公开(公告)号：US20050037597A1

公开(公告)日：2005-02-17

申请号：US10403211

申请日：2003-04-01

申请人： Tue Nguyen ,  Tai Nguyen ,  Craig Bercaw

发明人： Tue Nguyen ,  Tai Nguyen ,  Craig Bercaw

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C23C16/515 ,  H01L21/00 ,  H01L21/20

CPC分类号： C23C16/45536 ,  C23C16/45561 ,  C23C16/481 ,  C23C16/515 ,  H01L21/67115 ,  H01L21/67248

摘要： Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

摘要翻译： 公开了利用处理室执行半导体处理的系统和方法; 适合重复触发的闪光灯; 以及耦合到闪光灯的控制输入以触发闪光灯的控制器。 该系统可以在晶片处理中部署与闪光灯并联的固态等离子体源。

公开(公告)号：US20070020945A1

公开(公告)日：2007-01-25

申请号：US11443620

申请日：2006-05-31

申请人： Tue Nguyen ,  Tai Nguyen ,  Craig Bercaw

发明人： Tue Nguyen ,  Tai Nguyen ,  Craig Bercaw

IPC分类号： H01L21/31

CPC分类号： H01L21/67115 ,  H01J37/32009 ,  H01J37/32339 ,  H01L21/67248

摘要： Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

摘要翻译： 公开了利用处理室执行半导体处理的系统和方法; 适合重复触发的闪光灯; 以及耦合到闪光灯的控制输入以触发闪光灯的控制器。 该系统可以在晶片处理中部署与闪光灯并联的固态等离子体源。

公开(公告)号：US20070020898A1

公开(公告)日：2007-01-25

申请号：US11443621

申请日：2006-05-31

申请人： Tue Nguyen ,  Tai Nguyen ,  Craig Bercaw

发明人： Tue Nguyen ,  Tai Nguyen ,  Craig Bercaw

IPC分类号： H01L21/28

CPC分类号： H01L21/67115 ,  H01J37/32009 ,  H01J37/32339 ,  H01L21/67248

摘要： Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

摘要翻译： 公开了利用处理室执行半导体处理的系统和方法; 适合重复触发的闪光灯; 以及耦合到闪光灯的控制输入以触发闪光灯的控制器。 该系统可以在晶片处理中部署与闪光灯并联的固态等离子体源。

公开(公告)号：US6123097A

公开(公告)日：2000-09-26

申请号：US672891

申请日：1996-06-28

申请人： Quoc Truong ,  Imad Yousif ,  Vincente Lim ,  Craig Bercaw

发明人： Quoc Truong ,  Imad Yousif ,  Vincente Lim ,  Craig Bercaw

IPC分类号： F16K49/00 ,  F16K51/02

CPC分类号： F16K49/002 ,  F16K51/02 ,  Y10T137/428 ,  Y10T137/6416 ,  Y10T137/6606

摘要： The present invention provides an apparatus and methods for controlling gas pressure within a semiconductor process chamber. The apparatus comprises a throttle valve 32 positioned downstream of the process chamber outlet for controlling gas flow therethrough. The throttle valve includes a valve body 41 having a through-hole and a plug 44 movably disposed within the valve body for controlling gas flow through the through-hole. The throttle valve incorporates an abrasive element 86 disposed within the valve body in abrading contact with an exposed surface 89 of the plug. The abrasive element effectively removes gas deposited onto the exposed surface of the valve plug during operation of the throttle valve. In another aspect of the invention, the valve body comprises one or more heating elements 77, 78 thermally coupled to the exposed surface of the valve plug for conductively transferring heat to the exposed surface of the valve plug, thereby inhibiting solidification of process gases that may have deposited on this surface.

