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20 条记录 (耗时 0.042 秒)

    Silica gel
    1.
    发明授权
    Silica gel 有权
    硅胶

    公开(公告)号：US06838068B2

    公开(公告)日：2005-01-04

    申请号：US09891412

    申请日：2001-06-27

    申请人： Yoshio Katsuro ,  Takashi Yamaguchi ,  Takayuki Yoshimori ,  Hanako Kato

    发明人： Yoshio Katsuro ,  Takashi Yamaguchi ,  Takayuki Yoshimori ,  Hanako Kato

    IPC分类号： C01B33/16 ,  C01B33/12

    CPC分类号： C01B33/163

    摘要： A method of producing a silica gel by hydrolyzing a silicon alkoxide and subjecting the resulting hydrogel to a hydrothermal treatment substantially without aging it is described. Also described in a silica gel produced by such a method and a silica gel which has the following characteristics: (a) the pore volume is from 0.6 to 1.6 ml/g, (b) the specific surface area is from 300 to 900 m2/g, (c) the mode diameter (Dmax) of pores is less than 20 nm, (d) the volume of pores having diameters within ±20% of Dmax is at least 50% of the total pore volume, (e) it is amorphous, and (f) the content of metal impurities is at most 500 ppm.

    摘要翻译： 描述了通过水解硅醇盐并使所得水凝胶基本上不老化而进行水热处理来生产硅胶的方法。 还描述在通过这种方法制备的硅胶和具有以下特征的硅胶中：（a）孔体积为0.6至1.6ml / g，（b）比表面积为300至900μm， （c）孔的模式直径（Dmax）小于20nm，（d）直径在±20％以内的孔的体积为总孔体积的至少50％，（e ）为非晶态，（f）金属杂质含量为500ppm以下。

    Silica gel
    2.
    发明授权
    Silica gel 有权
    硅胶

    公开(公告)号：US07074376B2

    公开(公告)日：2006-07-11

    申请号：US10922908

    申请日：2004-08-23

    申请人： Yoshio Katsuro ,  Takashi Yamaguchi ,  Takayuki Yoshimori ,  Hanako Kato

    发明人： Yoshio Katsuro ,  Takashi Yamaguchi ,  Takayuki Yoshimori ,  Hanako Kato

    IPC分类号： C01B33/12

    CPC分类号： C01B33/163

    摘要： A method of producing a silica gel by hydrolyzing a silicon alkoxide and subjecting the resulting hydrogel to a hydrothermal treatment substantially without aging it is described. Also described in a silica gel produced by such a method and a silica gel which has the following characteristics: (a) the pore volume is from 0.6 to 1.6 ml/g, (b) the specific surface area is from 300 to 900 m2/g, (c) the mode diameter (Dmax) of pores is less than 20 nm, (d) the volume of pores having diameters within ±20% of Dmax is at least 50% of the total pore volume, (e) it is amorphous, and (f) the content of metal impurities is at most 500 ppm.

    摘要翻译： 描述了通过水解硅醇盐并使所得水凝胶基本上不老化而进行水热处理来生产硅胶的方法。 还描述在通过这种方法制备的硅胶和具有以下特征的硅胶中：（a）孔体积为0.6至1.6ml / g，（b）比表面积为300至900μm， SUP> 2 / g，（c）孔的模式直径（Dmax）小于20nm，（d）直径在±20％以内的孔的体积为Dmax的至少50％ 孔体积，（e）是无定形的，（f）金属杂质含量为500ppm以下。

    Silica gel
    3.
    发明申请
    Silica gel 有权
    硅胶

    公开(公告)号：US20050019243A1

    公开(公告)日：2005-01-27

    申请号：US10922908

    申请日：2004-08-23

    申请人： Yoshio Katsuro ,  Takashi Yamaguchi ,  Takayuki Yoshimori ,  Hanako Kato

    发明人： Yoshio Katsuro ,  Takashi Yamaguchi ,  Takayuki Yoshimori ,  Hanako Kato

    IPC分类号： C01B33/16 ,  C01B33/12

    CPC分类号： C01B33/163

    摘要： A method of producing a silica gel by hydrolyzing a silicon alkoxide and subjecting the resulting hydrogel to a hydrothermal treatment substantially without aging it is described. Also described in a silica gel produced by such a method and a silica gel which has the following characteristics: (a) the pore volume is from 0.6 to 1.6 ml/g, (b) the specific surface area is from 300 to 900 m2/g, (c) the mode diameter (Dmax) of pores is less than 20 nm, (d) the volume of pores having diameters within ±20% of Dmax is at least 50% of the total pore volume, (e) it is amorphous, and (f) the content of metal impurities is at most 500 ppm.

    摘要翻译： 描述了通过水解硅醇盐并使所得水凝胶基本上不老化而进行水热处理来生产硅胶的方法。 还描述在通过这种方法制备的硅胶和具有以下特征的硅胶中：（a）孔体积为0.6至1.6ml / g，（b）比表面积为300至900μm， （c）孔的模式直径（Dmax）小于20nm，（d）直径在±20％以内的孔的体积为总孔体积的至少50％，（e ）为非晶态，（f）金属杂质含量为500ppm以下。

    Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member
    7.
    发明授权
    Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member 有权
    半导体发光器件部件，这种半导体发光器件部件的制造方法和使用这种半导体发光器件的半导体发光器件

    公开(公告)号：US08759840B2

    公开(公告)日：2014-06-24

    申请号：US12950128

    申请日：2010-11-19

    申请人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

    发明人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

    IPC分类号： H01L27/15

    CPC分类号： H01L33/56 ,  C08G77/04 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid state Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.

    摘要翻译： 提供透明性，耐光性和耐热性优异的半导体发光元件，即使长时间使用也能够密封半导体发光元件而不引起裂纹和剥离的半导体发光元件，其中半导体发光元件 （A）为固态Si核磁共振谱，选自（a）峰顶位于-40ppm〜0ppm的化学位移范围内的峰的至少一个峰，其全宽度 半峰值为0.3ppm〜3.0ppm，（b）峰顶位置在-80ppm以上且小于-40ppm的化学位移范围内，峰值全差为0.3ppm的峰 至5.0ppm，其中（B）硅含量为20重量％以上，（C）硅烷醇含量为0.1重量％〜10重量％。