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公开(公告)号：US20050159148A1
公开(公告)日：2005-07-21
申请号：US11033384
申请日：2005-01-12
IPC分类号： H01Q21/29 , H04B7/08 , H04B7/26 , H04L12/28 , H04M1/00 , H04W16/28 , H04W24/00 , H04W88/02 , H04Q7/20
CPC分类号： H04W24/00 , H01Q21/29 , H04B7/0805 , H04B7/0814 , H04W88/02
摘要： In a radio communication system having a plurality of antennas, a reception-system circuit including variable gain amplification circuits for amplifying a signal received from either of the antennas and a frequency conversion circuit for down-converting the received signal to a signal of a lower frequency, and a signal measuring circuit for detecting intensity of the received signal, whereby a signal received by either of the antennas is selected in accordance with a reception state and amplified and demodulated, change rates with time of a signal which is formed by the signal measuring circuit are determined in respect of either of the signals received by the plurality of antennas and a control signal for selecting a reception antenna is generated in accordance with a differences between the change rates.
摘要翻译： 在具有多个天线的无线电通信系统中，包括用于放大从任一天线接收的信号的可变增益放大电路的接收系统电路和用于将接收信号下变频为较低频率的信号的频率转换电路 以及用于检测接收信号的强度的信号测量电路，由此根据接收状态选择由天线中的任一个接收的信号，并且由信号测量形成的信号随时间变化的放大和解调变化率 根据多个天线接收到的信号之一确定电路，并且根据变化率之间的差异生成用于选择接收天线的控制信号。
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2.发明授权Semiconductor integrated circuit device, wireless LAN system, and auto gain control system 失效半导体集成电路器件，无线局域网系统和自动增益控制系统公开(公告)号：US07263145B2
公开(公告)日：2007-08-28
申请号：US10617687
申请日：2003-07-14
申请人： Toshihito Habuka , Masaki Noda , Hiroshi Nogami , Toyokazu Hori , Tatsuji Matsuura , Kazuaki Hori , Naoto Inokawa
发明人： Toshihito Habuka , Masaki Noda , Hiroshi Nogami , Toyokazu Hori , Tatsuji Matsuura , Kazuaki Hori , Naoto Inokawa
CPC分类号： H04L25/061 , H03G3/001 , H04B7/0805 , H04B7/0814 , H04B7/0822 , H04L27/2647 , H04L27/3809
摘要： A wireless LAN system has auto gain control with no work load applied to its baseband processing block. When the wireless LAN system gets ready to receive a signal, the gain control circuit switches between the receiving antennas. The gain control circuit sets gain setting value time divisional data according to the level of a received signal to roughly control the gain to be set in the LAN and the gain to be set in two programmable gain amplifiers.
摘要翻译： 无线LAN系统具有自动增益控制，没有工作负载施加到其基带处理块。 当无线LAN系统准备好接收信号时，增益控制电路在接收天线之间切换。 增益控制电路根据接收信号的电平设置增益设定值时分数据，以粗略地控制要在LAN中设置的增益和在两个可编程增益放大器中设置的增益。
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公开(公告)号：US07313125B2
公开(公告)日：2007-12-25
申请号：US10809898
申请日：2004-03-26
CPC分类号： H04L25/061 , H04L27/2657 , H04L27/2675 , H04L27/2679
摘要： The invention comprises: processing for receiving an OFDM packet having a preamble and the following data transmission symbol, in which packet the subcarrier interval of the preamble is set wider than that of the data transmission symbol; processing for estimating a DC offset occurring at a receiving side by using the received preamble; processing for correcting the DC offset on the received data transmission symbol, according to the estimation result of the DC offset; and processing for demodulating the DC offset corrected data transmission symbol. Thus, it is possible to estimate a DC offset and then correct the DC offset according to the estimated value, in the OFDM packet with no nul symbol defined there.
摘要翻译： 本发明包括：接收具有前同步码和后续数据传输符号的OFDM分组的处理，其中前导码的子载波间隔被设置为比数据传输符号的子载波间隔宽; 用于通过使用所接收的前导码来估计在接收侧发生的DC偏移的处理; 根据直流偏移的估计结果对接收到的数据传输符号校正直流偏移的处理; 以及用于解调DC偏移校正数据传输符号的处理。 因此，可以估计DC偏移，然后根据估计值在没有nul符号的OFDM分组中校正DC偏移。
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公开(公告)号：US08794398B2
公开(公告)日：2014-08-05
申请号：US13110325
申请日：2011-05-18
CPC分类号： F16D65/12 , B61H5/00 , F16D65/0006 , F16D65/124 , F16D65/128 , F16D65/847 , F16D2065/1332 , F16D2065/138 , F16D2065/1392
摘要： A brake disc for a railway vehicle, including a ring-shaped plate portion with a front side serving as a frictional surface and a plurality of fins being projected and disposed radially on the back side of the plate portion, the plate portion being fixed to a wheel, wherein a rib is provided between fins adjacent to each other, and a slit developing in the direction from a wheel-side face of the rib toward the back side of the plate portion is disposed in a circumferentially intermediate portion of the rib, thereby making it possible to suppress the deformation caused by frictional heat.
