公开(公告)号：US09103884B2

公开(公告)日：2015-08-11

申请号：US12963511

申请日：2010-12-08

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Sa-Lly Liu

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Sa-Lly Liu

IPC分类号： G01R31/26 ,  G01R31/3185 ,  G11C29/56 ,  H01L21/66

CPC分类号： G01R31/2601 ,  G01R1/0491 ,  G01R31/2644 ,  G01R31/318511 ,  G11C29/56 ,  G11C2029/5602 ,  H01L22/34

摘要： A transmission line is provided. In one embodiment, the transmission line comprises a substrate, a well within the substrate, a shielding layer over the well, and a plurality of intermediate metal layers over the shielding layer, the plurality of intermediate metal layers coupled by a plurality of vias. The transmission line further includes a top metal layer over the plurality of intermediate metal layers. A test structure for de-embedding an on-wafer device, and a wafer are also disclosed.

摘要翻译： 提供传输线。 在一个实施例中，传输线包括衬底，衬底内的阱，阱上的屏蔽层以及屏蔽层上的多个中间金属层，多个中间金属层通过多个通孔耦合。 传输线还包括多个中间金属层上的顶部金属层。 还公开了用于去嵌入晶片装置和晶片的测试结构。

公开(公告)号：US20120146680A1

公开(公告)日：2012-06-14

申请号：US12963511

申请日：2010-12-08

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Sa-Lly Liu

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Sa-Lly Liu

IPC分类号： G01R31/00

CPC分类号： G01R31/2601 ,  G01R1/0491 ,  G01R31/2644 ,  G01R31/318511 ,  G11C29/56 ,  G11C2029/5602 ,  H01L22/34

摘要： A transmission line is provided. In one embodiment, the transmission line comprises a substrate, a well within the substrate, a shielding layer over the well, and a plurality of intermediate metal layers over the shielding layer, the plurality of intermediate metal layers coupled by a plurality of vias. The transmission line further includes a top metal layer over the plurality of intermediate metal layers. A test structure for de-embedding an on-wafer device, and a wafer are also disclosed.

摘要翻译： 提供传输线。 在一个实施例中，传输线包括衬底，衬底内的阱，阱上的屏蔽层以及屏蔽层上的多个中间金属层，多个中间金属层通过多个通孔耦合。 传输线还包括多个中间金属层上的顶部金属层。 还公开了用于去嵌入晶片装置和晶片的测试结构。

公开(公告)号：US09923101B2

公开(公告)日：2018-03-20

申请号：US13615503

申请日：2012-09-13

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Chewn-Pu Jou ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Chewn-Pu Jou ,  Min-Chie Jeng

IPC分类号： H01L29/94 ,  H01L29/66 ,  H01L21/66 ,  H01L27/06 ,  H01L49/02 ,  H01L23/48 ,  H01L23/58

CPC分类号： H01L29/94 ,  H01L22/34 ,  H01L23/481 ,  H01L23/585 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure is provided. The semiconductor structure includes a floating substrate; and a capacitor grounded and connected to the floating substrate. A method of manufacturing a semiconductor structure is also provided.

公开(公告)号：US20140008773A1

公开(公告)日：2014-01-09

申请号：US13541937

申请日：2012-07-05

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L25/065 ,  H01L21/50

CPC分类号： H01Q1/38 ,  H01L23/66 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01Q1/2283 ,  H01Q1/40 ,  H01Q7/00 ,  H01L2924/00

摘要： Some embodiments relate to a semiconductor module comprising an integrated antenna structure configured to wirelessly transmit signals. The integrated antenna structure has a lower metal layer and an upper metal layer. The lower metal layer is disposed on a lower die and is connected to a ground terminal. The upper metal layer is disposed on an upper die and is connected to a signal generator configured to generate a signal to be wirelessly transmitted. The upper die is stacked on the lower die and is connected to the lower die by way of an adhesion layer having one or more micro-bumps. By connecting the lower and upper die together by way of the adhesion layer, the lower and upper metal layers are separated from each other by a large spacing that provides for a good performance of the integrated antenna structure.

摘要翻译： 一些实施例涉及包括被配置为无线传输信号的集成天线结构的半导体模块。 集成天线结构具有下金属层和上金属层。 下金属层设置在下模上并连接到接地端子。 上金属层设置在上模上并连接到被配置为产生要无线传输的信号的信号发生器。 上模具堆叠在下模上，并通过具有一个或多个微凸块的粘合层连接到下模。 通过将粘合层连接在一起，下部和上部金属层彼此间隔开大间隔，从而提供了集成天线结构的良好性能。

公开(公告)号：US08552812B2

公开(公告)日：2013-10-08

申请号：US12963701

申请日：2010-12-09

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

IPC分类号： H03H5/00 ,  H01F5/00

CPC分类号： H01L23/5227 ,  H01F17/0006 ,  H01F2017/0086 ,  H01L23/5223 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： An electronic device comprises first, second and third inductors connected in series and formed in a metal layer over a semiconductor substrate. The first and second inductors have a mutual inductance with each other. The second and third inductors having a mutual inductance with each other. A first capacitor has a first electrode connected to a first node. The first node is conductively coupled between the first and second inductors. A second capacitor has a second electrode connected to a second node. The second node is conductively coupled between the second and third inductors.

