公开(公告)号：US09761555B2

公开(公告)日：2017-09-12

申请号：US14604525

申请日：2015-01-23

Applicant: XINTEC INC.

Inventor： Jiun-Yen Lai ,  Yu-Wen Hu ,  Bai-Yao Lou ,  Chia-Sheng Lin ,  Yen-Shih Ho ,  Hsin Kuan

IPC: H01L31/00 ,  H01L23/00 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L24/81 ,  H01L23/5227 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L28/10 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03902 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05005 ,  H01L2224/05007 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05562 ,  H01L2224/05564 ,  H01L2224/05571 ,  H01L2224/05583 ,  H01L2224/05644 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13562 ,  H01L2224/13644 ,  H01L2224/48 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/014

Abstract: A manufacturing method of a passive component structure includes the following steps. A protection layer is formed on a substrate, and bond pads of the substrate are respectively exposed through protection layer openings. A conductive layer is formed on the bond pads and the protection layer. A patterned photoresist layer is formed on the conductive layer, and the conductive layer adjacent to the protection layer openings is exposed through photoresist layer openings. Copper bumps are respectively electroplated on the conductive layer. The photoresist layer and the conductive layer not covered by the copper bumps are removed. A passivation layer is formed on the copper bumps and the protection layer, and at least one of the copper bumps is exposed through a passivation layer opening. A diffusion barrier layer and an oxidation barrier layer are chemically plated in sequence on the copper bump.

公开(公告)号：US09704943B2

公开(公告)日：2017-07-11

申请号：US14462490

申请日：2014-08-18

Applicant: XINTEC INC.

Inventor： Wei-Ming Lai ,  Yu-Wen Hu

IPC: H01L27/08 ,  H01L49/02 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/64 ,  H01L23/532

CPC classification number: H01L28/10 ,  H01L23/3171 ,  H01L23/5227 ,  H01L23/53238 ,  H01L23/645 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/11474 ,  H01L2224/11825 ,  H01L2224/11903 ,  H01L2224/13083 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1355 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/1206

Abstract: A manufacturing method of an inductor structure includes the following steps. A protection layer is formed on a substrate, such that bond pads of the substrate are respectively exposed form protection layer openings of the protection layer. A conductive layer is formed on the bond pads and the protection layer. A patterned first photoresist layer is formed on the conductive layer. Copper bumps are respectively formed on the conductive layer located in the first photoresist layer openings. A patterned second photoresist layer is formed on the first photoresist layer, such that at least one of the copper bumps is exposed through second photoresist layer opening and the corresponding first photoresist layer opening. A diffusion barrier layer and an oxidation barrier layer are formed on the copper bump. The first and second photoresist layers, and the conductive layer not covered by the copper bumps are removed.