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公开(公告)号：US06078072A
公开(公告)日：2000-06-20
申请号：US73834
申请日：1998-05-06
IPC分类号： H01L21/02 , H01L21/8242 , H01L29/76 , H01L27/108 , H01L29/94 , H01L31/113
CPC分类号： H01L27/10852 , H01L28/60 , H01L28/55
摘要： A lower electrode layer 1 of a capacitor 10 is formed by sputtering performed at a temperature lower than 450.degree. C. in an atmosphere containing oxygen, and thereby the lower electrode layer 1 thus formed contains oxygen. Thereby, a method of manufacturing a semiconductor device having the capacitor can suppress current leak, and can prevent peeling of an electrode.
摘要翻译： 电容器10的下电极层1通过在低于450℃的温度下在含氧气氛中进行溅射而形成，由此形成的下电极层1含有氧。 因此，制造具有电容器的半导体器件的方法可以抑制电流泄漏，并且可以防止电极的剥离。
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2.发明授权公开(公告)号：US06746876B2
公开(公告)日：2004-06-08
申请号：US10310765
申请日：2002-12-06
IPC分类号： H01L218242
摘要： A method for manufacturing a capacitor is provided which can form a lower electrode having a high aspect ratio without suffering deterioration of the capacitor electric characteristics even when a platinum-group metal is adopted as the material of the lower electrode and a metal oxide having a high dielectric constant is adopted as the material of the dielectric film. Holes (8) that reach contact plugs (2) are formed in an insulating film (7). Then a dielectric film (9) is formed on the surfaces of the holes (8). Next the dielectric film (9) on the bottoms of the holes (8) are etched away to form holes (18) reaching the contact plugs (2). Lower electrodes (11) are then formed to fill the holes (8) and (18).
摘要翻译： 提供了一种用于制造电容器的方法，即使当采用铂族金属作为下电极的材料时，也可形成具有高纵横比的下电极，而不会降低电容器的电特性，并且具有高的金属氧化物 采用介电常数作为电介质膜的材料。 到达接触塞（2）的孔（8）形成在绝缘膜（7）中。 然后在孔（8）的表面上形成介电膜（9）。 接下来，蚀刻掉孔（8）的底部上的电介质膜（9），以形成到达接触塞（2）的孔（18）。 然后形成下电极（11）以填充孔（8）和（18）。
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公开(公告)号：US06278150B1
公开(公告)日：2001-08-21
申请号：US08804530
申请日：1997-02-21
IPC分类号： H01L27108
CPC分类号： H01L21/76856 , H01L21/76841 , H01L21/76843 , H01L21/7685 , H01L27/10882 , H01L27/10894 , H01L2221/1078
摘要： A conductive layer connecting structure has a barrier layer preventing mutual diffusion between silicon and platinum group elements even when they are heated to a high temperature. The conductive layer connecting structure includes a plug containing doped polycrystalline silicon, a barrier layer formed on the plug and containing titanium, silicon and nitrogen, and a lower electrode layer formed on the barrier layer and containing platinum.
摘要翻译： 导电层连接结构具有防止硅和铂族元素之间的相互扩散的阻挡层，即使它们被加热到高温。 导电层连接结构包括含有掺杂多晶硅的插塞，形成在插塞上并包含钛，硅和氮的阻挡层，以及形成在阻挡层上并含有铂的下电极层。
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公开(公告)号：US08148248B2
公开(公告)日：2012-04-03
申请号：US13053733
申请日：2011-03-22
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L23/485 , H01L21/28518 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first and second impurity diffusion layers formed in the main surface of the semiconductor substrate, a metal silicide formed over the second impurity diffusion layer, and a silicon nitride film and a first interlayer insulation film sequentially stacked over the metal silicide. In the semiconductor device, a contact hole penetrating through the silicon nitride film and the first interlayer insulation film, and reaching the surface of the metal silicide is formed. The thickness of a portion of the metal silicide situated immediately under the contact hole is smaller than the thickness of a portion of the metal silicide situated around the contact hole.
