公开(公告)号：US20120119254A1

公开(公告)日：2012-05-17

申请号：US13357980

申请日：2012-01-25

申请人： Yong Tae MOON ,  Yong Seon Song ,  Sung Hoon Jung ,  Joong Seo Park ,  Sang Jun Lee ,  Jeong Tak Oh ,  Rak Jun Choi

发明人： Yong Tae MOON ,  Yong Seon Song ,  Sung Hoon Jung ,  Joong Seo Park ,  Sang Jun Lee ,  Jeong Tak Oh ,  Rak Jun Choi

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/025 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type first semiconductor layer, an active layer, a second conductive type second semiconductor layer, a reliability enhancement layer, and a second conductive type third semiconductor layer. The active layer is disposed on the first conductive type first semiconductor layer. The second conductive type second semiconductor layer is disposed on the active layer. The reliability enhancement layer is disposed on the second conductive type second semiconductor layer. The second conductive type third semiconductor layer is disposed on the reliability enhancement layer and comprises a light extraction pattern. The reliability enhancement layer and the active layer are spaced apart from each other by a distance of 0.3 μm to 5 μm.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括第一导电型第一半导体层，有源层，第二导电型第二半导体层，可靠性增强层和第二导电型第三半导体层。 有源层设置在第一导电类型的第一半导体层上。 第二导电型第二半导体层设置在有源层上。 可靠性增强层设置在第二导电型第二半导体层上。 第二导电类型的第三半导体层设置在可靠性增强层上并且包括光提取图案。 可靠性增强层和有源层彼此隔开0.3μm至5μm的距离。

公开(公告)号：US09178108B2

公开(公告)日：2015-11-03

申请号：US12979012

申请日：2010-12-27

申请人： Yong Tae Moon ,  Jeong Sik Lee ,  Joong Seo Park ,  Ho Ki Kwon ,  Seoung Hwan Park

发明人： Yong Tae Moon ,  Jeong Sik Lee ,  Joong Seo Park ,  Ho Ki Kwon ,  Seoung Hwan Park

IPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/38 ,  H01L33/12

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/382

摘要： The embodiment relates to a light emitting device and a light emitting device package, wherein the light emitting device includes a first conduction type semiconductor layer, an active layer formed on the first conduction type semiconductor layer, and a second conduction type semiconductor layer formed on the active layer, wherein the active layer includes a quantum well layer and a quantum barrier layer, and a face direction lattice constant of the first conduction type semiconductor layer or the second conduction type semiconductor layer is greater than the face direction lattice constant of the quantum barrier layer and smaller than the face direction lattice constant of the quantum well layer.

摘要翻译： 该实施例涉及发光器件和发光器件封装，其中发光器件包括第一导电类型半导体层，形成在第一导电类型半导体层上的有源层和形成在第一导电型半导体层上的第二导电类型半导体层 活性层，其中所述有源层包括量子阱层和量子势垒层，并且所述第一导电类型半导体层或所述第二导电类型半导体层的面向晶格常数大于所述量子势垒的面向晶格常数 并且小于量子阱层的面向晶格常数。

公开(公告)号：US07863178B2

公开(公告)日：2011-01-04

申请号：US10542485

申请日：2004-08-21

申请人： Tae-Kyung Yoo ,  Joong Seo Park ,  Eun Hyun Park

发明人： Tae-Kyung Yoo ,  Joong Seo Park ,  Eun Hyun Park

IPC分类号： H01L21/3205

CPC分类号： H01L33/007 ,  C23C16/303 ,  C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262

摘要： The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.

