利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

23 条记录 (耗时 0.016 秒)

    Trap apparatus
    1.
    发明授权
    Trap apparatus 失效
    陷阱装置

    公开(公告)号：US06488774B1

    公开(公告)日：2002-12-03

    申请号：US09512333

    申请日：2000-02-24

    申请人： Kuniaki Horie ,  Masahito Abe ,  Tsutomu Nakada ,  Yuji Araki

    发明人： Kuniaki Horie ,  Masahito Abe ,  Tsutomu Nakada ,  Yuji Araki

    IPC分类号： C23C1600

    CPC分类号： C23C16/4412 ,  B01D5/0027 ,  B01D8/00 ,  Y02C20/30

    摘要： A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as barium/strontium titanates on substrates. The trap apparatus is disposed downstream of a vacuum process chamber. The vacuum process chamber is for processing a substrate. The trap apparatus is for trapping a component having a low vapor pressure contained in a gas discharged from the vacuum process chamber. The trap apparatus includes a trap container for introducing the gas discharged from the vacuum process chamber, and a cooling device provided in the trap container for cooling the gas to a temperature equal to or lower than a condensing temperature of a gas component which is contained in the gas and easily liquidized.

    摘要翻译： 捕集装置最适于捕获从气相沉积装置排出的材料气体，用于沉积在基底上的高电介质或铁电体如钡/锶钛酸盐的气相薄膜中。 捕集装置设置在真空处理室的下游。 真空处理室用于处理基板。 捕集装置用于捕获从真空处理室排出的气体中所含的具有低蒸气压的部件。 捕集装置包括用于引入从真空处理室排出的气体的捕集容器和设置在捕集容器中的冷却装置，用于将气体冷却至等于或低于气体成分的冷凝温度的温度 气体容易液化。

    High energy sputtering method for forming interconnects
    2.
    发明授权
    High energy sputtering method for forming interconnects 失效
    用于形成互连的高能溅射方法

    公开(公告)号：US06458694B2

    公开(公告)日：2002-10-01

    申请号：US09767145

    申请日：2001-01-23

    申请人： Naoaki Ogure ,  Takao Kato ,  Kuniaki Horie ,  Yuji Araki

    发明人： Naoaki Ogure ,  Takao Kato ,  Kuniaki Horie ,  Yuji Araki

    IPC分类号： H01L21443

    CPC分类号： H01L21/76873 ,  C23C14/046 ,  C23C14/35 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76877

    摘要： The present invention relates to a method and apparatus for forming interconnects on a substrate such as a semiconductor wafer by filling a conductive material such as copper (Cu) in fine recesses formed in a surface of the substrate. A method for forming interconnects comprises providing a substrate and a target composed of a conductive material in confrontation with each other in a chamber, introducing a sputtering gas into the chamber while a high voltage is applied between the substrate and the target to cause the sputtering gas to collide with the target, and depositing particles of the conductive material emitted from the target on the surface of the substrate to form a thin film, while sputter-etching the thin film by reflection sputtering gas molecules reflected from the target and having high energy.

    摘要翻译： 本发明涉及一种在诸如半导体晶片的衬底上形成互连的方法和装置，该方法和装置通过在衬底的表面中形成的精细凹槽中填充诸如铜（Cu）的导电材料。 一种用于形成互连的方法包括在室内相互对置地提供由导电材料构成的基板和靶，将溅射气体引入室中，同时在基板和靶之间施加高电压以引起溅射气体 与目标物碰撞，在基板的表面上沉积从靶发射的导电材料的粒子，形成薄膜，同时通过反射溅射气体分子溅射蚀刻薄膜，反射溅射气体分子并且具有高能量。

    Valving device
    6.
    发明授权
    Valving device 失效
    阀门装置

    公开(公告)号：US6116267A

    公开(公告)日：2000-09-12

    申请号：US172146

    申请日：1998-10-14

    申请人： Hidenao Suzuki ,  Kuniaki Horie ,  Kiwamu Tsukamoto ,  Yuji Araki

    发明人： Hidenao Suzuki ,  Kuniaki Horie ,  Kiwamu Tsukamoto ,  Yuji Araki

    IPC分类号： F16K7/17 ,  F16K41/10 ,  F16K41/12 ,  F16K49/00

    CPC分类号： F16K41/12 ,  F16K41/10 ,  F16K49/005 ,  Y10T137/6579

    摘要： A valving device can operate stably to provide switching or flow rate control operations, even when it is used for controlling thermodynamically unstable gases. The valving device including a valve casing having an internal passage for process fluids. A valve body is movable against a valve seat for adjusting opening of the internal passage, and a valve driving mechanism can drive the valve body. A flexible member is provided for separating a fluid handling space including the internal passage from a valve mechanism space for housing the valve driving mechanism. A thermal medium space is formed within the valve mechanism space for receiving a thermal medium for providing heat to the valve body.

    摘要翻译： 即使用于控制热力学不稳定的气体，阀门装置也可以稳定运行，以提供切换或流量控制操作。 阀装置包括具有用于处理流体的内部通道的阀壳体。 阀体可以抵靠阀座移动，用于调节内部通道的开口，阀驱动机构可以驱动阀体。 提供了一种柔性构件，用于将包括内部通道的流体处理空间与用于容纳阀驱动机构的阀机构空间分离。 在阀机构空间内形成有热介质空间，用于接收用于向阀体提供热量的热介质。

    Vapor-phase film growth apparatus and gas ejection head
    9.
    发明授权
    Vapor-phase film growth apparatus and gas ejection head 失效
    气相膜生长装置和气体喷射头

    公开(公告)号：US6132512A

    公开(公告)日：2000-10-17

    申请号：US3948

    申请日：1998-01-08

    申请人： Kuniaki Horie ,  Tsutomu Nakada ,  Takeshi Murakami ,  Hidenao Suzuki ,  Masahito Abe ,  Yuji Araki

    发明人： Kuniaki Horie ,  Tsutomu Nakada ,  Takeshi Murakami ,  Hidenao Suzuki ,  Masahito Abe ,  Yuji Araki

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C23C16/00

    CPC分类号： C23C16/45574 ,  C23C16/45565 ,  C30B25/14

    摘要： A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.

    摘要翻译： 气相膜生长装置包括用于保持基板的基板保持器，气体喷射头和辐射热屏蔽装置。 衬底保持器在其中具有衬底加热器，并且气体喷射头具有用于将材料气体朝向由衬底保持器保持的衬底喷射的气体注入表面。 辐射热屏蔽装置以与气体喷射嘴的气体注入表面相对的关系设置在衬底保持器和气体注入头之间。 基本上平面的辐射热屏蔽装置可透气并具有加热能力。