公开(公告)号：US20080179751A1

公开(公告)日：2008-07-31

申请号：US12017929

申请日：2008-01-22

申请人： Tomoyuki Kitani ,  Tomohiro Iguchi ,  Masako Hirahara ,  Hideo Nishiuchi ,  Akira Tojo ,  Taizo Tomioka

发明人： Tomoyuki Kitani ,  Tomohiro Iguchi ,  Masako Hirahara ,  Hideo Nishiuchi ,  Akira Tojo ,  Taizo Tomioka

IPC分类号： H01L23/29 ,  H01L21/304

CPC分类号： H01L21/78 ,  H01L23/29 ,  H01L23/291 ,  H01L23/293 ,  H01L23/298 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/19043 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A manufacturing method for semiconductor devices includes a process of forming a conductive layer 4 on the other principle surface of a semiconductor wafer 10 having circuit elements 2 formed in one principle surface of the semiconductor wafer, a process of forming a protecting layer 5 on at least a part of the conductive layer, the protecting layer 5 being made from material having hard-to-shave characteristics in comparison with the conductive layer and a process of cutting the semiconductor wafer 10 into pieces with respect to each of the semiconductor devices 1. By the manufacturing method, each semiconductor device 1 is provided with a semiconductor substrate 3 having the circuit elements 2 formed in one principle surface of the semiconductor substrate 3, the conductive layer 4 formed on the other principle surface of the semiconductor substrate 3 and the protecting layer 5 formed on the conductive layer 4 in lamination to have hard-to-shave characteristics in comparison with the conductive layer 4.

摘要翻译： 半导体器件的制造方法包括在半导体晶片10的另一个主表面上形成导电层4的工艺，该半导体晶片10具有形成在半导体晶片的一个主表面中的电路元件2，至少形成保护层5的工艺 导电层的一部分，保护层5由与导电层相比具有难以剃须特性的材料制成，以及将半导体晶片10相对于每个半导体器件1切割成片的工艺。 通过制造方法，每个半导体器件1设置有半导体衬底3，其具有形成在半导体衬底3的一个主表面中的电路元件2，形成在半导体衬底3的另一个主表面上的导电层4和保护 层5形成在导电层4上，与导电层4相比具有难剃刮特性。

公开(公告)号：US20080217754A1

公开(公告)日：2008-09-11

申请号：US12044299

申请日：2008-03-07

申请人： Akira TOJO ,  Tomoyuki Kitani ,  Tomohiro Iguchi ,  Masako Hirahara ,  Hideo Nishiuchi

发明人： Akira TOJO ,  Tomoyuki Kitani ,  Tomohiro Iguchi ,  Masako Hirahara ,  Hideo Nishiuchi

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L24/03 ,  H01L24/05 ,  H01L24/96 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05023 ,  H01L2224/0556 ,  H01L2224/05566 ,  H01L2224/05568 ,  H01L2224/06181 ,  H01L2224/2732 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/48091 ,  H01L2224/83005 ,  H01L2224/83192 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06562 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor chip 5 having a first surface 5a on which a first pole 5a1 of a semiconductor element is arranged and a second surface 5b on which a second pole 5b1 is arranged and which is opposed to the first surface 5a, a first conductive member 6a connected to the first surface 5a, a second conductive member 6b connected to the second surface 5b, a first external electrode 2a connected to the first conductive member 6a and having a contact area larger than the member 6a, a second external electrode 2b connected to the second conductive member 6b and having a contact area larger than the conductive member 6b and a sealing member 3 sealing up the semiconductor chip 6 and the conductive members 6 between the first external electrode 2a and the second external electrode 2b. The sealing member 3 is provided as a result of heating a sealing material for melting and subsequent hardening. A manufacturing method of the semiconductor device is also provided to improve its electrical characteristics and productivity.