摘要翻译： 本发明提供一种用于控制半导体处理室内的气体压力的装置和方法。 该设备包括位于处理室出口下游的节流阀32，用于控制气流从中流过。 节流阀包括具有通孔的阀体41和可移动地设置在阀体内的塞子44，用于控制通过通孔的气流。 节流阀包括设置在阀体内的研磨元件86，其与插头的暴露表面89研磨接触。 研磨元件在节流阀操作期间有效地除去沉积在阀塞暴露表面上的气体。 在本发明的另一方面，阀体包括与阀塞的暴露表面热耦合的一个或多个加热元件77,78，用于将热量传导到阀塞的暴露表面，由此抑制工艺气体的凝固， 已沉积在该表面上。

公开(公告)号：US20070022959A1

公开(公告)日：2007-02-01

申请号：US11496787

申请日：2006-07-31

申请人： Craig Bercaw ,  Dan Cossentine ,  Robert Bailey ,  Jack Yao ,  Tommy Lo

发明人： Craig Bercaw ,  Dan Cossentine ,  Robert Bailey ,  Jack Yao ,  Tommy Lo

IPC分类号： C23C16/00

CPC分类号： C23C16/4401 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45561 ,  H01L21/6719 ,  H01L21/67751

摘要： The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a deposition apparatus having a reduced reaction zone volume. In some embodiments a deposition apparatus is provided with a process chamber having a raised reaction zone. Other embodiments of the present invention provide a deposition apparatus with a process chamber having a vertical baffle ring. Embodiments of the present invention provide a reduced reaction zone or volume which promotes uniform gas flow pattern and faster gas exchange.

摘要翻译： 本发明一般涉及用于半导体处理的沉积设备。 更具体地，本发明的实施方案涉及具有降低的反应区体积的沉积设备。 在一些实施例中，沉积设备设置有具有升高的反应区的处理室。 本发明的其他实施例提供一种具有处理室的沉积设备，该处理室具有垂直挡板环。 本发明的实施方案提供了减少的反应区域或体积，其促进均匀的气体流动模式和更快的气体交换。

公开(公告)号：US06242111B1

公开(公告)日：2001-06-05

申请号：US08119444

申请日：1993-09-08

申请人： Susan G. Telford ,  Craig Bercaw

发明人： Susan G. Telford ,  Craig Bercaw

IPC分类号： C25D1102

CPC分类号： C25D11/16 ,  C25D11/10 ,  H01L21/68757 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/1259 ,  Y10T428/12764 ,  H01L2924/00

摘要： Disclosed is a method of making an anodized aluminum susceptor capable of withstanding an elevated temperature of 590° C., or a temperature as high as 475° C. in the presence of an NF3 plasma, without peeling or cracking, which preferably comprises selecting a high purity or low magnesium aluminum alloy, roughening the surface of the alloy, and then anodizing the surface roughened alloy in an electrolyte comprising an organic acid to form the desired anodized aluminum oxide coating thereon. Further, the invention comprises a high purity or low magnesium aluminum alloy susceptor and an organic acid anodic coating thereon highly resistant to spalling or cracking at elevated temperatures.

摘要翻译： 公开了一种制造阳极氧化铝基座的方法，该阳极氧化铝基座能够在不存在剥离或开裂的情况下耐受590℃的高温或高达475℃的温度，而不会剥离或开裂，优选包括选择 高纯度或低镁铝合金，使合金的表面粗糙化，然后在包含有机酸的电解质中阳极氧化表面粗糙合金，以在其上形成所需的阳极化氧化铝涂层。 此外，本发明包括高纯度或低镁铝合金基座和其上的有机酸阳极涂层，其高度耐高温下的剥落或开裂。

公开(公告)号：US5811195A

公开(公告)日：1998-09-22

申请号：US499983

申请日：1995-07-10

申请人： Craig Bercaw ,  Laxman Murugesh ,  Joshua E. Byrne

发明人： Craig Bercaw ,  Laxman Murugesh ,  Joshua E. Byrne

IPC分类号： C23C8/02 ,  C23C8/08 ,  C23C8/36 ,  C23C16/44 ,  H01J37/32 ,  H01L21/02 ,  G02B5/08

CPC分类号： H01J37/32477 ,  C23C16/4404 ,  C23C8/02 ,  C23C8/08 ,  C23C8/36 ,  H01J37/32559 ,  Y10T428/12729 ,  Y10T428/12736 ,  Y10T428/24967 ,  Y10T428/265

