公开(公告)号：US5396354A

公开(公告)日：1995-03-07

申请号：US094307

申请日：1993-07-20

申请人： Yasunori Shimada ,  Tomohiko Yamamoto ,  Hiroshi Morimoto ,  Yoshimi Kojima ,  Mitsuhiro Koden ,  Masaru Yoshida

发明人： Yasunori Shimada ,  Tomohiko Yamamoto ,  Hiroshi Morimoto ,  Yoshimi Kojima ,  Mitsuhiro Koden ,  Masaru Yoshida

IPC分类号： G02F1/136 ,  G02F1/1365 ,  H01L49/02 ,  H01L45/00

CPC分类号： G02F1/1365

摘要： In the liquid crystal display, a liquid crystal layer is provided between a first insulating substrate and a second insulating substrate. A plurality of first electrodes are arranged in parallel on the first insulating substrate in a first direction, and a first insulating layer is formed on the entire surface of the first insulating substrate and covers the first electrodes. A semiconductor layer is formed on the first insulating layer, and a second insulating layer is formed thereon and covers the entire surface of the first insulating substrate. This triple-layered structure constitutes a switching element array. A plurality of second electrodes are arranged in parallel on the second insulating electrode in a second direction crossing the first direction. Thus, the switching element array sandwiched between the first and second electrodes is used for driving the liquid crystal layer.

摘要翻译： 在液晶显示器中，液晶层设置在第一绝缘基板和第二绝缘基板之间。 多个第一电极在第一绝缘基板上沿第一方向平行布置，第一绝缘层形成在第一绝缘基板的整个表面上并覆盖第一电极。 在第一绝缘层上形成半导体层，在其上形成第二绝缘层，覆盖第一绝缘基板的整个表面。 该三层结构构成开关元件阵列。 多个第二电极在与第一方向交叉的第二方向上平行布置在第二绝缘电极上。 因此，夹在第一和第二电极之间的开关元件阵列用于驱动液晶层。

公开(公告)号：US5075674A

公开(公告)日：1991-12-24

申请号：US273251

申请日：1988-11-18

申请人： Mikio Katayama ,  Hirohisa Tanaka ,  Yasunori Shimada ,  Hiroshi Morimoto

发明人： Mikio Katayama ,  Hirohisa Tanaka ,  Yasunori Shimada ,  Hiroshi Morimoto

IPC分类号： G02F1/1362 ,  G02F1/1368

CPC分类号： G02F1/1368 ,  G02F1/13624 ,  G02F2001/136263 ,  G02F2001/136268

摘要： An active matrix substrate for the liquid crystal display has a switching circuit for switching on each of picture elements which includes a corresponding gate bus line, source bus line and a switching transistor. Further, the switching circuit includes at least one redundant structure to avoid inoperativeness of the switching circuit.

公开(公告)号：US5672251A

公开(公告)日：1997-09-30

申请号：US408976

申请日：1995-03-23

申请人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

发明人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

IPC分类号： C23C14/02 ,  G02F1/1362 ,  H01L21/28 ,  H01L21/336 ,  H01L21/48 ,  H01L23/14 ,  H01L29/49 ,  H01L29/786 ,  C23C14/34 ,  C23C14/48 ,  H01L21/02 ,  H01L21/265

CPC分类号： H01L29/66765 ,  C23C14/022 ,  G02F1/136286 ,  H01L21/28008 ,  H01L21/4846 ,  H01L23/14 ,  H01L29/4908 ,  H01L29/78603 ,  H01L2924/0002

摘要： The method for producing a metallic wiring board of this invention comprises the steps of: implanting nitrogen on a surface of a substrate; forming a metallic film including, as a main component, one of Ta and Nb on the surface of the substrate where nitrogen is implanted by a sputtering method to form a metallic wiring by patterning the metallic film; and forming an insulating film by anodic oxidation of a surface of the metallic wiring. In the step of forming a metallic wiring form Ta or Nb on a substrate or a protective layer including nitrogen to anodic-oxidize the surface of the metallic wiring, Ta ions or Nb ions do not enter the substrate. Further, the substrate or a protective layer is doped with nitrogen, and a Ta layer is formed by the sputtering method thereon. The sputtering method has a characteristic that a material contained in the substrate is mixed into a film formed in the initial stage of the coating. Therefore, the doped nitrogen enters the Ta film, and a thin .alpha.-Ta layer is formed on the substrate or the protective film. The Ta layer to be epitaxially grown thereon is an .alpha.-Ta layer including no impurity. Thus, a Ta layer with a specific resistance of about 25 .mu..OMEGA.cm is obtained.

