Semiconductor device manufacturing method
    1.
    发明授权
    Semiconductor device manufacturing method 失效
    半导体器件制造方法

    公开(公告)号:US06713383B2

    公开(公告)日:2004-03-30

    申请号:US10207015

    申请日:2002-07-30

    IPC分类号: H01L214763

    摘要: A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF4 gas, a C2F6 gas and a NF3 gas. The surface of the copper (Cu) wiring layer is then exposed to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a fÀ-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (CxHy), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (CxHy), and a Cu diffusion preventing insulating film is formed on the copper (Cu) wiring layer.

    摘要翻译: 形成在半导体衬底上的铜(Cu)布线层的表面暴露于选自氨气,氮和氢的混合气体,CF4气体,C2F6气体和NF3气体中的等离子体气体 。 然后将铜(Cu)布线层的表面暴露于选自氨气,乙二胺气体,二 - 二酮气体,由氨气组成的混合气体的气体的气氛或等离子体 和烃气体(CxHy)以及由氮气和烃气体组成的混合气体(CxHy),在铜(Cu)配线层上形成Cu扩散防止绝缘膜。

    Semiconductor device and method of manufacturing the same
    4.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US06780790B2

    公开(公告)日:2004-08-24

    申请号:US10287549

    申请日:2002-11-05

    IPC分类号: H01L21469

    摘要: A semiconductor device having a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method includes supplying high frequency power of a frequency of 1 MHz or more to a first electrode, and holding a substrate on which copper wiring is formed on a second electrode facing the first electrode; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes while regulating gas pressure of the film forming gas to 1 Torr or less; and supplying high frequency power to either of the first and second electrodes to convert the film forming gas into a plasma, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react to form a barrier insulating film covering the surface of the substrate.

    摘要翻译: 通过等离子体增强CVD法形成具有覆盖铜布线的阻挡绝缘膜的半导体器件。 该方法包括向第一电极提供1MHz或更高频率的高频功率,并且在面向第一电极的第二电极上保持在其上形成有铜布线的基板; 在第一和第二电极之间提供含有烷基化合物和含氧气体的成膜气体,同时将成膜气体的气体压力调节至1托或更小; 并向第一和第二电极中的任一个提供高频电力,以将成膜气体转化为等离子体,并使成膜气体的烷基化合物和含氧气体反应,形成覆盖表面的阻挡绝缘膜 的基底。

    Manufacturing method of semiconductor device
    5.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US06649495B2

    公开(公告)日:2003-11-18

    申请号:US10164709

    申请日:2002-06-10

    IPC分类号: H01L2120

    摘要: The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film 35a on a substrate 21 subject to deposition, in which an electric power having a first frequency (f1) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film 35b having low relative dielectric constant on the barrier insulating film 35a, in which an electric power having a second frequency (f2) higher than the first frequency (f1) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction.

    摘要翻译: 半导体器件的制造方法技术领域本发明涉及一种半导体器件的制造方法,其中,在主要由铜膜构成的布线被涂覆的同时依次形成具有低相对介电常数的阻挡绝缘膜和主绝缘膜。 其结构包括以下步骤:在沉积的基板21上形成阻挡绝缘膜35a,其中具有第一频率(f1)的电力施加到至少含有含硅气体和氧气的第一成膜气体 以将所述第一成膜气体转化为等离子体并引起反应; 并且在隔离绝缘膜35a上形成具有低相对介电常数的主绝缘膜35b,其中具有比第一频率(f1)高的第二频率(f2)的电力施加到至少包含至少 含硅气体和含氧气体,以将第二成膜气体转化为等离子体并引起反应。