公开(公告)号：US6013155A

公开(公告)日：2000-01-11

申请号：US885353

申请日：1997-06-30

申请人： Brian McMillin ,  Huong Nguyen ,  Michael Barnes ,  Tom Ni

发明人： Brian McMillin ,  Huong Nguyen ,  Michael Barnes ,  Tom Ni

IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C30B25/10 ,  C30B25/14 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H05H1/00

CPC分类号： H01J37/3244 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45578 ,  C23C16/507 ,  C30B25/105 ,  C30B25/14 ,  H01J37/321

摘要： A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas supply comprising one or more injector tubes extending rectilinearly in the plasma processing chamber and having one or more orifices in a sidewall for supplying gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas is supplied through orifices located outside of regions at the distal tip of the injector tubes where electric field lines are concentrated. The arrangement minimizes clogging of the orifices since the orifices are located away from areas where most build-up of process byproducts occur on the injector tube.

摘要翻译： 用于诸如半导体晶片的衬底等离子体处理的等离子体处理系统。 该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，包括一个或多个 喷射器管在等离子体处理室中直线延伸并且在侧壁中具有一个或多个孔以将气体供应到室中;以及RF能量源，例如平面线圈，其通过电介质构件将RF能量感应耦合到腔中以激励 工艺气体进入等离子体状态。 气体通过位于喷射器管的远端的区域外侧的孔提供，其中电场线集中。 该装置使得孔口的堵塞最小化，因为孔口远离喷射器管上发生过程副产物的最多的区域。

公开(公告)号：US5835334A

公开(公告)日：1998-11-10

申请号：US724005

申请日：1996-09-30

申请人： Brian McMillin ,  Michael Barnes ,  Butch Berney ,  Huong Nguyen

发明人： Brian McMillin ,  Michael Barnes ,  Butch Berney ,  Huong Nguyen

IPC分类号： H01L21/68 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.

摘要翻译： 静电卡盘包括具有用于吸引并保持位于电介质层的顶表面上的半导体晶片的背面的电介质层的电极帽和下电极。 静电卡盘被附着在卡盘内或嵌入卡盘内的电阻加热元件加热。 通过将液体冷却剂循环通过卡盘的主体来冷却静电卡盘。 冷却剂气体设置在半导体晶片的背面，以改善热转印。 反馈控制机构通过主动地控制加热和冷却功能来将卡盘以及因此的晶片维持在预定温度。

公开(公告)号：US06270862B1

公开(公告)日：2001-08-07

申请号：US09359639

申请日：1999-07-26

申请人： Brian McMillin ,  Huong Nguyen ,  Michael Barnes ,  Butch Berney

发明人： Brian McMillin ,  Huong Nguyen ,  Michael Barnes ,  Butch Berney

IPC分类号： H05H124

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  C23C16/45578 ,  C23C16/507 ,  C30B25/105 ,  C30B25/14 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate holder, the dielectric member forming a wall of the processing chamber a gas supply for supplying gas to the chamber, directed towards the substrate, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas supply may comprise a primary gas ring and a secondary gas ring for supplying gases or gas mixtures into the chamber. The gas supply may further include injectors attached to the primary gas ring which inject gas into the chamber, directed toward the substrate. The plasma processing system may also include a cooling mechanism for cooling the primary gas ring during processing.

