公开(公告)号：US06914312B2

公开(公告)日：2005-07-05

申请号：US10396416

申请日：2003-03-26

申请人： Yukie Nishikawa ,  Noburu Fukushima ,  Takeshi Yamaguchi ,  Hideki Satake

发明人： Yukie Nishikawa ,  Noburu Fukushima ,  Takeshi Yamaguchi ,  Hideki Satake

IPC分类号： H01L21/318 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A MIS type field effect transistor including gate dielectrics having a rare-earth metal oxynitride layer with a high dielectric constant, which can maintain good interface characteristics, can be provided. A field effect transistor according to one aspect of this invention includes a gate dielectric having a substantially crystalline rare-earth metal oxynitride layer containing one or more metals selected from rare-earth metals, oxygen, and nitrogen. The rare-earth metal oxynitride layer contacts a predetermined region of a Si semiconductor substrate, and the nitrogen exists at the interface between the rare-earth metal oxynitride layer and the Si semiconductor substrate, and in the bulk of the rare-earth metal oxynitride. The transistor further includes a gate electrode formed on the gate dielectrics and source and drain regions, one being formed at one side of the gate electrode and the other being formed at the other side of the gate electrode in the Si semiconductor substrate.

摘要翻译： 可以提供包括能够保持良好的界面特性的具有高介电常数的稀土金属氧氮化物层的栅极电介质的MIS型场效应晶体管。 根据本发明的一个方面的场效应晶体管包括具有基本上结晶的稀土金属氧氮化物层的栅极电介质，所述稀土金属氧氮化物层含有选自稀土金属，氧和氮的一种或多种金属。 稀土金属氮氧化物层与Si半导体衬底的预定区域接触，并且氮存在于稀土金属氧氮化物层和Si半导体衬底之间的界面处，并且在大部分稀土金属氧氮化物中。 晶体管还包括形成在栅极电介质和源极和漏极区上的栅极，一个形成在栅电极的一侧，另一个形成在Si半导体衬底中的栅电极的另一侧。

公开(公告)号：US20050017304A1

公开(公告)日：2005-01-27

申请号：US10863226

申请日：2004-06-09

申请人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

发明人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01

CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

摘要翻译： 提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在所述第一绝缘膜的上方的与所述半导体基板的晶格距离不同的凸状沟道区域; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

公开(公告)号：US20060237837A1

公开(公告)日：2006-10-26

申请号：US11472329

申请日：2006-06-22

申请人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

发明人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L23/14

CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

公开(公告)号：US07538013B2

公开(公告)日：2009-05-26

申请号：US11472329

申请日：2006-06-22

申请人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

发明人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

摘要翻译： 提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在第一绝缘膜上方的沟道区，与半导体衬底的晶格距离不同; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

公开(公告)号：US07091561B2

公开(公告)日：2006-08-15

申请号：US10863226

申请日：2004-06-09

申请人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

发明人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

摘要翻译： 提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在所述第一绝缘膜的上方的与所述半导体基板的晶格距离不同的凸状沟道区域; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

公开(公告)号：US06930335B2

公开(公告)日：2005-08-16

申请号：US10397308

申请日：2003-03-27

申请人： Takeshi Yamaguchi ,  Hideki Satake ,  Noburu Fukushima

发明人： Takeshi Yamaguchi ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L29/78 ,  H01L21/268 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L29/76

CPC分类号： H01L29/517 ,  H01L21/268 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66477 ,  H01L29/6656

摘要： Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.

公开(公告)号：US20050215035A1

公开(公告)日：2005-09-29

申请号：US11136492

申请日：2005-05-25

申请人： Takeshi Yamaguchi ,  Hideki Satake ,  Noburu Fukushima

发明人： Takeshi Yamaguchi ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L29/78 ,  H01L21/268 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L21/04 ,  H01L21/84

CPC分类号： H01L29/517 ,  H01L21/268 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66477 ,  H01L29/6656

摘要： Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.

摘要翻译： 提供了一种半导体器件，其包括硅衬底，设置在硅衬底上并包含金属氧化物的栅极绝缘体，设置在栅极绝缘体上的栅极电极和设置在栅极绝缘体和栅电极的侧面上的侧壁绝缘膜 并含有铝，硅，氧和氮。

