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    HYBRID ION SOURCE/MULTIMODE ION SOURCE
    1.
    发明申请
    HYBRID ION SOURCE/MULTIMODE ION SOURCE 有权
    混合离子源/多元素离子源

    公开(公告)号：US20090032728A1

    公开(公告)日：2009-02-05

    申请号：US12184082

    申请日：2008-07-31

    申请人： William F. DiVergilio ,  Daniel R. Tieger ,  Michael A. Graf

    发明人： William F. DiVergilio ,  Daniel R. Tieger ,  Michael A. Graf

    IPC分类号： H01J27/02

    CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J2237/0827 ,  H01J2237/30472

    摘要： A hybrid ion source, comprising a source body configured to create plasma therein, from a first material, wherein the first material comprises one of monatomic gases, small molecule gases, large molecule gases, reactive gases, and solids, a low power plasma generation component operably associated with the source body, a high power plasma generation component operably associated with the source body and an extraction aperture configured to extract ions of the ion plasma from the source body.

    摘要翻译： 一种混合离子源，包括被配置为在其中从第一材料产生等离子体的源体，其中第一材料包括单原子气体，小分子气体，大分子气体，反应性气体和固体中的一种，低功率等离子体产生部件 可操作地与源体相关联，与源体可操作地相关联的高功率等离子体产生部件和被配置为从源体提取离子等离子体的离子的提取孔。

    Hybrid ion source/multimode ion source
    6.
    发明授权
    Hybrid ion source/multimode ion source 有权
    混合离子源/多模离子源

    公开(公告)号：US08193513B2

    公开(公告)日：2012-06-05

    申请号：US12184082

    申请日：2008-07-31

    申请人： William F. DiVergilio ,  Daniel R. Tieger ,  Michael A. Graf

    发明人： William F. DiVergilio ,  Daniel R. Tieger ,  Michael A. Graf

    IPC分类号： H01J27/00

    CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J2237/0827 ,  H01J2237/30472

    摘要： A hybrid ion source, comprising a source body configured to create plasma therein, from a first material, wherein the first material comprises one of monatomic gases, small molecule gases, large molecule gases, reactive gases, and solids, a low power plasma generation component operably associated with the source body, a high power plasma generation component operably associated with the source body and an extraction aperture configured to extract ions of the ion plasma from the source body.

    摘要翻译： 一种混合离子源，包括被配置为在其中从第一材料产生等离子体的源体，其中第一材料包括单原子气体，小分子气体，大分子气体，反应性气体和固体中的一种，低功率等离子体产生部件 可操作地与源体相关联，与源体可操作地相关联的高功率等离子体产生部件和被配置为从源体提取离子等离子体的离子的提取孔。

    Methods and systems for trapping ion beam particles and focusing an ion beam
    7.
    发明授权
    Methods and systems for trapping ion beam particles and focusing an ion beam 有权
    用于捕获离子束粒子并聚焦离子束的方法和系统

    公开(公告)号：US07598495B2

    公开(公告)日：2009-10-06

    申请号：US11739934

    申请日：2007-04-25

    申请人： Peter L. Kellerman ,  Victor M. Benveniste ,  Alexander S. Perel ,  Brian S. Freer ,  Michael A. Graf

    发明人： Peter L. Kellerman ,  Victor M. Benveniste ,  Alexander S. Perel ,  Brian S. Freer ,  Michael A. Graf

    IPC分类号： H01J3/18

    CPC分类号： H01J37/3171 ,  H01J37/12 ,  H01J2237/022 ,  H01J2237/049

    摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.

    摘要翻译： 一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收 离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面 所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压， 其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面 所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场 并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

    Ion beam utilization during scanned ion implantation
    8.
    发明授权
    Ion beam utilization during scanned ion implantation 有权
    扫描离子注入过程中的离子束利用

    公开(公告)号：US06953942B1

    公开(公告)日：2005-10-11

    申请号：US10944989

    申请日：2004-09-20

    申请人： Michael A. Graf ,  Andrew M. Ray

    发明人： Michael A. Graf ,  Andrew M. Ray

    IPC分类号： H01J37/302 ,  H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/302 ,  H01J2237/20228 ,  H01J2237/30488

    摘要： The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly “overshoot” the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of “overshoot”. This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.

    摘要翻译： 本发明涉及以串联注入工艺将离子注入到工件中，以产生类似于工件的尺寸，形状和/或其它尺寸方面的扫描图案。 这提高了工件振荡通过的离子束的效率和产量，并不会显着“过冲”工件。 然而，扫描图案可能稍微大于工件，使得随着工件反向前后摆动的方向，工件的方向，速度和/或加速度的变化所引起的惯性效应在少量的“ 超调“。 这有助于以相对恒定的速度移动工件穿过离子束，这又促进了基本上更均匀的离子注入。