摘要翻译： 本发明的金属线路板的制造方法包括以下步骤：在基板的表面上注入氮气; 通过溅射法形成金属膜，该金属膜包括通过溅射法在其上注入氮的衬底的表面上的Ta和Nb中的一个作为主要成分，通过图案化金属膜形成金属布线; 以及通过金属布线的表面的阳极氧化形成绝缘膜。 在基板或包括氮的保护层上形成金属配线形式的Ta或Nb的步骤中，对金属布线的表面进行阳极氧化，Ta离子或Nb离子不会进入基板。 此外，衬底或保护层掺杂有氮，并且通过其上的溅射方法形成Ta层。 溅射法具有将包含在基板中的材料混合到在涂层的初始阶段形成的膜的特征。 因此，掺杂氮气进入Ta膜，在基板或保护膜上形成薄的α-Ta层。 要外延生长的Ta层是不含杂质的α-Ta层。 因此，得到电阻率约为25微米欧米伽厘米的Ta层。

公开(公告)号：US5518936A

公开(公告)日：1996-05-21

申请号：US403125

申请日：1995-03-13

申请人： Tomohiko Yamamoto ,  Yasunori Shimada ,  Hiroshi Morimoto

发明人： Tomohiko Yamamoto ,  Yasunori Shimada ,  Hiroshi Morimoto

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1365 ,  G02F1/1368 ,  H01L21/265 ,  H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/336 ,  H01L23/52 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L45/00 ,  H01L49/02 ,  H05K1/03 ,  H05K3/38

CPC分类号： H01L29/66765 ,  H01L21/28008 ,  H01L21/31683 ,  H01L29/4908 ,  H01L45/00 ,  G02F2001/136295

摘要： A method for producing metal wirings on an insulating substrate is disclosed. The method comprises the steps of forming a metal wiring layer of a predetermined shape on a predetermined position of the insulating substrate, the metal wiring layer being made of a metal capable of being oxidized; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.

摘要翻译： 公开了一种在绝缘基板上制造金属布线的方法。 该方法包括以下步骤：在绝缘基板的预定位置上形成预定形状的金属布线层，金属布线层由能被氧化的金属制成; 用杂质元素注入金属布线层; 以及通过在注入杂质元素之后氧化金属布线层的表面而形成绝缘层。

公开(公告)号：US5434363A

公开(公告)日：1995-07-18

申请号：US086708

申请日：1993-07-07

申请人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

发明人： Masahito Goto ,  Hiroshi Morimoto ,  Yasunori Shimada ,  Takayoshi Nagayasu ,  Mitsuaki Hirata ,  Yoshitaka Hibino ,  Tomohiko Yamamoto

IPC分类号： G02F1/13 ,  C23C14/02 ,  C23C14/18 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/48 ,  H01L23/15 ,  H01L29/49 ,  H01L29/786 ,  H05K1/09

CPC分类号： G02F1/13439 ,  C23C14/022 ,  G02F1/136286 ,  H01L21/4846 ,  H01L23/15 ,  H01L29/4908 ,  H01L29/78603 ,  G02F1/1362 ,  H01L2924/0002

摘要： A metallic wiring board includes nitrogen implanted in a surface of a substrate or a protective layer including nitrogen formed on the substrate upon which is formed a metallic film including, as a main component, one of Ta and Nb. An insulating film covering the metallic wiring is formed by anodic oxidation. The nitrogen in the substrate or the protective layer prevents Ta (or Nb) ions from entering the substrate during the anodic oxidation of the metallic wiring. As a result, insulating properties of the substrate are not degraded during the oxidation.

摘要翻译： 金属布线板包括注入到基板表面的氮或包含形成在基板上的氮的保护层，在该基板上形成有作为主要成分的Ta和Nb之一的金属膜。 通过阳极氧化形成覆盖金属布线的绝缘膜。 在金属布线的阳极氧化期间，衬底或保护层中的氮防止了Ta（或Nb）离子进入衬底。 结果，在氧化过程中，基板的绝缘性不会降低。

公开(公告)号：US5286659A

公开(公告)日：1994-02-15

申请号：US813385

申请日：1991-12-26

申请人： Yasuhiro Mitani ,  Katsumara Ikubo ,  Yasunori Shimada ,  Hirohisa Tanaka ,  Hiroshi Morimoto ,  Yutaka Nishi ,  Tomohiko Yamamoto ,  Kenichi Nishimura

发明人： Yasuhiro Mitani ,  Katsumara Ikubo ,  Yasunori Shimada ,  Hirohisa Tanaka ,  Hiroshi Morimoto ,  Yutaka Nishi ,  Tomohiko Yamamoto ,  Kenichi Nishimura

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675

摘要： A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.

摘要翻译： 一种使用在栅绝缘层覆盖的绝缘基板上具有栅电极的薄膜晶体管制造有源矩阵基板的方法，栅极绝缘层上的半导体层，半导体层上的沟道保护层，具有 通过插入栅极绝缘层，半导体层和沟道保护层覆盖栅电极的部分，以及具有覆盖栅电极的部分的源电极，插入栅极绝缘层，该方法增强晶体管特性 的有源矩阵基板，具有最小的泄漏和去除由电子和空穴的存在产生的截止电流。

公开(公告)号：US5281554A

公开(公告)日：1994-01-25

申请号：US49595

申请日：1993-04-20

申请人： Yasunori Shimada ,  Hiroshi Morimoto

发明人： Yasunori Shimada ,  Hiroshi Morimoto

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/283

CPC分类号： H01L29/66765 ,  H01L21/28079 ,  H01L21/2855 ,  Y10S148/158

摘要： A method for producing a semiconductor device including forming an electrode or an electrode wiring by forming a tantalum thin film by sputtering is provided. In this method, a krypton gas in which nitrogen is mixed as a reactive gas is used as a sputtering gas, and a product of the pressure of the sputtering gas and a target-substrate distance is set in the range of 0.01 m.Pa to 0.08 m.Pa.

