公开(公告)号：US06921722B2

公开(公告)日：2005-07-26

申请号：US09866843

申请日：2001-05-30

申请人： Naoaki Ogure ,  Kuniaki Horie ,  Yuji Araki ,  Hiroshi Nagasaka ,  Momoko Kakutani ,  Tohru Satake

发明人： Naoaki Ogure ,  Kuniaki Horie ,  Yuji Araki ,  Hiroshi Nagasaka ,  Momoko Kakutani ,  Tohru Satake

IPC分类号： C23C16/18 ,  C23C16/452 ,  C23C16/48 ,  H01J37/32 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01J37/32422 ,  C23C16/18 ,  C23C16/452 ,  C23C16/486 ,  C23C16/487 ,  H01J37/3233 ,  H01L21/28556 ,  H01L21/32136

摘要： There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.

摘要翻译： 提供了在基板的表面上进行表面处理如涂层，变性，改性和蚀刻的方法。 该方法包括以下步骤：使表面处理气体与基板的表面接触，并用快速粒子束照射基板的表面，以增强表面和/或表面处理气体的活性，由此有助于 表面和气体之间的反应。 快速粒子束可以选自电子束，带电粒子束，原子束和分子束。 例如，在涂布操作期间，将气体的预定组分元素化学沉积到表面上，并且用颗粒束照射基板的表面的预定部分，以在预定部分上形成涂层。

公开(公告)号：US06432257B1

公开(公告)日：2002-08-13

申请号：US09018909

申请日：1998-02-05

申请人： Hiroshi Nagasaka ,  Momoko Kakutani ,  Kunio Tateishi ,  Naoaki Ogure ,  Takashi Yoda

发明人： Hiroshi Nagasaka ,  Momoko Kakutani ,  Kunio Tateishi ,  Naoaki Ogure ,  Takashi Yoda

IPC分类号： B24B500

CPC分类号： B24B53/017 ,  B24B37/04 ,  B24B53/12 ,  B24D18/00

摘要： A improved dresser for dressing a polishing surface, easily be manufactured such that an object to be polished is not scratched when the object is polished. The dresser can dress the polishing surface of a polishing apparatus to effect surface correction and to correct a time-lapse change due to a polishing operation, a number of spired projections are formed on a surface of a metallic substrate and a wear-resistant hard film is formed on at least a portion of the surface of the metallic substrate on which the projections are formed.

摘要翻译： 可以容易地制造用于修整抛光表面的改进的修整器，使得抛光对象在被抛光时不被划伤。 梳妆台可以打磨抛光装置的抛光表面以进行表面校正并且校正由于抛光操作引起的延时变化，在金属基底和耐磨硬膜的表面上形成多个喷射突起 形成在其上形成有突起的金属基板的表面的至少一部分上。

公开(公告)号：US06458694B2

公开(公告)日：2002-10-01

申请号：US09767145

申请日：2001-01-23

申请人： Naoaki Ogure ,  Takao Kato ,  Kuniaki Horie ,  Yuji Araki

发明人： Naoaki Ogure ,  Takao Kato ,  Kuniaki Horie ,  Yuji Araki

IPC分类号： H01L21443

CPC分类号： H01L21/76873 ,  C23C14/046 ,  C23C14/35 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76877

摘要： The present invention relates to a method and apparatus for forming interconnects on a substrate such as a semiconductor wafer by filling a conductive material such as copper (Cu) in fine recesses formed in a surface of the substrate. A method for forming interconnects comprises providing a substrate and a target composed of a conductive material in confrontation with each other in a chamber, introducing a sputtering gas into the chamber while a high voltage is applied between the substrate and the target to cause the sputtering gas to collide with the target, and depositing particles of the conductive material emitted from the target on the surface of the substrate to form a thin film, while sputter-etching the thin film by reflection sputtering gas molecules reflected from the target and having high energy.