公开(公告)号：US20120268229A1

公开(公告)日：2012-10-25

申请号：US13091440

申请日：2011-04-21

申请人： Hsiao-Tsung Yen ,  Huan-Neng Chen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Mei-Show Chen ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Huan-Neng Chen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Mei-Show Chen ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01F5/00 ,  H01F17/00

CPC分类号： H01F27/2804 ,  H01F17/0013 ,  H01F2017/002 ,  H01F2017/004 ,  H01F2027/2809 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a substrate, and a vertical inductor over the substrate. The vertical inductor includes a plurality of parts formed of metal, wherein each of the parts extends in one of a plurality of planes perpendicular to a major surface of the substrate. Metal lines interconnect neighboring ones of the plurality of parts of the vertical inductor.

摘要翻译： 器件包括衬底和衬底上的垂直电感器。 垂直电感器包括由金属形成的多个部件，其中每个部件在与基板的主表面垂直的多个平面中的一个平面中延伸。 金属线互连垂直电感器的多个部分中的相邻部分。

公开(公告)号：US09087838B2

公开(公告)日：2015-07-21

申请号：US13280786

申请日：2011-10-25

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L23/52 ,  H01L21/02 ,  H01L23/522 ,  H01L23/64 ,  H01L49/02

CPC分类号： H01L23/5222 ,  H01F17/0013 ,  H01L21/76805 ,  H01L21/76877 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/552 ,  H01L23/642 ,  H01L23/645 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.

摘要翻译： 本发明提供一种半导体器件。 半导体器件包括具有集成电路（IC）器件的半导体衬底; 布置在半导体衬底上并与IC器件耦合的互连结构; 以及设置在半导体衬底上并集成在互连结构中的变压器。 变压器包括第一导电特征; 与所述第一导电特征电感耦合的第二导电特征; 电连接到第一导电特征的第三导电特征; 以及电连接到第二导电特征的第四导电特征。 第三和第四导电特征被设计和配置为电容耦合以增加变压器的耦合系数。

公开(公告)号：US20130277794A1

公开(公告)日：2013-10-24

申请号：US13841577

申请日：2013-03-15

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Cheng-Hung Lee ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Cheng-Hung Lee ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L23/60

CPC分类号： H01L23/60 ,  H01L23/66 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L27/0248 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/17517 ,  H01L2224/81455 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A device includes a die including a main circuit and a first pad coupled to the main circuit. A work piece including a second pad is bonded to the die. A first plurality of micro-bumps is electrically coupled in series between the first and the second pads. Each of the plurality of micro-bumps includes a first end joining the die and a second end joining the work piece. A micro-bump is bonded to the die and the work piece. The second pad is electrically coupled to the micro-bump.

摘要翻译： 一种器件包括：裸片，包括主电路和耦合到主电路的第一焊盘。 包括第二垫的工件被结合到模具。 第一多个微凸块在第一和第二焊盘之间串联电耦合。 多个微型凸块中的每一个包括连接模具的第一端和连接工件的第二端。 微凸块与模具和工件结合。 第二焊盘电耦合到微凸起。

公开(公告)号：US20120153433A1

公开(公告)日：2012-06-21

申请号：US12974896

申请日：2010-12-21

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Cheng Hung Lee ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Cheng Hung Lee ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L23/552 ,  H01L23/00

CPC分类号： H01L23/60 ,  H01L23/66 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L27/0248 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/17517 ,  H01L2224/81455 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A device includes a die including a main circuit and a first pad coupled to the main circuit. A work piece including a second pad is bonded to the die. A first plurality of micro-bumps is electrically coupled in series between the first and the second pads. Each of the plurality of micro-bumps includes a first end joining the die and a second end joining the work piece. A micro-bump is bonded to the die and the work piece. The second pad is electrically coupled to the micro-bump.

摘要翻译： 一种器件包括：裸片，包括主电路和耦合到主电路的第一焊盘。 包括第二垫的工件被结合到模具。 第一多个微凸块在第一和第二焊盘之间串联电耦合。 多个微型凸块中的每一个包括连接模具的第一端和连接工件的第二端。 微凸块与模具和工件结合。 第二焊盘电耦合到微凸起。

公开(公告)号：US20120104575A1

公开(公告)日：2012-05-03

申请号：US12917285

申请日：2010-11-01

申请人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chin-Wei Kuo ,  Chewn-Pu Jou

发明人： Yu-Ling Lin ,  Hsiao-Tsung Yen ,  Ho-Hsiang Chen ,  Chin-Wei Kuo ,  Chewn-Pu Jou

IPC分类号： H01L23/14

CPC分类号： H01L23/5225 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/64 ,  H01L23/66 ,  H01L27/0629 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/00

摘要： A strip-line includes a ground plane extending through a plurality of dielectric layers over a substrate; a signal line over the substrate and on a side of the ground plane; a first plurality of metal strips under the signal line and in a first metal layer, wherein the first plurality of metal strips is parallel to each other, and is spaced apart from each other by spaces; and a second plurality of metal strips under the signal line and in a second metal layer over the first metal layer. The second plurality of metal strips vertically overlaps the spaces. The first plurality of metal strips is electrically coupled to the second plurality of metal strips through the ground plane, and no via physically contacts the first plurality of metal strips and the second plurality of metal strips.

摘要翻译： 带状线包括在衬底上延伸穿过多个电介质层的接地平面; 在基板上并在接地平面的一侧的信号线; 在信号线下方和第一金属层中的第一多个金属条，其中所述第一多个金属条彼此平行并且彼此间隔开; 以及信号线下方的第二多个金属条，并且在第一金属层上方的第二金属层中。 第二多个金属带垂直地与空间重叠。 第一多个金属条通过接地平面电耦合到第二多个金属条，并且不通过物理地接触第一多个金属条和第二多个金属条。