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    Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
    1.
    发明授权
    Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same 失效
    用于化学气相沉积的前体组合物和包含其的配体交换金属 - 有机前体溶液

    公开(公告)号：US5820664A

    公开(公告)日：1998-10-13

    申请号：US414504

    申请日：1995-03-31

    申请人： Robin A. Gardiner ,  Peter S. Kirlin ,  Thomas H. Baum ,  Douglas Gordon ,  Timothy E. Glassman ,  Sofia Pombrik ,  Brian A. Vaartstra

    发明人： Robin A. Gardiner ,  Peter S. Kirlin ,  Thomas H. Baum ,  Douglas Gordon ,  Timothy E. Glassman ,  Sofia Pombrik ,  Brian A. Vaartstra

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  G02B6/036 ,  H01L39/24 ,  C09K3/00

    CPC分类号： H01L39/2441 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45561 ,  Y10S423/14

    摘要： A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of: .beta.-diketonates, .beta.-ketoiminates, .beta.-diiminates, C.sub.1 -C.sub.8 alkyl, C.sub.2 -C.sub.10 alkenyl, C.sub.2 -C.sub.15 cycloalkenyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons. Solutions of the invention having two or more metal coordination complexes are resistant to detrimental ligand exchange reactions which adversely affect the stability and/or volatilizability of the metal complex for CVD applications.

    摘要翻译： 一种金属源试剂液体溶液，其包含：（i）至少一种金属配位络合物，其包含与稳定络合物中的至少一种配位体配位结合的金属，其中所述配体选自β-二酮化合物， β-酮基，β-二亚胺，C 1 -C 8烷基，C 2 -C 10烯基，C 2 -C 15环烯基，C 6 -C 10芳基，C 1 -C 8烷氧基及其氟化衍生物; 和（ii）金属配位络合物的溶剂。 该溶液有效地用于金属配位络合物如Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd的金属化学气相沉积 ，Cr，W，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi ，和/或Yb。 溶剂可以包括甘醇二甲醚溶剂，链烷醇，有机醚，脂族烃和/或芳族烃。 具有两种或更多种金属配位络合物的本发明的溶液对有害的配体交换反应具有抗性，这对于CVD应用的金属络合物的稳定性和/或挥发性是不利的。

    Platinum source compositions for chemical vapor deposition of platinum
    3.
    发明授权
    Platinum source compositions for chemical vapor deposition of platinum 失效
    用于铂化学气相沉积的铂源组合物

    公开(公告)号：US6162712A

    公开(公告)日：2000-12-19

    申请号：US008705

    申请日：1998-01-16

    申请人： Thomas H. Baum ,  Peter S. Kirlin ,  Sofia Pombrik

    发明人： Thomas H. Baum ,  Peter S. Kirlin ,  Sofia Pombrik

    IPC分类号： C07C49/12 ,  C07C49/167 ,  C07C49/92 ,  C07F15/00 ,  C07F17/02 ,  C23C14/26 ,  C23C16/18 ,  G06F12/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/44

    CPC分类号： C23C16/18 ,  C07C49/92 ,  C07F17/02 ,  H01L28/65

    摘要： A platinum source reagent liquid solution, comprising:(i) at least one platinum source compound selected from the group consisting of compounds of the formulae:(A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and(B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and(ii) a solvent medium therefor.The platinum source reagent liquid solutions of the invention are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.

    摘要翻译： 一种铂源试剂液体溶液，其包含：（i）至少一种铂源化合物，其选自下式的化合物：（A）RCpPt（IV）R'3化合物，其具有下式：其中：R选自 由氢，甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基组成的组; 并且每个R'独立地选自甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 和（B）下式的Pt（β-二酮化合物）2：其中：每个R“独立地选自甲基，乙基，正丙基，异丙基，正丁基，异丁基，叔丁基 - 丁基，三氟甲基，全氟乙基和全氟正丙基，和（ⅱ）其溶剂介质。 本发明的铂源试剂液体溶液容易地用于包括用于挥发源试剂液体溶液并将所得蒸气输送到化学气相沉积反应器的液体输送装置的化学气相沉积工艺系统中，以将铂沉积在安装的基板上 在CVD反应器中。