摘要： We have discovered that corrosion of an aluminum article (such as a susceptor) exposed to corrosive halogen-containing species within semiconductor processing apparatus can be avoided by fabricating the article from a high purity aluminum-magnesium alloy having an optimum magnesium content. Upon exposure of the article to a halogen-containing species, a protective magnesium halide layer is formed upon or beneath the surface of the article. The protective layer prevents halogens from penetrating to the base aluminum, thereby protecting the article from corrosion and cracking. To protect the magnesium halide layer from abrasion, the article preferably also includes a hard, cohesive coating over the magnesium halide layer. A preferred cohesive coating is aluminum oxide or aluminum nitride. The magnesium content of the aluminum article, to enable formation of a magnesium halide layer, should be in the range of about 0.1% to about 6% by weight, depending on the operational temperature of the article. For temperatures greater than about 250.degree. C., the magnesium content of the aluminum article should range between about 0.1% by weight and about 1.5% by weight of the article. The magnesium may be present throughout the entire article, or at least in a region of the article beneath or at the surface which is to be rendered corrosion-resistant. Although the magnesium can react with chlorine, fluorine, or bromine to form a protective layer of MgCl.sub.2, MgF.sub.2, MgBr.sub.2 or combinations thereof, the most preferred protective layer is one formed of MgF.sub.2. To ensure that the magnesium present in the aluminum article is available for reaction with the halogen to form the protective layer, the magnesium content should exceed the silicon content of the aluminum article by an amount sufficient to ensure formation of the protective layer.

摘要翻译： 我们已经发现，通过从具有最佳镁含量的高纯度铝镁合金制造该制品，可以避免在半导体加工装置内暴露于含腐蚀性卤素物质的铝制品（例如感受器）的腐蚀。 在将物品暴露于含卤素物质时，在制品的表面上或下方形成保护性卤化镁层。 保护层防止卤素渗透到基底铝，从而保护制品免受腐蚀和破裂。 为了保护卤化镁层免受磨损，制品优选还包括在卤化镁层上的硬的，内聚的涂层。 优选的粘合涂层是氧化铝或氮化铝。 取决于制品的操作温度，铝制品的镁含量，以形成卤化镁层应当在约0.1％至约6％重量的范围内。 对于大于约250℃的温度，铝制品的镁含量应在制品的约0.1重量％至约1.5重量％的范围内。 镁可以存在于整个制品中，或至少在制品的下方或表面上的要被赋予耐腐蚀性的区域中。 虽然镁可与氯，氟或溴反应形成MgCl 2，MgF 2，MgBr 2或其组合的保护层，但最优选的保护层是由MgF 2形成的保护层。 为了确保铝制品中存在的镁可用于与卤素反应以形成保护层，镁含量应超过铝制品的硅含量足以确保保护层的形成。

公开(公告)号：US5496142A

公开(公告)日：1996-03-05

申请号：US94674

申请日：1993-07-20

申请人： Mark A. Fodor ,  Craig Bercaw ,  Charles Dornfest

发明人： Mark A. Fodor ,  Craig Bercaw ,  Charles Dornfest

IPC分类号： F16B1/00 ,  F16B43/00 ,  F16B39/24 ,  F16B43/02 ,  H01R4/38

CPC分类号： F16B43/004 ,  F16B2001/0064 ,  Y10S411/916

摘要： A slotted conical (non-flat) spring washer with an encircling ring provides improved spring washer performance. A split or slotted conical spring washer is encircled by a retaining ring that prevents the ends of the washer adjacent to the slot from expanding as the washer is compressed. The ends of the washer on both sides of the slot move to prevent the washer material from exceeding its yield strength. The ring restricts the radial movement of said outside diameter of the washer strip away from a center axis of the washer bore. The ring can be a counter bore in a member to be clamped, a retaining washer having an outside annular washer to act as the ring, or can be integral with the spring washer such that the slot appears not to pass completely through the washer strip.This slotted conical spring washer greatly increases the elastic spring travel available during repeated clamping cycles and during movement of clamped members due to differences in rates of thermal expansion and thermal gradients. A method for using the slotted spring washer fastening system invention assures electrical conductance and/or fluid vessel integrity under high temperatures and thermal gradients and when different materials are used in the clamped and clamping members.

