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    Semiconductor wafer and method of manufacturing semiconductor device
    1.
    发明申请
    Semiconductor wafer and method of manufacturing semiconductor device 有权
    半导体晶片及半导体器件的制造方法

    公开(公告)号：US20060038260A1

    公开(公告)日：2006-02-23

    申请号：US11245059

    申请日：2005-10-07

    申请人： Yoshihiko Nemoto ,  Masahiro Sunohara ,  Kenji Takahashi

    发明人： Yoshihiko Nemoto ,  Masahiro Sunohara ,  Kenji Takahashi

    IPC分类号： H01L29/06 ,  H01L23/58 ,  H01L23/544

    CPC分类号： H01L21/6835 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  Y10S438/977

    摘要： A conveyance system for a semiconductor wafer can be used without any change before and after a support plate is adhered to the wafer. Also, the finish accuracy of the wafer and the positioning accuracy between the wafer and the support plate can be relaxed, thus improving the manufacturing efficiency. The wafer is formed on its peripheral portion with a stepped portion, which is deeper than a finished thickness obtained by partial removal of the rear surface thereof and which can be eliminated by the partial removal of the wafer rear surface. The separation portion has a length which extends radially outward from a flat surface, and which is greater than a total sum of a maximum-minimum difference between the finish allowances of the diameters of the wafer and the support plate, and a maximum value of a positioning error between the wafer and the support plate generated upon adhesion thereof.

    摘要翻译： 在支撑板粘附到晶片之前和之后，可以不用改变地使用半导体晶片的输送系统。 此外，晶片的精加工精度和晶片与支撑板之间的定位精度可以被放宽，从而提高了制造效率。 晶片在其周边部分上形成有阶梯部分，其比通过部分去除其后表面获得的成品厚度更深，并且可以通过部分去除晶片后表面而消除晶片。 分离部分具有从平坦表面径向向外延伸的长度，并且大于晶片和支撑板的直径的精加工余量之间的最大 - 最小差异的总和以及最大值 在粘合时产生的晶片和支撑板之间的定位误差。

    Semiconductor wafer having a separation portion on a peripheral area
    2.
    发明授权
    Semiconductor wafer having a separation portion on a peripheral area 有权
    半导体晶片在周边区域具有分离部分

    公开(公告)号：US07709932B2

    公开(公告)日：2010-05-04

    申请号：US11245059

    申请日：2005-10-07

    申请人： Yoshihiko Nemoto ,  Masahiro Sunohara ,  Kenji Takahashi

    发明人： Yoshihiko Nemoto ,  Masahiro Sunohara ,  Kenji Takahashi

    IPC分类号： H01L29/06

    CPC分类号： H01L21/6835 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  Y10S438/977

    摘要： A conveyance system for a semiconductor wafer can be used without any change before and after a support plate is adhered to the wafer. Also, the finish accuracy of the wafer and the positioning accuracy between the wafer and the support plate can be relaxed, thus improving the manufacturing efficiency. The wafer is formed on its peripheral portion with a stepped portion, which is deeper than a finished thickness obtained by partial removal of the rear surface thereof and which can be eliminated by the partial removal of the wafer rear surface. The separation portion has a length which extends radially outward from a flat surface, and which is greater than a total sum of a maximum-minimum difference between the finish allowances of the diameters of the wafer and the support plate, and a maximum value of a positioning error between the wafer and the support plate generated upon adhesion thereof.

    摘要翻译： 在支撑板粘附到晶片之前和之后，可以不用改变地使用半导体晶片的输送系统。 此外，晶片的精加工精度和晶片与支撑板之间的定位精度可以被放宽，从而提高制造效率。 晶片在其周边部分上形成有阶梯部分，其比通过部分去除其后表面获得的成品厚度更深，并且可以通过部分去除晶片后表面而消除晶片。 分离部分具有从平坦表面径向向外延伸的长度，并且其长度大于晶片和支撑板的直径的精加工余量之间的最大 - 最小差值的总和以及最大值 在粘合时产生的晶片和支撑板之间的定位误差。