摘要翻译： 本发明涉及一种通过新的p型AlGaInN：Mg生长方法制造的AlGaInN基光学器件及其制造方法，包括使用NH 3和肼基源生长的p型氮化物半导体层作为 氮前体，因此不需要附加的用于提取氢的退火方法，因此该方法简单，并且可以防止活性层被随后的退火热损伤。

公开(公告)号：US20050099364A1

公开(公告)日：2005-05-12

申请号：US10956376

申请日：2004-10-04

申请人： Yun Kwon Jung ,  Joong Seo Park ,  Jin Young Kim ,  Sung Gon Shin ,  Won Tae Kim ,  Bong Koo Kang

发明人： Yun Kwon Jung ,  Joong Seo Park ,  Jin Young Kim ,  Sung Gon Shin ,  Won Tae Kim ,  Bong Koo Kang

IPC分类号： G09G3/20 ,  G09G3/288 ,  G09G3/291 ,  G09G3/294 ,  G09G3/296 ,  G09G3/298 ,  G09G5/00 ,  G09G3/28

CPC分类号： G09G3/2965 ,  G09G2330/06

摘要： The present invention relates to a plasma display panel, and more particularly, to an energy recovery apparatus of a plasma display panel and method thereof. According to a first embodiment of the present invention, an energy recovery apparatus of a plasma display panel includes a resonance circuit making a sustain voltage resonate to generate a voltage increasing to a double voltage of the sustain voltage, a diode limiting the voltage generated from the resonance circuit not to exceed the sustain voltage, and a panel supplied with the sustain voltage from the resonance circuit under a control of the diode. Therefore, the present invention provides an energy recovery apparatus of a plasma display panel and method thereof, by which sustain discharge can occur stably without degrading efficiency and by which efficiency degradation and malfunction caused by noise due to a voltage variation can be prevented.

摘要翻译： 等离子体显示面板技术领域本发明涉及等离子体显示面板，更具体地，涉及等离子体显示面板的能量回收装置及其方法。 根据本发明的第一实施例，等离子体显示面板的能量回收装置包括使维持电压谐振的谐振电路，以产生升高到维持电压的双电压的电压，二极管限制从 谐振电路不超过维持电压，并且在二极管的控制下提供具有来自谐振电路的维持电压的面板。 因此，本发明提供了一种等离子体显示面板的能量回收装置及其方法，能够在不降低效率的情况下稳定地进行维持放电，并且能够防止由电压变化引起的噪声引起的效率劣化和故障。

公开(公告)号：US07518574B2

公开(公告)日：2009-04-14

申请号：US11591587

申请日：2006-11-02

申请人： Joong Seo Park ,  Yun Kwon Jung

发明人： Joong Seo Park ,  Yun Kwon Jung

IPC分类号： G09G3/28

CPC分类号： G09G3/2965 ,  G09G3/294

摘要： An energy recovery circuit for a plasma display panel charges a panel capacitor using energy within an inductor and recovers the energy from the panel capacitor. The energy recovery circuit supplies the panel capacitor with a clamping voltage enabling a potential of the panel capacitor to be constantly maintained. A controller controls the energy recovery circuit to supply the clamping voltage to the panel capacitor within a period taken to discharge a current of the inductor from a maximum value to a current level greater than zero. The charging timing point of the panel capacitor occurs prior to the current IL of the inductor L being discharged to zero and/or prior to the panel capacitor Cp being charged up to the sustain potential Vs.

摘要翻译： 用于等离子体显示面板的能量恢复电路使用电感器内的能量对面板电容器充电，并从面板电容器中恢复能量。 能量恢复电路为面板电容器提供钳位电压，从而能够持续保持面板电容器的电位。 控制器控制能量恢复电路，以在将电感器的电流从最大值放电至大于零的电流水平所需的时间内向钳位电容器提供钳位电压。 面板电容器的充电定时点发生在电感器L的电流IL被放电到零之前和/或之前，面板电容器Cp被充电到维持电位Vs之前。

公开(公告)号：US20060138446A1

公开(公告)日：2006-06-29

申请号：US10542485

申请日：2004-08-21

申请人： Tae-Kyung Yoo ,  Joong Seo Park ,  Eun Hyun Park

发明人： Tae-Kyung Yoo ,  Joong Seo Park ,  Eun Hyun Park

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/007 ,  C23C16/303 ,  C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262

摘要： The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGalnN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.