摘要翻译： 用于诸如化学气相沉积的工艺的等离子体处理系统包括等离子体处理室，用于在处理室内支撑衬底的衬底保持器，具有面向衬底保持器的内表面的电介质构件，形成处理壁的电介质构件 将用于向腔室供应气体的气体供给，朝向衬底，以及诸如平面线圈的RF能量源，其将RF能量感应耦合通过电介质构件并进入腔室，以将处理气体激励成等离子体状态。 气体供应可以包括用于将气体或气体混合物供应到室中的初级气体环和次级气体环。 气体供应还可以包括连接到主气环的喷射器，其将气体注入到腔室中，指向基底。 等离子体处理系统还可以包括用于在处理期间冷却主气环的冷却机构。

公开(公告)号：US06626185B2

公开(公告)日：2003-09-30

申请号：US09262019

申请日：1999-03-04

申请人： Alex Demos ,  Paul Kevin Shufflebotham ,  Michael Barnes ,  Huong Nguyen ,  Brian McMillin ,  Monique Ben-Dor

发明人： Alex Demos ,  Paul Kevin Shufflebotham ,  Michael Barnes ,  Huong Nguyen ,  Brian McMillin ,  Monique Ben-Dor

IPC分类号： B08B704

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S438/905

摘要： A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

摘要翻译： 一种用于去除CVD室中的沉积物的等离子体清洁方法。 该方法包括将包含氟基气体的清洁气体引入室中。 通过将清洁气体暴露于通过使RF天线线圈中的射频电流谐振而产生的感应场而形成等离子体。 通过使室的内表面与等离子体接触足以消除内表面上的沉积物的时间来进行等离子体清洗步骤。 等离子体清洗方法的一个优点是可以高速率地对腔室进行原位清洗，从而有效地减少设备停机时间。 该方法在PECVD处理室的清洁中具有特别的适用性。

公开(公告)号：US06184158B2

公开(公告)日：2001-02-06

申请号：US08772374

申请日：1996-12-23

申请人： Paul Kevin Shufflebotham ,  Brian McMillin ,  Alex Demos ,  Huong Nguyen ,  Butch Berney ,  Monique Ben-Dor

发明人： Paul Kevin Shufflebotham ,  Brian McMillin ,  Alex Demos ,  Huong Nguyen ,  Butch Berney ,  Monique Ben-Dor

IPC分类号： H01J3732

CPC分类号： H01J37/321 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/02315 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76837 ,  Y10S438/902 ,  Y10S438/906

摘要： A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

公开(公告)号：US20050255697A1

公开(公告)日：2005-11-17

申请号：US11075903

申请日：2005-03-09

申请人： Huong Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Mehul Naik

发明人： Huong Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Mehul Naik

IPC分类号： H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76813 ,  H01L21/31138 ,  H01L21/3122 ,  H01L21/76829 ,  H01L21/76835

摘要： A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to selectively etch an organosilicate layer formed on a silicon oxide stop etch layer when fabricating a damascene structure.

摘要翻译： 公开了一种在集成电路制造工艺中有选择地蚀刻有机硅酸盐层的方法。 使用含氢碳氟化合物气体有选择地蚀刻有机硅酸盐层。 当制造镶嵌结构时，含氢碳氟化合物气体可以用于选择性地蚀刻形成在氧化硅阻挡蚀刻层上的有机硅酸盐层。

公开(公告)号：US20230285456A1

公开(公告)日：2023-09-14

申请号：US17625896

申请日：2020-07-17

申请人： Fu-Sen Liang ,  Wei Wang ,  Judy Cannon ,  Alex Huang ,  Huong Nguyen ,  UNM RAINFOREST INNOVATIONS ,  CASE WESTERN RESERVE UNIVERSITY

发明人： Fu-Sen Liang ,  Wei Wang ,  Judy Cannon ,  Alex Huang ,  Huong Nguyen

IPC分类号： A61K35/17 ,  C12N15/62 ,  A61P35/00 ,  A61K47/66 ,  A61K38/17

CPC分类号： A61K35/17 ,  A61K38/177 ,  A61K47/66 ,  A61P35/00 ,  C12N15/62

摘要： A modified T cell includes exogenous polynucleotides that encode components of a therapeutic expression system. A first exogenous polynucleotide encodes a therapeutic polypeptide operably linked to a regulatory region inducible by inducer. A second exogenous polynucleotide encodes polypeptide components of a chemical induced proximity (CIP) complex. A third exogenous polynucleotide that encodes a chimeric antigen receptor that specifically binds to an antigen.