    Semiconductor wafer and method of manufacturing a semiconductor device using a separation portion on a peripheral area of the semiconductor wafer
    3.
    发明授权
    Semiconductor wafer and method of manufacturing a semiconductor device using a separation portion on a peripheral area of the semiconductor wafer 有权
    半导体晶片及使用半导体晶片周边区域的分离部分制造半导体器件的方法

    公开(公告)号：US07195988B2

    公开(公告)日：2007-03-27

    申请号：US10751657

    申请日：2004-01-06

    申请人： Yoshihiko Nemoto ,  Masahiro Sunohara ,  Kenji Takahashi

    发明人： Yoshihiko Nemoto ,  Masahiro Sunohara ,  Kenji Takahashi

    IPC分类号： H01L21/46 ,  H01L21/30

    CPC分类号： H01L21/6835 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  Y10S438/977

    摘要： A conveyance system for a semiconductor wafer can be used without any change before and after a support plate is adhered to the wafer. Also, the finish accuracy of the wafer and the positioning accuracy between the wafer and the support plate can be relaxed, thus improving the manufacturing efficiency. The wafer is formed on its peripheral portion with a stepped portion, which is deeper than a finished thickness obtained by partial removal of the rear surface thereof and which can be eliminated by the partial removal of the wafer rear surface. The separation portion has a length which extends radially outward from a flat surface, and which is greater than a total sum of a maximum-minimum difference between the finish allowances of the diameters of the wafer and the support plate, and a maximum value of a positioning error between the wafer and the support plate generated upon adhesion thereof.

    摘要翻译： 在支撑板粘附到晶片之前和之后，可以不用改变地使用半导体晶片的输送系统。 此外，晶片的精加工精度和晶片与支撑板之间的定位精度可以被放宽，从而提高制造效率。 晶片在其周边部分上形成有阶梯部分，其比通过部分去除其后表面获得的成品厚度更深，并且可以通过部分去除晶片后表面而消除晶片。 分离部分具有从平坦表面径向向外延伸的长度，并且其长度大于晶片和支撑板的直径的精加工余量之间的最大 - 最小差值的总和以及最大值 在粘合时产生的晶片和支撑板之间的定位误差。

    Semiconductor wafer and method of manufacturing semiconductor device
    4.
    发明申请
    Semiconductor wafer and method of manufacturing semiconductor device 有权
    半导体晶片及半导体器件的制造方法

    公开(公告)号：US20050023647A1

    公开(公告)日：2005-02-03

    申请号：US10751657

    申请日：2004-01-06

    申请人： Yoshihiko Nemoto ,  Masahiro Sunohara ,  Kenji Takahashi

    发明人： Yoshihiko Nemoto ,  Masahiro Sunohara ,  Kenji Takahashi

    IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/58 ,  H01L21/68 ,  H01L21/78 ,  H01L23/544 ,  H01L23/58 ,  H01L27/12 ,  H01L29/06

    CPC分类号： H01L21/6835 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  Y10S438/977

    摘要： A conveyance system for a semiconductor wafer can be used without any change before and after a support plate is adhered to the wafer. Also, the finish accuracy of the wafer and the positioning accuracy between the wafer and the support plate can be relaxed, thus improving the manufacturing efficiency. The wafer is formed on its peripheral portion with a stepped portion, which is deeper than a finished thickness obtained by partial removal of the rear surface thereof and which can be eliminated by the partial removal of the wafer rear surface. The separation portion has a length which extends radially outward from a flat surface, and which is greater than a total sum of a maximum-minimum difference between the finish allowances of the diameters of the wafer and the support plate, and a maximum value of a positioning error between the wafer and the support plate generated upon adhesion thereof.

    摘要翻译： 在支撑板粘附到晶片之前和之后，可以不用改变地使用半导体晶片的输送系统。 此外，晶片的精加工精度和晶片与支撑板之间的定位精度可以被放宽，从而提高制造效率。 晶片在其周边部分上形成有阶梯部分，其比通过部分去除其后表面获得的成品厚度更深，并且可以通过部分去除晶片后表面而消除晶片。 分离部分具有从平坦表面径向向外延伸的长度，并且其长度大于晶片和支撑板的直径的精加工余量之间的最大 - 最小差值的总和以及最大值 在粘合时产生的晶片和支撑板之间的定位误差。