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    LITHOGRAPHY APPARATUS HAVING DUAL RETICLE EDGE MASKING ASSEMBLIES AND METHOD OF USE
    2.
    发明申请
    LITHOGRAPHY APPARATUS HAVING DUAL RETICLE EDGE MASKING ASSEMBLIES AND METHOD OF USE 有权
    具有双重边缘屏蔽装置的平面设备及其使用方法

    公开(公告)号：US20130293857A1

    公开(公告)日：2013-11-07

    申请号：US13461500

    申请日：2012-05-01

    申请人： Tung-Li WU ,  Chin-Hsiang LIN ,  Heng-Hsin LIU ,  Jui-Chun PENG

    发明人： Tung-Li WU ,  Chin-Hsiang LIN ,  Heng-Hsin LIU ,  Jui-Chun PENG

    IPC分类号： G03B27/50

    CPC分类号： G03F7/70725 ,  G03F7/70066 ,  G03F7/70283 ,  G03F7/70341 ,  G03F7/70641

    摘要： A lithography apparatus includes at least two reticle edge masking assemblies (REMAs). The lithography apparatus further includes a light source configured to emit a light beam having a wavelength and a beam separating element configured to divide the light beam into more than one collimated light beam. Each REMA is positioned to receive one of the more than one collimating light beams and each REMA comprises a movable slit for passing the one collimated light beam therethrough. The lithography apparatus further includes at least one mask having a pattern, where the at least one mask is configured to receive light from at least one of the REMA and a projection lens configured to receive light from the at least one mask. A method of using a lithography apparatus is also discussed.

    摘要翻译： 光刻设备包括至少两个掩模版边缘掩蔽组件（REMA）。 光刻设备还包括被配置为发射具有波长的光束的光源和被配置为将光束分成多于一个准直光束的光束分离元件。 每个REMA被定位成接收多于一个准直光束中的一个，并且每个REMA包括用于使一个准直光束通过的可移动狭缝。 光刻设备还包括具有图案的至少一个掩模，其中所述至少一个掩模被配置为接收来自REMA和配置为接收来自所述至少一个掩模的光的投影透镜中的至少一个的光。 还讨论了使用光刻设备的方法。

    ENHANCED SCANNER THROUGHPUT SYSTEM AND METHOD
    3.
    发明申请
    ENHANCED SCANNER THROUGHPUT SYSTEM AND METHOD 有权
    增强扫描仪通过系统和方法

    公开(公告)号：US20130309612A1

    公开(公告)日：2013-11-21

    申请号：US13473695

    申请日：2012-05-17

    申请人： Yu-Mei LIU ,  Chin-Hsiang LIN ,  Heng-Hsin LIU ,  Heng-Jen LEE ,  I-Hsiung HUANG ,  Chih-Wei LIN

    发明人： Yu-Mei LIU ,  Chin-Hsiang LIN ,  Heng-Hsin LIU ,  Heng-Jen LEE ,  I-Hsiung HUANG ,  Chih-Wei LIN

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70358

    摘要： A method and system to improve scanner throughput is provided. An image from a reticle is projected onto a substrate using a continuous linear scanning procedure in which an entire column of die or cells of die is scanned continuously, i.e. without stepping to a different location. Each scan includes translating a substrate with respect to a fixed beam. While the substrate is translated, the reticle is also translated. When a first die or cell of die is projected onto the substrate, the reticle translates along a direction opposite the scan direction and as the scan continues along the same direction, the reticle then translates in the opposite direction of the substrate thereby forming an inverted pattern on the next die or cell. The time associated with exposing the substrate is minimized as the stepping operation only occurs after a complete column of cells is scanned.

    摘要翻译： 提供了一种提高扫描仪吞吐量的方法和系统。 使用连续线性扫描程序将来自掩模版的图像投影到基板上，其中连续扫描整列管芯或裸片的单元，即不进入不同的位置。 每个扫描包括相对于固定光束平移衬底。 当底物被翻译时，掩模版也被翻译。 当模具的第一裸片或裸片投影到衬底上时，标线沿着与扫描方向相反的方向平移，并且随着扫描沿着相同的方向继续，标线片然后在衬底的相反方向上平移，从而形成倒置图案 在下一个死亡或细胞。 与曝光底物相关的时间最小化，因为步进操作仅在扫描完整的单元格列之后才发生。

    SYSTEM AND METHOD FOR IMPROVING IMMERSION SCANNER OVERLAY PERFORMANCE
    4.
    发明申请
    SYSTEM AND METHOD FOR IMPROVING IMMERSION SCANNER OVERLAY PERFORMANCE 有权
    改进扫描仪覆盖性能的系统和方法

    公开(公告)号：US20120045192A1

    公开(公告)日：2012-02-23

    申请号：US13288133

    申请日：2011-11-03

    申请人： Jui-Cheng PENG ,  Tzung-Chi FU ,  Chin-Hsiang LIN ,  Chien-Hsun LIN ,  Chun-Hung LIN ,  Yao-Wen GUO ,  Shy-Jay LIN ,  Heng-Hsin LIU

    发明人： Jui-Cheng PENG ,  Tzung-Chi FU ,  Chin-Hsiang LIN ,  Chien-Hsun LIN ,  Chun-Hung LIN ,  Yao-Wen GUO ,  Shy-Jay LIN ,  Heng-Hsin LIU

    IPC分类号： G03B29/00

    CPC分类号： G03F7/70875 ,  G03F7/70341 ,  G03F7/70783

    摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner comprising a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method comprises providing a water tank at at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.