公开(公告)号：US07914287B2

公开(公告)日：2011-03-29

申请号：US11955315

申请日：2007-12-12

申请人： Huong Nguyen

发明人： Huong Nguyen

IPC分类号： G09B19/02

CPC分类号： G09B1/02 ,  G09B19/02

摘要： Numero Cubes and the Whole Number System are disclosed. In one embodiment, the system may comprise cubes, pegs, magnets, dividers, shafts, and a number placement panel. The shafts may comprise individual marks representing the base ten number system. The system may provide a method of learning mathematics through a cognitively authentic learning experience in constructing and building numbers.

摘要翻译： 数字立方体和全数字系统被公开。 在一个实施例中，系统可以包括立方体，钉，磁体，分隔件，轴和数字安置面板。 轴可以包括表示基础十号系统的单独标记。 该系统可以通过在构建和建立数字方面的认知学习体验来提供学习数学的方法。

公开(公告)号：US20070026367A1

公开(公告)日：2007-02-01

申请号：US11381964

申请日：2006-05-05

申请人： Huong Nguyen

发明人： Huong Nguyen

IPC分类号： G09B19/02

CPC分类号： G09B19/02 ,  G09B1/02

摘要： Numero Cubes and the Whole Number System are disclosed. In one embodiment, the system may comprise cubes, pegs, magnets, dividers, shafts, and a number placement panel. The shafts may comprise individual marks representing the base ten number system. The system may provide a method of learning mathematics through a cognitively authentic learning experience in constructing and building numbers.

摘要翻译： 数字立方体和全数字系统被公开。 在一个实施例中，系统可以包括立方体，钉，磁体，分隔件，轴和数字安置面板。 轴可以包括表示基础十号系统的单独标记。 该系统可以通过在构建和建立数字方面的认知正确的学习经验来提供一种学习数学的方法。

公开(公告)号：US20060149042A1

公开(公告)日：2006-07-06

申请号：US10532998

申请日：2003-11-01

申请人： Konstantin Konstantinov ,  Huong Nguyen ,  Jens Vogel

发明人： Konstantin Konstantinov ,  Huong Nguyen ,  Jens Vogel

IPC分类号： C07K1/14

CPC分类号： C07K14/55 ,  C07K1/34 ,  C07K1/36

摘要： The invention provides methods for concentrating a macromolecule from a solution comprising the macromolecule and an organic polymer by first subjecting the solution to ultrafiltration to produce a first retentate solution, then adjusting the conductivity of the first retentate solution such that any protein precipitation induced by the organic polymer is essentially prevented to produce a second retentate solution, and then subjecting the second retentate solution to ultrafiltration. In a preferred embodiment, the conductivity is adjusted by diafiltration against water, suitable diluent or buffer. Preferably, the invention pertains to the concentration of solutions of native or recombinant proteins. The invention further pertains preferably to methods for the concentration of cell culture supernatant comprising a product protein and organic polymers of the Pluronic family of block co-polymers, and more preferably comprising Pluronic F-68 block co-polymer.

摘要翻译： 本发明提供了从包含大分子和有机聚合物的溶液中浓缩高分子的方法，首先使溶液经过超滤以产生第一滞留物溶液，然后调节第一渗余溶液的电导率，使得由有机物诱导的任何蛋白质沉淀 基本上防止聚合物产生第二滞留物溶液，然后使第二滞留物溶液经过超滤。 在优选的实施方案中，通过对水，合适的稀释剂或缓冲液进行渗滤来调节电导率。 优选地，本发明涉及天然或重组蛋白质的溶液的浓度。 本发明还优选地涉及浓缩包含产物蛋白质的细胞培养上清液和Pluronic族嵌段共聚物的有机聚合物，更优选包含Pluronic F-68嵌段共聚物的方法。