公开(公告)号：US5276575A

公开(公告)日：1994-01-04

申请号：US845140

申请日：1992-03-03

申请人： Tomio Kobayashi ,  Heikichi Sato ,  Hideaki Ojima ,  Akira Urai ,  Akira Murakami ,  Yoshito Ikeda ,  Mitsuaki Yokomizo ,  Toshiyuki Okada

发明人： Tomio Kobayashi ,  Heikichi Sato ,  Hideaki Ojima ,  Akira Urai ,  Akira Murakami ,  Yoshito Ikeda ,  Mitsuaki Yokomizo ,  Toshiyuki Okada

IPC分类号： G11B5/23 ,  G11B5/187 ,  G11B5/43 ,  G11B5/47

CPC分类号： G11B5/1871

摘要： Each of a pair of magnetic core halves includes a substrate and a thin magnetic metal film formed on the substrate. The substrate is notched with a winding groove. The pair of the magnetic core halves are integrally bonded to each other so that a gap filling film is formed between the facing surfaces of the thin magnetic metal films. The zero depth position of the magnetic gap which is determined by the length of the facing thin magnetic metal films is offset to a magnetic recording medium sliding surface of the magnetic head from the notching start position of the winding groove on the side of the magnetic gap. Hence, the shape of the thin magnetic metal film exposed on the magnetic recording medium sliding surface is maintained constant from the initial position to the depth zero position.

摘要翻译： 一对磁芯半部中的每一个包括形成在基板上的基板和薄磁性金属膜。 基板用卷绕槽切口。 一对磁芯半部彼此一体地结合，从而在薄磁性金属膜的相对表面之间形成间隙填充膜。 由相对的薄磁性金属膜的长度确定的磁隙的零深度位置从磁隙侧的卷绕槽的开槽起始位置偏移到磁头的磁记录介质滑动面 。 因此，暴露在磁记录介质滑动表面上的薄磁性金属膜的形状从初始位置到深度零位置保持恒定。

公开(公告)号：US4953050A

公开(公告)日：1990-08-28

申请号：US464678

申请日：1990-01-10

申请人： Tatsuo Kumura ,  Heikichi Sato ,  Yoshiyuki Kunito ,  Yoshito Ikeda ,  Etsuo Izu ,  Masatoshi Hayakawa

发明人： Tatsuo Kumura ,  Heikichi Sato ,  Yoshiyuki Kunito ,  Yoshito Ikeda ,  Etsuo Izu ,  Masatoshi Hayakawa

IPC分类号： G11B5/235 ,  G11B5/127 ,  G11B5/187 ,  G11B5/23 ,  H01F10/14

CPC分类号： G11B5/187

摘要： A magnetic head is disclosed which is formed by magnetic core halves constituted of an oxide magnetic material and soft magnetic thin films, wherein the boundary surfaces between the thin films and the oxide magnetic material runs substantially parallel to the gap surface in the vicinity of the magnetic gap. The soft magnetic thin films are soft magnetic thin films of the Fe-Ga-Si system consisting essentially of Fe, Ga and Si.

摘要翻译： 公开了一种由氧化物磁性材料和软磁性薄膜构成的磁芯半部形成的磁头，其中薄膜和氧化物磁性材料之间的边界面基本上平行于磁性附近的间隙表面 间隙。 软磁薄膜是由Fe，Ga和Si组成的Fe-Ga-Si系统的软磁薄膜。

公开(公告)号：US09252488B2

公开(公告)日：2016-02-02

申请号：US14008216

申请日：2012-03-23

申请人： Katsuhisa Orihara ,  Yoshito Ikeda ,  Norio Saito ,  Satoru Sugita

发明人： Katsuhisa Orihara ,  Yoshito Ikeda ,  Norio Saito ,  Satoru Sugita

IPC分类号： H01Q7/06 ,  H01Q1/24 ,  H01Q1/22 ,  G06K7/10

CPC分类号： H01Q7/06 ,  G06K7/10237 ,  H01Q1/2208 ,  H01Q1/243

摘要： The present invention provides an antenna apparatus which can realize favorable communication properties while achieving downsizing of a casing of an electronic device when incorporated in an electronic device. An antenna module (1a) which is incorporated in a mobile phone (130) and which is enabled to perform communication by receiving a magnetic field transmitted from a reader/writer (120) comprises an antenna coil (11a) which is wound in a clearance (132) between an end portion (133b) of a metallic plate (133a) opposing the reader/writer (120) within a casing (131) of the mobile phone (130) and an inner peripheral wall (131a) of the casing (131) so as not to surround an outer peripheral portion of the metallic plate (133a) and which is inductively coupled with the reader/writer (120).

