公开(公告)号：US6015464A

公开(公告)日：2000-01-18

申请号：US69647

申请日：1998-04-29

申请人： Changfeng Xia ,  Yanwei Zhang

发明人： Changfeng Xia ,  Yanwei Zhang

IPC分类号： C23C16/44 ,  C23C16/46 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67017 ,  C23C16/44 ,  C23C16/46 ,  H01L21/67109

摘要： An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a conductor coil. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure and is configured to be coaxial with the conductor coil. Devices move through the input conduit where they are preheated by a resistance-type furnace. The preheated devices then move into the chamber where they are further heated by radio frequency energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

摘要翻译： 一种用于在诸如球形装置的装置的表面上沉积薄膜的装置和方法。 该装置包括包含多个孔和外壳的外壳。 孔连接到用于输入和输出装置以及注入和释放不同气体和/或加工成分的导管。 腔室形成在外壳内并被构造成与导体线圈同轴。 设备移动通过输入导管，在那里它们被电阻型炉预热。 然后，预热的装置移动到室中，在那里它们被来自导体线圈的射频能量进一步加热。 此时，气体和/或处理成分与加热的装置反应，从而在其外表面上生长薄膜。

公开(公告)号：US06221165B1

公开(公告)日：2001-04-24

申请号：US09346249

申请日：1999-07-01

申请人： Yanwei Zhang ,  Changfeng Xia

发明人： Yanwei Zhang ,  Changfeng Xia

IPC分类号： H01L2906

CPC分类号： H01L21/67109 ,  C30B31/06 ,  H01L21/2252 ,  H01L21/2255 ,  Y10T29/41

摘要： An apparatus and method for performing thermal diffusion on the substrate of a device such as a spherical shaped semiconductor. To this end, one embodiment provides an enclosure containing a plurality of apertures and a plasma chamber. A plasma generator for producing a plasma torch is incorporated with the plasma chamber, the plasma generator including a conductor coil electrically connected to a radio frequency energy generator. A first conduit registering with a first opening in the enclosure allows the semiconductor devices to be received into the plasma chamber. A second conduit registering with a second opening in the enclosure allows the semiconductor devices to exit the plasma chamber. Processing fluids are injected into the plasma chamber so that a doping material from the process fluid is ionized at an upper portion of the plasma torch to form a high density diffusion plasma. This high density diffusion plasma supports a quick and uniform diffusion of the doping material into the substrate of the semiconductor devices.

摘要翻译： 在诸如球形半导体的器件的衬底上进行热扩散的装置和方法。 为此，一个实施例提供了包含多个孔和等离子体室的外壳。 用于产生等离子体焰炬的等离子体发生器与等离子体室结合，等离子体发生器包括电连接到射频能量发生器的导体线圈。 与壳体中的第一开口对准的第一导管允许半导体器件被接收到等离子体室中。 与壳体中的第二开口对准的第二导管允许半导体器件离开等离子体室。 将处理流体注入到等离子体室中，使得来自工艺流体的掺杂材料在等离子体焰炬的上部被离子化以形成高密度扩散等离子体。 这种高密度扩散等离子体支持将掺杂材料快速均匀地扩散到半导体器件的衬底中。

公开(公告)号：US20070228010A1

公开(公告)日：2007-10-04

申请号：US11395799

申请日：2006-03-31

申请人： James Martin ,  Kelly Taylor ,  Changfeng Xia ,  Donald Culp ,  David Frystak

发明人： James Martin ,  Kelly Taylor ,  Changfeng Xia ,  Donald Culp ,  David Frystak

IPC分类号： B44C1/22 ,  B32B1/08 ,  H01L21/306

CPC分类号： H01L21/02087 ,  H01L21/02274 ,  H01L21/31625 ,  H01L21/3185

摘要： A method removes and/or contains edge residue. A wafer comprised of a semiconductor material having a top surface, a bottom surface and an edge surface is provided. The bottom surface and the top surface are substantially planar and the edge surface is non-planar. Residue can be located on the edge surface, which can dislodge if not addressed and damage devices formed on the wafer. One or more devices can be at least partially formed on the top surface. A pre-metal dielectric liner is formed over the top surface of the wafer and covering at least a portion of the residue. An edge portion of the liner is etched or otherwise removed to expose the portion of the residue. Thereafter, a pre-metal dielectric layer is formed over the top surface of the wafer and the pre-metal dielectric liner. During formation of the pre-metal dielectric layer, the edge residue is removed and/or contained.