摘要翻译： 本发明涉及一种在诸如半导体晶片的衬底上形成互连的方法和装置，该方法和装置通过在衬底的表面中形成的精细凹槽中填充诸如铜（Cu）的导电材料。 一种用于形成互连的方法包括在室内相互对置地提供由导电材料构成的基板和靶，将溅射气体引入室中，同时在基板和靶之间施加高电压以引起溅射气体 与目标物碰撞，在基板的表面上沉积从靶发射的导电材料的粒子，形成薄膜，同时通过反射溅射气体分子溅射蚀刻薄膜，反射溅射气体分子并且具有高能量。

公开(公告)号：US06387182B1

公开(公告)日：2002-05-14

申请号：US09517699

申请日：2000-03-02

申请人： Kuniaki Horie ,  Yukio Fukunaga ,  Naoaki Ogure ,  Tsutomu Nakada ,  Masahito Abe ,  Mitsunao Shibasaki ,  Hidenao Suzuki ,  Yuji Araki ,  Kiwamu Tsukamoto

发明人： Kuniaki Horie ,  Yukio Fukunaga ,  Naoaki Ogure ,  Tsutomu Nakada ,  Masahito Abe ,  Mitsunao Shibasaki ,  Hidenao Suzuki ,  Yuji Araki ,  Kiwamu Tsukamoto

IPC分类号： B05C2100

CPC分类号： C23C16/45574 ,  C23C16/409 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/4557

摘要： A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a substrate to be processed. The gas ejection head has at least two gas passageways for individually introducing the two gases, and at least two temperature control devices for individually controlling temperatures of the gases flowing through the gas passageways.

摘要翻译： 基板处理装置在基板上形成诸如钡/锶钛酸盐或铜箔的高电介质或铁电薄膜，并且具有气体喷射头，用于分别引入包括材料气体的至少两种气体并喷射 朝向待处理基板的气体。 气体喷射头具有用于分别引入两种气体的至少两个气体通道和用于单独控制流过气体通道的气体的温度的至少两个温度控制装置。

公开(公告)号：US06730596B1

公开(公告)日：2004-05-04

申请号：US09868140

申请日：2001-06-15

申请人： Akira Fukunaga ,  Kuniaki Horie ,  Naoaki Ogure ,  Takao Kato ,  Akihisa Hongo ,  Hiroshi Nagasawa

发明人： Akira Fukunaga ,  Kuniaki Horie ,  Naoaki Ogure ,  Takao Kato ,  Akihisa Hongo ,  Hiroshi Nagasawa

IPC分类号： H01L214763

CPC分类号： H05K3/4061 ,  B05C11/08 ,  C23C18/02 ,  C23C18/08 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/045 ,  H05K3/102 ,  H05K2201/0257 ,  H01L2924/00

摘要： The present invention relates particularly to a method of and an apparatus for forming a fine interconnection in a highly integrated circuit formed on a semiconductor substrate. The method has the steps of preparing a substrate having fine recesses formed in a surface thereof, dispersing ultrafine particles made at least partly of a metal in a predetermined solvent, producing an ultrafine particle dispersed liquid, supplying the ultrafine particle dispersed liquid to the fine recesses of the substrate, heating the substrate to melt and bond the metal, and chemical mechanical polishing the surface of the substrate to remove an excessively attached metal therefrom. According to the present invention, it is possible to stably deposit an interconnection metal of good quality using an inexpensive material.

摘要翻译： 本发明尤其涉及形成在半导体衬底上的高度集成电路中形成精细互连的方法和装置。 该方法具有如下步骤：制备在其表面形成有微细凹槽的基材，将至少部分由金属制成的超微粒子分散在预定溶剂中，制备超细颗粒分散液体，将超细颗粒分散液体供应到细小凹槽 加热衬底以熔融和粘合金属，并化学机械抛光衬底的表面以从中除去过量附着的金属。 根据本发明，可以使用便宜的材料稳定地沉积质量好的互连金属。

公开(公告)号：US06972256B2

公开(公告)日：2005-12-06

申请号：US09890330

申请日：2000-11-29

申请人： Akira Fukunaga ,  Kuniaki Horie ,  Naoaki Ogure ,  Takao Kato ,  Hiroshi Nagasawa ,  Shinji Kajita ,  Makoto Kubota

发明人： Akira Fukunaga ,  Kuniaki Horie ,  Naoaki Ogure ,  Takao Kato ,  Hiroshi Nagasawa ,  Shinji Kajita ,  Makoto Kubota