摘要翻译： 本发明提供了一种天线装置，其能够实现良好的通信性能，同时在电子装置中结合时实现电子装置的壳体的小型化。 通过接收从读写器（120）发送的磁场，能够进行通信的天线模块（1a）包括：天线线圈（11a），其被卷绕在间隙 （130）的壳体（131）内的与读写器（120）相对的金属板（133a）的端部（133b）与壳体的内周壁（131a） 131），以便不围绕金属板（133a）的外周部分并且与读取器/写入器（120）感应耦合。

公开(公告)号：US08849195B2

公开(公告)日：2014-09-30

申请号：US13635997

申请日：2011-03-31

申请人： Katsuhisa Orihara ,  Yoshito Ikeda ,  Norio Saito ,  Satoru Sugita

发明人： Katsuhisa Orihara ,  Yoshito Ikeda ,  Norio Saito ,  Satoru Sugita

IPC分类号： H04B5/00 ,  H01Q1/22 ,  H01Q7/00 ,  H01Q1/24

CPC分类号： H01Q1/2208 ,  H01Q1/2225 ,  H01Q1/2266 ,  H01Q1/24 ,  H01Q1/243 ,  H01Q1/42 ,  H01Q7/00

摘要： The present invention provides a communication device that can reduce a housing of an electronic device in size and thickness when the communication device is built in the electronic device. The communication device includes: an antenna coil (11a) arranged on an outer peripheral portion (134) of a housing (131) surface facing a reader/writer (120) of a mobile phone (130); a magnetic sheet (13) that attracts a magnetic field transmitted from the reader/writer (120) to the antenna coil (11a); and a communication processing unit (12) that is driven by a current flowing in the antenna coil (11a) and performs communication with the reader/writer (120), wherein the magnetic sheet (13) is arranged on the reader/writer (120) side of the antenna coil (11a) at a center portion (132a), and the antenna coil (11a) is arranged on the reader/writer (120) side on an outer periphery (130d) side.

摘要翻译： 本发明提供一种通信装置，当通信装置内置在电子装置中时，可以减小电子装置的尺寸和厚度的外壳。 通信装置包括：天线线圈（11a），布置在面向移动电话（130）的读取器/写入器（120）的壳体（131）表面的外周部分（134）上; 吸引从读取器/写入器（120）发送到天线线圈（11a）的磁场的磁性片（13）; 以及由在天线线圈（11a）中流动的电流驱动并与读取器/写入器（120）进行通信的通信处理单元（12），其中磁片（13）布置在读取器/写入器（120） ）侧，天线线圈（11a）在中心部分（132a）处，天线线圈（11a）布置在外周（130d）侧的读/写器（120）侧。

公开(公告)号：US20130181805A1

公开(公告)日：2013-07-18

申请号：US13824860

申请日：2011-12-28

申请人： Norio Saito ,  Katsuhisa Orihara ,  Yoshito Ikeda ,  Satoru Sugita

发明人： Norio Saito ,  Katsuhisa Orihara ,  Yoshito Ikeda ,  Satoru Sugita

IPC分类号： H01F38/14 ,  H01F41/06

CPC分类号： H01F38/14 ,  H01F41/071 ,  H01Q1/2216 ,  H01Q1/243 ,  H01Q7/00 ,  H01Q7/08 ,  Y10T29/49018

摘要： A communication device that, when incorporated in an electronic device, can reduce the size and the thickness of a housing of the electronic device while maintaining communication characteristics. The communication device includes an antenna coil that is arranged on a peripheral part of a housing surface facing a reader-writer of a mobile phone, a magnetic sheet that attracts the magnetic filed transmitted from the reader-writer to the antenna coil, and a communication processing unit that is driven by a current flowing through the antenna coil and communicates with the reader-writer. The magnetic sheet is arranged to be closer to reader-writer than the antenna coil in the central part, and the antenna coil is arranged to be closer to the reader-writer on the outer periphery side, and at least a part of the conductive line of the antenna coil is superimposed in a direction orthogonal to a circuit board.

摘要翻译： 一种通信装置，当并入电子设备中时，可以在保持通信特性的同时减小电子设备的壳体的尺寸和厚度。 通信装置包括：天线线圈，其布置在面向移动电话的读写器的壳体表面的周边部分，吸引从读写器发送到天线线圈的磁场的磁性片，以及通信 处理单元，其由流过天线线圈的电流驱动，并与读写器通信。 磁片被布置成比中央部分的天线线圈更靠近读写器，并且天线线圈布置成在外周侧更靠近读写器，并且导线的至少一部分 的天线线圈与电路板正交的方向叠加。

公开(公告)号：US07332717B2

公开(公告)日：2008-02-19

申请号：US10580534

申请日：2005-09-15

申请人： Takahiko Murata ,  Takumi Yamaguchi ,  Shigetaka Kasuga ,  Shinji Yoshida ,  Yoshito Ikeda

发明人： Takahiko Murata ,  Takumi Yamaguchi ,  Shigetaka Kasuga ,  Shinji Yoshida ,  Yoshito Ikeda

IPC分类号： G01J5/00

CPC分类号： G01J5/24 ,  G01J1/46 ,  H04N5/33

摘要： An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. The intensity of infrared light is output as a potential difference between the reference potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the reference capacitor element and the detection potential which is brought to a potential by applying a predetermined voltage between the series capacitor element and the infrared-detecting capacitor element.