摘要翻译： 一种方法去除和/或含有边缘残留物。 提供由具有顶表面，底表面和边缘表面的半导体材料组成的晶片。 底表面和顶表面基本上是平面的，并且边缘表面是非平面的。 残留物可以位于边缘表面上，如果不被寻址并且损坏在晶片上形成的器件，其可以移除。 一个或多个装置可以至少部分地形成在顶部表面上。 在晶片的顶表面上形成预金属电介质衬垫，并覆盖至少一部分残留物。 衬里的边缘部分被蚀刻或以其它方式去除以暴露残余部分。 此后，在晶片的顶表面和预金属电介质衬垫之上形成预金属电介质层。 在金属前介电层的形成期间，边缘残留物被去除和/或包含。

公开(公告)号：US07195679B2

公开(公告)日：2007-03-27

申请号：US10601016

申请日：2003-06-21

申请人： Changfeng Xia ,  Trace Q. Hurd

发明人： Changfeng Xia ,  Trace Q. Hurd

IPC分类号： B08B3/02

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/102 ,  B08B5/02 ,  Y10S134/902

摘要： The present invention provides a system (200, 300) for remediating aberrations along the perimeter of a semiconductor wafer (202). The system includes a cleaning apparatus (204) within which the wafer is spun within a confined area. A chuck (208) defines the confined area, having a sidewall that extends above the upper surface (214) of the wafer and surrounds the perimeter of the wafer. The chuck also has a bottom wall, with an aperture formed therein, beneath the wafer. The system includes an isolation barrier (220), disposed atop the bottom wall of the chuck and around the aperture, in proximity to the lower surface so of the wafer. This forms a narrow gap (226) between the barrier and the wafer. A pressurized source forcefully directs a gas (218) at and along the lower surface of the wafer. The system also includes a remediation solution (228) that is applied to the upper surface of the wafer. The solution is forced into a well (230) formed between the chuck sidewall and the perimeter of the wafer, such that the solution bathes the perimeter of the wafer.

摘要翻译： 本发明提供一种用于补救沿着半导体晶片（202）周边的像差的系统（200,300）。 该系统包括清洁设备（204），在该清洁设备内，晶片在限制区域内旋转。 卡盘（208）限定约束区域，其具有在晶片的上表面（214）上方延伸并且围绕晶片的周边的侧壁。 卡盘还具有底壁，其中形成有孔，在晶片下方。 该系统包括隔离屏障（220），该隔离屏障（220）设置在卡盘的底壁的上方并且围绕孔径，靠近晶片的下表面。 这在屏障和晶片之间形成窄的间隙（226）。 加压源强制地引导位于晶片下表面的气体（218）。 该系统还包括施加到晶片的上表面的补救解决方案（228）。 溶液被迫进入形成在卡盘侧壁和晶片的周边之间的孔（230）中，使得溶液洗涤晶片的周边。

公开(公告)号：US06303517B1

公开(公告)日：2001-10-16

申请号：US09361793

申请日：1999-07-27

申请人： Changfeng Xia ,  Lixin Wu

发明人： Changfeng Xia ,  Lixin Wu

IPC分类号： C23C1600

CPC分类号： C23C16/345 ,  C23C16/402 ,  C23C16/46 ,  C23C16/54

摘要： An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a conductor coil. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure and is configured to be coaxial with the conductor coil. Devices move through the input conduit where they are preheated by a resistance-type furnace. The preheated devices then move into the chamber where chemical precursors are added and the devices are further heated to a predefined temperature associated with the chemical precursors by radio frequency energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

摘要翻译： 一种用于在诸如球形装置的装置的表面上沉积薄膜的装置和方法。 该装置包括包含多个孔和外壳的外壳。 孔连接到用于输入和输出装置的管道，以及注入和释放不同气体和/或处理成分。 腔室形成在外壳内并被构造成与导体线圈同轴。 设备移动通过输入导管，在那里它们被电阻型炉预热。 然后，预热的装置移动到其中添加化学前体的室中，并且通过来自导体线圈的射频能量将装置进一步加热到与化学前体相关联的预定温度。 此时，气体和/或处理成分与加热的装置反应，从而在其外表面上生长薄膜。

公开(公告)号：US6053123A

公开(公告)日：2000-04-25

申请号：US69645

申请日：1998-04-29

申请人： Changfeng Xia

发明人： Changfeng Xia

IPC分类号： C23C16/44 ,  C23C16/513 ,  C30B25/08 ,  C30B25/10 ,  H05H1/24 ,  H01L33/00

CPC分类号： C30B29/60 ,  C23C16/4417 ,  C23C16/513 ,  C30B25/08 ,  C30B25/105 ,  H05H1/30

摘要： An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and two chambers. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A first chamber is formed within the enclosure and includes a plasma torch. A second chamber is formed within the enclosure and includes a heating coil. Devices move through the input conduit and into the first chamber where they are heated by the plasma torch. Because of this heating, radicals, electrons, and ions near the surface of the devices are generated. The heated devices then move into the second chamber where they are further heated by energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

