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113 条记录 (耗时 0.035 秒)

    Device for removing electric field of display
    1.
    发明授权
    Device for removing electric field of display 失效
    用于去除显示器电场的装置

    公开(公告)号：US5818171A

    公开(公告)日：1998-10-06

    申请号：US782638

    申请日：1997-01-14

    申请人： Young-Min Kim ,  Tae-Sung Kim

    发明人： Young-Min Kim ,  Tae-Sung Kim

    IPC分类号： G09G1/00 ,  H01J29/00 ,  H04N3/16 ,  H01J29/06

    CPC分类号： H01J29/003 ,  H01J2229/0015

    摘要： A device for removing electric field of a display according to the present invention comprises: a voltage generator connected to a horizontal deflection output circuit of a CRT and generating an antiphase reverse pulse having a frequency band equal to that of a horizontal output pulse; a reverse pulse sensor made of a conductive material, insulated at a given location in the front part of the CRT, and generating the reverse pulse around the CRT; and a connector for detecting the reverse pulse of the voltage generator, connected to ground at one end thereof and the reverse pulse sensor at the other end thereof, and sending the reverse pulse to the reverse pulse sensor.

    摘要翻译： 根据本发明的用于去除显示器的电场的装置包括：电压发生器，其连接到CRT的水平偏转输出电路，并产生具有与水平输出脉冲的频带相同的频带的反相反向脉冲; 由导电材料制成的反向脉冲传感器，在CRT的前部的给定位置处绝缘，并在CRT周围产生反向脉冲; 以及用于检测其一端连接到地的电压发生器的反向脉冲和另一端的反向脉冲传感器的连接器，并将反向脉冲发送到反向脉冲传感器。

    POLY(ORGANOPHOSPHAZENE) CONTAINING DEGRADATION CONTROLLABLE IONIC GROUP, PREPARATION METHOD THEREOF AND USE THEREOF
    6.
    发明申请
    POLY(ORGANOPHOSPHAZENE) CONTAINING DEGRADATION CONTROLLABLE IONIC GROUP, PREPARATION METHOD THEREOF AND USE THEREOF 审中-公开
    含有降解可控离子基团的聚（有机磷），其制备方法及其用途

    公开(公告)号：US20140031289A1

    公开(公告)日：2014-01-30

    申请号：US13569737

    申请日：2012-08-08

    申请人： Soo-Chang SONG ,  Young-Min Kim

    发明人： Soo-Chang SONG ,  Young-Min Kim

    IPC分类号： C08G79/02 ,  A61K47/34

    CPC分类号： C08G79/025 ,  A61K47/34

    摘要： The present invention relates to a thermosensitive phosphazene-based polymer having a degradation controllable ionic group, a use thereof, and a use thereof as a material for delivering bioactive substances. The phosphazene-based polymer according to the present invention has the thermosensitivity of showing the temperature-dependent sol-gel phase transition. Thus, it forms a gel phase at the body temperature when it is injected into the body to make it easy to control the release of bioactive substances such as drugs, and has the functional groups capable of making chemical bonds such as ionic bond, covalent bond, coordinate bond, etc. with drugs and thus is excellent in bearing the drugs. Since it can control the degradation rate depending on the kind of ionic group, it can selectively control the release time depending on the characteristics of drugs. Furthermore, it has an excellent biocompatibility and thus is very useful as a material for delivery of bioactive substances such as drugs, etc.

    摘要翻译： 本发明涉及具有降解可控离子基团的热敏磷腈基聚合物，其用途及其用作输送生物活性物质的材料的用途。 根据本发明的磷腈基聚合物具有显示温度依赖性溶胶 - 凝胶相变的热敏性。 因此，当其注入体内时，其在体温下形成凝胶相，以便容易地控制生物活性物质如药物的释放，并且具有能够进行化学键的官能团，例如离子键，共价键 ，配合药物等，因此具有优异的耐药性。 由于可以根据离子基团的种类控制降解速率，因此可根据药物的特性选择性地控制释放时间。 此外，它具有优异的生物相容性，因此作为用于递送生物活性物质如药物等的材料是非常有用的。

    Thin film transistor array panel and manufacturing method thereof
    7.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US08519393B2

    公开(公告)日：2013-08-27

    申请号：US12823043

    申请日：2010-06-24

    申请人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

    发明人： Tae-Young Choi ,  Hi-Kuk Lee ,  Bo-Sung Kim ,  Young-Min Kim ,  Seung-Hwan Cho ,  Young-Soo Yoon ,  Yeon-Taek Jeong ,  Seon-Pil Jang

    IPC分类号： H01L27/146 ,  H01L29/786

    CPC分类号： H01L29/66765 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

    摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

    摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。 半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。 源电极和漏极设置在半导体的第二部分和栅极绝缘层上。

    Display substrate, method of manufacturing the same and display panel having the same
    9.
    发明授权
    Display substrate, method of manufacturing the same and display panel having the same 有权
    显示基板，其制造方法以及具有该基板的显示面板

    公开(公告)号：US08241936B2

    公开(公告)日：2012-08-14

    申请号：US13230111

    申请日：2011-09-12

    申请人： Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

    发明人： Je-Hun Lee ,  Young-Min Kim ,  Bo-Sung Kim ,  Jun-Young Lee ,  Sung-Wook Kang

    IPC分类号： H01L20/00

    CPC分类号： H01L51/102 ,  G02F1/13439 ,  H01L27/283 ,  H01L51/0541 ,  H01L51/0545

    摘要： An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.

    摘要翻译： 提供改进的显示基板以减少有机薄膜晶体管的绝缘层上的表面缺陷。 还提供了相关的制造方法。 在一个示例中，显示基板包括基底，多条数据线，多条栅极线，由数据线和栅极线限定的像素，有机薄膜晶体管和像素电极。 数据线在基座上并且朝向第一方向。 栅极线在与第一方向交叉的第二方向上取向。 有机薄膜晶体管包括电连接到数据线之一的源电极，电连接到栅极线之一的栅电极和有机半导体层。 像素电极设置在像素中并电连接到有机薄膜晶体管。 像素电极包括透明氧氮化物。

    Liquid crystal display and method for manufacturing the same
    10.
    发明授权
    Liquid crystal display and method for manufacturing the same 有权
    液晶显示器及其制造方法

    公开(公告)号：US08168977B2

    公开(公告)日：2012-05-01

    申请号：US12622078

    申请日：2009-11-19

    申请人： Tae-Young Choi ,  Bo-Sung Kim ,  Young-Min Kim

    发明人： Tae-Young Choi ,  Bo-Sung Kim ,  Young-Min Kim

    IPC分类号： H01L29/04

    CPC分类号： H01L27/1225 ,  G02F1/136209 ,  G02F1/13624 ,  G02F2001/136222 ,  H01L27/1248 ,  H01L27/1288

    摘要： The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

    摘要翻译： 本发明提供一种在液晶显示器中具有高性能的薄膜晶体管，以及根据本发明的示例性实施例的液晶显示器的制造方法，包括：在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层，栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。