摘要翻译： 半导体器件包括半导体芯片5，半导体芯片5具有第一表面5a，半导体元件的第一极5 a 1布置在该第一表面5a和第二表面5b上，第二极5b 1布置在该第二表面5b上， 第一表面5a，连接到第一表面5a的第一导电构件6a，连接到第二表面5b的第二导电构件6b，连接到第一导电构件6a的第一外部电极2a， 接触面积大于部件6a，连接到第二导电部件6b并且具有大于导电部件6b的接触面积的第二外部电极2b和密封半导体芯片6的密封部件3和导电部件 6在第一外部电极2a和第二外部电极2b之间。 通过加热用于熔化的密封材料和随后的硬化来提供密封构件3。 还提供了半导体器件的制造方法以改善其电特性和生产率。

公开(公告)号：US08378479B2

公开(公告)日：2013-02-19

申请号：US13188124

申请日：2011-07-21

申请人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoto Kato

发明人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoto Kato

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/03 ,  H01L24/48 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/274 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode.

摘要翻译： 根据本发明的一个方面，提供一种半导体器件，包括半导体芯片，该半导体芯片包括第一电极和半导体元件的第二电极，第一电极和第二电极被配置在第一表面和第二表面上 半导体芯片的封装材料，封装半导体芯片的封装材料，表面部分不同于区域，每个区域与第一第二电极连接，每个内部电极与第一或第二电极连接，厚度为 来自第一表面或第二表面的内部电极分别与来自第一表面或第二表面的密封材料的厚度相同，外部电极，每个外部电极形成在封装材料上并与内部电极连接， 外部电极的宽度至少比半导体ch的宽度宽 ip和外部电镀材料，覆盖外部电极的除了外部电极的一个表面以外的五个表面的每个外部电镀材料与内部电极连接。

公开(公告)号：US20100052142A1

公开(公告)日：2010-03-04

申请号：US12553452

申请日：2009-09-03

申请人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoko Kato

发明人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoko Kato

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/03 ,  H01L24/48 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/274 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode.

摘要翻译： 根据本发明的一个方面，提供一种半导体器件，包括半导体芯片，该半导体芯片包括第一电极和半导体元件的第二电极，第一电极和第二电极被配置在第一表面和第二表面上 半导体芯片的封装材料，封装半导体芯片的封装材料，表面部分不同于区域，每个区域与第一第二电极连接，每个内部电极与第一或第二电极连接，厚度为 来自第一表面或第二表面的内部电极分别与来自第一表面或第二表面的密封材料的厚度相同，外部电极，每个外部电极形成在封装材料上并与内部电极连接， 外部电极的宽度至少比半导体ch的宽度宽 ip和外部电镀材料，覆盖外部电极的除了外部电极的一个表面以外的五个表面的每个外部电镀材料与内部电极连接。

公开(公告)号：US20100052185A1

公开(公告)日：2010-03-04

申请号：US12546916

申请日：2009-08-25

申请人： Akira TOJO ,  Tomoyuki Kitani ,  Tomohiro Iguchi ,  Takahiro Aizawa ,  Hideo Nishiuchi ,  Masako Fukumitsu

发明人： Akira TOJO ,  Tomoyuki Kitani ,  Tomohiro Iguchi ,  Takahiro Aizawa ,  Hideo Nishiuchi ,  Masako Fukumitsu

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L21/561 ,  H01L23/3107 ,  H01L24/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00

摘要： According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a semiconductor element, a first electrode of the semiconductor chip being configured on a first surface of the semiconductor element, a second electrode of the semiconductor element being configured on a second surface opposed to the first surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, a first hole and a second hole being configured in the encapsulating material, a portion of the first electrode and a portion of the second electrode being exposed, a first conductive material being connected to the first surface of the semiconductor chip via the first hole, a second conductive material being connected to the second surface of the semiconductor chip via the second hole, and a plating film covering five surfaces of the first conductive material other than one surface contacting with the encapsulating material and five surfaces of the second conductive material other than one surface contacting with the encapsulating material.

