公开(公告)号：US20120292632A1

公开(公告)日：2012-11-22

申请号：US13222561

申请日：2011-08-31

申请人： Tomonari SHIODA ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/32 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

摘要翻译： 根据一个实施例，氮化物半导体器件包括基底层和功能层。 基底层形成在形成在硅衬底上的含Al氮化物半导体层上。 基础层的厚度不小于1微米，包括GaN。 功能层设置在基础层上。 功能层包括第一半导体层。 第一半导体层的杂质浓度高于基础层中的杂质浓度，并且包括第一导电类型的GaN。

公开(公告)号：US20120295377A1

公开(公告)日：2012-11-22

申请号：US13222238

申请日：2011-08-31

申请人： Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

发明人： Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC分类号： H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/22

摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

公开(公告)号：US20120223323A1

公开(公告)日：2012-09-06

申请号：US13214626

申请日：2011-08-22

申请人： Tomonari SHIODA ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/205 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/205 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a wafer includes a substrate, a base layer, a foundation layer, an intermediate layer and a functional unit. The substrate has a major surface. The base layer is provided on the major surface and includes a silicon compound. The foundation layer is provided on the base layer and includes GaN. The intermediate layer is provided on the foundation layer and includes a layer including AlN. The functional unit is provided on the intermediate layer and includes a nitride semiconductor. The foundation layer has a first region on a side of the base layer, and a second region on a side of the intermediate layer. A concentration of silicon atoms in the first region is higher than a concentration of silicon atoms in the second region. The foundation layer has a plurality of voids provided in the first region.

摘要翻译： 根据一个实施例，晶片包括基板，基底层，基础层，中间层和功能单元。 基板具有主表面。 基层设置在主表面上并且包括硅化合物。 基底层设置在基底层上并且包括GaN。 中间层设置在基础层上，并且包括包含AlN的层。 功能单元设置在中间层上并且包括氮化物半导体。 基底层在基层的一侧具有第一区域，在中间层的一侧具有第二区域。 第一区域中硅原子的浓度高于第二区域中硅原子的浓度。 基础层具有设置在第一区域中的多个空隙。

公开(公告)号：US20120217471A1

公开(公告)日：2012-08-30

申请号：US13213373

申请日：2011-08-19

申请人： Tomonari SHIODA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

发明人： Tomonari SHIODA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/04 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.

摘要翻译： 根据一个实施例，一种半导体发光器件包括n型半导体层，p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。 发光部分设置在n型和p型半导体层之间，并且包括n侧阻挡层和第一发光层。 第一发光层包括第一阻挡层，第一阱层和第一AlGaN层。 第一阻挡层设置在n侧势垒层和p型半导体层之间。 第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。 第一AlGaN层设置在第一阱层和第一势垒层之间。 从发光部发出的光的峰值波长λp长于515nm。

公开(公告)号：US20120146045A1

公开(公告)日：2012-06-14

申请号：US13212539

申请日：2011-08-18

申请人： Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

发明人： Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

IPC分类号： H01L33/32

CPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction.

摘要翻译： 根据一个实施例，半导体发光器件包括发光层，透光层和第一半导体层。 透光层相对于从发光层发射的光是可透射的。 第一半导体层与发光层和透光层之间的透光层接触。 透光层的热膨胀系数大于透光层的热膨胀系数，其晶格常数小于有源层的晶格常数，并且在面内方向具有拉伸应力。

公开(公告)号：US20120138890A1

公开(公告)日：2012-06-07

申请号：US13213821

申请日：2011-08-19

申请人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/06

CPC分类号： H01L33/40 ,  H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。 第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。 阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。

公开(公告)号：US20110197808A1

公开(公告)日：2011-08-18

申请号：US12874594

申请日：2010-09-02

申请人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： C30B25/10

CPC分类号： H01L21/02636 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0254 ,  H01L33/007

摘要： Certain embodiments provide a crystal growth method for nitride semiconductors, including: growing a first semiconductor layer containing InxGa1-xN (0

摘要翻译： 某些实施例提供了一种用于氮化物半导体的晶体生长方法，其包括：在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

公开(公告)号：US20120032209A1

公开(公告)日：2012-02-09

申请号：US13032934

申请日：2011-02-23

申请人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/32

CPC分类号： H01L33/06 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/04 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括：半导体层; 多层结构体; 和发光部分。 多层结构体设置在半导体层之间，并且包括第一层和包括In的第二层。 发光部分与多层结构体和p型半导体层之间的多层结构体接触，并且包括阻挡层和包括In的阱层，III族元素中的In组成比高于In组成比中的In组成比 第三组元素在第二层。 多层结构体的平均晶格常数大于n型半导体层的平均晶格常数。 多层结构体的平均晶格常数与发光部的平均晶格常数之差小于多层结构体与n型半导体层的平均晶格常数之差。