公开(公告)号：US20050017304A1

公开(公告)日：2005-01-27

申请号：US10863226

申请日：2004-06-09

申请人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

发明人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01

CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

摘要翻译： 提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在所述第一绝缘膜的上方的与所述半导体基板的晶格距离不同的凸状沟道区域; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

公开(公告)号：US20060237837A1

公开(公告)日：2006-10-26

申请号：US11472329

申请日：2006-06-22

申请人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

发明人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L23/14

CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

公开(公告)号：US07538013B2

公开(公告)日：2009-05-26

申请号：US11472329

申请日：2006-06-22

申请人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

发明人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

摘要翻译： 提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在第一绝缘膜上方的沟道区，与半导体衬底的晶格距离不同; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

公开(公告)号：US07091561B2

公开(公告)日：2006-08-15

申请号：US10863226

申请日：2004-06-09

申请人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

发明人： Daisuke Matsushita ,  Yukie Nishikawa ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

摘要翻译： 提供了一种场效应晶体管，包括：第一绝缘膜，形成在半导体衬底上，并且至少包括具有与半导体衬底的界面上的晶体的晶格距离不同的结晶度的金属氧化物; 形成在所述第一绝缘膜的上方的与所述半导体基板的晶格距离不同的凸状沟道区域; 源极区域和漏极区域，分别在沟道区域的侧表面上形成在第一绝缘膜的上方; 在通道区域正上方形成的第二绝缘膜; 形成在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的侧面的栅极绝缘膜; 以及在与形成有源极区域和漏极区域的沟道区域的侧面不同的沟道区域的至少侧面上通过栅极绝缘膜形成的栅极电极。

公开(公告)号：US06914312B2

公开(公告)日：2005-07-05

申请号：US10396416

申请日：2003-03-26

申请人： Yukie Nishikawa ,  Noburu Fukushima ,  Takeshi Yamaguchi ,  Hideki Satake

发明人： Yukie Nishikawa ,  Noburu Fukushima ,  Takeshi Yamaguchi ,  Hideki Satake

IPC分类号： H01L21/318 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A MIS type field effect transistor including gate dielectrics having a rare-earth metal oxynitride layer with a high dielectric constant, which can maintain good interface characteristics, can be provided. A field effect transistor according to one aspect of this invention includes a gate dielectric having a substantially crystalline rare-earth metal oxynitride layer containing one or more metals selected from rare-earth metals, oxygen, and nitrogen. The rare-earth metal oxynitride layer contacts a predetermined region of a Si semiconductor substrate, and the nitrogen exists at the interface between the rare-earth metal oxynitride layer and the Si semiconductor substrate, and in the bulk of the rare-earth metal oxynitride. The transistor further includes a gate electrode formed on the gate dielectrics and source and drain regions, one being formed at one side of the gate electrode and the other being formed at the other side of the gate electrode in the Si semiconductor substrate.

摘要翻译： 可以提供包括能够保持良好的界面特性的具有高介电常数的稀土金属氧氮化物层的栅极电介质的MIS型场效应晶体管。 根据本发明的一个方面的场效应晶体管包括具有基本上结晶的稀土金属氧氮化物层的栅极电介质，所述稀土金属氧氮化物层含有选自稀土金属，氧和氮的一种或多种金属。 稀土金属氮氧化物层与Si半导体衬底的预定区域接触，并且氮存在于稀土金属氧氮化物层和Si半导体衬底之间的界面处，并且在大部分稀土金属氧氮化物中。 晶体管还包括形成在栅极电介质和源极和漏极区上的栅极，一个形成在栅电极的一侧，另一个形成在Si半导体衬底中的栅电极的另一侧。

公开(公告)号：US06930335B2

公开(公告)日：2005-08-16

申请号：US10397308

申请日：2003-03-27

申请人： Takeshi Yamaguchi ,  Hideki Satake ,  Noburu Fukushima

发明人： Takeshi Yamaguchi ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L29/78 ,  H01L21/268 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L29/76

CPC分类号： H01L29/517 ,  H01L21/268 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66477 ,  H01L29/6656

摘要： Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.