摘要翻译： 提供一种通过溅射形成钽薄膜来形成电极或电极布线的半导体器件的制造方法。 在该方法中，将作为反应性气体混合有氮的氪气用作溅射气体，将溅射气体的压力与目标基板间距离的乘积设定在0.01mPa·s〜 0.08 m.Pa.

公开(公告)号：US5594259A

公开(公告)日：1997-01-14

申请号：US338195

申请日：1994-11-09

申请人： Yasunori Shimada ,  Masahito Goto ,  Hisashi Saito ,  Koji Taniguchi

发明人： Yasunori Shimada ,  Masahito Goto ,  Hisashi Saito ,  Koji Taniguchi

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L23/52 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/66765 ,  H01L21/28008 ,  H01L29/4908

摘要： A semiconductor device includes an insulating substrate; and an electrode wiring provided on an area of the insulating substrate. The electrode wiring is formed of a material selected from the group consisting of an alloy of Ta and Nb, Nb, and a metal mainly including Nb. A method for producing a semiconductor device includes the steps of forming a layer including Nb doped with nitrogen on an insulating substrate by a sputtering method in an atmosphere of an inert gas including nitrogen, and then patterning the layer to form an electrode wiring on an area of the insulating substrate; and forming an oxide film at a portion of the electrode wiring by anodization, the portion including at least a surface thereof.

摘要翻译： 半导体器件包括绝缘衬底; 以及设置在绝缘基板的区域上的电极布线。 电极布线由选自Ta和Nb的合金，Nb和主要包含Nb的金属组成的组中的材料形成。 一种制造半导体器件的方法包括以下步骤：在包括氮的惰性气体的气氛中，通过溅射法在绝缘基板上形成包含Nb的Nb的层，然后构图该层以在区域上形成电极布线 的绝缘基板; 以及通过阳极氧化在所述电极布线的一部分形成氧化膜，所述部分至少包括其表面。

公开(公告)号：US5439837A

公开(公告)日：1995-08-08

申请号：US359192

申请日：1994-12-19

申请人： Akihiro Hata ,  Yasunori Shimada

发明人： Akihiro Hata ,  Yasunori Shimada

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/84 ,  H01L29/786 ,  H01L21/86

CPC分类号： H01L29/78621 ,  H01L29/66757

摘要： Using a gate electrode formed on a semiconductor film as a mask, impurity ions are implanted into the semiconductor film. Thereafter, a photoresist film is formed on the substrate including the gate electrode. The photoresist film on the gate electrode is then exposed to light from a back side of the gate electrode. By this self-alignment method, a resist pattern narrower than the gate electrode is formed. Then, the gate electrode is narrowed through the etching thereof using the photoresist pattern as a mask, whereby an offset gate structure of a thin-film transistor is obtained.

摘要翻译： 使用形成在半导体膜上的栅电极作为掩模，将杂质离子注入到半导体膜中。 此后，在包括栅电极的基板上形成光致抗蚀剂膜。 然后将栅电极上的光致抗蚀剂膜从栅电极的背面曝光。 通过该自对准方法，形成比栅电极窄的抗蚀剂图案。 然后，通过使用光致抗蚀剂图案作为掩模，通过其蚀刻使栅电极变窄，由此获得薄膜晶体管的偏移栅极结构。

公开(公告)号：US5805252A

公开(公告)日：1998-09-08

申请号：US535952

申请日：1995-09-28

申请人： Yasunori Shimada ,  Seiichi Mitsui

发明人： Yasunori Shimada ,  Seiichi Mitsui

IPC分类号： G02F1/1335 ,  G02F1/1343

CPC分类号： G02F1/133553 ,  G02F2203/02

摘要： A reflection type liquid crystal display comprises a first substrate including a rough portion formed on a surface thereof and a reflection electrode formed on the rough portion; a second substrate including a counter electrode formed thereon; and a liquid crystal layer interposed between the first and second substrates, driven by the reflection electrode and the counter electrode to perform a display. The reflection electrode is made of aluminum or aluminum alloy, and the reflection electrode includes surface oxidation layer having at least 5 nm thickness. The first substrate includes a vertical alignment film made of insulating material formed on the surface oxidation layer of the reflection electrode.

摘要翻译： 反射型液晶显示器包括：第一基板，包括形成在其表面上的粗糙部分和形成在粗糙部分上的反射电极; 第二基板，其包括形成在其上的对电极; 以及插入在第一和第二基板之间的液晶层，由反射电极和对电极驱动以进行显示。 反射电极由铝或铝合金制成，反射电极包括具有至少5nm厚度的表面氧化层。 第一基板包括由形成在反射电极的表面氧化层上的绝缘材料制成的垂直取向膜。