公开(公告)号：US06042687A

公开(公告)日：2000-03-28

申请号：US885346

申请日：1997-06-30

申请人： Vikram Singh ,  Brian McMillin ,  Tom Ni ,  Michael Barnes ,  Richard Yang

发明人： Vikram Singh ,  Brian McMillin ,  Tom Ni ,  Michael Barnes ,  Richard Yang

IPC分类号： H01J37/32 ,  H05H1/00 ,  H01L21/00

CPC分类号： H01J37/3244 ,  H01J37/321

摘要： A plasma processing system and method for processing substrates such as by chemical vapor deposition or etching. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a primary gas supply supplying a primary gas such as process gas into the chamber, a secondary gas supply supplying a secondary gas such as a substantially inert, a substrate passivating or a reactant scavenging gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the primary gas into a plasma state. The secondary gas is concentrated near the periphery of the substrate, improving etching/deposition uniformity across the substrate surface.

摘要翻译： 一种等离子体处理系统和方法，用于通过化学气相沉积或蚀刻来处理衬底。 该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件， 将诸如工艺气体的气体引入室中，将诸如基本惰性的二次气体，基底钝化或反应物清除气体的二次气体供给到腔室中，以及RF能量源，例如平面线圈，其感应耦合RF能量 通过电介质构件并进入腔室以将主气体激发成等离子体状态。 二次气体集中在衬底的周边附近，从而提高衬底表面的蚀刻/沉积均匀性。

公开(公告)号：US6013155A

公开(公告)日：2000-01-11

申请号：US885353

申请日：1997-06-30

申请人： Brian McMillin ,  Huong Nguyen ,  Michael Barnes ,  Tom Ni

发明人： Brian McMillin ,  Huong Nguyen ,  Michael Barnes ,  Tom Ni

IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C30B25/10 ,  C30B25/14 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H05H1/00

CPC分类号： H01J37/3244 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45578 ,  C23C16/507 ,  C30B25/105 ,  C30B25/14 ,  H01J37/321

摘要： A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas supply comprising one or more injector tubes extending rectilinearly in the plasma processing chamber and having one or more orifices in a sidewall for supplying gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas is supplied through orifices located outside of regions at the distal tip of the injector tubes where electric field lines are concentrated. The arrangement minimizes clogging of the orifices since the orifices are located away from areas where most build-up of process byproducts occur on the injector tube.

摘要翻译： 用于诸如半导体晶片的衬底等离子体处理的等离子体处理系统。 该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，包括一个或多个 喷射器管在等离子体处理室中直线延伸并且在侧壁中具有一个或多个孔以将气体供应到室中;以及RF能量源，例如平面线圈，其通过电介质构件将RF能量感应耦合到腔中以激励 工艺气体进入等离子体状态。 气体通过位于喷射器管的远端的区域外侧的孔提供，其中电场线集中。 该装置使得孔口的堵塞最小化，因为孔口远离喷射器管上发生过程副产物的最多的区域。

公开(公告)号：US06270862B1

公开(公告)日：2001-08-07

申请号：US09359639

申请日：1999-07-26

申请人： Brian McMillin ,  Huong Nguyen ,  Michael Barnes ,  Butch Berney

发明人： Brian McMillin ,  Huong Nguyen ,  Michael Barnes ,  Butch Berney

IPC分类号： H05H124

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  C23C16/45578 ,  C23C16/507 ,  C30B25/105 ,  C30B25/14 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate holder, the dielectric member forming a wall of the processing chamber a gas supply for supplying gas to the chamber, directed towards the substrate, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas supply may comprise a primary gas ring and a secondary gas ring for supplying gases or gas mixtures into the chamber. The gas supply may further include injectors attached to the primary gas ring which inject gas into the chamber, directed toward the substrate. The plasma processing system may also include a cooling mechanism for cooling the primary gas ring during processing.

摘要翻译： 用于诸如化学气相沉积的工艺的等离子体处理系统包括等离子体处理室，用于在处理室内支撑衬底的衬底保持器，具有面向衬底保持器的内表面的电介质构件，形成处理壁的电介质构件 将用于向腔室供应气体的气体供给，朝向衬底，以及诸如平面线圈的RF能量源，其将RF能量感应耦合通过电介质构件并进入腔室，以将处理气体激励成等离子体状态。 气体供应可以包括用于将气体或气体混合物供应到室中的初级气体环和次级气体环。 气体供应还可以包括连接到主气环的喷射器，其将气体注入到腔室中，指向基底。 等离子体处理系统还可以包括用于在处理期间冷却主气环的冷却机构。

公开(公告)号：US06626185B2

公开(公告)日：2003-09-30

申请号：US09262019

申请日：1999-03-04

申请人： Alex Demos ,  Paul Kevin Shufflebotham ,  Michael Barnes ,  Huong Nguyen ,  Brian McMillin ,  Monique Ben-Dor

发明人： Alex Demos ,  Paul Kevin Shufflebotham ,  Michael Barnes ,  Huong Nguyen ,  Brian McMillin ,  Monique Ben-Dor