    Platinum source compositions for chemical vapor deposition of platinum
    5.
    发明授权
    Platinum source compositions for chemical vapor deposition of platinum 失效
    用于铂化学气相沉积的铂源组合物

    公开(公告)号：US5783716A

    公开(公告)日：1998-07-21

    申请号：US673372

    申请日：1996-06-28

    申请人： Thomas H. Baum ,  Peter S. Kirlin ,  Sofia Pombrik

    发明人： Thomas H. Baum ,  Peter S. Kirlin ,  Sofia Pombrik

    IPC分类号： C07C49/12 ,  C07C49/167 ,  C07C49/92 ,  C07F15/00 ,  C07F17/02 ,  C23C14/26 ,  C23C16/18 ,  G06F12/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

    CPC分类号： C23C16/18 ,  C07C49/92 ,  C07F17/02 ,  H01L28/65

    摘要： A platinum source reagent liquid solution, comprising: (i) at least one platinum source compound selected from the group consisting of compounds of the formulae: (A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and (B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and (ii) a solvent medium therefor. The platinum source reagent liquid solutions of the invention are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.

    摘要翻译： 一种铂源试剂液体溶液，其包含：（i）至少一种铂源化合物，其选自下式的化合物：（A）RCpPt（IV）R'3化合物，其具有下式：其中： R选自氢，甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 并且每个R'独立地选自甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 和（B）下式的Pt（β-二酮化合物）2：其中：每个R“独立地选自甲基，乙基，正丙基，异丙基，正丁基，异丙基， 丁基，叔丁基，三氟甲基，全氟乙基和全氟正丙基，和（ii）其溶剂介质。 本发明的铂源试剂液体溶液容易地用于包括用于挥发源试剂液体溶液并将所得蒸气输送到化学气相沉积反应器的液体输送装置的化学气相沉积工艺系统中，以将铂沉积在安装的基板上 在CVD反应器中。

    Growth of BaSrTiO.sub.3 using polyamine-based precursors
    6.
    发明授权
    Growth of BaSrTiO.sub.3 using polyamine-based precursors 失效
    使用多胺类前体生长BaSrTiO3

    公开(公告)号：US5919522A

    公开(公告)日：1999-07-06

    申请号：US835768

    申请日：1997-04-08

    申请人： Thomas H. Baum ,  Gregory T. Stauf ,  Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner ,  Gautam Bhandari ,  Brian A. Vaartstra

    发明人： Thomas H. Baum ,  Gregory T. Stauf ,  Peter S. Kirlin ,  Duncan W. Brown ,  Robin A. Gardiner ,  Gautam Bhandari ,  Brian A. Vaartstra

    IPC分类号： C07C49/12 ,  C07C211/14 ,  C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  C23C16/00

    CPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/409 ,  C23C16/4481

    摘要： A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.

    摘要翻译： 一种在化学气相沉积区中在衬底上形成BaSrTiO3薄膜的方法，该方法通过包括蒸发器的液体输送装置将含金属膜的金属前体组合物输送到化学气相沉积区。 将液体前体材料供给到液体输送装置中以使其蒸发以产生气相金属前体组合物。 气相金属前体组合物流到化学气相沉积区，用于在基底上沉积金属以形成含金属膜。 液体前体材料包括金属有机多胺络合物，其用途允许在维持事件之间实现液体输送化学气相沉积工艺的持续操作，这是由于在多胺络合的前体的蒸发中实现的低分解水平。

    Isotropic dry cleaning process for noble metal integrated circuit structures
    7.
    发明授权
    Isotropic dry cleaning process for noble metal integrated circuit structures 失效
    贵金属集成电路结构各向同性干洗工艺

    公开(公告)号：US06709610B2

    公开(公告)日：2004-03-23

    申请号：US09768494

    申请日：2001-01-24

    申请人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter S. Kirlin ,  Thomas H. Baum

    发明人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter S. Kirlin ,  Thomas H. Baum

    IPC分类号： C23F130

    CPC分类号： H01L28/65 ,  C07F15/004 ,  C23C16/18 ,  C23C16/40 ,  C23F1/30 ,  C30B25/02 ,  C30B29/02 ,  C30B29/16 ,  H01L21/02071 ,  H01L21/32136 ,  H01L28/55 ,  Y10S438/906

    摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.

    摘要翻译： 通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。 该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。 在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。 或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。