IPC分类号： C23C18/14 ,  H01L21/288 ,  H01L21/768 ,  H05K3/10 ,  H01L21/44

CPC分类号： H05K3/105 ,  C23C18/14 ,  H01L21/288 ,  H01L21/76885

摘要： The present invention relates to a method of and an apparatus for forming a thin metal film of copper, silver, or the like on a surface of a semiconductor or another substrate. A method of forming a thin metal film, comprises preparing a dispersed liquid having a metal-containing organic compound dispersed in a predetermined solvent, coating the dispersed liquid on a surface of a substrate and evaporating the solvent to form a coating layer, and applying an energy beam to the coating layer to decompose away an organic substance contained in the coating layer in an area irradiated with the energy beam and bond metal contained in the coating layer.According to the present invention, it is possible to form a thin metal film of good quality efficiently and stably. The thin metal film used as metal interconnects in highly integrated semiconductor circuits contributes to the progress of a process of fabricating semiconductor devices.

摘要翻译： 本发明涉及在半导体或其他基板的表面上形成铜，银等薄金属膜的方法和装置。 一种形成薄金属膜的方法包括制备分散在预定溶剂中的含金属有机化合物的分散液体，将分散的液体涂布在基材表面上并蒸发溶剂以形成涂层， 能量束到涂层，以分解被包含在涂层中的能量束和接合金属的区域中的包覆层中的有机物质。根据本发明，可以形成薄膜金属膜 高质量，高稳定地品质。 在高度集成的半导体电路中用作金属互连的金属薄膜有助于制造半导体器件的工艺的进展。

公开(公告)号：US5862605A

公开(公告)日：1999-01-26

申请号：US862155

申请日：1997-05-22

申请人： Kuniaki Horie ,  Naoaki Ogure ,  Yukio Fukunaga ,  Akihisa Hongo

发明人： Kuniaki Horie ,  Naoaki Ogure ,  Yukio Fukunaga ,  Akihisa Hongo

IPC分类号： B01D1/00 ,  C23C16/448 ,  F26B19/00

CPC分类号： B01D1/00 ,  C23C16/4481

摘要： Heat can be supplied effectively to a porous member of a vaporizer apparatus so that a vaporizing operation can be carried out smoothly and efficiently. The vaporizer apparatus includes a vaporizer section having a porous member including a liquid receiving surface and a vapor discharge surface. A feed supply section supplies a liquid feed material to the liquid receiving surface of the porous member. A heating medium passage is in thermal contact with the porous member. A heating medium supply system flows a heating medium of a temperature higher than a vaporization temperature of the liquid feed material through the heating medium passage.

摘要翻译： 可以有效地将热量提供给蒸发器装置的多孔构件，从而可以平稳有效地进行蒸发操作。 蒸发器装置包括具有包括液体接收表面和蒸汽排放表面的多孔构件的蒸发器部分。 供给部供给液体供给材料到多孔构件的液体接收表面。 加热介质通道与多孔构件热接触。 加热介质供应系统通过加热介质通道流动高于液体进料的蒸发温度的加热介质。

公开(公告)号：US20080271911A1

公开(公告)日：2008-11-06

申请号：US10567151

申请日：2004-08-04

申请人： Naoaki Ogure ,  Manabu Tsujimura

发明人： Naoaki Ogure ,  Manabu Tsujimura

IPC分类号： H01R11/00 ,  H05K1/00

CPC分类号： C02F1/46109 ,  C02F1/46114 ,  C02F2001/46138 ,  C02F2001/46152 ,  C02F2101/308 ,  C02F2103/34 ,  Y10T29/49117

摘要： [Problems] To provide an electrode that is stable in liquid and is capable of processing a large volume of liquid and a small electrode that is capable of processing a large volume of liquid at high speed; provide a liquid processor and method of processing liquid in which the electrode is used; provide and electrode material being hard to be damaged by thermal stress; and provide an electrode, liquid processor and method of processing liquid in which the electrode material is used.[Means for solving problems] An electrode of configuration resulting from coating solid pieces of 5 to 60 mm size with electrically conductive diamond, supporting them on supports and bringing the same into contact with each other so as to realize current passage as a whole is used in various electrochemical process. Also, an electrode including (1) electrically conductive substrate, (2) covering layer covering the electrically conductive substrate and (3) electrically conductive diamond particles fixed on the covering layer, wherein each of the electrically conductive diamond particles is partially brought into contact with the electrically conductive substrate and another portion thereof is partially exposed on the surface of the covering layer. Further, an electrode material, wherein an entire side surface of columnar or tubular substrate is coated with electrically conductive diamond is used.