摘要翻译： 提供了具有金属硅化物层的半导体器件，其可以抑制器件的故障和功率消耗的增加。 半导体器件具有包含硅并具有主表面的半导体衬底，形成在半导体衬底的主表面中的第一和第二杂质扩散层，形成在第二杂质扩散层上的金属硅化物，以及氮化硅膜和第一 层间绝缘膜依次层叠在金属硅化物上。 在半导体器件中，形成穿过氮化硅膜和第一层间绝缘膜并到达金属硅化物表面的接触孔。 位于接触孔正下方的金属硅化物的一部分的厚度小于位于接触孔周围的金属硅化物的一部分的厚度。
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5.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLANTATION BEFORE SILICIDE PROCESS 有权制造半导体器件的方法在硅化工艺之前进行离子植入公开(公告)号：US20070077736A1
公开(公告)日：2007-04-05
申请号：US11537208
申请日：2006-09-29
IPC分类号： H01L21/04
CPC分类号： H01L21/823814 , H01L21/26506 , H01L21/823835 , H01L21/823864 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： An N-type source region and an N-type drain region of N-channel type MISFETs are implanted with ions (containing at least one of F, Si, C, Ge, Ne, Ar and Kr) with P-channel type MISFETs being covered by a mask layer. Then, each gate electrode, source region and drain region of the N- and P-channel type MISFETs are subjected to silicidation (containing at least one of Ni, Ti, Co, Pd, Pt and Er). This can suppress a drain-to-body off-leakage current (substrate leakage current) in the N-channel type MISFETs without degrading the drain-to-body off-leakage current in the P-channel type MISFETs.
摘要翻译： 离子（含有F，Si，C，Ge，Ne，Ar和Kr中的至少一个）注入N沟道型MISFET的N型源极区域和N型漏极区域，P沟道型MISFET为 被掩模层覆盖。 然后，对N沟道型MISFET和P沟道型MISFET的各栅电极，源极区和漏极区进行硅化（含有Ni，Ti，Co，Pd，Pt和Er中的至少一种）。 这可以抑制N沟道型MISFET中的漏 - 漏泄漏电流（衬底泄漏电流），而不会降低P沟道型MISFET中的漏 - 漏泄漏电流。
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6.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CARRYING OUT ION IMPLANTATION BEFORE SILICIDE PROCESS 有权制造半导体器件的方法在硅化工艺之前进行离子植入公开(公告)号：US20100171183A1
公开(公告)日：2010-07-08
申请号：US12727334
申请日：2010-03-19
IPC分类号： H01L27/092
CPC分类号： H01L21/823814 , H01L21/26506 , H01L21/823835 , H01L21/823864 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： An N-type source region and an N-type drain region of N-channel type MISFETs are implanted with ions (containing at least one of F, Si, C, Ge, Ne, Ar and Kr) with P-channel type MISFETs being covered by a mask layer. Then, each gate electrode, source region and drain region of the N- and P-channel type MISFETs are subjected to silicidation (containing at least one of Ni, Ti, Co, Pd, Pt and Er). This can suppress a drain-to-body off-leakage current (substrate leakage current) in the N-channel type MISFETs without degrading the drain-to-body off-leakage current in the P-channel type MISFETs.
摘要翻译： 离子（含有F，Si，C，Ge，Ne，Ar和Kr中的至少一个）注入N沟道型MISFET的N型源极区域和N型漏极区域，P沟道型MISFET为 被掩模层覆盖。 然后，对N沟道型MISFET和P沟道型MISFET的各栅电极，源极区和漏极区进行硅化（含有Ni，Ti，Co，Pd，Pt和Er中的至少一种）。 这可以抑制N沟道型MISFET中的漏 - 漏泄漏电流（衬底泄漏电流），而不会降低P沟道型MISFET中的漏 - 漏泄漏电流。
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公开(公告)号：US20080121950A1
公开(公告)日：2008-05-29
申请号：US11771340
申请日：2007-06-29
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/66575 , H01L29/7833 , H01L29/7848
摘要： Even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is realized.The channel length direction of n channel MISFET where the silicide region of nickel or a nickel alloy was formed on the source and the drain is arranged so that it may become parallel to the crystal orientation of a semiconductor substrate. Since it is hard to extend the silicide region of nickel or a nickel alloy in the direction of crystal orientation , even if it is a case where the silicide region of nickel or a nickel alloy is formed in the source and drain of n channel MISFET, the semiconductor device in which OFF leakage current does not increase easily is obtained.
