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104 条记录 (耗时 0.018 秒)

    Semiconductor device having improved electronic isolation
    1.
    发明授权
    Semiconductor device having improved electronic isolation 失效
    具有改进的电子隔离的半导体器件

    公开(公告)号：US5844303A

    公开(公告)日：1998-12-01

    申请号：US214600

    申请日：1994-03-17

    申请人： Toshihide Kikkawa ,  Tatsuya Ohori ,  Hirosato Ochimizu

    发明人： Toshihide Kikkawa ,  Tatsuya Ohori ,  Hirosato Ochimizu

    IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/76 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/167

    CPC分类号： H01L27/0605 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/7605 ,  H01L21/8252

    摘要： A semiconductor device includes a buffer layer of AlGaAs that contains oxygen with a concentration level in the approximate range of 8.times.10.sup.17 cm.sup.-3 to 6.times.10.sup.19 cm.sup.-3, and carbon with a concentration level in the approximate range of 2.times.10.sup.16 cm.sup.-3 to 2.times.10.sup.17 cm.sup.-3. A lattice constant of the AlGaAs buffer layer is larger than a lattice constant of the GaAs substrate so a lattice misfit of the AlGaAs layer with respect to the GaAs substrate is equal to or varies by no more than 2.times.10.sup.5 from a corresponding lattice misfit between an undoped AlGaAs crystal with respect to the GaAs substrate. Oxygen atoms occupy an interstitial site, creating a deep impurity level that suppresses side gate effect.

    摘要翻译： 半导体器件包括含有浓度在8×10 17 cm -3至6×10 19 cm -3的浓度范围内的氧的AlGaAs缓冲层，浓度水平在2×10 16 cm -3至2×10 17 cm -3的范围内的碳， 3。 AlGaAs缓冲层的晶格常数大于GaAs衬底的晶格常数，因此AlGaAs层相对于GaAs衬底的晶格失配从未掺杂的相应晶格失配等于或不超过2×10 5 AlGaAs晶体相对于GaAs衬底。 氧原子占据间隙位置，产生抑制侧栅效应的深杂质水平。

    Group III-V interdiffusion prevented hetero-junction semiconductor device
    4.
    发明授权
    Group III-V interdiffusion prevented hetero-junction semiconductor device 失效
    III-V相互扩散阻止异质结半导体器件

    公开(公告)号：US5521404A

    公开(公告)日：1996-05-28

    申请号：US353156

    申请日：1994-12-09

    申请人： Toshihide Kikkawa ,  Hirosato Ochimizu

    发明人： Toshihide Kikkawa ,  Hirosato Ochimizu

    IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/12 ,  H01L29/778 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/072

    CPC分类号： B82Y10/00 ,  H01L29/122 ,  H01L29/7783

    摘要： A high electron mobility transistor type group III-V compound semiconductor device includes a substrate of a group III-V compound semiconductor, an electron transfer layer of a group III-V compound semiconductor formed on the substrate, an impurity doped electron supply layer of a group III-V compound semiconductor having a wider band gap and smaller electron affinity than the electron transfer layer, and a spacer layer of a group III-V compound semiconductor having a lattice mismatch with the electron supply layer, the spacer layer being formed between the electron transfer layer and the electron supply layer. A HEMT type group III-V compound semiconductor device is provided which uses an Si-doped electron supply layer of material such as InGaP other than AlGaAs and has good device properties.

    摘要翻译： 高电子迁移率晶体管型III-V族化合物半导体器件包括III-V族化合物半导体的衬底，形成在衬底上的III-V族化合物半导体的电子转移层， 具有比电子转移层更宽的带隙和更小的电子亲和力的III-V族化合物半导体和具有与电子供应层的晶格失配的III-V族化合物半导体的间隔层，间隔层形成在 电子转移层和电子供应层。 提供HEMT型III-V族化合物半导体器件，其使用除了AlGaAs以外的诸如InGaP的材料的Si掺杂电子供给层，并且具有良好的器件特性。

    Apparatus for generating raw material gas used in apparatus for growing thin film
    5.
    发明授权
    Apparatus for generating raw material gas used in apparatus for growing thin film 失效
    用于生长用于生长薄膜的装置中的原料气体的装置

    公开(公告)号：US5460654A

    公开(公告)日：1995-10-24

    申请号：US84020

    申请日：1993-06-30

    申请人： Toshihide Kikkawa ,  Hitoshi Tanaka ,  Hirosato Ochimizu

    发明人： Toshihide Kikkawa ,  Hitoshi Tanaka ,  Hirosato Ochimizu

    IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/448 ,  C30B25/14 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/4485