    摘要翻译： 描述了用于提高浸没式扫描仪覆盖性能的系统和方法。 一个实施例是一种提高光刻浸没式扫描仪的覆盖性能的方法，其包括设置在其中的水通道中的透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端， 输出用于从水道排出LCW。 该方法包括在晶片台输入和晶片台输出中的至少一个上提供水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

    DEVICE WITH ALUMINUM SURFACE PROTECTION
    6.
    发明申请
    DEVICE WITH ALUMINUM SURFACE PROTECTION 有权
    具有铝表面保护的器件

    公开(公告)号：US20120086075A1

    公开(公告)日：2012-04-12

    申请号：US13327992

    申请日：2011-12-16

    申请人： Kuo Bin HUANG ,  Ssu-Yi LI ,  Ryan Chia-Jen CHEN ,  Chi-Ming YANG ,  Chyi Shyuan CHERN ,  Chin-Hsiang LIN

    发明人： Kuo Bin HUANG ,  Ssu-Yi LI ,  Ryan Chia-Jen CHEN ,  Chi-Ming YANG ,  Chyi Shyuan CHERN ,  Chin-Hsiang LIN

    IPC分类号： H01L27/088

    CPC分类号： H01L21/823842 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28247 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor structure with a metal gate structure includes a first type field-effect transistor having a first gate including: a high k dielectric material on a substrate, a first metal layer on the high k dielectric material layer and having a first work function, and a first aluminum layer on the first metal layer. The first aluminum layer includes an interfacial layer including aluminum, nitrogen and oxygen. The device also includes a second type field-effect transistor having a second gate including: the high k dielectric material on the substrate, a second metal layer on the high k dielectric material layer and having a second work function different from the first work function, and a second aluminum layer on the second metal layer.

    摘要翻译： 具有金属栅极结构的半导体结构包括具有第一栅极的第一型场效应晶体管，包括：基板上的高k电介质材料，高k电介质材料层上的第一金属层，具有第一功函数，以及 在第一金属层上的第一铝层。 第一铝层包括包含铝，氮和氧的界面层。 该器件还包括具有第二栅极的第二类场效应晶体管，其包括：衬底上的高k电介质材料，高k电介质材料层上的第二金属层，具有不同于第一功函数的第二功函数， 和在第二金属层上的第二铝层。

    DUMMY VIAS FOR DAMASCENE PROCESS
    9.
    发明申请
    DUMMY VIAS FOR DAMASCENE PROCESS 有权
    DAMASCENE过程的DUMMY VIAS

    公开(公告)号：US20070224795A1

    公开(公告)日：2007-09-27

    申请号：US11457032

    申请日：2006-07-12

    申请人： Kuei Shun CHEN ,  Chin-Hsiang LIN ,  Vencent CHANG ,  Lawrence LIN ,  Lai Chien WEN ,  Jhun Hua CHEN

    发明人： Kuei Shun CHEN ,  Chin-Hsiang LIN ,  Vencent CHANG ,  Lawrence LIN ,  Lai Chien WEN ,  Jhun Hua CHEN

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76811 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of making an integrated circuit includes providing a low-k dielectric layer on a substrate, the low-k dielectric layer including or adjacent to a plurality of conductive features; patterning the low-k dielectric layer to form trenches; patterning the low-k dielectric layer to form conductive vias and dummy vias, wherein each of the conductive vias is aligned with at least one of the plurality of the conductive features and at least one of the trenches, and each of the dummy vias is a distance above the plurality of conductive features; filling the trenches, conductive vias, and dummy vias using one or more conductive materials; and planarizing the conductive material(s).

    摘要翻译： 制造集成电路的方法包括在衬底上提供低k电介质层，低k电介质层包括或邻近多个导电特征; 图案化低k电介质层以形成沟槽; 图案化低k电介质层以形成导电通孔和虚拟通孔，其中每个导电通孔与多个导电特征中的至少一个对齐，并且至少一个沟槽，并且每个虚拟通孔是 在多个导电特征之上的距离; 使用一种或多种导电材料填充沟槽，导电通孔和虚拟通孔; 并平坦化导电材料。

    IMMERSION LITHOGRAPHY APPARATUS AND METHODS
    10.
    发明申请
    IMMERSION LITHOGRAPHY APPARATUS AND METHODS 有权
    倾斜平面设备和方法

    公开(公告)号：US20070091287A1

    公开(公告)日：2007-04-26

    申请号：US11427421

    申请日：2006-06-29

    申请人： Ching-Yu CHANG ,  Burn Jeng LIN ,  Chin-Hsiang LIN

    发明人： Ching-Yu CHANG ,  Burn Jeng LIN ,  Chin-Hsiang LIN

    IPC分类号： B08B3/12 ,  B08B7/00 ,  B08B3/00 ,  G03B27/52

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; and a cleaning module adapted to clean the lithography apparatus. The cleaning module is selected from the group consisting of an ultrasonic unit, a scrubber, a fluid jet, an electrostatic cleaner, and combinations thereof.

    摘要翻译： 光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 以及适于清洁光刻设备的清洁模块。 清洁模块选自超声波单元，洗涤器，流体射流，静电清洁器及其组合。