SEMICONDUCTOR ARRANGEMENT INCLUDING A LOAD TRANSISTOR AND SENSE TRANSISTOR
    6.
    发明申请
    SEMICONDUCTOR ARRANGEMENT INCLUDING A LOAD TRANSISTOR AND SENSE TRANSISTOR 有权
    半导体器件包括负载晶体管和感测晶体管

    公开(公告)号:US20110037126A1

    公开(公告)日:2011-02-17

    申请号:US12541635

    申请日:2009-08-14

    IPC分类号: H01L29/66 H01L21/44

    摘要: A semiconductor arrangement including a load transistor and a sense transistor that are integrated in a semiconductor body. One embodiment provides a number of transistor cells integrated in the semiconductor body, each transistor cell including a first active transistor region. A number of first contact electrodes, each of the contact electrodes contacting the first active transistor regions through contact plugs. A second contact electrode contacts a first group of the first contact electrodes, but not contacting a second group of the first contact electrodes. The transistor cells being contacted by first contact electrodes of the first group form a load transistor, with the second electrode forming a load terminal of the load transistor. The transistor cells being contacted by first contact electrodes of the second group form a sense transistor.

    摘要翻译: 包括集成在半导体本体中的负载晶体管和读出晶体管的半导体装置。 一个实施例提供集成在半导体本体中的多个晶体管单元,每个晶体管单元包括第一有源晶体管区域。 多个第一接触电极,每个接触电极通过接触插塞接触第一有源晶体管区域。 第二接触电极接触第一组第一接触电极,但不接触第二组第一接触电极。 与第一组的第一接触电极接触的晶体管单元形成负载晶体管,第二电极形成负载晶体管的负载端子。 与第二组的第一接触电极接触的晶体管单元形成感测晶体管。

    Semiconductor arrangement including a load transistor and sense transistor
    7.
    发明授权
    Semiconductor arrangement including a load transistor and sense transistor 有权
    半导体装置包括负载晶体管和检测晶体管

    公开(公告)号:US08097918B2

    公开(公告)日:2012-01-17

    申请号:US12541635

    申请日:2009-08-14

    IPC分类号: H01L29/78

    摘要: A semiconductor arrangement including a load transistor and a sense transistor that are integrated in a semiconductor body. One embodiment provides a number of transistor cells integrated in the semiconductor body, each transistor cell including a first active transistor region. A number of first contact electrodes, each of the contact electrodes contacting the first active transistor regions through contact plugs. A second contact electrode contacts a first group of the first contact electrodes, but not contacting a second group of the first contact electrodes. The transistor cells being contacted by first contact electrodes of the first group form a load transistor, with the second electrode forming a load terminal of the load transistor. The transistor cells being contacted by first contact electrodes of the second group form a sense transistor.

    摘要翻译: 包括集成在半导体本体中的负载晶体管和读出晶体管的半导体装置。 一个实施例提供集成在半导体本体中的多个晶体管单元,每个晶体管单元包括第一有源晶体管区域。 多个第一接触电极,每个接触电极通过接触插塞接触第一有源晶体管区域。 第二接触电极接触第一组第一接触电极,但不接触第二组第一接触电极。 与第一组的第一接触电极接触的晶体管单元形成负载晶体管,第二电极形成负载晶体管的负载端子。 与第二组的第一接触电极接触的晶体管单元形成感测晶体管。