摘要翻译： 一种用于铁路车辆的制动盘，包括具有作为摩擦表面的前侧的环形板部分和沿板部的后侧径向突出并设置的多个翅片，所述板部固定到 轮，其中在彼此相邻的翅片之间设置有肋，并且在肋的周向中间部分上设置从肋的轮侧面朝向板部的后侧的方向形成的狭缝，由此 使得可以抑制由摩擦热引起的变形。
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5.发明申请公开(公告)号：US20110239720A1
公开(公告)日：2011-10-06
申请号：US12225726
申请日：2007-03-20
申请人： Kouji Nakaike , Yasuyoshi Hidaka , Hiroshi Nogami
发明人： Kouji Nakaike , Yasuyoshi Hidaka , Hiroshi Nogami
IPC分类号： B21B17/02
CPC分类号： B21B23/00 , B21B17/02 , B21B17/04 , B21B19/04 , B21B25/04 , B21B45/004 , C21D1/70 , C21D1/74 , C21D3/00 , C21D8/10 , C21D9/08
摘要： A production method of a seamless pipe or tube according to the present invention comprises the steps of applying a lubricant containing carbon to a mandrel bar, producing a material pipe or tube with a mandrel mill using the mandrel bar to which the lubricant is applied, and reheating the material pipe or tube in a reheating furnace, wherein when a temperature of the material pipe or tube is 550° C. or higher and 1000° C. or lower in the reheating step, an oxidizing gas is fed into the material pipe or tube.
摘要翻译： 根据本发明的无缝管或管的制造方法包括以下步骤：向芯棒施加含碳润滑剂，使用使用润滑剂的芯棒，用芯棒式无缝管轧机生产材料管或管;以及 在再加热炉中重新加热材料管或管，其中当再加热步骤中材料管或管的温度为550℃以上且1000℃以下时，将氧化气体供给至原料管或 管。
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公开(公告)号：US07780790B2
公开(公告)日：2010-08-24
申请号：US12566205
申请日：2009-09-24
申请人： Hiroshi Nogami
发明人： Hiroshi Nogami
IPC分类号： C23C16/00 , C23C16/455 , C23C16/50 , C23C16/505 , H01L21/3065
CPC分类号： H01J37/32422 , C23C16/45565 , C23C16/509 , H01J37/32091 , H01J37/32587
摘要： Disclosed is a vacuum processing apparatus in which a conducive partition having a plurality of through holes is formed inside a vacuum processing vessel, and an internal space of the vacuum processing vessel is partitioned into a plasma generating space in which a high-frequency electrode is installed to function as a counter electrode with respect to the partition, and a substrate processing space in which a substrate is set. This vacuum processing apparatus includes a gas reservoir formed on a sidewall of the vacuum processing vessel and communicating with the plasma generating space, and a gas supply system connected to the gas reservoir to supply a gas to the gas reservoir.
摘要翻译： 公开了一种真空处理装置，其中在真空处理容器内部形成具有多个通孔的导通隔板，并且将真空处理容器的内部空间分隔成其中安装有高频电极的等离子体产生空间 作为相对于隔板的对电极，以及设置有基板的基板处理空间。 该真空处理装置包括形成在真空处理容器的侧壁上并与等离子体产生空间连通的气体储存器，以及连接到气体储存器以向气体储存器供应气体的气体供应系统。
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7.发明授权Remote plasma apparatus for processing substrate with two types of gases 有权用于处理具有两种类型气体的基板的远程等离子体装置公开(公告)号：US07709063B2
公开(公告)日：2010-05-04
申请号：US11620518
申请日：2007-01-05
申请人： Katsuhisa Yuda , Hiroshi Nogami
发明人： Katsuhisa Yuda , Hiroshi Nogami
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/452 , C23C16/45574 , H01J37/32357 , H01J37/32422
摘要： In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.
