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1.发明授权公开(公告)号：US06626185B2
公开(公告)日：2003-09-30
申请号：US09262019
申请日：1999-03-04
申请人： Alex Demos , Paul Kevin Shufflebotham , Michael Barnes , Huong Nguyen , Brian McMillin , Monique Ben-Dor
发明人： Alex Demos , Paul Kevin Shufflebotham , Michael Barnes , Huong Nguyen , Brian McMillin , Monique Ben-Dor
IPC分类号： B08B704
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S438/905
摘要： A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.
摘要翻译： 一种用于去除CVD室中的沉积物的等离子体清洁方法。 该方法包括将包含氟基气体的清洁气体引入室中。 通过将清洁气体暴露于通过使RF天线线圈中的射频电流谐振而产生的感应场而形成等离子体。 通过使室的内表面与等离子体接触足以消除内表面上的沉积物的时间来进行等离子体清洗步骤。 等离子体清洗方法的一个优点是可以高速率地对腔室进行原位清洗，从而有效地减少设备停机时间。 该方法在PECVD处理室的清洁中具有特别的适用性。
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公开(公告)号：US06184158B2
公开(公告)日：2001-02-06
申请号：US08772374
申请日：1996-12-23
申请人： Paul Kevin Shufflebotham , Brian McMillin , Alex Demos , Huong Nguyen , Butch Berney , Monique Ben-Dor
发明人： Paul Kevin Shufflebotham , Brian McMillin , Alex Demos , Huong Nguyen , Butch Berney , Monique Ben-Dor
IPC分类号： H01J3732
CPC分类号： H01J37/321 , C23C16/402 , C23C16/507 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02301 , H01L21/02315 , H01L21/02362 , H01L21/31612 , H01L21/76837 , Y10S438/902 , Y10S438/906
摘要： A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.
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公开(公告)号：US06888040B1
公开(公告)日：2005-05-03
申请号：US08671684
申请日：1996-06-28
CPC分类号： C23C16/4412 , B01D53/70 , B01D2257/2066 , B01D2259/818 , Y02C20/30
摘要： An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.
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4.发明授权Method and apparatus for abatement of reaction products from a vacuum processing chamber 失效从真空处理室中减少反应产物的方法和装置公开(公告)号：US08664560B2
公开(公告)日：2014-03-04
申请号：US11017637
申请日：2004-12-22
IPC分类号： B23K10/00
CPC分类号： C23C16/4412 , B01D53/70 , B01D2257/2066 , B01D2259/818 , Y02C20/30
摘要： An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.
摘要翻译： 用于减轻来自真空处理室的反应产物的示例性方法和装置包括与真空处理室流体连通的反应室，围绕反应室设置的线圈以及用于向线圈供应RF能量的电源。 线圈在反应室中产生等离子体，其有效地分解来自真空处理室的稳定的反应产物，例如对全球变暖有显着贡献的全氟化碳（PFCs）和氢氟烃（HFCs）。 根据替代实施例，等离子体可以通过设置在反应室中的格栅或线圈垂直于来自真空处理室的反应产物流而产生。
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公开(公告)号：US5805408A
公开(公告)日：1998-09-08
申请号：US577265
申请日：1995-12-22
IPC分类号： B25J15/06 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831
摘要： An electrostatic clamping apparatus with lip seal for holding substrates in a vacuum processing chamber. The apparatus includes an electrostatic clamp, a sealing member surrounding the electrostatic clamp, and an edge ring surrounding the sealing member and holding the sealing member in place against the electrostatic clamp. The sealing member provides a seal between the electrostatic clamp and the substrate. This seal prevents the leakage of temperature control gas into the processing chamber and prevents process gas from reaching the electrostatic clamp and/or causing arcing in the chamber. In addition, by leaving a small gap between the sealing surface of the resilient sealing member and the edge of the electrostatic clamp, a helium distribution channel is created outside the electrostatic clamp top surface thus maximizing available contact area between the substrate and the clamp.
