公开(公告)号：US20130196470A1

公开(公告)日：2013-08-01

申请号：US13802262

申请日：2013-03-13

Applicant: XINTEC INC.

Inventor： Chia-Lun TSAI ,  Tsang-Yu LIU ,  Chia-Ming CHENG

IPC: H01L21/78

CPC classification number: H01L21/78 ,  H01L21/76898 ,  H01L23/552 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/023 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/2919 ,  H01L2224/73253 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01029 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/83 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A chip package includes a substrate having a pad region, a device region, and a remained scribe region located at a periphery of the substrate; a signal and an EMI ground pads disposed on the pad region; a first and a second openings penetrating into the substrate to expose the signal and the EMI ground pads, respectively; a first and a second conducting layers located in the first and the second openings and electrically connecting the signal and the EMI ground pads, respectively, wherein the first conducting layer and the signal pad are separated from a periphery of the remained scribe region, and wherein a portion of the second conducting layer and/or the EMI ground pad extend(s) to a periphery of the remained scribe region; and a third conducting layer surrounding the periphery of the remained scribe region to electrically connect the second conducting layer and/or the EMI ground pad.

Abstract translation: 芯片封装包括具有焊盘区域，器件区域和位于衬底周围的残留刻划区域的衬底; 设置在所述焊盘区域上的信号和EMI接地焊盘; 分别穿入基板以暴露信号和EMI接地焊盘的第一和第二开口; 位于所述第一和第二开口中的第一和第二导电层，分别电连接所述信号和所述EMI接地焊盘，其中所述第一导电层和所述信号焊盘与所述残留划线区域的外围分离，并且其中 所述第二导电层和/或所述EMI接地垫的一部分延伸到所述残留划线区域的周边; 以及围绕剩余划线区域的周边的第三导电层，以电连接第二导电层和/或EMI接地垫。

公开(公告)号：US20130193520A1

公开(公告)日：2013-08-01

申请号：US13828537

申请日：2013-03-14

Applicant: Xintec Inc.

Inventor： Baw-Ching PERNG ,  Ying-Nan WEN ,  Shu-Ming CHANG ,  Ching-Yu NI ,  Yun-Jui HSIEH ,  Wei-Ming CHEN ,  Chia-Lun TSAI ,  Chia-Ming CHENG

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/492 ,  H01L24/13 ,  H01L24/16 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/7802 ,  H01L29/7809 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/13091 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A power MOSFET package includes a semiconductor substrate having opposite first and second surfaces, having a first conductivity type, and forming a drain region, a doped region extending downward from the first surface and having a second conductivity type, a source region in the doped region and having the first conductivity type, a gate overlying or buried under the first surface, wherein a gate dielectric layer is between the gate and the semiconductor substrate, a first conducting structure overlying the semiconductor substrate, having a first terminal, and electrically connecting the drain region, a second conducting structure overlying the semiconductor substrate, having a second terminal, and electrically connecting the source region, a third conducting structure overlying the semiconductor substrate, having a third terminal, and electrically connecting the gate, wherein the first, the second, and the third terminals are substantially coplanar, and a protection layer between the semiconductor substrate and the terminals.

Abstract translation: 功率MOSFET封装包括具有相反的第一和第二表面的半导体衬底，具有第一导电类型，并形成漏极区，从第一表面向下延伸并具有第二导电类型的掺杂区，掺杂区中的源极区 并且具有第一导电类型，覆盖或掩埋在第一表面下方的栅极，其中栅极电介质层位于栅极和半导体衬底之间，覆盖半导体衬底的第一导电结构，具有第一端子，并且电连接漏极 区域，覆盖半导体衬底的第二导电结构，具有第二端子，并且电连接源极区域，覆盖半导体衬底的第三导电结构，具有第三端子和电连接栅极，其中第一，第二， 并且第三端子基本上共面，并且第三端子之间的保护层 e半导体衬底和端子。

公开(公告)号：US20140113412A1

公开(公告)日：2014-04-24

申请号：US14135506

申请日：2013-12-19

Applicant: XINTEC INC.

Inventor： Chia-Lun TSAI ,  Chia-Ming CHENG ,  Long-Sheng YEOU

IPC: H01L21/78

CPC classification number: H01L21/78 ,  B81B2207/07 ,  B81B2207/098 ,  B81C1/00825 ,  B81C2201/014 ,  B81C2201/053 ,  B81C2203/0118

Abstract: An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a chip protection layer or an additional etching stop layer to cover conducting pads to prevent dicing residue from damaging or scratching the conducting pads. According to another embodiment, a chip protection layer, an additional etching stop layer formed thereon, or a metal etching stop layer level with conducting pads or combinations thereof may be used when etching an intermetal dielectric layer at a structural etching region and a silicon substrate to form an opening for subsequent semiconductor manufacturing processes.

Abstract translation: 本发明的实施例涉及一种芯片封装及其制造方法，其包括芯片保护层或附加的蚀刻停止层，以覆盖导电焊盘，以防止切割残留物损坏或划伤导电焊盘。 根据另一个实施例，当蚀刻结构蚀刻区域和硅衬底上的金属间电介质层时，可以使用芯片保护层，其上形成的附加蚀刻停止层或具有导电焊盘或其组合的金属蚀刻停止层， 形成随后的半导体制造工艺的开口。