公开(公告)号：US20080081395A1

公开(公告)日：2008-04-03

申请号：US11984014

申请日：2007-11-13

申请人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

发明人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

IPC分类号： H01L31/18

CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.

公开(公告)号：US07317235B2

公开(公告)日：2008-01-08

申请号：US11082899

申请日：2005-03-18

申请人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

发明人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

IPC分类号： H01L31/0203

CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.

摘要翻译： 公开了一种光电子器件的晶片级封装结构及其制造方法。 光电子器件的晶片级封装结构通过采用其表面具有多个光敏区域并分成单个封装器件的衬底来提供。 制造步骤首先涉及提供具有表面具有光敏区域和接合焊盘的几个芯片的基板，并且提供其表面具有导电电路和划线的透明层。 然后，接合焊盘接合到导电电路，并且在芯片上形成保护层以暴露部分导电电路。 在保护层上形成导电膜，并且导电膜与延伸的导电电路接触以形成光电子器件的晶片级封装结构。 最后，根据划线对透明层进行切割，形成单独的封装装置。

公开(公告)号：US07465603B2

公开(公告)日：2008-12-16

申请号：US11984014

申请日：2007-11-13

申请人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

发明人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

IPC分类号： H01L21/00

CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.

公开(公告)号：US20060030079A1

公开(公告)日：2006-02-09

申请号：US11082899

申请日：2005-03-18

申请人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

发明人： Yuan-Chang Huang ,  Tai-Hung Chen ,  Yao-Sheng Lin ,  Su-Tsai Lu

IPC分类号： H01L21/44

CPC分类号： H01L27/14683 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.

摘要翻译： 公开了一种光电子器件的晶片级封装结构及其制造方法。 光电子器件的晶片级封装结构通过采用其表面具有多个光敏区域并分成单个封装器件的衬底来提供。 制造步骤首先涉及提供具有表面具有光敏区域和接合焊盘的几个芯片的基板，并且提供其表面具有导电电路和划线的透明层。 然后，接合焊盘接合到导电电路，并且在芯片上形成保护层以暴露部分导电电路。 在保护层上形成导电膜，并且导电膜与延伸的导电电路接触以形成光电子器件的晶片级封装结构。 最后，根据划线对透明层进行切割，形成单独的封装装置。

公开(公告)号：US07183494B2

公开(公告)日：2007-02-27

申请号：US10829060

申请日：2004-04-20

申请人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

发明人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC分类号： H05K1/02

CPC分类号： B32B15/08 ,  B32B7/12 ,  B32B9/005 ,  B32B15/20 ,  B32B27/281 ,  B32B27/283 ,  B32B2457/08 ,  B32B2457/14 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/8123 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  Y10T428/24917 ,  Y10T428/31667 ,  H01L2924/00014 ,  H01L2924/00

摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

摘要翻译： 提供具有缓冲层的接合结构及其形成方法。 接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属 覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。 第一金属层，电极和接合层被接合以形成接合结构。 可以通过表面活化或热压直接粘合。 该方法使用较少的步骤并且更可靠。 粘结结构所需的温度较低。 接触表面之间的结合密度增加到细间距。 增加接合点的质量，因为产生了接触表面之间的较少的污染物。

公开(公告)号：US20070056163A1

公开(公告)日：2007-03-15

申请号：US11549655

申请日：2006-10-16

申请人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

发明人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC分类号： H05K3/36

CPC分类号： H01L24/13 ,  H01L21/56 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/29036 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10T29/49126 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/00012

摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

公开(公告)号：US20050112340A1

公开(公告)日：2005-05-26

申请号：US10829060

申请日：2004-04-20

申请人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

发明人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC分类号： B32B3/00 ,  H01L21/60 ,  H01L21/603

CPC分类号： B32B15/08 ,  B32B7/12 ,  B32B9/005 ,  B32B15/20 ,  B32B27/281 ,  B32B27/283 ,  B32B2457/08 ,  B32B2457/14 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/8123 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  Y10T428/24917 ,  Y10T428/31667 ,  H01L2924/00014 ,  H01L2924/00

摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

摘要翻译： 提供具有缓冲层的接合结构及其形成方法。 接合结构包括其上具有金属垫的第一衬底，覆盖在衬底的表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属 覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。 第一金属层，电极和接合层被接合以形成接合结构。 可以通过表面活化或热压直接粘合。 该方法使用较少的步骤并且更可靠。 粘结结构所需的温度较低。 接触表面之间的结合密度增加到细间距。 增加接合点的质量，因为产生了接触表面之间的较少的污染物。

公开(公告)号：US07988808B2

公开(公告)日：2011-08-02

申请号：US12194529

申请日：2008-08-19

申请人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

发明人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC分类号： B29C65/00 ,  B32B37/00 ,  B32B38/00 ,  B32B7/14 ,  H01L21/44

CPC分类号： H01L24/13 ,  H01L21/56 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/29036 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10T29/49126 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/00012

摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

摘要翻译： 提供具有缓冲层的接合结构及其形成方法。 接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属 覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。 第一金属层，电极和接合层被接合以形成接合结构。 可以通过表面活化或热压直接粘合。 该方法使用较少的步骤并且更可靠。 粘结结构所需的温度较低。 接触表面之间的结合密度增加到细间距。 增加接合点的质量，因为产生了接触表面之间的较少的污染物。

公开(公告)号：US20080305624A1

公开(公告)日：2008-12-11

申请号：US12194529

申请日：2008-08-19

申请人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

发明人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L21/56 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/29036 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10T29/49126 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/00012

摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

摘要翻译： 提供具有缓冲层的接合结构及其形成方法。 接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属 覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。 第一金属层，电极和接合层被接合以形成接合结构。 可以通过表面活化或热压直接粘合。 该方法使用较少的步骤并且更可靠。 粘结结构所需的温度较低。 接触表面之间的结合密度增加到细间距。 增加接合点的质量，因为产生了接触表面之间的较少的污染物。

公开(公告)号：US20070122635A1

公开(公告)日：2007-05-31

申请号：US11619612

申请日：2007-01-04

申请人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

发明人： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC分类号： B32B13/04

CPC分类号： B32B15/08 ,  B32B7/12 ,  B32B9/005 ,  B32B15/20 ,  B32B27/281 ,  B32B27/283 ,  B32B2457/08 ,  B32B2457/14 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/8123 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  Y10T428/24917 ,  Y10T428/31667 ,  H01L2924/00014 ,  H01L2924/00

摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

摘要翻译： 提供具有缓冲层的接合结构及其形成方法。 接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属 覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。 第一金属层，电极和接合层被接合以形成接合结构。 可以通过表面活化或热压直接粘合。 该方法使用较少的步骤并且更可靠。 粘结结构所需的温度较低。 接触表面之间的结合密度增加到细间距。 增加接合点的质量，因为产生了接触表面之间的较少的污染物。