摘要翻译： 在等离子体CVD装置中，形成有多个穿孔的板被布置成分离等离子体产生区域和处理区域。 穿孔孔与孔板的孔径比不大于百分之五。 从等离子体产生区域中的氧（O 2）气体产生包括自由基和激发物质的等离子体，然后自由基和激发物质通过穿孔穿过处理区域。 也可以在处理区域内供给单硅烷（SiH 4）气体，但通过该板抑制了甲硅烷气体向等离子体产生区域的逆流。 在处理区域中，自由基和被激发的物质和单硅烷气体导致气相反应，其产生在基板或晶片上形成的高质量的二氧化硅膜。
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公开(公告)号：US20090202721A1
公开(公告)日：2009-08-13
申请号：US11886317
申请日：2006-03-14
申请人： Hiroshi Nogami , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Hiroshi Nogami , Katsuhisa Yuda , Hiroshi Tanabe
CPC分类号： C23C16/401 , C23C16/402 , C23C16/452 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： A method for thin film formation that can form, at a low temperature, a good thin film having a good interfacial property between a silicon substrate and a silicon oxide film and having a low interfacial trap density is provided.The method for thin film formation comprises generating plasma within a vacuum vessel to generate an active species (radical) and forming a silicon oxide film on a silicon substrate using this active species and a material gas, wherein, in addition to the material gas, a nitrogen atom-containing gas is introduced into the vacuum vessel in its film forming space where the active species (radical) and the material gas come into contact with each other for the first time and are reacted with each other to form a silicon film on the silicon substrate, and wherein the flow rate of the nitrogen atom-containing gas during the formation of the silicon oxide film on the silicon substrate is regulated so as to be the maximum value at least at the time of the start of formation of the silicon film on the silicon substrate.
摘要翻译： 提供了一种薄膜形成方法，其可以在低温下形成在硅衬底和氧化硅膜之间具有良好界面性能并具有低界面陷阱密度的良好薄膜。 用于薄膜形成的方法包括在真空容器内产生等离子体以产生活性物质（自由基），并使用该活性物质和材料气体在硅衬底上形成氧化硅膜，其中，除了材料气体之外， 含氮原子气体在其成膜空间中被引入真空容器中，其中活性物质（自由基）和原料气体首次相互接触并且彼此反应以形成硅膜 硅衬底，并且其中在硅衬底上形成氧化硅膜期间含氮原子气体的流速被调节为至少在开始形成硅膜时为最大值 在硅衬底上。
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9.发明授权Encryption and decryption communication semiconductor device and recording/reproducing apparatus 失效加密和解密通信半导体器件和记录/再现装置公开(公告)号：US07290148B2
公开(公告)日：2007-10-30
申请号：US10352876
申请日：2003-01-29
CPC分类号： H04N5/913 , G11B20/00086 , G11B20/0021 , G11B20/00246 , G11B20/00413 , H04N5/765 , H04N5/775 , H04N5/781 , H04N9/8042 , H04N2005/91364
摘要： Disclosed herein is an encryption and decryption communication semiconductor device comprising at least, a communication interface for performing a transfer of data according to a predetermined communication system, one or two or more encryption/decryption circuits which encrypt or decrypt input data in accordance with a predetermined algorithm, and a plurality of external interfaces for performing the input/output of data from and to external devices. The communication interface, the encryption/decryption circuits and the plurality of external interfaces are formed on one semiconductor chip. In the cryption and decryption communication semiconductor device, input data sent from any one of the plurality of external interfaces is encrypted or decrypted by at least one of the encryption/decryption circuits and is capable of being outputted to any different one of the plurality of external interfaces.
摘要翻译： 本文公开了一种加密和解密通信半导体装置，至少包括用于根据预定通信系统执行数据传输的通信接口，根据预定的加密/解密电路对输入数据进行加密或解密的一个或两个以上加密/解密电路 算法和用于执行从外部设备到外部设备的数据的输入/输出的多个外部接口。 通信接口，加密/解密电路和多个外部接口形成在一个半导体芯片上。 在加密解密通信半导体装置中，从多个外部接口中的任何一个发送的输入数据由加密/解密电路中的至少一个加密或解密，并能够输出到多个外部接口中的任意一个 接口
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10.发明申请REMOTE PLASMA APPARATUS FOR PROCESSING SUBSTRATE WITH TWO TYPES OF GASES 有权用于加工具有两种类型气体的基板的远程等离子体设备公开(公告)号：US20070110918A1
公开(公告)日：2007-05-17
申请号：US11620518
申请日：2007-01-05
申请人： Katsuhisa Yuda , Hiroshi Nogami
发明人： Katsuhisa Yuda , Hiroshi Nogami
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/452 , C23C16/45574 , H01J37/32357 , H01J37/32422
摘要： In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.
摘要翻译： 在等离子体CVD装置中，形成有多个穿孔的板被布置成分离等离子体产生区域和处理区域。 穿孔孔与孔板的孔径比不大于百分之五。 等离子体产生区域中的氧（O 2 O 2）气体产生包括自由基和激发物质的等离子体，然后自由基和激发物质通过穿孔穿过处理区域。 也可以在处理区域中供给单硅烷（SiH 4 S）气体，但通过该板抑制甲硅烷气体向等离子体产生区域的逆流。 在处理区域中，自由基和被激发的物质和单硅烷气体导致气相反应，其产生在基板或晶片上形成的高质量的二氧化硅膜。
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