摘要翻译： 红外线传感器包括串联电容器元件和参考电容器元件，每个都具有预定的电容值; 其电容值根据入射到元件上的红外光的强度而变化的红外线检测电容器元件; 并且输出节点是串联电容器元件的第一端子，参考电容器元件的第一端子和红外线检测电容器元件的第一端子彼此连接的节点。 红外光的强度通过在串联电容器元件和参考电容器元件之间施加预定电压而被引入到电位的参考电位之间的电位差和通过施加预定的 串联电容器元件和红外线检测电容器元件之间的电压。

公开(公告)号：US07323376B2

公开(公告)日：2008-01-29

申请号：US10736605

申请日：2003-12-17

申请人： Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

发明人： Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

IPC分类号： H01L21/338

CPC分类号： H01L21/28581 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/66462

摘要： A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.

摘要翻译： 半导体器件具有形成在III族氮化物半导体层上的III族氮化物半导体层和栅电极。 栅极电极含有粘附增强元件。 在III族氮化物半导体层和栅电极之间插入热氧化绝缘膜。

公开(公告)号：US07307292B2

公开(公告)日：2007-12-11

申请号：US10456901

申请日：2003-06-09

申请人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

发明人： Katsunori Nishii ,  Kaoru Inoue ,  Toshinobu Matsuno ,  Yoshito Ikeda ,  Hiroyuki Masato

IPC分类号： H01L31/0336

CPC分类号： H01L29/66462 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/7783

摘要： An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.

摘要翻译： 绝缘栅半导体器件具有形成在衬底上的第一氮化物半导体层和通过氧化形成在第一氮化物半导体层上的第二氮化物半导体层而获得的绝缘氧化层。 在绝缘氧化层上形成栅电极。

公开(公告)号：US07078743B2

公开(公告)日：2006-07-18

申请号：US10834362

申请日：2004-04-29

申请人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

发明人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

IPC分类号： H01L31/0328

CPC分类号： H01L29/7787 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766

摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

摘要翻译： 半导体器件具有：形成在导电基板上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，由未掺杂的GaN和N型Al y Ga 1-y N制成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。 源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。

公开(公告)号：US20050189651A1

公开(公告)日：2005-09-01

申请号：US10625546

申请日：2003-07-24

申请人： Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

发明人： Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

IPC分类号： H01L21/285 ,  H01L23/48 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323

CPC分类号： H01L21/28575 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/32341

摘要： An object of the present invention is to reduce the resistance of an electrode of a Group III nitride semiconductor. A thin Si film and a thin Ti film are formed selectively in a contact formation region on a surface of an AlGaN layer as a Group III nitride semiconductor layer formed on a substrate, and the resulting substrate is heat-treated at a high temperature. By the heat treatment, Si is diffused into the AlGaN layer in the ohmic contact formation region at a concentration of about 1020 cm3. Further, an electron density sufficiently high to provide an ohmic characteristic through a reaction between Si and Ti is provided. Thus, a low resistance TiSi2 portion resulting from the reaction between Si and Ti, a TiN portion resulting from a reaction between Ti and AlGaN and a Group III metal portion of Ga and Al devoid of nitrogen are formed in the contact formation region thereby to provide a low resistance electrode film mainly comprising TiSi2.

摘要翻译： 本发明的目的是降低III族氮化物半导体的电极的电阻。 在AlGaN层的表面上的接触形成区域中选择性地形成薄的Si膜和薄的Ti膜，作为形成在衬底上的III族氮化物半导体层，并将所得到的衬底在高温下进行热处理。 通过热处理，Si在欧姆接触形成区域中扩散到约10 20 cm 3的浓度的AlGaN层中。 此外，提供足够高的电子密度以通过Si和Ti之间的反应提供欧姆特性。 因此，形成由Si和Ti之间的反应产生的低电阻TiSi 2 H 2部分，由Ti和AlGaN之间的反应导致的TiN部分和缺少氮的Ga和Al的III族金属部分 在接触形成区域中，由此提供主要包含TiSi 2 N的低电阻电极膜。