公开(公告)号：US4972241A

公开(公告)日：1990-11-20

申请号：US234652

申请日：1988-08-22

申请人： Toshikazu Fukuda ,  Toru Suga ,  Yutaka Tomisawa

发明人： Toshikazu Fukuda ,  Toru Suga ,  Yutaka Tomisawa

IPC分类号： H01L43/02 ,  H01L43/00 ,  H01L43/06 ,  H01L43/14

CPC分类号： H01L43/14 ,  H01L43/06 ,  H01L43/065

摘要： A chip including a Hall element for detecting a magnetic force is p repared. On the chip is formed an unhardened magnetic resin layer, which is formed of a mixture of soft magnetic powder an dsilicone rubber. The unhardened magnetic resin layer is applied with a magnetic field and is stretched in a direction perpendicular to one face of the chip, so that its top portion is formed in a substantially conical shape and its bottom portion is formed in a substantially rectangular block, the ratio of the length Wa of its base to its height Wb, Wb/Wa, being equal to or greater than 1. The magnetic resin layer is then hardened. As a result, a magnetic force detecting semiconductor device is provided, which has a magnetic resin layer with a high magnetic force convergence that has its top portion formed in a conical shape and its bottom portion formed in a rectangular block, the ratio of the length of its base to its height being equal to and greater than 1.

公开(公告)号：US5204278A

公开(公告)日：1993-04-20

申请号：US853859

申请日：1992-03-20

申请人： Souichi Imamura ,  Toru Suga

发明人： Souichi Imamura ,  Toru Suga

IPC分类号： H01L21/265 ,  H01L21/338

CPC分类号： H01L29/66871 ,  H01L21/26553

摘要： After a silicon nitride film is deposited on a compound semiconductor substrate, another insulating film such as a silicon dioxide film is provided thereon so as to define a channel region in the semiconductor substrate. Impurity ions such as Si ions are selectively implanted into the semiconductor substrate in the presence of the silicon nitride film and the insulating film, thereby providing source and drain regions and the channel region therein. The insulating film and the silicon nitride film located above the channel region are successively removed to provide a Schottky gate electrode thereon. The silicon nitride film is selectively removed from the substrate surface to provide source and drain electrodes on their regions. Accordingly, MESFETs can be produced without exposing the substrate surface during its manufacture.

摘要翻译： 在化合物半导体衬底上沉积氮化硅膜之后，在其上设置诸如二氧化硅膜的另一绝缘膜，以在半导体衬底中限定沟道区。 在氮化硅膜和绝缘膜的存在下，将诸如Si离子的杂质离子选择性地注入到半导体衬底中，由此在其中提供源极和漏极区域以及沟道区域。 连续地去除位于沟道区上方的绝缘膜和氮化硅膜，以在其上提供肖特基栅电极。 从衬底表面选择性地去除氮化硅膜以在其区域上提供源电极和漏电极。 因此，可以在其制造期间不暴露衬底表面来制造MESFET。

公开(公告)号：US5717232A

公开(公告)日：1998-02-10

申请号：US632836

申请日：1996-04-16

申请人： Kazuhiko Inoue ,  Souichi Imamura ,  Masanori Ochi ,  Shigehiro Hosoi ,  Toru Suga ,  Takashi Kimura

发明人： Kazuhiko Inoue ,  Souichi Imamura ,  Masanori Ochi ,  Shigehiro Hosoi ,  Toru Suga ,  Takashi Kimura

IPC分类号： H01L21/338 ,  H01L23/29 ,  H01L23/31 ,  H01L23/66 ,  H01L29/812 ,  H01L29/80 ,  H01L23/58

CPC分类号： H01L23/66 ,  H01L23/293 ,  H01L23/3171 ,  H01L24/05 ,  H01L24/06 ,  H01L2223/6644 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/49175 ,  H01L2224/85444 ,  H01L2224/85466 ,  H01L2224/85469 ,  H01L2224/8592 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/16152 ,  H01L2924/181

摘要： A semiconductor device has an active layer formed on a semiconductor substrate with different types of junctions, a source region, a drain region, a T-shaped gate electrode in which the cross-sectional area of the upper surface is larger than that of the lower surface, a first dielectric layer covering at least the exposed surface of the active layer, and the gate electrode, and a second dielectric layer enclosing the first dielectric layer. In the device, when the specific inductive capacities of the first and second dielectric layers are .epsilon.(1) and .epsilon.(2) respectively .epsilon.(1)

摘要翻译： 半导体器件具有形成在具有不同类型结的半导体衬底上的有源层，源极区，漏极区，T形栅电极，其中上表面的截面积大于下表面的横截面面积 表面，至少覆盖有源层的暴露表面的第一电介质层和栅电极，以及包围第一介电层的第二电介质层。 在该器件中，当第一和第二电介质层的比感应电容分别为ε（1）和ε（2）分别为ε（1）<ε（2）时，第一介电层的吸水率大于 第二电介质层的吸水率。