摘要翻译： 本发明涉及一种通过新的p型AlGalnN：Mg生长方法制造的AlGaInN基光学器件及其制造方法，包括使用NH 3和肼基源生长的p型氮化物半导体层作为 氮前体，因此不需要附加的用于提取氢的退火方法，因此该方法简单，并且可以防止活性层被随后的退火热损伤。

公开(公告)号：US20090032835A1

公开(公告)日：2009-02-05

申请号：US12183351

申请日：2008-07-31

申请人： Joong Seo Park

发明人： Joong Seo Park

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02658

摘要： The present disclosure provides a III-nitride semiconductor light emitting device, including: a plurality of III-nitride semiconductor layers including an active layer for generating light by recombination of electrons and holes; and a substrate used to grow the plurality of III-nitride semiconductor layers, and including a protrusion with two opposite sides rounded.

摘要翻译： 本公开内容提供了一种III族氮化物半导体发光器件，包括：多个III族氮化物半导体层，包括通过电子和空穴的复合产生光的有源层; 以及用于生长多个III族氮化物半导体层的衬底，并且包括具有两个相对侧的突起。

公开(公告)号：US07355350B2

公开(公告)日：2008-04-08

申请号：US10968060

申请日：2004-10-20

申请人： Joong Seo Park ,  Yun Kwon Jung

发明人： Joong Seo Park ,  Yun Kwon Jung

IPC分类号： G09G3/10 ,  G09G3/28

CPC分类号： G09G3/2965 ,  G09G3/294

摘要： An energy recovery circuit for a plasma display panel charges a panel capacitor using energy within an inductor and recovers the energy from the panel capacitor. The energy recovery circuit supplies the panel capacitor with a clamping voltage enabling a potential of the panel capacitor to be constantly maintained. A controller controls the energy recovery circuit to supply the clamping voltage to the panel capacitor within a period taken to discharge a current of the inductor from a maximum value to a current level greater than zero. The charging timing point of the panel capacitor occurs prior to the current IL of the inductor L being discharged to zero and/or prior to the panel capacitor Cp being charged up to the sustain potential Vs.

摘要翻译： 用于等离子体显示面板的能量恢复电路使用电感器内的能量对面板电容器充电，并从面板电容器中恢复能量。 能量恢复电路为面板电容器提供钳位电压，从而能够持续保持面板电容器的电位。 控制器控制能量恢复电路，以在将电感器的电流从最大值放电至大于零的电流水平所需的时间内向钳位电容器提供钳位电压。 面板电容器的充电定时点发生在电感器L的电流I L被放电到零之前和/或在面板电容器Cp被充电到维持电位Vs之前之前。

公开(公告)号：US08575635B2

公开(公告)日：2013-11-05

申请号：US13112022

申请日：2011-05-20

申请人： Jong Hak Won ,  Sun Kyung Kim ,  Kyoung Woo Jo ,  Joong Seo Park

发明人： Jong Hak Won ,  Sun Kyung Kim ,  Kyoung Woo Jo ,  Joong Seo Park

IPC分类号： H01L33/00

CPC分类号： H01L33/0066 ,  H01L21/0237 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/44 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括衬底，包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，发光结构设置在衬底上，非金属图案设置在衬底和 所述有源层，所述非金属图案与所述基板间隔开，以及设置在所述非金属图案的侧表面上的气隙。

公开(公告)号：US20110291070A1

公开(公告)日：2011-12-01

申请号：US13112022

申请日：2011-05-20

申请人： Jong Hak WON ,  Sun Kyung Kim ,  Kyoung Woo Jo ,  Joong Seo Park

发明人： Jong Hak WON ,  Sun Kyung Kim ,  Kyoung Woo Jo ,  Joong Seo Park

IPC分类号： H01L33/06

CPC分类号： H01L33/0066 ,  H01L21/0237 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/44 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括衬底，包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，发光结构设置在衬底上，非金属图案设置在衬底和 所述有源层，所述非金属图案与所述基板间隔开，以及设置在所述非金属图案的侧表面上的气隙。