摘要翻译： 根据本发明的一个方面，提供了一种半导体器件，其包括半导体元件的半导体芯片，半导体芯片的第一电极配置在半导体元件的第一表面上，半导体元件的第二电极 配置在与半导体芯片的第一表面相对的第二表面上，封装半导体芯片的封装材料，在封装材料中配置的第一孔和第二孔，第一电极的一部分和第二电极的一部分 电极被暴露，第一导电材料经由第一孔连接到半导体芯片的第一表面，第二导电材料经由第二孔连接到半导体芯片的第二表面，并且镀覆膜覆盖五个表面 除了与封装材料接触的一个表面之外的第一导电材料 以及第二导电材料的五个表面，而不是与封装材料接触的一个表面。

公开(公告)号：US20090209065A1

公开(公告)日：2009-08-20

申请号：US12367637

申请日：2009-02-09

申请人： Hideo NISHIUCHI ,  Tomohiro Iguchi ,  Tomoyuki Kitani ,  Takahiro Aizawa ,  Masako Fukumitsu ,  Akira Tojo

发明人： Hideo NISHIUCHI ,  Tomohiro Iguchi ,  Tomoyuki Kitani ,  Takahiro Aizawa ,  Masako Fukumitsu ,  Akira Tojo

IPC分类号： H01L21/78 ,  B23K1/06

CPC分类号： H01L24/40 ,  B23K20/004 ,  B23K20/10 ,  B23K20/106 ,  B23K2101/42 ,  H01L24/37 ,  H01L24/45 ,  H01L24/48 ,  H01L24/77 ,  H01L24/84 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37599 ,  H01L2224/40091 ,  H01L2224/40247 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An example of the invention is a method of manufacturing a semiconductor device including, pressing a part of the connection conductor having a plate-like shape or a belt-like shape against a lead terminal which is formed on a lead frame, is formed into a thin and long plate-like shape, and is supported only at one end in a longitudinal direction of the terminal, in such a manner that the part of the conductor is brought into contact with the lead terminal, and applying ultrasonic vibration substantially in the longitudinal direction in a plane perpendicular to the pressing direction to the connection conductor in the state where the part of the connection conductor is pressed against the lead terminal.

摘要翻译： 本发明的一个实例是一种制造半导体器件的方法，其包括：将形成在引线框架上的引线端子压接具有板状或带状形状的连接导体的一部分形成为 薄且长的板状形状，并且仅在端子的纵向方向上的一端被支撑，使得导体的一部分与引线端子接触，并且基本上在纵向上施加超声波振动 在连接导体的一部分压靠引线端子的状态下，在与连接导体的按压方向垂直的平面的方向。

公开(公告)号：US08193643B2

公开(公告)日：2012-06-05

申请号：US12546916

申请日：2009-08-25

申请人： Akira Tojo ,  Tomoyuki Kitani ,  Tomohiro Iguchi ,  Takahiro Aizawa ,  Hideo Nishiuchi ,  Masako Fukumitsu

发明人： Akira Tojo ,  Tomoyuki Kitani ,  Tomohiro Iguchi ,  Takahiro Aizawa ,  Hideo Nishiuchi ,  Masako Fukumitsu

IPC分类号： H01L23/28

CPC分类号： H01L21/561 ,  H01L23/3107 ,  H01L24/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00

摘要： According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a semiconductor element, a first electrode of the semiconductor chip being configured on a first surface of the semiconductor element, a second electrode of the semiconductor element being configured on a second surface opposed to the first surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, a first hole and a second hole being configured in the encapsulating material, a portion of the first electrode and a portion of the second electrode being exposed, a first conductive material being connected to the first surface of the semiconductor chip via the first hole, a second conductive material being connected to the second surface of the semiconductor chip via the second hole, and a plating film covering five surfaces of the first conductive material other than one surface contacting with the encapsulating material and five surfaces of the second conductive material other than one surface contacting with the encapsulating material.