公开(公告)号：US07268411B2

公开(公告)日：2007-09-11

申请号：US11347319

申请日：2006-02-06

申请人： Tatsuo Shimizu ,  Hideki Satake

发明人： Tatsuo Shimizu ,  Hideki Satake

IPC分类号： H01L29/00

CPC分类号： H01L21/28185 ,  B82Y10/00 ,  H01L21/02148 ,  H01L21/02156 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02293 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/28291 ,  H01L21/3142 ,  H01L21/3147 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/56 ,  H01L29/122 ,  H01L29/152 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A capacitor includes a first electrode, an insulating film and a second electrode. The insulating film includes n layers of barrier layers each consisting of a material having a bandgap larger than a first bandgap and having a relative permittivity smaller than a first relative permittivity, and (n−1) layers of well layers each consisting of a material having a bandgap smaller than the first bandgap and having a relative permittivity larger than the first relative permittivity. The barrier layers and the well layers are stacked by turns. Discrete energy levels are formed in each of the well layers by a quantum effect. Thicknesses of the n layers of the barrier layers are not smaller than 2.5 angstroms. A thickness dm (angstrom) and a relative permittivity εm of an m-th barrier layer satisfying the condition: 2.5 >(d1/ε1+d2/ε2+. . . +dn/εn).

摘要翻译： 电容器包括第一电极，绝缘膜和第二电极。 绝缘膜包括n层阻挡层，每层由具有比第一带隙大的带隙并且具有小于第一相对介电常数的相对介电常数的材料构成，以及（n-1）层的各层由具有 比第一带隙小的带隙，并且具有大于第一相对介电常数的相对介电常数。 阻挡层和阱层被匝堆叠。 通过量子效应在每个阱层中形成离散能级。 阻挡层的n层的厚度不小于2.5埃。 满足以下条件的第m个阻挡层的厚度dm（埃）和相对介电常数εε（d 1 /ε1 + d 2 /ε2 + ... + d n / epsilon）。

公开(公告)号：US07208802B2

公开(公告)日：2007-04-24

申请号：US11347318

申请日：2006-02-06

申请人： Tatsuo Shimizu ,  Hideki Satake

发明人： Tatsuo Shimizu ,  Hideki Satake

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/28185 ,  B82Y10/00 ,  H01L21/02148 ,  H01L21/02156 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02293 ,  H01L21/02337 ,  H01L21/28194 ,  H01L21/28291 ,  H01L21/3142 ,  H01L21/3147 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L28/56 ,  H01L29/122 ,  H01L29/152 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： An insulating film includes a first barrier layer, a well layer provided on the first barrier layer, a second barrier layer provided on the well layer. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. The second barrier layer consists of a material having a third bandgap larger than the second bandgap and having a third relative perminivity smaller than second relative permittivity. Each of the first and second barrier layers has a thickness not smaller than 2.5 angstroms, and 2.5>(d1/ε1+d2/ε2) is satisfied where d1 and d2 (angstrom) are the thicknesses of the first and second barrier layers, respectively, ε1 is the first relative permittivity, and ε2 is the third permittivity.

摘要翻译： 绝缘膜包括第一阻挡层，设置在第一阻挡层上的阱层，设置在阱层上的第二势垒层。 第一阻挡层由具有第一带隙和第一相对介电常数的材料组成。 阱层由具有比第一带隙小的第二带隙并且具有大于第一相对介电常数的第二相对介电常数的材料组成。 第二阻挡层由具有比第二带隙大的第三带隙并且具有小于第二相对介电常数的第三相对发射率的材料组成。 第一阻挡层和第二阻挡层中的每一个具有不小于2.5埃的厚度，并且其中d 1和d 2（埃）是第一和第二阻挡层的厚度，满足2.5>（d 1 /ε1 + d 2 /ε2） 阻挡层分别为ε1为第一相对介电常数，ε2为第三介电常数。

公开(公告)号：US06191463B1

公开(公告)日：2001-02-20

申请号：US09115233

申请日：1998-07-14

申请人： Yuichiro Mitani ,  Hideki Satake ,  Akira Toriumi

发明人： Yuichiro Mitani ,  Hideki Satake ,  Akira Toriumi

IPC分类号： H01L2978

CPC分类号： H01L21/28176 ,  H01L21/2254 ,  H01L21/2257 ,  H01L21/28211 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78609 ,  H01L29/94

摘要： A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, and an electrode formed on the first insulating film. The first insulating film contains a halogen element and a combination of silicon and nitrogen or a combination of silicon, oxygen, and nitrogen. The maximum concentration of the halogen element in the first insulating film ranges from 1020 atoms/cm3 to 1021 atoms/cm3 inclusive. With this structure, the dielectric breakdown strength and the like of the insulating film increase, and the reliability of the insulating film improves.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的第一绝缘膜和形成在第一绝缘膜上的电极。 第一绝缘膜含有卤素元素和硅与氮的组合或硅，氧和氮的组合。 第一绝缘膜中的卤素元素的最大浓度为1020原子/ cm 3至1021原子/ cm 3。 利用这种结构，绝缘膜的绝缘击穿强度等增加，并且绝缘膜的可靠性提高。