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    Polishing method and apparatus
    1.
    发明授权
    Polishing method and apparatus 有权
    抛光方法和设备

    公开(公告)号：US06667238B1

    公开(公告)日：2003-12-23

    申请号：US09545504

    申请日：2000-04-07

    申请人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

    发明人： Norio Kimura ,  Mitsuhiko Shirakashi ,  Katsuhiko Tokushige ,  Masao Asami ,  Naoto Miyashita ,  Masako Kodera ,  Yoshitaka Matsui ,  Soichi Nadahara ,  Hiroshi Tomita

    IPC分类号： H01L2100

    CPC分类号： B24B37/345

    摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

    摘要翻译： 抛光装置用于化学机械抛光形成在诸如半导体晶片的基板上的铜（Cu）层，然后清洁抛光的基板。 抛光装置具有研磨部，该研磨部具有带有抛光面的转盘和用于保持基板的顶环，并将基板按压在研磨面上，以对其上具有半导体器件的表面进行抛光;以及清洗部， 被抛光 清洗部具有电解供水装置，用于向基板供给电解水，以清洗基板的抛光表面，同时向基板供应电解水。

    Apparatus and method for cleaning semiconductor substrate
    3.
    发明授权
    Apparatus and method for cleaning semiconductor substrate 有权
    用于清洁半导体衬底的装置和方法

    公开(公告)号：US06543080B1

    公开(公告)日：2003-04-08

    申请号：US09635848

    申请日：2000-08-11

    申请人： Hiroshi Tomita ,  Soichi Nadahara ,  Mitsuhiko Shirakashi ,  Kenya Ito ,  Yuki Inoue

    发明人： Hiroshi Tomita ,  Soichi Nadahara ,  Mitsuhiko Shirakashi ,  Kenya Ito ,  Yuki Inoue

    IPC分类号： B08B312

    CPC分类号： B08B3/12

    摘要： A semiconductor substrate cleaning apparatus and method are capable of efficiently removing contamination from both the obverse and reverse sides of a semiconductor substrate. A single cleaning liquid supply nozzle for supplying a cleaning liquid to both the obverse and reverse sides of a semiconductor substrate to be cleaned is placed at a distance from the outer peripheral edge of the substrate. An ultrasonic vibrator applies ultrasonic waves to both the obverse and reverse sides of the substrate. Four driving rollers are disposed in contact with the outer peripheral edge of the substrate. The driving rollers are adapte to rotate while being engaged with the outer peripheral edge of the substrate thereby drivingly rotating the substrate.

    摘要翻译： 半导体衬底清洁装置和方法能够有效地去除半导体衬底的正面和反面两侧的污染物。 将待清洗的半导体衬底的正面和反面两侧的清洗液供给单个清洗液供给喷嘴设置在与衬底的外周边缘一定距离处。 超声波振动器对基板的正反面施加超声波。 四个驱动辊设置成与基板的外周边缘接触。 驱动辊适于旋转，同时与基板的外周边缘接合，从而驱动旋转基板。

    Wafer drying apparatus and method with residual particle removability enhancement
    6.
    发明授权
    Wafer drying apparatus and method with residual particle removability enhancement 失效
    晶圆干燥装置和残留颗粒去除性提高方法

