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1.发明申请MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY 审中-公开制造半导体器件的制造方法及其制造的半导体器件公开(公告)号：US20080179751A1
公开(公告)日：2008-07-31
申请号：US12017929
申请日：2008-01-22
申请人： Tomoyuki Kitani , Tomohiro Iguchi , Masako Hirahara , Hideo Nishiuchi , Akira Tojo , Taizo Tomioka
发明人： Tomoyuki Kitani , Tomohiro Iguchi , Masako Hirahara , Hideo Nishiuchi , Akira Tojo , Taizo Tomioka
IPC分类号： H01L23/29 , H01L21/304
CPC分类号： H01L21/78 , H01L23/29 , H01L23/291 , H01L23/293 , H01L23/298 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/19043 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A manufacturing method for semiconductor devices includes a process of forming a conductive layer 4 on the other principle surface of a semiconductor wafer 10 having circuit elements 2 formed in one principle surface of the semiconductor wafer, a process of forming a protecting layer 5 on at least a part of the conductive layer, the protecting layer 5 being made from material having hard-to-shave characteristics in comparison with the conductive layer and a process of cutting the semiconductor wafer 10 into pieces with respect to each of the semiconductor devices 1. By the manufacturing method, each semiconductor device 1 is provided with a semiconductor substrate 3 having the circuit elements 2 formed in one principle surface of the semiconductor substrate 3, the conductive layer 4 formed on the other principle surface of the semiconductor substrate 3 and the protecting layer 5 formed on the conductive layer 4 in lamination to have hard-to-shave characteristics in comparison with the conductive layer 4.
摘要翻译： 半导体器件的制造方法包括在半导体晶片10的另一个主表面上形成导电层4的工艺，该半导体晶片10具有形成在半导体晶片的一个主表面中的电路元件2，至少形成保护层5的工艺 导电层的一部分，保护层5由与导电层相比具有难以剃须特性的材料制成，以及将半导体晶片10相对于每个半导体器件1切割成片的工艺。 通过制造方法，每个半导体器件1设置有半导体衬底3，其具有形成在半导体衬底3的一个主表面中的电路元件2，形成在半导体衬底3的另一个主表面上的导电层4和保护 层5形成在导电层4上，与导电层4相比具有难剃刮特性。
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2.发明申请Method of manufacturing semiconductor wafer and method of manufacturing semiconductor device 失效半导体晶片的制造方法及半导体装置的制造方法公开(公告)号：US20060032834A1
公开(公告)日：2006-02-16
申请号：US11203097
申请日：2005-08-15
申请人： Tomohiro Iguchi , Kentaro Suga , Taizo Tomioka
发明人： Tomohiro Iguchi , Kentaro Suga , Taizo Tomioka
CPC分类号： H01L21/304 , H01L21/30604 , H01L24/75 , H01L24/81 , H01L2224/73204 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： According to a method of manufacturing a semiconductor wafer and a semiconductor device, a rear surface of the semiconductor wafer is ground, and is dry—or wet—etched so that rear surfaces of semiconductor chips on the segmented semiconductor wafer have substantially equal surface roughness. The semiconductor chips are bonded onto a lead frame via bumps using thermo-compression and ultrasonic vibrations.
摘要翻译： 根据制造半导体晶片和半导体器件的方法，对半导体晶片的后表面进行研磨，并进行干蚀刻或湿蚀刻，使得分割的半导体晶片上的半导体芯片的后表面具有基本上相等的表面粗糙度。 半导体芯片通过使用热压缩和超声波振动的凸块接合到引线框架上。
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3.发明授权Method of manufacturing semiconductor wafer and method of manufacturing semiconductor device 失效半导体晶片的制造方法及半导体装置的制造方法公开(公告)号：US07205239B2
公开(公告)日：2007-04-17
申请号：US11203097
申请日：2005-08-15
申请人： Tomohiro Iguchi , Kentaro Suga , Taizo Tomioka
发明人： Tomohiro Iguchi , Kentaro Suga , Taizo Tomioka
IPC分类号： H01L21/302
CPC分类号： H01L21/304 , H01L21/30604 , H01L24/75 , H01L24/81 , H01L2224/73204 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： According to a method of manufacturing a semiconductor wafer and a semiconductor device, a rear surface of the semiconductor wafer is ground, and is dry- or wet-etched so that rear surfaces of semiconductor chips on the segmented semiconductor wafer have substantially equal surface roughness. The semiconductor chips are bonded onto a lead frame via bumps using thermo-compression and ultrasonic vibrations.
摘要翻译： 根据制造半导体晶片和半导体器件的方法，对半导体晶片的后表面进行研磨，并进行干蚀刻或湿蚀刻，使得分割的半导体晶片上的半导体芯片的后表面具有基本上相等的表面粗糙度。 半导体芯片通过使用热压缩和超声波振动的凸块接合到引线框架上。
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公开(公告)号：US20090197653A1
公开(公告)日：2009-08-06
申请号：US12269399
申请日：2008-11-12
申请人： Satoshi Mizoguch , Naoto Ito , Hiroshi Shimasaki , Satoru Hara , Takahiro Sogou , Taizo Tomioka
发明人： Satoshi Mizoguch , Naoto Ito , Hiroshi Shimasaki , Satoru Hara , Takahiro Sogou , Taizo Tomioka
CPC分类号： H01Q1/273
摘要： According one aspect of the invention, there is provided a mobile apparatus including: a main face; a back face opposite to the main face, the back face being printed with visible user information; a thickness from the main face to the back face; an antenna disposed at a position nearer the back face than the main face; and an attachment portion attachable with a wearing tool, the wearing tool allowing a user to wear the mobile apparatus.