摘要翻译： 带环圈的开槽锥形（非平面）弹簧垫圈提供了改进的弹簧垫圈性能。 分开或开槽的锥形弹簧垫圈由保持环包围，防止垫圈邻近槽的端部随着垫圈被压缩而膨胀。 槽的两侧的垫圈的端部移动以防止垫圈材料超过其屈服强度。 环限制了垫圈条的所述外径的径向移动远离垫圈孔的中心轴线。 环可以是待夹紧的构件中的沉孔，具有外部环形垫圈以用作环的保持垫圈，或者可以与弹簧垫圈成一体，使得狭槽看起来不能完全穿过垫圈条。 这种开槽的锥形弹簧垫圈大大增加了在重复的夹紧循环期间和由于热膨胀率和热梯度的差异而夹紧构件的运动期间可用的弹性弹簧行程。 使用开槽弹簧垫圈紧固系统的方法，确保了在高温和热梯度下的电导和/或流体容器的完整性，并且当在夹紧和夹紧构件中使用不同的材料时。

公开(公告)号：US20070028838A1

公开(公告)日：2007-02-08

申请号：US11496993

申请日：2006-07-31

申请人： Craig Bercaw ,  Dan Cossentine ,  Jack Yao ,  Tommy Lo ,  Jay DeDontney ,  Lawrence Bartholomew ,  Robert Chatham

发明人： Craig Bercaw ,  Dan Cossentine ,  Jack Yao ,  Tommy Lo ,  Jay DeDontney ,  Lawrence Bartholomew ,  Robert Chatham

IPC分类号： C23C16/00 ,  C23C14/00

CPC分类号： C23C16/4401 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45561 ,  H01L21/6719 ,  H01L21/67751

摘要： The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a gas manifold valve cluster and deposition apparatus. In some embodiments of the present invention a gas manifold valve cluster and system are provided that promotes reduced length and volumes of gas lines that will be exposed to atmosphere during cleaning which minimizes the time required to perform process chamber maintenance and therefore increase the productivity of the process chamber. In other embodiments a gas manifold valve cluster and ALD deposition apparatus are provided.

摘要翻译： 本发明一般涉及用于半导体处理的沉积设备。 更具体地，本发明的实施例涉及一种气体歧管阀组和沉积装置。 在本发明的一些实施例中，提供了一种气体歧管阀组和系统，其促进在清洁过程中将暴露于大气中的气体管线的减小的长度和体积，这使得进行处理室维护所需的时间最小化并因此提高了生产率 处理室。 在其他实施例中，提供了气体歧管阀组和ALD沉积装置。

公开(公告)号：US20060051506A1

公开(公告)日：2006-03-09

申请号：US11002365

申请日：2004-12-01

申请人： Yoshihide Senzaki ,  Craig Bercaw ,  Robert Chatham ,  Randall Higuchi ,  Eugene Lopata

发明人： Yoshihide Senzaki ,  Craig Bercaw ,  Robert Chatham ,  Randall Higuchi ,  Eugene Lopata

IPC分类号： C23C16/00

CPC分类号： H01L21/02332 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31645

摘要： A method of making high-k dielectrics is provided. The method comprises providing a substrate having a high-k dielectric layer deposited thereon in a process chamber and introducing a nitrogen containing gas into the process chamber to incorporate nitrogen into the high-k dielectric layer. In one embodiment, the nitrogen containing gas is a nitrogen plasma gas from a source disposed outside the process chamber. The nitrogen plasma gas is introduced into the process chamber at a flow rate from 0 to about 5000 sccm over a time period of about 20 to 1800 seconds. In another embodiment, the process chamber is maintained at a pressure of about 1 to 100 Torr, and at a wafer temperature in the range of about 200° C.-700° C. The high-k dielectric film pre-deposited on the substrate can be formed by atomic layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), jet vapor deposition (JVD), aerosol pyrolysis, and spin-coating.

摘要翻译： 提供了制造高k电介质的方法。 该方法包括在处理室中提供其上沉积有高k电介质层的衬底，并将含氮气体引入处理室以将氮掺入高k电介质层。 在一个实施方案中，含氮气体是来自设置在处理室外部的源的氮等离子体气体。 氮气等离子体气体在约20至1800秒的时间内以0至约5000sccm的流速引入处理室。 在另一个实施方案中，处理室保持在约1至100托的压力下，晶片温度保持在约200℃-700℃的范围内。预沉积在基板上的高k电介质膜 可以通过原子层沉积，化学气相沉积（CVD），物理气相沉积（PVD），喷射气相沉积（JVD），气溶胶热解和旋涂形成。