    公开(公告)号：US06286524B1

    公开(公告)日：2001-09-11

    申请号：US09257384

    申请日：1999-02-25

    申请人： Hisashi Okuchi ,  Hiroshi Tomita ,  Soichi Nadahara ,  Katsuya Okumura

    发明人： Hisashi Okuchi ,  Hiroshi Tomita ,  Soichi Nadahara ,  Katsuya Okumura

    IPC分类号： B08B704

    CPC分类号： H01L21/67034 ,  Y10S134/902

    摘要： A wafer dry cleaning method and apparatus capable of eliminating or suppressing adhesion of dust and particles on dried wafer surfaces while minimizing generation of water marks thereon. To achive this, the wafer dryer apparatus is configured including a surface cleaning/drying chamber structure which houses therein a set of spaced-apart silicon wafer workpieces. The dry chamber is operatively associated with a vacuum evacuation device for retaining the interior of this chamber at low pressures required. A water-drain device is provided for forcing water content separated off from the wafer surfaces to drain out of the drying vessel. During such wafer drying process, the wafers may be driven rotating at high speeds to thereby accelerate centrifugal spin-off of residual drops of water on wafer surfaces. Preferably, a chosen purge gas may be fed into the chamber during wafer rotation. The purge gas supply gets started substantially simultaneously upon activation of a vacuum pump for chamber evacuation, or after completion of such vacuum evacuation. In one illustrative embodiment ultrapure water may be used to rinse the wafers in the chamber.

    摘要翻译： 一种晶片干洗方法和装置，其能够消除或抑制灰尘和颗粒在干燥的晶片表面上的粘附，同时最小化其上的水痕的产生。 为了实现这一点，晶片干燥装置被构造成包括其中容纳一组间隔开的硅晶片工件的表面清洁/干燥室结构。 干燥室与真空排气装置可操作地相关联，用于将该室的内部保持在所需的低压。 设置排水装置，用于迫使从晶片表面分离的含水量从干燥容器排出。 在这样的晶片干燥过程中，晶片可被驱动高速旋转，从而加速晶片表面上剩余的水滴离心分离。 优选地，在晶片旋转期间可以将所选择的吹扫气体进料到室中。 在用于室抽真空的真空泵激活时或在完成这种真空排气之后，净化气体供应基本上同时启动。 在一个说明性实施例中，可以使用超纯水冲洗腔室中的晶片。

    Process for cleaning the interior of semiconductor substrate
    7.
    发明授权
    Process for cleaning the interior of semiconductor substrate 失效
    清洗半导体衬底内部的工艺

    公开(公告)号：US6059887A

    公开(公告)日：2000-05-09

    申请号：US54511

    申请日：1998-04-03

    申请人： Hisashi Muraoka ,  Hiroshi Tomita ,  Soichi Nadahara ,  Norio Kobayashi

    发明人： Hisashi Muraoka ,  Hiroshi Tomita ,  Soichi Nadahara ,  Norio Kobayashi

    IPC分类号： H01L21/304 ,  H01L21/322 ,  C03C23/00

    CPC分类号： H01L21/3221

    摘要： A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.

    摘要翻译： 提供了清洗其中含有金属杂质的半导体衬底的内部的工艺。 加热半导体衬底，其一侧或其两侧在高温下与金属或无机盐的熔体接触，使得熔体不与这些半导体反应，并且半导体不熔化。 通过该处理，存在于基板内的杂质从基板中除去，其内部被清洁。

    Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device
    9.
    发明授权
    Etching method and etching apparatus method for manufacturing semiconductor device and semiconductor device 失效
    蚀刻方法和蚀刻装置，半导体装置的制造方法以及半导体装置

    公开(公告)号：US06436723B1

    公开(公告)日：2002-08-20

    申请号：US09408177

    申请日：1999-09-29

    申请人： Hiroshi Tomita ,  Soichi Nadahara

    发明人： Hiroshi Tomita ,  Soichi Nadahara

    IPC分类号： H01L2100

    CPC分类号： H01L21/32134 ,  H01L21/67075 ,  H01L28/65

    摘要： In the etching method, ozone water containing an oxidation agent having an oxidation-reduction potential of 2V or more is supplied onto a metal compound film such as SrRuO film or the like, and the metal compound film is etched by oxidation-reduction reaction involving oxygen. The metal compound film, which is conventionally removed by a physical removal method, can be easily removed by wet etching. Manufacture of a capacitor containing an SrRuO film and the like can thus be facilitated.

    摘要翻译： 在蚀刻方法中，将含有氧化还原电位为2V以上的氧化剂的臭氧水供给到诸如SrRuO膜等的金属化合物膜上，并且通过涉及氧的氧化还原反应蚀刻金属化合物膜 。 通过物理去除方法通常去除的金属化合物膜可以通过湿蚀刻容易地除去。 因此，容易制造含有SrRuO膜的电容器等。