IPC分类号： B08B704

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S438/905

摘要： A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

摘要翻译： 一种用于去除CVD室中的沉积物的等离子体清洁方法。 该方法包括将包含氟基气体的清洁气体引入室中。 通过将清洁气体暴露于通过使RF天线线圈中的射频电流谐振而产生的感应场而形成等离子体。 通过使室的内表面与等离子体接触足以消除内表面上的沉积物的时间来进行等离子体清洗步骤。 等离子体清洗方法的一个优点是可以高速率地对腔室进行原位清洗，从而有效地减少设备停机时间。 该方法在PECVD处理室的清洁中具有特别的适用性。

公开(公告)号：US5835334A

公开(公告)日：1998-11-10

申请号：US724005

申请日：1996-09-30

申请人： Brian McMillin ,  Michael Barnes ,  Butch Berney ,  Huong Nguyen

发明人： Brian McMillin ,  Michael Barnes ,  Butch Berney ,  Huong Nguyen

IPC分类号： H01L21/68 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.

摘要翻译： 静电卡盘包括具有用于吸引并保持位于电介质层的顶表面上的半导体晶片的背面的电介质层的电极帽和下电极。 静电卡盘被附着在卡盘内或嵌入卡盘内的电阻加热元件加热。 通过将液体冷却剂循环通过卡盘的主体来冷却静电卡盘。 冷却剂气体设置在半导体晶片的背面，以改善热转印。 反馈控制机构通过主动地控制加热和冷却功能来将卡盘以及因此的晶片维持在预定温度。

公开(公告)号：US08481403B1

公开(公告)日：2013-07-09

申请号：US12984524

申请日：2011-01-04

申请人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

发明人： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC分类号： H01L21/4757

CPC分类号： H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

摘要： Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

公开(公告)号：US08171700B2

公开(公告)日：2012-05-08

申请号：US12717672

申请日：2010-03-04

申请人： Michael Barnes

发明人： Michael Barnes

IPC分类号： E04B1/00 ,  E04C2/54

CPC分类号： B21D47/00 ,  E06B1/16 ,  Y10T29/49629

摘要： A hollow metal door using hollow structural sections with closed cross section, along with the method for making same, is described herein.

摘要翻译： 本文描述了使用具有封闭横截面的中空结构部分的中空金属门及其制造方法。

公开(公告)号：US20110201134A1

公开(公告)日：2011-08-18

申请号：US13081005

申请日：2011-04-06

申请人： Daniel J. Hoffman ,  Matthew L. Miller ,  Jang Gyoo Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

发明人： Daniel J. Hoffman ,  Matthew L. Miller ,  Jang Gyoo Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

IPC分类号： H01L21/66 ,  H01L21/3065

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。 电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得 磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

公开(公告)号：US07979217B2

公开(公告)日：2011-07-12

申请号：US12368176

申请日：2009-02-09

申请人： Paul Gottlieb ,  Michael Barnes ,  Brian William Bourke

发明人： Paul Gottlieb ,  Michael Barnes ,  Brian William Bourke

IPC分类号： G01N31/00 ,  G01N23/00 ,  G06F19/00

CPC分类号： G01N23/2206 ,  G01N23/2252 ,  H01J2237/2561

摘要： A method of analyzing spectroscopic data, the method comprising collecting spatially resolved measurement spectroscopic data of a sample for a series of measurements spots, assigning the measurement spots into a predefined set of spectral categories, based on characteristics of the spectroscopic data of the respective measurement spots, identifying groupings of the measurement spots based on their respective spectral categories and their spatial relationships, and assigning each grouping of measurement spots to a fundamental sample unit data object.

摘要翻译： 一种分析光谱数据的方法，所述方法包括：基于各个测量点的光谱数据的特性，将用于一系列测量点的样本的空间分辨测量分光数据收集到预定义的光谱类别集合中; 基于它们各自的光谱类别及其空间关系识别测量点的分组，以及将每个测量点分组分配给基本采样单元数据对象。

公开(公告)号：US20070173359A1

公开(公告)日：2007-07-26

申请号：US11340395

申请日：2006-01-26

申请人： Richard Mowery ,  Michael Barnes ,  Dale Voice

发明人： Richard Mowery ,  Michael Barnes ,  Dale Voice

IPC分类号： A63B65/02

CPC分类号： F42B6/06

摘要： A vane for an archery arrow consisting of durable, stiff material, utilizing an overall vane length of approximately two inches or less, a maximum vane height of approximately 0.6 inches or less, a straight upper and rearward extending edge from the forward point of the vane to its maximum height, and a radial rear edge from the vane's maximum height to its rearward point. The invention provides arrow steering capabilities for which longer vanes or feathers were previously required, and further promotes accuracy by reducing weight at the nock end of the arrow.

摘要翻译： 一种用于射箭箭头的叶片，其由耐用的刚性材料组成，利用大约两英寸或更小的总叶片长度，大约0.6英寸或更小的最大叶片高度，从叶片的前点的直的上部和后部延伸边缘 到其最大高度，以及从叶片的最大高度到其后方的径向后边缘。 本发明提供了先前需要更长叶片或羽毛的箭头转向能力，并且通过减小箭头的末端处的重量来进一步提高精度。