摘要翻译： 根据本发明的一个方面，提供了一种移动装置，包括：主面; 与主面相对的背面，背面印有可见的用户信息; 从主面到背面的厚度; 设置在比所述主面更靠近所述背面的位置的天线; 以及可与佩戴工具相连的附接部分，所述佩戴工具允许使用者佩戴移动装置。
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5.发明申请OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE 失效光学半导体器件及制造光学半导体器件的方法公开(公告)号：US20080210964A1
公开(公告)日：2008-09-04
申请号：US11854280
申请日：2007-09-12
申请人： Taizo Tomioka
发明人： Taizo Tomioka
CPC分类号： H01L33/60 , H01L33/486 , H01L33/62 , H01L2224/45144 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2224/48091 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An optical semiconductor device includes: a base substrate which has a concave portion; a light-emitting element which is provided in the concave portion, and which emits light; a prevention member which is provided to the base substrate in a manner of covering a side surface of the concave portion, and which prevents the light emitted by the light-emitting element from being incident on the side surface of the concave portion; and a translucent member which is provided in the concave portion, and which seals the light-emitting element.
摘要翻译： 一种光学半导体器件，包括：具有凹部的基底; 发光元件，设置在所述凹部中，发光; 防止部件，其以覆盖所述凹部的侧面的方式设置到所述基底基板，并且防止由所述发光元件发射的光入射到所述凹部的侧面; 以及设置在所述凹部中并且密封所述发光元件的半透明构件。
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公开(公告)号：USD521952S1
公开(公告)日：2006-05-30
申请号：US29206163
申请日：2004-05-27
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公开(公告)号：US07189962B2
公开(公告)日：2007-03-13
申请号：US11059568
申请日：2005-02-17
申请人： Taizo Tomioka
发明人： Taizo Tomioka
CPC分类号： H01L25/167 , H01L24/45 , H01L24/48 , H01L2224/05599 , H01L2224/16225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/85399 , H01L2924/00014 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/10253 , H01L2924/12041 , H01L2924/12043 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/3025 , H03K17/687 , H01L2224/48091 , H01L2924/00 , H01L2924/20752 , H01L2224/4554
摘要： Three chips, i.e., an LED, photovoltaic IC, and MOS-FET, are mounted on a silicon substrate having two projections arranged substantially parallel to each other. Each projection has a side surface formed by an inclined surface including a curve having an inflection point. The LED is mounted on an LED mounting electrode formed between the two projections, and connected, by a gold wire, to an LED connecting electrode formed between the projections. The photovoltaic IC is placed on the front-side surfaces of the projections so as to oppose the LED, and connected via gold bumps.
摘要翻译： 三个芯片，即LED，光电IC和MOS-FET，安装在具有基本上彼此平行布置的两个突起的硅基板上。 每个突起具有由包括具有拐点的曲线的倾斜表面形成的侧表面。 LED安装在形成在两个突起之间的LED安装电极上，并通过金线连接到形成在突起之间的LED连接电极。 光电IC放置在突起的前侧表面上，以便与LED相对，并通过金凸点连接。
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公开(公告)号：US09853279B2
公开(公告)日：2017-12-26
申请号：US13204818
申请日：2011-08-08
申请人： Takahiro Aizawa , Yukihiro Ikeya , Taizo Tomioka
发明人： Takahiro Aizawa , Yukihiro Ikeya , Taizo Tomioka
IPC分类号： H01M2/30 , B23K20/10 , H01M2/26 , B23K101/38 , B23K103/10
CPC分类号： H01M2/30 , B23K20/10 , B23K2101/38 , B23K2103/10 , H01M2/263
摘要： The present invention provides a battery including a container, an electrode group including a positive electrode and a negative electrode, multiple current collecting tabs being extended from any one of the positive electrode and the negative electrode of the electrode group, and overlapped with one another; a lead bonded to at least one of the current collecting tabs by ultrasonic bonding, a lid configured to close an opening portion of the container, and an external terminal provided on the lid and connected to the at least one current collecting tab via the lead, in which the lead has a cross-sectional area that is increased in a middle of extension of the lead from an ultrasonic-bonded portion to the at least one of the current collecting tabs to the external terminal.
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公开(公告)号：US20050189474A1
公开(公告)日：2005-09-01
申请号：US11059568
申请日：2005-02-17
申请人： Taizo Tomioka
发明人： Taizo Tomioka
IPC分类号： H01L31/00 , H03K17/687
CPC分类号： H01L25/167 , H01L24/45 , H01L24/48 , H01L2224/05599 , H01L2224/16225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/85399 , H01L2924/00014 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/10253 , H01L2924/12041 , H01L2924/12043 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/3025 , H03K17/687 , H01L2224/48091 , H01L2924/00 , H01L2924/20752 , H01L2224/4554
摘要： Three chips, i.e., an LED, photovoltaic IC, and MOS-FET, are mounted on a silicon substrate having two projections arranged substantially parallel to each other. Each projection has a side surface formed by an inclined surface including a curve having an inflection point. The LED is mounted on an LED mounting electrode formed between the two projections, and connected, by a gold wire, to an LED connecting electrode formed between the projections. The photovoltaic IC is placed on the front-side surfaces of the projections so as to oppose the LED, and connected via gold bumps.
摘要翻译： 三个芯片，即LED，光电IC和MOS-FET，安装在具有基本上彼此平行布置的两个突起的硅基板上。 每个突起具有由包括具有拐点的曲线的倾斜表面形成的侧表面。 LED安装在形成在两个突起之间的LED安装电极上，并通过金线连接到形成在突起之间的LED连接电极。 光电IC放置在突起的前侧表面上，以便与LED相对，并通过金凸点连接。
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公开(公告)号：USD508682S1
公开(公告)日：2005-08-23
申请号：US29206162
申请日：2004-05-27
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