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    Methods and apparatus for forming a titanium nitride layer
    1.
    发明申请
    Methods and apparatus for forming a titanium nitride layer 审中-公开
    用于形成氮化钛层的方法和装置

    公开(公告)号：US20060110533A1

    公开(公告)日：2006-05-25

    申请号：US11281163

    申请日：2005-11-17

    申请人： Wan-Goo Hwang ,  Myeong-Jin Kim ,  Seung-Ki Chae ,  Hyun-Seok Lim ,  Kyoung-Ho Jang

    发明人： Wan-Goo Hwang ,  Myeong-Jin Kim ,  Seung-Ki Chae ,  Hyun-Seok Lim ,  Kyoung-Ho Jang

    IPC分类号： C23C16/00 ,  B05C11/00

    CPC分类号： H01L21/67109 ,  C23C16/34 ,  C23C16/45546 ,  H01L21/28556 ,  H01L21/67757

    摘要： A method of forming a titanium nitride layer by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein a first source gas including a titanium precursor is provided onto substrates loaded in a process chamber for a first time period; a first purge gas is introduced into the process chamber for a second time period shorter than the first time period; a second source gas including nitrogen is provided onto the substrates for a third time period substantially identical to the first time period; and, a second purge gas is introduced into the process chamber for a fourth time period substantially identical to the second time period. Titanium nitride layers having uniform thickness and good step coverage may thus be formed while realizing a greatly reduced manufacturing time.

    摘要翻译： 描述了通过使用间歇式立式反应炉的原子层沉积工艺形成氮化钛层的方法，其中包括钛前体的第一源气体在第一时间段内被装载到处理室中的基板上; 将第一吹扫气体引入处理室中比第一时间段短的第二时间段; 包括氮的第二源气体在基板上提供与第一时间段基本相同的第三时间段; 并且将第二吹扫气体与第二时间段基本相同的第四时间段引入到处理室中。 因此可以在实现大大缩短的制造时间的同时形成具有均匀厚度和良好阶梯覆盖的氮化钛层。

    Methods and apparatus for forming a titanium nitride layer
    4.
    发明申请
    Methods and apparatus for forming a titanium nitride layer 审中-公开
    用于形成氮化钛层的方法和装置

    公开(公告)号：US20060110534A1

    公开(公告)日：2006-05-25

    申请号：US11281774

    申请日：2005-11-17

    申请人： Wan-Goo Hwang ,  Seung-Ki Chae ,  Young-Kyou Park ,  Jung-Il Ahn ,  Kyoung-Ho Jang ,  Myeong-Jin Kim

    发明人： Wan-Goo Hwang ,  Seung-Ki Chae ,  Young-Kyou Park ,  Jung-Il Ahn ,  Kyoung-Ho Jang ,  Myeong-Jin Kim

    IPC分类号： C23C16/00 ,  B05C11/00

    CPC分类号： C23C16/34 ,  C23C16/45527 ,  C23C16/45546

    摘要： A method of forming titanium nitride layers by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein the titanium nitride layers are formed on one or more substrates in accordance with a reaction between a first source gas including TiCl4 gas and a second source gas including an NH3 gas. After forming the titanium nitride layers, chlorine remaining in the titanium nitride layers is removed using a treatment gas which includes an NH3 gas. The substrates are revolved by a predetermined rotation angle between repeated titanium nitride layer formation cycles. The process of forming the titanium nitride layers and rotating the substrates is alternately repeated resulting in titanium nitride layers having substantially uniform thicknesses and low specific resistance.

    摘要翻译： 其中描述了通过使用分批式立式反应炉的原子层沉积工艺形成氮化钛层的方法，其中根据包括TiCl 3的第一源气体之间的反应在一个或多个衬底上形成氮化钛层， 4气体和包括NH 3气体的第二源气体。 在形成氮化钛层之后，使用包括NH 3气体的处理气体除去残留在氮化钛层中的氯。 在重复的氮化钛层形成循环之间，基板旋转预定的旋转角度。 交替地重复形成氮化钛层和旋转衬底的过程，导致具有基本均匀的厚度和低电阻率的氮化钛层。

    Etching method
    7.
    发明授权
    Etching method 有权
    蚀刻方法

    公开(公告)号：US07497963B2

    公开(公告)日：2009-03-03

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： B44C1/22

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

    Etching method
    8.
    发明申请
    Etching method 有权
    蚀刻方法

    公开(公告)号：US20050153553A1

    公开(公告)日：2005-07-14

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768 ,  H01L23/522

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120196439A1

    公开(公告)日：2012-08-02

    申请号：US13289107

    申请日：2011-11-04

    申请人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

    发明人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

    IPC分类号： H01L21/28

    CPC分类号： H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

    摘要翻译： 在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。