摘要翻译： 即使是在n沟道MISFET的源极和漏极中形成镍或镍合金的硅化物区域的情况，也可以实现OFF泄漏电流容易增加的半导体器件。 在源极和漏极上形成镍或镍合金的硅化物区域的n沟道MISFET的沟道长度方向被布置成使其可以平行于半导体衬底的晶体取向<100>。 由于难以在晶体取向<100>的方向上延伸镍或镍合金的硅化物区域，所以即使在镍或镍合金的硅化物区域形成在n的源极和漏极中的情况 通道MISFET，可以容易地提高OFF漏电流的半导体装置。
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公开(公告)号：US5753527A
公开(公告)日：1998-05-19
申请号：US613555
申请日：1996-03-11
IPC分类号： H01L27/10 , H01L27/108 , H01L21/70
CPC分类号： H01L27/10808
摘要： A first interlayer insulating film having a second contact hole is formed on a main surface of a semiconductor substrate 1 in a peripheral circuitry. A second plug electrode of the same material as a first plug electrode in a memory cell array is formed in the second contact hole. A pad layer is formed over the second plug electrode and a top surface of the first interlayer insulating film. The pad layer and a capacitor lower electrode are made of the same material. The pad layer is covered with the second interlayer insulating film. A third contact hole is formed at a portion of the second interlayer insulating film located above the pad layer. A first aluminum interconnection layer is formed in the third contact hole. Thereby, a contact can be formed easily between the interconnection layer and the main surface of the semiconductor substrate in the peripheral circuitry of a DRAM, and a manufacturing process can be simplified.
摘要翻译： 具有第二接触孔的第一层间绝缘膜形成在外围电路中的半导体衬底1的主表面上。 在第二接触孔中形成有与存储单元阵列中的第一插头电极相同材料的第二插头电极。 在第二插头电极和第一层间绝缘膜的顶表面上形成衬垫层。 焊盘层和电容器下电极由相同的材料制成。 衬垫层被第二层间绝缘膜覆盖。 在位于焊盘层上方的第二层间绝缘膜的一部分处形成第三接触孔。 在第三接触孔中形成第一铝互连层。 因此，可以在DRAM的外围电路中的互连层和半导体衬底的主表面之间容易地形成接触，并且可以简化制造工艺。
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9.发明授权Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer 失效在绝缘层中使用钛酸钛酸锂和钛酸钡铁电体的电子器件
公开(公告)号：US5572052A
公开(公告)日：1996-11-05
申请号：US374890
申请日：1995-01-19
CPC分类号： H01L27/11502 , H01L29/78391 , H01L29/92 , H01L29/94
摘要： In an electronic device using lead zirconate titanate (PZT) or lanthanum lead zirconate titanate (PLZT) as the main insulating material, a PZT film or a PLZT film is formed on a sub-insulating layer consisting essentially of lead titanate, lanthanum lead titanate, barium titanate, strontium titanate, barium strontium titanate, lead zirconate, or lanthanum lead zirconate. In an MIS structure, a semiconductor, the sub-insulating layer, the PZT film and metal are deposited in order. In a capacitor, the sub-insulating layer and the PZT film are sandwiched between a pair of electrodes. The sub-insulating layer improves crystallinity of PZT or PLZT, and the dielectric constant. An oxide of Pb, La, Zr or Ti can be added as the sub-insulating layer in order to further suppress current leakage.
摘要翻译： 在使用锆钛酸铅（PZT）或锆钛酸镧铅（PLZT）作为主要绝缘材料的电子器件中，在主要由钛酸铅，钛酸镧铅，钛酸铅等构成的基础绝缘层上形成PZT膜或PLZT膜， 钛酸钡，钛酸锶，钛酸锶钡，锆酸铅或锆酸镧铅。 在MIS结构中，依次沉积半导体，次绝缘层，PZT膜和金属。 在电容器中，副绝缘层和PZT膜夹在一对电极之间。 亚绝缘层提高了PZT或PLZT的结晶度和介电常数。 可以添加Pb，La，Zr或Ti的氧化物作为副绝缘层，以进一步抑制电流泄漏。
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10.发明授权Semiconductor device with high dielectric capacitor having sidewall spacers 失效具有高介电电容器的半导体器件具有侧壁间隔物
公开(公告)号：US5442213A
公开(公告)日：1995-08-15
申请号：US255854
申请日：1994-06-07
IPC分类号： H01L21/28 , H01L21/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L23/522 , H01L27/04 , H01L27/105 , G11C11/24
CPC分类号： H01L27/10852 , H01L21/3205 , H01L28/40 , H01L28/55 , Y10S257/915 , Y10S438/978
摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
摘要翻译： 根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从 层间绝缘膜的顶面角到掩埋导电层的表面。 因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。
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