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    Aluminum contact integration on cobalt silicide junction
    1.
    发明授权
    Aluminum contact integration on cobalt silicide junction 失效
    硅化钴接头上的铝接触集成

    公开(公告)号：US07867900B2

    公开(公告)日：2011-01-11

    申请号：US12240816

    申请日：2008-09-29

    申请人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    发明人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

    摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

    ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION
    2.
    发明申请
    ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION 失效
    铝接点集成在钴硅酮结上

    公开(公告)号：US20090087983A1

    公开(公告)日：2009-04-02

    申请号：US12240816

    申请日：2008-09-29

    申请人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    发明人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

    摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

    Aluminum sputtering while biasing wafer
    3.
    发明授权
    Aluminum sputtering while biasing wafer 失效
    铝溅射同时偏置晶圆

    公开(公告)号：US07378002B2

    公开(公告)日：2008-05-27

    申请号：US11209328

    申请日：2005-08-23

    申请人： Wei Ti Lee ,  Ted Guo ,  Sang-Ho Yu

    发明人： Wei Ti Lee ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： C23C14/35 ,  H01L21/44

    CPC分类号： C23C14/185 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345

    摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.

    摘要翻译： 一种铝溅射工艺，包括RF偏置晶片和两步铝填充工艺和装置，用于在两个明显不同的条件下，优选在两个不同的等离子体溅射反应器中通过溅射将铝填充到窄通孔中。 第一步包括将大部分电离铝原子溅射到相对冷的晶片上，例如保持在小于150℃，并且相当高的偏压以将铝原子吸引到窄孔中并蚀刻突出端。 第二步包括在相对温暖的晶片上的更中性的溅射，例如 保持在大于250℃，并且基本上无偏差以提供更多的各向同性和均匀的铝通量。 围绕铝靶的背面扫描的磁控管可能在第一步骤中相对较小并且不平衡，而在第二步中相对较大且平衡。

    Aluminum sputtering while biasing wafer
    4.
    发明申请
    Aluminum sputtering while biasing wafer 失效
    铝溅射同时偏置晶圆

    公开(公告)号：US20070045103A1

    公开(公告)日：2007-03-01

    申请号：US11209328

    申请日：2005-08-23

    申请人： Wei Lee ,  Ted Guo ,  Sang-Ho Yu

    发明人： Wei Lee ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： C23C14/00

    CPC分类号： C23C14/185 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345

    摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.

    摘要翻译： 一种铝溅射工艺，包括RF偏置晶片和两步铝填充工艺和装置，用于在两个明显不同的条件下，优选在两个不同的等离子体溅射反应器中通过溅射将铝填充到窄通孔中。 第一步包括将大部分电离铝原子溅射到相对冷的晶片上，例如保持在小于150℃，并且相当高的偏压以将铝原子吸引到窄孔中并蚀刻突出端。 第二步包括在相对温暖的晶片上的更中性的溅射，例如 保持在大于250℃，并且基本上无偏差以提供更多的各向同性和均匀的铝通量。 围绕铝靶的背面扫描的磁控管可能在第一步骤中相对较小并且不平衡，而在第二步中相对较大且平衡。

    Display device and method for driving the same
    7.
    发明授权
    Display device and method for driving the same 有权
    显示装置及其驱动方法

    公开(公告)号：US08654155B2

    公开(公告)日：2014-02-18

    申请号：US12458555

    申请日：2009-07-15

    申请人： Sang-Ho Yu ,  Kyoung-Don Woo ,  Young-Jun Hong

    发明人： Sang-Ho Yu ,  Kyoung-Don Woo ,  Young-Jun Hong

    IPC分类号： G09G5/10

    CPC分类号： G09G3/20 ,  G09G3/006 ,  G09G5/003 ,  G09G2320/0276 ,  G09G2320/0673 ,  G09G2320/08 ,  G09G2330/026 ,  G09G2330/028 ,  G09G2330/12

    摘要： Disclosed is a display device including a first storage unit having driving data for driving a display panel and a first check SUM data on the driving data stored therein, a second storage unit for retrieving the driving data and the first check SUM data from the first storage unit and storing the driving data and the check SUM data in response to the instruction of a ROM interface, and a data error detection/correction unit generating a second check SUM data with reference to the driving data stored in the second storage unit.

