232138A1
公开(公告)日:2012-09-13
申请号:US13510006
申请日:2010-11-22
申请人: Thomas Goebel , Noëlle Gauvry , Heinz Sager
发明人: Thomas Goebel , Noëlle Gauvry , Heinz Sager
IPC分类号: A61K31/277 , A01P7/02 , A01N37/34 , A01P7/04 , C07C255/60 , A61P33/00
CPC分类号: C07C255/54 , A01N37/46 , A01N47/02 , C07C317/44 , C07C323/62
摘要: Novel amidoacetonitrile compounds and compositions containing the compounds are disclosed. The compounds have pesticidal properties and are suitable for controlling endoparasites on warm-blooded animals.
摘要翻译: 公开了新型酰胺乙腈化合物和含有这些化合物的组合物。 该化合物具有杀虫特性,适用于控制温血动物的内寄生虫。
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