摘要:
A piezoelectric filter and other electronic components are constructed such that the accuracy of frequency adjustment can be increased and an improvement in efficiency of the adjustment operation can be achieved. The piezoelectric filter includes a plurality of piezoelectric resonators including a substrate and a vibration portion provided on the substrate, the vibration portion having a structure in which the top and bottom surfaces of a thin film portion including at least one piezoelectric thin film are sandwiched between at least a pair of an upper electrode and a lower electrode facing each other, wherein the upper electrode of a predetermined piezoelectric resonator is made of a material having susceptibility to etching that is different from that of the upper electrode of the other piezoelectric resonator.
摘要:
A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.
摘要:
A piezoelectric thin-film resonator includes a supporting substrate. A piezoelectric thin-film is formed on the supporting substrate. A lower electrode and an upper electrode are formed with the piezoelectric thin-film therebetween. The stiffness of at least one of the lower and upper electrodes is higher than that of the piezoelectric thin-film.
摘要:
A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
摘要:
A piezoelectric resonator includes a substrate and a plurality of vibrating portions constructed such that a thin film portion having a piezoelectric thin film of one or more layers is sandwiched by at least a pair of upper electrodes and a lower electrode, which are opposed to each other, on the upper and lower surfaces of the thin film portion. The vibrating portions are separated by at least a distance equal to about &lgr;/2, where &lgr; represents the vibration wavelength, from elements affecting the vibration characteristics.
摘要:
A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
摘要翻译:提供具有稳定的谐振频率的温度特性的压电薄膜谐振器,其制造方法和使用该压电薄膜谐振器的通信装置。 压电薄膜谐振器设置有具有开口的第一绝缘膜和第二绝缘膜的基板,所述第一和第二绝缘膜设置在基板的一个表面上,同时覆盖开口并且主要包括SiO 2和Al 2 O 3分别具有氧缺陷并处于非晶状态的Al 2 O 3 N 3,以及压电薄膜 其设置在第二绝缘膜上并夹在电极之间并且主要包括ZnO。
摘要:
A piezoelectric resonator includes a substrate, a vibration unit disposed on the substrate and having a structure in which at least one pair of an upper electrode and a lower electrode opposed to each other, the upper and lower electrodes sandwiching the upper and lower surfaces of an internal thin-film portion including at least one layer of a piezoelectric thin-film, and an external thin-film portion provided under the lower electrode and including at least one layer of a piezoelectric thin-film or a dielectric thin-film, the vibration unit being vibrated in an n-th harmonic (n is an integer of 2 or more), the upper electrode and the lower electrode being provided substantially in the positions of the loops of the n-th harmonic.
摘要:
A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
摘要翻译:提供具有稳定的谐振频率的温度特性的压电薄膜谐振器,其制造方法和使用该压电薄膜谐振器的通信装置。 压电薄膜谐振器设置有具有开口的第一绝缘膜和第二绝缘膜的基板,所述第一和第二绝缘膜设置在基板的一个表面上,同时覆盖开口并且主要包括SiO 2和Al 2 O 3分别具有氧缺陷并处于非晶状态的Al 2 O 3 N 3,以及压电薄膜 其设置在第二绝缘膜上并夹在电极之间并且主要包括ZnO。
摘要:
A piezoelectric resonator includes a supporting substrate having an opening or a concavity, a vibrating section in which at least one pair of an upper electrode and a lower electrode oppose each other so as to sandwich an upper surface and a lower surface of at least one layer of piezoelectric thin film, the vibrating portion being formed over the opening or the concavity, and a heat dissipating film disposed over at least one of the upper electrode and the piezoelectric thin film so as not to cover the vibrating section.
摘要:
A method for manufacturing a thin film is performed such that the internal stress is controlled while the preferred orientation property is maintained at a high value. An AlN piezoelectric thin film is formed on a substrate by a sputtering method using a mixed gas including Ar and nitrogen, wherein the mixed gas has a nitrogen flow rate ratio, that is, nitrogen flow rate relative to the sum of the Ar flow rate and the nitrogen flow rate, of about 10% to about 75%.