摘要翻译： 具有用于将基板保持在真空处理室中的唇形密封件的静电夹紧装置。 该装置包括静电夹持器，围绕静电夹具的密封构件以及围绕密封构件的边缘环，并将密封构件保持在静电夹具的适当位置上。 密封构件在静电夹和衬底之间提供密封。 该密封件防止温度控制气体泄漏到处理室中，并防止工艺气体到达静电夹持器和/或引起腔室中的电弧。 此外，通过在弹性密封构件的密封表面和静电夹具的边缘之间留下小的间隙，在静电夹具顶表面的外部形成氦分配通道，从而最大化衬底和夹具之间的可用接触面积。
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6.发明授权Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors 失效真空处理器中介电工件的静电夹紧方法和装置
公开(公告)号：US5847918A
公开(公告)日：1998-12-08
申请号：US542959
申请日：1995-10-13
IPC分类号： B65G49/06 , B25J15/06 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： A dielectric workpiece is clamped to a holder in a vacuum plasma processor chamber by applying the plasma to a surface of the workpiece exposed to the plasma simultaneously with applying a relatively high voltage to an electrode on the holder. The electrode is in close proximity to a portion of the workpiece not exposed to the plasma so (1) the electrode is at a voltage substantially different from the plasma, (2) electrostatic charge is applied to the exposed surface by the plasma, and (3) an electrical conducting path is provided via the plasma from the electrostatic charge to a terminal at a potential substantially different from the voltage applied to the electrode. Sufficient electrostatic clamping force is applied through the thickness of the workpiece by a voltage difference between the DC voltage applied to a single electrode and charge applied by the plasma to the exposed face to hold the substrate on the holder.
摘要翻译： 通过将等离子体施加到暴露于等离子体的工件的表面，同时向保持器上的电极施加相对高的电压，将电介质工件夹持在真空等离子体处理器室中的保持器上。 电极非常接近未暴露于等离子体的工件的一部分，所以（1）电极处于与等离子体基本不同的电压，（2）静电电荷通过等离子体施加到暴露的表面，和（ 3）通过等离子体从静电电荷向终端提供与施加到电极的电压基本不同的电位的导电路径。 通过施加到单个电极的DC电压和由等离子体施加的电荷与暴露面之间的电压差，通过工件的厚度施加足够的静电夹持力，以将衬底保持在保持器上。
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公开(公告)号：US5711998A
公开(公告)日：1998-01-27
申请号：US656673
申请日：1996-05-31
CPC分类号： H01L21/3003
摘要： A method of hydrogenating poly-Si in an electrical device including the step of placing a substrate having a poly-Si component in a radio frequency induced low pressure, high density plasma reactor. The method further includes the step of introducing into the radio frequency induced low pressure, high density plasma reactor a gas including at least hydrogen or deuterium. The hydrogenation of the poly-Si component is accomplished by striking a plasma in the radio frequency induced low pressure, high density plasma reactor under conditions that promote hydrogenation of the poly-Si component.
摘要翻译： 一种在电气装置中氢化多晶硅的方法，包括将具有多晶硅成分的衬底放置在射频诱导的低压，高密度等离子体反应器中的步骤。 该方法还包括将至少包含氢或氘的气体引入射频感应低压高密度等离子体反应器的步骤。 多硅组分的氢化通过在促进多Si组分的氢化的条件下在射频诱导的低压，高密度等离子体反应器中击打等离子体来实现。
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公开(公告)号：US5669977A
公开(公告)日：1997-09-23
申请号：US577520
申请日：1995-12-22
IPC分类号： H01L21/677 , G03F7/20 , H01L21/687 , C23C16/00
CPC分类号： H01L21/68742 , G03F7/707 , G03F7/70708 , Y10S156/914
摘要： A lift pin arrangement for use in semiconductor processing apparatus wherein the lift pins are of a shape memory alloy. The lift pins exhibit superelasticity and/or shape memory effects which allows the lift pins to withstand substantial bending forces without permanent deformation thereof, and in the case where the lift pins become deformed it is possible to restraighten the lift pins simply by heating the lift pins to an appropriate temperature.