    摘要翻译： 公开了一种显示装置，包括具有用于驱动显示面板的驱动数据的第一存储单元和存储在其中的驾驶数据的第一检查SUM数据，用于从第一存储器检索驾驶数据和第一检查SUM数据的第二存储单元 单元，并且响应于ROM接口的指令存储驾驶数据和检查SUM数据;以及数据错误检测/校正单元，参考存储在第二存储单元中的驾驶数据产生第二检查SUM数据。

    Organic electroluminescent display device and method of driving the same
    8.
    发明授权
    Organic electroluminescent display device and method of driving the same 有权
    有机电致发光显示装置及其驱动方法

    公开(公告)号：US09240139B2

    公开(公告)日：2016-01-19

    申请号：US12591310

    申请日：2009-11-16

    申请人： Hak-Su Kim ,  Sang-Ho Yu ,  Won-Kyu Ha

    发明人： Hak-Su Kim ,  Sang-Ho Yu ,  Won-Kyu Ha

    IPC分类号： G09G5/00 ,  G09G3/30 ,  G09G3/32

    CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0224 ,  G09G2310/0251 ,  G09G2320/0233 ,  G09G2320/0252 ,  G09G2320/043

    摘要： An organic electroluminescent display device includes a plurality of pixels, each one of the plurality of pixels including: a switching transistor that is connected to a gate line and a data line; a driving transistor, wherein a data voltage of the data line passing through the switching transistor is reflected into a gate of the driving transistor; a sampling transistor that samples a threshold voltage of the driving transistor, wherein a gate of the sampling transistor is connected to a control line, and the sampled threshold voltage is reflected into the gate of the driving transistor; an initializing transistor, wherein a gate of the initializing transistor is connected to a previous or next gate line, and an initialization voltage passing through the initializing transistor is reflected into the gate of the driving transistor; and an organic light emitting diode that is connected to the driving transistor, wherein a driving current of the organic light emitting diode is adjusted according to a voltage of the gate of the driving transistor.

    摘要翻译： 有机电致发光显示装置包括多个像素，所述多个像素中的每一个包括：连接到栅极线和数据线的开关晶体管; 驱动晶体管，其中通过所述开关晶体管的数据线的数据电压被反射到所述驱动晶体管的栅极; 采样晶体管，其对所述驱动晶体管的阈值电压进行采样，其中所述采样晶体管的栅极连接到控制线，并且所述采样阈值电压被反射到所述驱动晶体管的栅极中; 初始化晶体管，其中初始化晶体管的栅极连接到先前或下一个栅极线，并且通过初始化晶体管的初始化电压被反射到驱动晶体管的栅极中; 以及连接到所述驱动晶体管的有机发光二极管，其中根据所述驱动晶体管的栅极的电压来调节所述有机发光二极管的驱动电流。

    Process for forming cobalt-containing materials
    9.
    发明授权
    Process for forming cobalt-containing materials 失效
    用于形成含钴材料的方法

    公开(公告)号：US08110489B2

    公开(公告)日：2012-02-07

    申请号：US11733929

    申请日：2007-04-11

    申请人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

    发明人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-Ho Yu ,  Kevin Moraes ,  See-Eng Phan

    IPC分类号： H01L21/28

    CPC分类号： C23C16/42 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

    摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

    摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

    SELECTIVE COBALT DEPOSITION ON COPPER SURFACES
    10.
    发明申请
    SELECTIVE COBALT DEPOSITION ON COPPER SURFACES 审中-公开
    选择性钴沉积铜表面

    公开(公告)号：US20090269507A1

    公开(公告)日：2009-10-29

    申请号：US12111921

    申请日：2008-04-29

    申请人： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

    发明人： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

    IPC分类号： B05D3/04 ,  B05D5/12 ,  C23C16/44

    CPC分类号： C23C16/16 ,  C23C16/0218 ,  C23C16/18 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

    摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

    摘要翻译： 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 在一个实施例中，提供了一种用于封盖衬底上的铜表面的方法，其包括将衬底定位在处理室内，其中衬底含有受污染的铜表面和电介质表面，将形成的污染的铜表面暴露于还原剂 在预处理过程中的铜表面，将基底暴露于钴前体气体，以在铜表面上选择性地形成钴覆盖层，同时在气相沉积工艺期间暴露介电表面，并且在钴上沉积介电阻挡层 覆盖层和电介质表面。 在另一个实施方案中，沉积处理循环包括进行气相沉积工艺和随后的后处理工艺，该沉积处理循环可以重复以形成多个钴覆盖层。