摘要翻译： 一种用于在诸如球形装置的装置的表面上沉积薄膜的装置和方法。 该装置包括包含多个孔和两个室的外壳。 孔连接到用于输入和输出装置的管道，以及注入和释放不同气体和/或处理成分。 第一室形成在外壳内并且包括等离子体焰炬。 第二室形成在外壳内并且包括加热线圈。 设备移动通过输入导管并进入第一室，在那里它们被等离子体焰炬加热。 由于这种加热，产生了靠近设备表面的自由基，电子和离子。 然后，加热的装置移动到第二室中，在那里它们被来自导体线圈的能量进一步加热。 此时，气体和/或处理成分与加热的装置反应，从而在其外表面上生长薄膜。

公开(公告)号：US07198705B2

公开(公告)日：2007-04-03

申请号：US10325773

申请日：2002-12-19

申请人： Linlin Chen ,  Jiong-Ping Lu ,  Changfeng Xia

发明人： Linlin Chen ,  Jiong-Ping Lu ,  Changfeng Xia

IPC分类号： C25D5/48 ,  C25D7/12 ,  C25D5/02 ,  C25D5/10

CPC分类号： H01L21/76877 ,  H01L21/2885

摘要： An improved copper ECD process. After the copper seed layer (116) is formed, a first portion of copper film (118) is plated onto the surface of the seed layer (116). The surface of the first portion of the copper film (118) is then rinsed to equalize the organic adsorption on all sites to prevent preferential copper growth in dense areas. After rinsing, the remaining copper of the copper film (118) is electrochemically deposited.

摘要翻译： 改进的铜ECD工艺。 在形成铜籽晶层（116）之后，将第一部分铜膜（118）镀在种子层（116）的表面上。 然后冲洗铜膜（118）的第一部分的表面以均衡所有位置上的有机吸附，以防止在密集区域中优先铜生长。 冲洗后，电化学沉积铜膜（118）的剩余铜。

公开(公告)号：US07067015B2

公开(公告)日：2006-06-27

申请号：US10284708

申请日：2002-10-31

申请人： Changfeng Xia ,  Linlin Chen

发明人： Changfeng Xia ,  Linlin Chen

IPC分类号： C23G1/02

CPC分类号： H01L21/67051 ,  B08B3/08 ,  B08B3/12 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/67046 ,  Y10S438/906

摘要： A cleaning chemistry for lowering defect levels on the backside of a semiconductor wafer after chemical mechanical planarization (CMP). In a preferred embodiment of the present invention, a cleaning chemistry comprising nitric acid, hydrofluoric acid, and phosphoric acid in solution with deionized water is applied to the wafer surface to be cleaned preferably while subjected to megasonic assist cleaning. The wafer is preferably then subjected to brush scrubbing and a deionized water rinse with megasonic assist cleaning.

摘要翻译： 用于在化学机械平面化（CMP）之后降低半导体晶片背面的缺陷水平的清洁化学品。 在本发明的优选实施方案中，优选在进行超声波辅助清洗的同时，将包含硝酸，氢氟酸和磷酸在内的去离子水溶液中的清洗化学品施加到待清洗的晶片表面上。 然后优选将晶片经过刷洗和用超音波辅助清洗的去离子水冲洗。

公开(公告)号：US07267726B2

公开(公告)日：2007-09-11

申请号：US10420228

申请日：2003-04-22

申请人： Changfeng Xia

发明人： Changfeng Xia

IPC分类号： C23G1/02

CPC分类号： H01L21/02063 ,  B08B3/08 ,  H01L21/67051 ,  H01L21/6708

摘要： A method for cleaning a semiconductor device has the steps of securing a wafer (16) with a modified chuck (11) and applying a cleaning solution (18) to the backside (20) of the wafer (16). The cleaning solution (18) is formulated to remove PTFE from the wafer (16). The cleaning solution (18) is applied to the edge (14) of the wafer (16) because of the characteristics of the modified chuck (11) to remove PTFE impurities that gather on the edge (14) of the wafer (16).

摘要翻译： 用于清洁半导体器件的方法具有以下步骤：用修改的卡盘（11）固定晶片（16）并将清洁溶液（18）施加到晶片（16）的背面（20）。 配制清洁溶液（18）以从晶片（16）去除PTFE。 由于改进的卡盘（11）的特性以清除聚集在晶片（16）的边缘（14）上的PTFE杂质，因此将清洁溶液（18）施加到晶片（16）的边缘（14）。

公开(公告)号：US06784093B1

公开(公告)日：2004-08-31

申请号：US10608921

申请日：2003-06-27

申请人： Jiong-Ping Lu ,  Changfeng Xia

发明人： Jiong-Ping Lu ,  Changfeng Xia

IPC分类号： H01L214763

CPC分类号： B82Y30/00 ,  H01L21/76838 ,  H01L21/7684 ,  Y10S438/906 ,  Y10S438/958

摘要： An embodiment of the invention is a method to reduce the corrosion of copper interconnects 90 by forming a thiol ligand coating 130 on the surface of the copper interconnects 90.

摘要翻译： 本发明的一个实施例是通过在铜互连件90的表面上形成硫醇配体涂层130来减少铜互连件90的腐蚀的方法。