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    Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
    2.
    发明授权
    Deposition-plasma cure cycle process to enhance film quality of silicon dioxide 有权
    沉积 - 等离子体固化循环过程，以提高二氧化硅的膜质量

    公开(公告)号：US07902080B2

    公开(公告)日：2011-03-08

    申请号：US11753968

    申请日：2007-05-25

    申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  Shankar Venkataraman

    发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  Shankar Venkataraman

    IPC分类号： H01L21/302

    CPC分类号： C23C16/045 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31633

    摘要： Methods of filling a gap on a substrate with silicon oxide are described. The methods may include the steps of introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber, reacting the precursors to form a first silicon oxide layer in the gap on the substrate, and etching the first silicon oxide layer to reduce the carbon content in the layer. The methods may also include forming a second silicon oxide layer on the first layer, and etching the second layer to reduce the carbon content in the second layer. The silicon oxide layers are annealed after the gap is filled.

    摘要翻译： 描述了用氧化硅填充衬底上的间隙的方法。 所述方法可以包括以下步骤：将有机硅前体和氧前体引入沉积室，使前体反应以在衬底上的间隙中形成第一氧化硅层，并蚀刻第一氧化硅层以还原碳 内容在图层中。 所述方法还可以包括在第一层上形成第二氧化硅层，并蚀刻第二层以降低第二层中的碳含量。 在填充间隙之后对氧化硅层进行退火。

    POST DEPOSITION PLASMA TREATMENT TO INCREASE TENSILE STRESS OF HDP-CVD SIO2
    3.
    发明申请
    POST DEPOSITION PLASMA TREATMENT TO INCREASE TENSILE STRESS OF HDP-CVD SIO2 失效
    后沉积等离子体处理以提高HDP-CVD SIO2的拉伸应力

    公开(公告)号：US20090035918A1

    公开(公告)日：2009-02-05

    申请号：US12252260

    申请日：2008-10-15

    申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    IPC分类号： H01L21/76

    CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

    摘要： Methods of forming a dielectric layer where the tensile stress of the layer is increased by a plasma treatment at an elevated position are described. In one embodiment, oxide and nitride layers are deposited on a substrate and patterned to form an opening. A trench is etched into the substrate. The substrate is transferred into a chamber suitable for dielectric deposition. A dielectric layer is deposited over the substrate, filling the trench and covering mesa regions adjacent to the trench. The substrate is raised to an elevated position above the substrate support and exposed to a plasma which increases the tensile stress of the substrate. The substrate is removed from the dielectric deposition chamber, and portions of the dielectric layer are removed so that the dielectric layer is even with the topmost portion of the nitride layer. The nitride and pad oxide layers are removed to form the STI structure.

    摘要翻译： 描述了通过在升高的位置处的等离子体处理来增加层的拉伸应力的电介质层的形成方法。 在一个实施例中，将氧化物和氮化物层沉积在衬底上并图案化以形成开口。 沟槽被蚀刻到衬底中。 将基底转移到适合于电介质沉积的室中。 介电层沉积在衬底上，填充沟槽并覆盖与沟槽相邻的台面区域。 将衬底升高到衬底支撑件上方的升高位置并暴露于等离子体，这增加了衬底的拉伸应力。 从电介质沉积室取出基板，除去介质层的部分，使得介质层与氮化物层的最上部分均匀。 去除氮化物层和衬垫氧化物层以形成STI结构。

    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
    4.
    发明授权
    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 失效
    后沉积等离子体处理以增加HDP-CVD SIO2的拉伸应力

    公开(公告)号：US07745351B2

    公开(公告)日：2010-06-29

    申请号：US12252260

    申请日：2008-10-15

    申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

    摘要： Methods of forming a dielectric layer where the tensile stress of the layer is increased by a plasma treatment at an elevated position are described. In one embodiment, oxide and nitride layers are deposited on a substrate and patterned to form an opening. A trench is etched into the substrate. The substrate is transferred into a chamber suitable for dielectric deposition. A dielectric layer is deposited over the substrate, filling the trench and covering mesa regions adjacent to the trench. The substrate is raised to an elevated position above the substrate support and exposed to a plasma which increases the tensile stress of the substrate. The substrate is removed from the dielectric deposition chamber, and portions of the dielectric layer are removed so that the dielectric layer is even with the topmost portion of the nitride layer. The nitride and pad oxide layers are removed to form the STI structure.

    摘要翻译： 描述了通过在升高的位置处的等离子体处理来增加层的拉伸应力的电介质层的形成方法。 在一个实施例中，将氧化物和氮化物层沉积在衬底上并图案化以形成开口。 沟槽被蚀刻到衬底中。 将基底转移到适合于电介质沉积的室中。 介电层沉积在衬底上，填充沟槽并覆盖与沟槽相邻的台面区域。 将衬底升高到衬底支撑件上方的升高位置并暴露于等离子体，这增加了衬底的拉伸应力。 从电介质沉积室取出基板，除去介质层的部分，使得介质层与氮化物层的最上部分均匀。 去除氮化物层和衬垫氧化物层以形成STI结构。

    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
    5.
    发明授权
    Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 失效
    后沉积等离子体处理以增加HDP-CVD SIO2的拉伸应力

    公开(公告)号：US07465680B2

    公开(公告)日：2008-12-16

    申请号：US11221303

    申请日：2005-09-07

    申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

    摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.

    摘要翻译： 描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。 在基底上沉积介电层之后，将衬底提升到衬底接收表面上方的升高位置并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力 。 本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并提高衬底的温度。 在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中首先在沉积后直接在处理位置处暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置 暴露于等离子体。

    TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS
    6.
    发明申请
    TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS 审中-公开
    用于电介质膜的两级氧化固化

    公开(公告)号：US20120238108A1

    公开(公告)日：2012-09-20

    申请号：US13227161

    申请日：2011-09-07

    申请人： Xiaolin Chen ,  Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

    发明人： Xiaolin Chen ,  Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC分类号： H01L21/316

    CPC分类号： H01L21/02164 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02219 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31111

    摘要： A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing the dielectric layer to ozone while the second step involves exposing the dielectric layer to ozone excited by a local plasma. This sequence can reduce or eliminate the need for a subsequent anneal following the cure step. The two-step ozone cures may be applied to silicon-and-nitrogen-containing film to convert the films to silicon oxide.

    摘要翻译： 描述形成氧化硅层的方法。 该方法通过在两步臭氧固化中固化该层来增加电介质层的氧含量。 第一步涉及将介电层暴露于臭氧，而第二步涉及将电介质层暴露于由局部等离子体激发的臭氧。 该顺序可以减少或消除在固化步骤之后的后续退火的需要。 两步臭氧治疗可以应用于含硅和氮的膜以将膜转化为氧化硅。

    SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING
    7.
    发明申请
    SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING 有权
    表面处理和沉积减少出口

    公开(公告)号：US20130149462A1

    公开(公告)日：2013-06-13

    申请号：US13494341

    申请日：2012-06-12

    申请人： Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle ,  Shankar Venkataraman

    发明人： Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC分类号： C23C16/40

    CPC分类号： C23C16/401 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274

    摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.

    摘要翻译： 描述形成电介质层的方法。 该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。 通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。 氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。 或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。 任一种形成方法都涉及在衬底处理区域内形成局部等离子体。