公开(公告)号：US20060093959A1

公开(公告)日：2006-05-04

申请号：US10980365

申请日：2004-11-03

申请人： Wu-Song Huang ,  Sean Burns ,  Pushkara Varanasi

发明人： Wu-Song Huang ,  Sean Burns ,  Pushkara Varanasi

IPC分类号： G03C1/76

CPC分类号： G03F7/091 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/2041

摘要： A top anti-reflective coating material (TARC) and barrier layer, and the use thereof in lithography processes, is disclosed. The TARC/barrier layer may be especially useful for immersion lithography using water as the imaging medium. The TARC/barrier layer comprises a polymer which comprises at least one silicon-containing moiety and at least one aqueous base soluble moiety. Suitable polymers include polymers having a silsesquioxane (ladder or network) structure, such as polymers containing monomers having the structure: where R1 comprises an aqueous base soluble moiety, and x is from about 1 to about 1.95, more preferably from about 1 to about 1.75.

摘要翻译： 公开了一种顶部抗反射涂层材料（TARC）和阻挡层，以及其在光刻工艺中的用途。 TARC /阻挡层可能特别适用于使用水作为成像介质的浸没式光刻技术。 TARC /阻挡层包含含有至少一个含硅部分和至少一个水溶性碱可溶部分的聚合物。 合适的聚合物包括具有倍半硅氧烷（梯形或网络）结构的聚合物，例如含有具有以下结构的单体的聚合物：其中R 1包含碱水溶性部分，x为约1至约1.95， 更优选约1至约1.75。

公开(公告)号：US20080044776A1

公开(公告)日：2008-02-21

申请号：US11925006

申请日：2007-10-26

申请人： Wu-Song Huang ,  Karen Temple ,  Pushkara Varanasi

发明人： Wu-Song Huang ,  Karen Temple ,  Pushkara Varanasi

IPC分类号： G03C5/00

CPC分类号： G03F7/094 ,  G06F17/5072

摘要： A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.

公开(公告)号：US20070009830A1

公开(公告)日：2007-01-11

申请号：US11175755

申请日：2005-07-06

申请人： Wu-Song Huang ,  Karen Temple ,  Pushkara Varanasi

发明人： Wu-Song Huang ,  Karen Temple ,  Pushkara Varanasi

IPC分类号： G03C1/00

CPC分类号： G03F7/094 ,  G06F17/5072

摘要： A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.

摘要翻译： 公开了一种适合用作多层光刻工艺中的平坦化底层的组合物。 本发明的组合物包含含有杂环芳族部分的聚合物。 另一方面，组合物还包含酸生成剂。 在另一方面，组合物还包含交联剂。 本发明的组合物提供具有突出的光学，机械和蚀刻选择性的平坦化底层。 本发明还包括含有由本发明组合物制备的底层的光刻结构，以及制备这种光刻结构的方法，以及使用这种平版印刷结构在基底上图形下层材料层的方法。

公开(公告)号：US20070087285A1

公开(公告)日：2007-04-19

申请号：US11249693

申请日：2005-10-13

申请人： Wu-Song Huang ,  William Heath ,  Kaushal Patel ,  Pushkara Varanasi

发明人： Wu-Song Huang ,  William Heath ,  Kaushal Patel ,  Pushkara Varanasi

IPC分类号： G03C1/00

CPC分类号： G03F7/091 ,  Y10S438/952

摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.

摘要翻译： 已经发现特征在于具有相对于193nm的辐射波长的具有芳族部分和折射率值n小于1.5的水溶性基团可溶性聚合物的组合物，其特别用作193nm干法光刻中的顶部抗反射涂层 过程。 已经发现具有乙烯主链并具有氟和磺酸部分的聚合物是特别有用的。 该组合物能够在193nm的顶部反射控制，同时通过其在含水碱性显影剂溶液中的溶解度而提供易于使用。

公开(公告)号：US20060134547A1

公开(公告)日：2006-06-22

申请号：US11195566

申请日：2005-08-02

申请人： Wu-Song Huang ,  Sean Burns ,  Mahmoud Khojasteh

发明人： Wu-Song Huang ,  Sean Burns ,  Mahmoud Khojasteh

IPC分类号： G03C1/76

CPC分类号： G03F7/091 ,  G03F7/094 ,  Y10S438/952

摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.

公开(公告)号：US20060134546A1

公开(公告)日：2006-06-22

申请号：US11013971

申请日：2004-12-16

申请人： Wu-Song Huang ,  Sean Burns ,  Mahmoud Khojasteh

发明人： Wu-Song Huang ,  Sean Burns ,  Mahmoud Khojasteh

IPC分类号： G03C1/76

CPC分类号： G03F7/091 ,  G03F7/094 ,  Y10S438/952

摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: where each R1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moiety; R2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is 7 or less. The organic moiety mentioned above may be a substituted or unsubstituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as a planarizing underlayer in a multilayer lithographic process, including a trilayer lithographic process.

摘要翻译： 公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。 底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。 本发明的聚合物的实例包括：其中每个R 1独立地选自有机部分或卤素; 每个A独立地是单键或有机部分; R 2是氢或甲基; X，Y，Z为0〜7的整数，Y + Z为7以下。 上述有机部分可以是选自直链或支链烷基，卤代直链或支链烷基，芳基，卤代芳基，环状烷基和卤代环状烷基的取代或未取代的烃及其任何组合。 该组合物适合用作多层光刻工艺中的平坦化底层，包括三层光刻工艺。

公开(公告)号：US08846295B2

公开(公告)日：2014-09-30

申请号：US13457735

申请日：2012-04-27

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： G03F7/038 ,  G03F7/021

CPC分类号： G03F7/0382 ,  G03F7/021 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/325

摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

摘要翻译： 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物，交联剂和辐射敏感的酸发生剂。 成像聚合物包括具有酸不稳定部分取代的羟基的单体单元。 图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

公开(公告)号：US08293451B2

公开(公告)日：2012-10-23

申请号：US12543003

申请日：2009-08-18

申请人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

发明人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028

CPC分类号： G03F7/091 ,  G03F9/7026

摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US20120178027A1

公开(公告)日：2012-07-12

申请号：US13418421

申请日：2012-03-13

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Ranee Wai-Ling Kwong ,  Sen Liu ,  Pushkara R. Varanasi

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Ranee Wai-Ling Kwong ,  Sen Liu ,  Pushkara R. Varanasi

IPC分类号： G03F7/20

CPC分类号： G03F7/038 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/095 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70466 ,  Y10S430/12

摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.

摘要翻译： 一个方法。 该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。 光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。 感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。 第二量的酸超过第一量的酸。 第二剂辐射超过第一剂量的辐射。 光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。 碱的第一量超过第一量的酸。 第二量的酸超过第二量的碱。

公开(公告)号：US20120156450A1

公开(公告)日：2012-06-21

申请号：US13406965

申请日：2012-02-28

申请人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

发明人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

IPC分类号： B32B3/00

CPC分类号： G03F7/70466 ,  Y10S438/947 ,  Y10S438/948 ,  Y10T428/24802

摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.

摘要翻译： 在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。 在第二光致抗蚀剂中形成包括线阵列的第二图案。 在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外的第二光致抗蚀剂的暴露部分形成线图案的宽部分 。 线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。