公开(公告)号：US20050215035A1

公开(公告)日：2005-09-29

申请号：US11136492

申请日：2005-05-25

申请人： Takeshi Yamaguchi ,  Hideki Satake ,  Noburu Fukushima

发明人： Takeshi Yamaguchi ,  Hideki Satake ,  Noburu Fukushima

IPC分类号： H01L29/78 ,  H01L21/268 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L21/04 ,  H01L21/84

CPC分类号： H01L29/517 ,  H01L21/268 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66477 ,  H01L29/6656

摘要： Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.

摘要翻译： 提供了一种半导体器件，其包括硅衬底，设置在硅衬底上并包含金属氧化物的栅极绝缘体，设置在栅极绝缘体上的栅极电极和设置在栅极绝缘体和栅电极的侧面上的侧壁绝缘膜 并含有铝，硅，氧和氮。

公开(公告)号：US5889299A

公开(公告)日：1999-03-30

申请号：US804394

申请日：1997-02-21

申请人： Kazuhide Abe ,  Shuichi Komatsu ,  Mitsuaki Izuha ,  Noburu Fukushima ,  Kenya Sano ,  Takashi Kawakubo

发明人： Kazuhide Abe ,  Shuichi Komatsu ,  Mitsuaki Izuha ,  Noburu Fukushima ,  Kenya Sano ,  Takashi Kawakubo

IPC分类号： H01L21/02 ,  H01L29/76

CPC分类号： H01L28/55

摘要： A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant "c" in the direction thicknesswise of the film and a lattice constant "a" in the direction parallel with a plane of the film.

摘要翻译： 一种薄膜电容器，包括在其表面上具有立方体系的（100）面或四方晶系的（001）面的第一电极，在第一电极上外延生长并呈现出固有地属于 立方体的钙钛矿结构，以及形成在电介质薄膜上的第二电极。 此外，电介质薄膜满足以下关系V / V0 / = 1.01，其中属于立方体系的真实钙钛矿晶体结构的单位晶格体积（晶格常数a0）由V0 = a03表示，单位晶格体积 晶格常数a = b NOTEQUAL c），其外延生长后由V = a2c表示为四方晶系，并满足以下关系c / a> / = 1.01其中c / a表示晶格常数 在膜的厚度方向上的“c”和与膜的平面平行的方向上的晶格常数“a”。

公开(公告)号：US08198647B2

公开(公告)日：2012-06-12

申请号：US12624606

申请日：2009-11-24

申请人： Tsuyoshi Hioki ,  Yutaka Nakai ,  Noburu Fukushima

发明人： Tsuyoshi Hioki ,  Yutaka Nakai ,  Noburu Fukushima

IPC分类号： H01L33/00

CPC分类号： H01L25/167 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01S5/026 ,  H01L2224/0401

摘要： A light emitting apparatus, includes: a substrate; a semiconductor device including a semiconductor layer formed integrally on a major surface of the substrate; and a light emitting device formed separately from the substrate. The light emitting device is mounted on the major surface of the substrate, electrically connected to the semiconductor device, and thermally connected to the substrate.

摘要翻译： 一种发光装置，包括：基板; 半导体器件，包括整体地形成在所述衬底的主表面上的半导体层; 以及与基板分开形成的发光器件。 发光器件安装在基板的主表面上，电连接到半导体器件，并且热连接到基板。

公开(公告)号：US4642136A

公开(公告)日：1987-02-10

申请号：US699302

申请日：1985-02-07

申请人： Noburu Fukushima ,  Hisashi Yoshino ,  Shunji Nomura

发明人： Noburu Fukushima ,  Hisashi Yoshino ,  Shunji Nomura

IPC分类号： H01B3/12 ,  H01C7/02 ,  C22C29/12

CPC分类号： H01C7/022

摘要： A PTC ceramic composition comprising a fundamental component represented by the formula:(V.sub.1-x A.sub.x).sub.2 O.sub.3wherein x is a value within the range of 0.ltoreq.x.ltoreq.0.02 and A is at least one of Cr and Al, and tin in an amount of 1 to 25 % by weight based on the total weight of the composition, has a small electric resistance in the low resistance state, good PTC properties, and a high density.

摘要翻译： 一种PTC陶瓷组合物，其包含由式（V1-xAx）2O3表示的基本组分，其中x是0≤x≤0.02的范围内的值，A是Cr和Al中的至少一种，以及锡 相对于组合物的总重量为1〜25重量％，在低电阻状态下具有小的电阻，良好的PTC性能和高密度。