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    Methods and apparatus for forming a titanium nitride layer
    1.
    发明申请
    Methods and apparatus for forming a titanium nitride layer 审中-公开
    用于形成氮化钛层的方法和装置

    公开(公告)号：US20060110533A1

    公开(公告)日：2006-05-25

    申请号：US11281163

    申请日：2005-11-17

    申请人： Wan-Goo Hwang ,  Myeong-Jin Kim ,  Seung-Ki Chae ,  Hyun-Seok Lim ,  Kyoung-Ho Jang

    发明人： Wan-Goo Hwang ,  Myeong-Jin Kim ,  Seung-Ki Chae ,  Hyun-Seok Lim ,  Kyoung-Ho Jang

    IPC分类号： C23C16/00 ,  B05C11/00

    CPC分类号： H01L21/67109 ,  C23C16/34 ,  C23C16/45546 ,  H01L21/28556 ,  H01L21/67757

    摘要： A method of forming a titanium nitride layer by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein a first source gas including a titanium precursor is provided onto substrates loaded in a process chamber for a first time period; a first purge gas is introduced into the process chamber for a second time period shorter than the first time period; a second source gas including nitrogen is provided onto the substrates for a third time period substantially identical to the first time period; and, a second purge gas is introduced into the process chamber for a fourth time period substantially identical to the second time period. Titanium nitride layers having uniform thickness and good step coverage may thus be formed while realizing a greatly reduced manufacturing time.

    摘要翻译： 描述了通过使用间歇式立式反应炉的原子层沉积工艺形成氮化钛层的方法，其中包括钛前体的第一源气体在第一时间段内被装载到处理室中的基板上; 将第一吹扫气体引入处理室中比第一时间段短的第二时间段; 包括氮的第二源气体在基板上提供与第一时间段基本相同的第三时间段; 并且将第二吹扫气体与第二时间段基本相同的第四时间段引入到处理室中。 因此可以在实现大大缩短的制造时间的同时形成具有均匀厚度和良好阶梯覆盖的氮化钛层。

    Methods and apparatus for forming a titanium nitride layer
    4.
    发明申请
    Methods and apparatus for forming a titanium nitride layer 审中-公开
    用于形成氮化钛层的方法和装置

    公开(公告)号：US20060110534A1

    公开(公告)日：2006-05-25

    申请号：US11281774

    申请日：2005-11-17

    申请人： Wan-Goo Hwang ,  Seung-Ki Chae ,  Young-Kyou Park ,  Jung-Il Ahn ,  Kyoung-Ho Jang ,  Myeong-Jin Kim

    发明人： Wan-Goo Hwang ,  Seung-Ki Chae ,  Young-Kyou Park ,  Jung-Il Ahn ,  Kyoung-Ho Jang ,  Myeong-Jin Kim

    IPC分类号： C23C16/00 ,  B05C11/00

    CPC分类号： C23C16/34 ,  C23C16/45527 ,  C23C16/45546

    摘要： A method of forming titanium nitride layers by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein the titanium nitride layers are formed on one or more substrates in accordance with a reaction between a first source gas including TiCl4 gas and a second source gas including an NH3 gas. After forming the titanium nitride layers, chlorine remaining in the titanium nitride layers is removed using a treatment gas which includes an NH3 gas. The substrates are revolved by a predetermined rotation angle between repeated titanium nitride layer formation cycles. The process of forming the titanium nitride layers and rotating the substrates is alternately repeated resulting in titanium nitride layers having substantially uniform thicknesses and low specific resistance.

    摘要翻译： 其中描述了通过使用分批式立式反应炉的原子层沉积工艺形成氮化钛层的方法，其中根据包括TiCl 3的第一源气体之间的反应在一个或多个衬底上形成氮化钛层， 4气体和包括NH 3气体的第二源气体。 在形成氮化钛层之后，使用包括NH 3气体的处理气体除去残留在氮化钛层中的氯。 在重复的氮化钛层形成循环之间，基板旋转预定的旋转角度。 交替地重复形成氮化钛层和旋转衬底的过程，导致具有基本均匀的厚度和低电阻率的氮化钛层。

    Etching method
    5.
    发明授权
    Etching method 有权
    蚀刻方法

    公开(公告)号：US07497963B2

    公开(公告)日：2009-03-03

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： B44C1/22

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

    Etching method
    6.
    发明申请
    Etching method 有权
    蚀刻方法

    公开(公告)号：US20050153553A1

    公开(公告)日：2005-07-14

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768 ,  H01L23/522

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

    Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the same
    8.
    发明申请
    Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the same 审中-公开
    制造半晶粒硅层的方法及使用其制造半导体器件的方法

    公开(公告)号：US20060160337A1

    公开(公告)日：2006-07-20

    申请号：US11323999

    申请日：2005-12-29

    申请人： Young-Jin Kim ,  Hyeon-Deok Lee ,  Seok-Woo Nam ,  Yong-Jae Lee ,  Hyun-Seok Lim ,  Wan-Goo Hwang ,  Jin-Il Lee ,  Jung-Hwan Oh

    发明人： Young-Jin Kim ,  Hyeon-Deok Lee ,  Seok-Woo Nam ,  Yong-Jae Lee ,  Hyun-Seok Lim ,  Wan-Goo Hwang ,  Jin-Il Lee ,  Jung-Hwan Oh

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L28/84 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

    摘要： In a method of manufacturing a capacitor including a hemispherical grain (HSG) silicon layer, after forming a storage electrode electrically coupled to a contact region of a substrate, the HSG silicon layer is formed on the storage electrode by providing a first gas including silicon and a second gas onto a surface of the storage electrode with a volume ratio of about 1.0:0.1 to about 1.0:5.0. A dielectric layer and a plate electrode are sequentially formed on the HSG silicon layer. A grain size of the HSG silicon layer may be easily adjusted and abnormal growths of the HSG at a lower portion of the storage electrode may be suppressed. Therefore, the HSG silicon layer may be uniformly formed on the storage electrode, and a structural stability of the storage electrode may be improved to prevent electrical defects of the capacitor.

    摘要翻译： 在制造包括半球形晶粒（HSG）硅层的电容器的方法中，在形成与基板的接触区域电耦合的存储电极之后，通过提供包括硅的第一气体和存储电极形成HSG硅层， 第二气体以约1.0:0.1至约1.0:5.0的体积比存储在存储电极的表面上。 在HSG硅层上依次形成电介质层和平板电极。 可以容易地调节HSG硅层的晶粒尺寸，并且可以抑制存储电极下部的HSG的异常生长。 因此，HSG硅层可以均匀地形成在存储电极上，并且可以改善存储电极的结构稳定性，以防止电容器的电缺陷。