摘要翻译： 根据本发明的一个方面，提供了一种半导体器件，其包括半导体元件的半导体芯片，半导体芯片的第一电极配置在半导体元件的第一表面上，半导体元件的第二电极 配置在与半导体芯片的第一表面相对的第二表面上，封装半导体芯片的封装材料，在封装材料中配置的第一孔和第二孔，第一电极的一部分和第二电极的一部分 电极被暴露，第一导电材料经由第一孔连接到半导体芯片的第一表面，第二导电材料经由第二孔连接到半导体芯片的第二表面，并且镀覆膜覆盖五个表面的 除了与封装材料接触的一个表面之外的第一导电材料 以及第二导电材料的五个表面，而不是与封装材料接触的一个表面。

公开(公告)号：US08008773B2

公开(公告)日：2011-08-30

申请号：US12553452

申请日：2009-09-03

申请人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoko Kato

发明人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoko Kato

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/03 ,  H01L24/48 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/274 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode.

摘要翻译： 根据本发明的一个方面，提供一种半导体器件，包括半导体芯片，该半导体芯片包括第一电极和半导体元件的第二电极，第一电极和第二电极被配置在第一表面和第二表面上 半导体芯片的封装材料，封装半导体芯片的封装材料，表面部分不同于区域，每个区域与第一第二电极连接，每个内部电极与第一或第二电极连接，厚度为 来自第一表面或第二表面的内部电极分别与来自第一表面或第二表面的密封材料的厚度相同，外部电极，每个外部电极形成在封装材料上并与内部电极连接， 外部电极的宽度至少比半导体ch的宽度宽 ip和外部电镀材料，覆盖外部电极的除了外部电极的一个表面之外的五个表面的每个外部电镀材料与内部电极连接。

公开(公告)号：US20080073794A1

公开(公告)日：2008-03-27

申请号：US11854187

申请日：2007-09-12

申请人： Susumu Obata ,  Izuru Komatsu ,  Tomohiro Iguchi ,  Tomoyuki Kitani ,  Masako Hirahara ,  Yasunari Ukita ,  Kazuhito Higuchi

发明人： Susumu Obata ,  Izuru Komatsu ,  Tomohiro Iguchi ,  Tomoyuki Kitani ,  Masako Hirahara ,  Yasunari Ukita ,  Kazuhito Higuchi

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/49562 ,  H01L23/3135 ,  H01L23/49524 ,  H01L24/24 ,  H01L24/40 ,  H01L24/82 ,  H01L24/84 ,  H01L2224/24246 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device (3) is provided with a first electrode (A), a lead (4) has a second electrode (B), and a metallic film (6) electrically interconnects the first electrode (A) and the second electrode (B), allowing for a more reduced internal resistance, high reliability, and facilitated fabrication.

摘要翻译： 半导体器件（3）具有第一电极（A），引线（4）具有第二电极（B），金属膜（6）将第一电极（A）和第二电极（B） ），允许更低的内阻，高可靠性和便于制造。

公开(公告)号：US07656034B2

公开(公告)日：2010-02-02

申请号：US12208718

申请日：2008-09-11

申请人： Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kazuhito Higuchi ,  Tomoyuki Kitani

发明人： Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kazuhito Higuchi ,  Tomoyuki Kitani

IPC分类号： H01L21/60

CPC分类号： H01L24/85 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45647 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/73265 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85909 ,  H01L2224/8592 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/85 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor element, a lead, and a gold wire electrically connecting an electrode of the semiconductor element and the lead. In the semiconductor device, the gold wire is covered with a metal and is a continuous film formed by plating.

摘要翻译： 半导体器件包括半导体元件，引线和电连接半导体元件的电极和引线的金线。 在半导体器件中，金线被金属覆盖，并且是通过电镀形成的连续膜。