利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

114 条记录 (耗时 0.09 秒)

    ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM
    1.
    发明申请
    ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM 审中-公开
    电极厚膜组合物（S），电极（S）及其形成的半导体器件（S）

    公开(公告)号：US20090140217A1

    公开(公告)日：2009-06-04

    申请号：US12366250

    申请日：2009-02-05

    申请人： Yueli YLW Wang ,  Kenneth Warren Hang

    发明人： Yueli YLW Wang ,  Kenneth Warren Hang

    IPC分类号： H01B1/22

    CPC分类号： C03C3/064 ,  C03C3/066 ,  C03C8/04 ,  C03C8/18 ,  C03C14/006 ,  C03C2214/08 ,  C03C2214/16 ,  H01B1/22 ,  H01L31/022425 ,  H01L2924/0002 ,  H05K1/092 ,  Y02E10/542 ,  H01L2924/00

    摘要： The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.

    摘要翻译： 本发明涉及一种导电厚膜组合物，其包含：（a）选自（1）Al，Cu，Au，Ag，Pd和Pt中的导电金属颗粒; （2）Al，Cu，Au，Ag，Pd和Pt的合金; 和（3）它们的混合物; （3）玻璃料，其中所述玻璃料是无铅的; 分散在（d）有机介质中，并且其中所述导电金属颗粒的平均直径在0.5-10.0μm的范围内。 本发明还涉及由上述组合物形成的电极和包括所述电极的半导体器件（例如，太阳能电池）。

    Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices
    2.
    发明授权
    Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices 失效
    含铅 - 碲 - 锂 - 氧化钛的厚膜糊剂及其在制造半导体器件中的应用

    公开(公告)号：US08691119B2

    公开(公告)日：2014-04-08

    申请号：US13556645

    申请日：2012-07-24

    申请人： Kenneth Warren Hang ,  Yueli Wang

    发明人： Kenneth Warren Hang ,  Yueli Wang

    IPC分类号： H01B1/22 ,  H01L31/0224 ,  H01L35/14

    CPC分类号： H01B1/22

    摘要： The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a lead-tellurium-lithium-titanium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.

    摘要翻译： 本发明涉及一种导电厚膜糊剂组合物，其包含导电Ag，选自Ni，Al及其混合物的第二导电金属和全部分散在有机物中的铅 - 碲 - 锂 - 氧化钛 中。 本发明还涉及由厚膜糊剂组合物和半导体器件形成的电极，特别是包括这种电极的太阳能电池。

    CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
    10.
    发明申请
    CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES 失效
    用于制造半导体器件的导电组合物和工艺

    公开(公告)号：US20110203659A1

    公开(公告)日：2011-08-25

    申请号：US13098855

    申请日：2011-05-02

    申请人： Alan Frederick Carroll ,  Kenneth Warren Hang

    发明人： Alan Frederick Carroll ,  Kenneth Warren Hang

    IPC分类号： H01L31/0224 ,  H01B1/22 ,  H01L21/283 ,  H01L29/45

    CPC分类号： H01L31/022408 ,  C03C8/02 ,  C03C8/04 ,  C03C8/06 ,  C03C8/18 ,  H01B1/22 ,  H01L31/022425 ,  H05K1/092 ,  Y02E10/50

    摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said composition has been fired to remove the organic vehicle and sinter said glass particles. Still further, the invention is directed to a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition detailed above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode. Additionally, the present invention is directed to a semiconductor device formed by the method detailed above and a semiconductor device formed from the thick film conductive composition detailed above.

    摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含锌添加剂; （c）玻璃料，其中所述玻璃料是无铅的; 分散在（d）有机介质中。 本发明还涉及由上述组合物形成的电极，其中所述组合物已被烧制以除去有机载体并烧结所述玻璃颗粒。 另外，本发明涉及从由半导体构成的结构元件制造半导体器件的方法，所述结构元件由在半导体的主表面上形成的pn结和绝缘膜构成，包括以下步骤：（a）施加到所述绝缘 上面详细介绍了薄膜组成; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。 另外，本发明涉及通过上述方法形成的半导体器件以及由上述详细描述的厚膜导电组合物形成的半导体器件。