摘要翻译： 一种用于半导体加工设备的提升销布置，其中提升销是形状记忆合金。 提升销显示超弹性和/或形状记忆效应，其允许提升销承受相当大的弯曲力而不会永久变形，并且在提升销变形的情况下，可以简单地通过加热升降销来限制升降销 达到适当的温度。
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公开(公告)号：US6106678A
公开(公告)日：2000-08-22
申请号：US83133
申请日：1998-05-22
IPC分类号： C23C16/04 , C23C16/40 , C23C16/503 , C23C16/511 , H01L21/316 , H01L21/762 , C23C14/34
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/402 , C23C16/503 , C23C16/511 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76224
摘要： A gap filling process of depositing a film of SiO.sub.2 in gaps on a substrate by generating plasma in a process chamber by energizing gas containing silicon, oxygen and a heavy noble gas such as xenon or krypton. The gaps can have widths below 0.5 .mu.m and aspect ratios higher than 1.5:1. A substrate is supported on a substrate support wherein a gas passage supplies a temperature control gas into a space between opposed surfaces of the substrate and the substrate support, and the film is grown in the gaps on the substrate by contacting the substrate with the plasma. The silicon reactant can be SiH.sub.4 and the oxygen reactant can be pure oxygen gas supplied by O.sub.2 /SiH.sub.4 ratio of .ltoreq.1.05. The plasma can be a high density plasma produced in an ECR or TCP reactor and the substrate can be a silicon wafer including aluminum conductor lines.
摘要翻译： 一种间隙填充工艺，其通过在含有硅，氧气和重稀有气体如氙或氪气的气体中通过在处理室中产生等离子体而在衬底上的间隙中沉积SiO 2膜。 间隙可以具有低于0.5μm的宽度和高于1.5:1的纵横比。 基板被支撑在基板支撑件上，其中气体通道将温度控制气体提供到基板的相对表面和基板支撑件之间的空间中，并且通过使基板与等离子体接触而在基板上的间隙中生长膜。 硅反应物可以是SiH 4，氧反应物可以是通过O 2 / SiH 4比率
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公开(公告)号：US6086246A
公开(公告)日：2000-07-11
申请号：US85149
申请日：1998-05-26
CPC分类号： G01J5/041
摘要： A plasma resistant lightpipe is used in a pyrometric temperature measurement system to measure the temperature of a substrate in a reaction chamber. The plasma resistant lightpipe includes two lightpipe elements. The first lightpipe element, which may be a sapphire rod or aluminum nitride rod, is positioned within a backside gas delivery path to the chamber. The first lightpipe element is resistant to etching caused by reactive plasmas or gases used within the chamber, such as fluorine. The second lightpipe, which is a quartz rod, is positioned beneath the first lightpipe element such that the two lightpipe elements are optically coupled. The first lightpipe element may be directly mounted in the base plate or electrostatic chuck of the pedestal assembly or directly mounted in a plug, which is then positioned within the base plate or electrostatic chuck. The first lightpipe element is securely mounted into the base plate, electrostatic chuck, or the plug by shrink and/or interference fitting, by spring pins or set screws. In one embodiment, the interface between the first lightpipe element and the second lightpipe element is set in a plane defined by the top surface of the seal plate. Thus, there is little danger of damaging the lightpipe elements during the removal of the electrostatic chuck and base plate.
摘要翻译： 在高温测量系统中使用耐等离子体光管来测量反应室中的基底的温度。 耐等离子体光管包括两个光管元件。 可以是蓝宝石棒或氮化铝棒的第一光管元件位于到腔室的后侧气体输送路径内。 第一光管元件抵抗由室内使用的反应性等离子体或气体引起的蚀刻，例如氟。 作为石英棒的第二光管位于第一光管元件的下方，使得两个光管元件光学耦合。 第一光管元件可以直接安装在基座组件的基板或静电卡盘中，或者直接安装在插头中，然后定位在基板或静电卡盘内。 第一个光管元件通过弹簧销或固定螺钉通过收缩和/或干涉配合牢固地安装到基板，静电卡盘或插头中。 在一个实施例中，将第一光管元件和第二光管元件之间的界面设置在由密封板的顶表面限定的平面中。 因此，在去除静电卡盘和基板期间几乎没有损坏光管元件的危险。
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