    摘要： In an apparatus for forming a film of MOCVD, gas source MBE or the like, there is provided a gas supply pipe for supplying gas obtained by gasifying a liquid or solid organic metal raw material to a reaction chamber. A mechanism in which a pressure gauge is fitted in the vicinity of a gas generating source in the gas supply pipe and the gas supply quantity from the gas generating source is regulated based on an indicated value of the pressure gauge so as to suppress variation of the gas pressure is installed in the apparatus for forming a film.There is a heating system for heating the organic metal raw material or an ultrasonic vibrator for applying ultrasonic vibration to the organic metal raw material as the mechanism for regulating the gas supply quantity, and the gasified quantity of the organic metal raw material is varied by regulating the heating temperature of the heating system or by varying the output of the ultrasonic vibrator.

    摘要翻译： 在用于形成MOCVD，气体源MBE等的膜的装置中，设置有用于将通过将液体或固体有机金属原料气化而获得的气体供给到反应室的气体供给管。 基于压力计的指示值，调节在气体供给管内的气体发生源附近配置压力计和来自气体发生源的气体供给量的机构，以抑制压力计的变化 气体压力安装在用于形成薄膜的装置中。 有机加热有机金属原料的加热系统或用于对有机金属原料施加超声振动的超声波振动器作为调节气体供给量的机构，有机金属原料的气化量通过调节 加热系统的加热温度或改变超声波振动器的输出。

    Semiconductor device having a gate recess structure
    8.
    发明授权
    Semiconductor device having a gate recess structure 有权
    具有栅极凹部结构的半导体器件

    公开(公告)号：US09276100B2

    公开(公告)日：2016-03-01

    申请号：US13294740

    申请日：2011-11-11

    申请人： Hiroshi Endo ,  Toshihiro Ohki ,  Toshihide Kikkawa

    发明人： Hiroshi Endo ,  Toshihiro Ohki ,  Toshihide Kikkawa

    IPC分类号： H01L29/78 ,  H01L29/778 ,  H01L29/423 ,  H01L29/66 ,  H01L29/20

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66462 ,  H01L29/7839 ,  H01L2224/0603 ,  H01L2224/48247 ,  H01L2224/48257

    摘要： A semiconductor device includes a first semiconductor layer disposed over a substrate, a second semiconductor layer disposed over the first semiconductor layer, a gate recess disposed, through removal of a part of or all the second semiconductor layer, in a predetermined region over the first semiconductor layer, an insulating film disposed over the gate recess and the second semiconductor layer, a gate electrode disposed over the gate recess with the insulating film therebetween, and a source electrode and a drain electrode disposed over the first semiconductor layer or the second semiconductor layer, whereby a central portion of the gate recess is higher than a peripheral portion of the gate recess.

    摘要翻译： 半导体器件包括设置在衬底上的第一半导体层，设置在第一半导体层上的第二半导体层，通过在第一半导体上的预定区域中去除一部分或全部第二半导体层而设置的栅极凹槽 设置在所述栅极凹部和所述第二半导体层上的绝缘膜，设置在所述栅极凹部上方的绝缘膜的栅电极，以及设置在所述第一半导体层或所述第二半导体层上的源电极和漏电极， 从而栅极凹部的中心部分比栅极凹部的周边部分高。

    Compound semiconductor device and manufacturing method thereof
    9.
    发明授权
    Compound semiconductor device and manufacturing method thereof 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US08816408B2

    公开(公告)日：2014-08-26

    申请号：US12721052

    申请日：2010-03-10

    申请人： Kozo Makiyama ,  Toshihide Kikkawa

    发明人： Kozo Makiyama ,  Toshihide Kikkawa

    IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/78 ,  H01L29/20 ,  H01L29/06 ,  H01L29/423

    CPC分类号： H01L29/7787 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7843

    摘要： A compound semiconductor device includes a compound semiconductor laminated structure; a source electrode, a drain electrode, and a gate electrode formed over the compound semiconductor laminated structure; a first protective film formed over the compound semiconductor laminated structure between the source electrode and the gate electrode and including silicon; and a second protective film formed over the compound semiconductor laminated structure between the drain electrode and the gate electrode and including more silicon than the first protective film.

    摘要翻译： 化合物半导体器件包括化合物半导体层叠结构; 源电极，漏电极和形成在化合物半导体层叠结构上的栅电极; 在所述源电极和所述栅电极之间并且包括硅的所述化合物半导体层叠结构上形成的第一保护膜; 以及形成在所述漏电极和所述栅电极之间的所述化合物半导体层叠结构上并且包含比所述第一保护膜更多的硅的第二保护膜。