公开(公告)号：US4947236A

公开(公告)日：1990-08-07

申请号：US278317

申请日：1988-12-01

申请人： Toru Suga ,  Kazuhiko Inoue

发明人： Toru Suga ,  Kazuhiko Inoue

IPC分类号： H01L23/28 ,  H01L43/04

CPC分类号： H01L43/04 ,  H01L2224/48247 ,  H01L2924/181

摘要： A semiconductor device includes an SIL type package for projection of the pellet of a Hall sensor used for detecting the position of a motor. An inclined portion is formed on an edge portion which faces the motor coil so that the edge portion will come into area-contact with the motor coil even if they come into contact with each other, thus causing no stress concentration on the motor coil.

摘要翻译： 半导体器件包括用于投影用于检测电动机位置的霍尔传感器的颗粒的SIL型封装。 在与电动机线圈相对的边缘部形成有倾斜部，使得即使它们彼此接触，边缘部也将与电动机线圈区域接触，从而不会对电动机线圈产生应力集中。

公开(公告)号：US5229637A

公开(公告)日：1993-07-20

申请号：US913452

申请日：1992-07-15

申请人： Toru Suga ,  Kazuhiko Inoue

发明人： Toru Suga ,  Kazuhiko Inoue

IPC分类号： H01L21/338 ,  H01L29/207 ,  H01L29/812

CPC分类号： H01L29/66871 ,  H01L29/207 ,  H01L29/812

摘要： In a semiconductor device constituting a GaAs MESFET, a GaAs substrate is prepared from a base material containing boron ions as a dopant impurity having a total impurity concentration of 2.times.10.sup.17 atoms/cm.sup.3 or more. The boron ions are introduced into the GaAs substrate during crystal growth so that a uniform distribution of boron ions in the substrate results. Electrode layers are formed at predetermined portions on the GaAs substrate, and an active layer is formed to be adjacent to the electrode layers by ion implantation. Source and drain electrodes are formed on the electrode layers respectively, and a gate electrode is formed on the active layer.

摘要翻译： 在构成GaAs MESFET的半导体器件中，从含有杂质浓度为2×10 17原子/ cm 3以上的掺杂杂质的硼离子的基材制备GaAs衬底。 在晶体生长期间，硼离子被引入到GaAs衬底中，从而导致在衬底中硼离子的均匀分布。 电极层形成在GaAs衬底上的预定部分处，并且通过离子注入形成与电极层相邻的有源层。 源极和漏极分别形成在电极层上，并且在有源层上形成栅电极。

公开(公告)号：US5153703A

公开(公告)日：1992-10-06

申请号：US704838

申请日：1991-05-20

申请人： Toru Suga ,  Kazuhiko Inoue

发明人： Toru Suga ,  Kazuhiko Inoue

IPC分类号： H01L21/338 ,  H01L29/207 ,  H01L29/812

CPC分类号： H01L29/66871 ,  H01L29/207 ,  H01L29/812

摘要： In a semiconductor device constituting a GaAs MESFET, a GaAs substrate is prepared from a base material containing boron and carbon ions as impurities having a total impurity concentration of 2.times.10.sup.17 atoms/cm.sup.3 or more. Electrode layers are formed at predetermined portions on the GaAs substrate, and an active layer is formed to be adjacent to the electrode layers by ion implantation. Source and drain electrodes are formed on the electrode layers, respectively, and a gate electrode is formed on the active layer.

摘要翻译： 在构成GaAs MESFET的半导体器件中，由含有硼和碳离子的杂质作为杂质的总杂质浓度为2×10 17 atoms / cm 3以上的原料制备GaAs衬底。 电极层形成在GaAs衬底上的预定部分处，并且通过离子注入形成与电极层相邻的有源层。 源极和漏极分别形成在电极层上，并且在有源层上形成栅电极。

公开(公告)号：US4868920A

公开(公告)日：1989-09-19

申请号：US172443

申请日：1988-03-24

申请人： Kazuhiko Inoue ,  Toru Suga

发明人： Kazuhiko Inoue ,  Toru Suga

IPC分类号： H01L29/41 ,  H01L21/338 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/812

CPC分类号： H01L29/402 ,  H01L29/41725 ,  H01L29/812

摘要： A MESFET device includes a semi-insulative substrate, a source region, a drain region, a channel region, a source electrode, a drain electrode, a gate electrode, and a gate-electrode pad. The source region, drain region, and the channel region are formed in a surface region of the substrate. The three electrode and the gate-electrode pad are formed on the substrate. The MESFET device further comprises a conductive layer formed on the substrate and surrounds the source electrode and the gate-electrode pad. The conductive layer is connected to the drain electrode.