摘要:
A pulsewidth modulation circuit uses a plurality of programmable paths to connect its output line to ground connections. The paths have different numbers of serially-connected NFETs to provide different pulldown rates. A desired programmable paths is selected based on encoded control signals, with decode logic integrated into the programmable paths. The decode logic includes, for each path, at least two transistors controlled by one of the encoded signals or their complements. A default path to ground may also be provided for use when none of the programmable paths is selected. For example, two encoded signals may be used to select 1-in-4 among the default path and three programmable paths. Integration of the decode logic into the programmable paths results in smaller overall circuit area, leading to reduced power usage, while still retaining the orthogonal benefit of encoded control signals.
摘要:
A pulsewidth modulation circuit uses a plurality of programmable paths to connect its output line to ground connections. The paths have different numbers of serially-connected NFETs to provide different pulldown rates. A desired programmable paths is selected based on encoded control signals, with decode logic integrated into the programmable paths. The decode logic includes, for each path, at least two transistors controlled by one of the encoded signals or their complements. A default path to ground may also be provided for use when none of the programmable paths is selected. For example, two encoded signals may be used to select 1-in-4 among the default path and three programmable paths. Integration of the decode logic into the programmable paths results in smaller overall circuit area, leading to reduced power usage, while still retaining the orthogonal benefit of encoded control signals.
摘要:
A multi-port (e.g., two port) CMOS static random access memory (SRAM) with a local clock driver generating clocks for boundary latches. Local clocks select between address inputs clocked into the boundary latches. A read clock selects and latches a read address in the boundary latches. A second clock latches write addresses and, when appropriate, test data addresses.
摘要:
A programmable Local Clock Buffer has a single inverter between the clock input and the delayed clock output. A transistor switch modulates the single inverter stage between a clock signal transmit state and a non-transmitting state. A combination of delay select bits control the timing of the beginning and ending of the transmit state of the inverter relative to the clock input via the transistor switch.
摘要:
A programmable Local Clock Buffer has a single inverter between the clock input and the delayed clock output. A transistor switch modulates the single inverter stage between a clock signal transmit state and a non-transmitting state. A combination of delay select bits control the timing of the beginning and ending of the transmit state of the inverter relative to the clock input via the transistor switch.
摘要:
A Tri-State circuit element (100) composed of Complementary Metal Oxide Semiconductor (CMOS)—devices is described. Said Tri-State circuit element (100) having a data signal input terminal (102) for receiving a data signal, an enable signal input terminal (104) for receiving an enable signal, and an output signal terminal (106) for providing an output signal. Furthermore a Tri-State-Multiplexer circuitry (300) composed of such Tri-State circuit elements (100) is described.
摘要:
A method and system of accessing memory cells within a dynamic hardware memory block operated with a bitline precharge circuit, in which differential read/write access operations are performed by activating complementary bitlines. A reduction in power dissipation is realized by determining whether a next access operation following a current access operation is a read or write access, and performing a precharge of the bitlines of the array only when a read operation follows the current access operation. A conventional precharge control signal is combined with an external control signal indicating if the next cycle is a read cycle. The combination of the two signals can be used, for example, as input to a simple AND gate to generate an effective precharge signal. The effective precharge signal permits precharging of bitlines only when those bitlines are used for read access in a respective next cycle.
摘要:
A memory array is provided that comprises a plurality of global bit lines such that each bit line is coupled to a plurality of memory cells. The memory array further comprises a plurality of precharge logic such that each precharge logic is coupled to an associated global bit line in the plurality of global bit lines. Identification logic in the memory array is coupled to the plurality of precharge logic. The identification logic provides a precharge enable signal to a subset of the plurality of precharge logic on each clock cycle such that the subset of precharge logic precharges its associated subset of global bit lines to a voltage level of a voltage source, thereby reducing the power consumption of the memory array.
摘要:
A memory array is provided that comprises a plurality of global bit lines such that each bit line is coupled to a plurality of memory cells. The memory array further comprises a plurality of precharge logic such that each precharge logic is coupled to an associated global bit line in the plurality of global bit lines. Identification logic in the memory array is coupled to the plurality of precharge logic. The identification logic provides a precharge enable signal to a subset of the plurality of precharge logic on each clock cycle such that the subset of precharge logic precharges its associated subset of global bit lines to a voltage level of a voltage source, thereby reducing the power consumption of the memory array.