摘要翻译： [问题]提供一种在液体中稳定并能够加工大量液体的电极和能够高速加工大量液体的小电极; 提供液体处理器和处理使用电极的液体的方法; 提供并且难以被热应力损坏的电极材料; 并提供电极，液体处理器和处理使用电极材料的液体的方法。 [解决问题的方法]使用导电金刚石涂覆5〜60mm尺寸的实心片，将其支撑在支撑体上并使其彼此接触以实现整体的电流通过的结构电极被使用 在各种电化学过程中。 此外，包括（1）导电基板，（2）覆盖导电基板的覆盖层的电极和（3）固定在覆盖层上的导电金刚石颗粒，其中每个导电金刚石颗粒部分地与 导电性基板和其另一部分部分露出在覆盖层的表面上。 此外，使用其中柱状或管状基板的整个侧表面涂覆有导电金刚石的电极材料。

公开(公告)号：US06391775B1

公开(公告)日：2002-05-21

申请号：US09660411

申请日：2000-09-12

申请人： Naoaki Ogure ,  Hiroaki Inoue

发明人： Naoaki Ogure ,  Hiroaki Inoue

IPC分类号： H01L2144

CPC分类号： H01L21/7684 ,  H01L21/288 ,  H01L21/76888 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embedded interconnections of copper are formed by forming an insulating layer, forming embedded interconnections of copper in the insulating layer, making an exposed upper surface of the insulating layer and an exposed surface of the embedded interconnections of copper coplanar according to chemical mechanical polishing, and forming a protective silver film on the exposed surface of the embedded interconnections of copper. These steps are repeated on the existing insulating layer thereby to produce multiple layers of embedded interconnections of copper. The exposed surface of the embedded interconnections of copper is plated with silver according to immersion plating.

摘要翻译： 铜的嵌入式互连通过形成绝缘层而形成，在绝缘层中形成铜的嵌入互连，根据化学机械抛光使绝缘层的暴露的上表面和铜共面的嵌入式互连的暴露表面，以及形成 在铜的嵌入式互连的暴露表面上的保护性银膜。 在现有的绝缘层上重复这些步骤，从而产生多层铜的嵌入互连。 根据浸镀法，铜的嵌入互连的暴露表面镀银。

公开(公告)号：US5820649A

公开(公告)日：1998-10-13

申请号：US843185

申请日：1997-04-14

申请人： Naoaki Ogure ,  Kazuyoshi Terashima

发明人： Naoaki Ogure ,  Kazuyoshi Terashima

IPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/02 ,  C30B15/20 ,  H01L31/04 ,  C03B20/00

CPC分类号： C30B29/06 ,  C30B15/002 ,  C30B15/02 ,  Y10T117/1044 ,  Y10T117/1052 ,  Y10T117/1056

摘要： A liquid material such as molten silicon is stored in a crucible. A liquid material, which is identical to and held in the same conditions as the liquid material in the crucible, is continuously supplied from an auxiliary crucible to the crucible to keep constant the surface level of the liquid material in the crucible. The liquid material is continuously pulled up from the crucible at a predetermined speed while the liquid material is being solidified into a solid material such as a ribbon-like thin web of single-crystal silicon.

摘要翻译： 将诸如熔融硅的液体材料储存在坩埚中。 将与坩埚中的液体材料相同并保持在相同条件下的液体材料从辅助坩埚连续供应到坩埚中，以保持坩埚中的液体材料的表面水平恒定。 当液体材料固化成诸如单晶硅的带状薄腹板的固体材料时，液体材料以预定速度从坩埚中连续拉起。